JP2010020648A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010020648A5 JP2010020648A5 JP2008182099A JP2008182099A JP2010020648A5 JP 2010020648 A5 JP2010020648 A5 JP 2010020648A5 JP 2008182099 A JP2008182099 A JP 2008182099A JP 2008182099 A JP2008182099 A JP 2008182099A JP 2010020648 A5 JP2010020648 A5 JP 2010020648A5
- Authority
- JP
- Japan
- Prior art keywords
- storage
- semiconductor nonvolatile
- data
- horizontal
- host
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 22
- 230000015654 memory Effects 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008182099A JP2010020648A (ja) | 2008-07-12 | 2008-07-12 | 記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008182099A JP2010020648A (ja) | 2008-07-12 | 2008-07-12 | 記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010020648A JP2010020648A (ja) | 2010-01-28 |
| JP2010020648A5 true JP2010020648A5 (enExample) | 2011-06-02 |
Family
ID=41705453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008182099A Pending JP2010020648A (ja) | 2008-07-12 | 2008-07-12 | 記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010020648A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009047624A1 (de) * | 2009-12-08 | 2011-06-09 | Robert Bosch Gmbh | Magnetfeldsensor |
| JP5361826B2 (ja) * | 2010-08-09 | 2013-12-04 | 株式会社東芝 | 記録ユニット及び故障チップ特定方法 |
| US8417877B2 (en) * | 2010-08-31 | 2013-04-09 | Micron Technology, Inc | Stripe-based non-volatile multilevel memory operation |
| JP2012128660A (ja) * | 2010-12-15 | 2012-07-05 | Toshiba Corp | 半導体記憶装置 |
| US9059736B2 (en) * | 2012-12-03 | 2015-06-16 | Western Digital Technologies, Inc. | Methods, solid state drive controllers and data storage devices having a runtime variable raid protection scheme |
| US10379952B2 (en) * | 2017-06-16 | 2019-08-13 | Western Digital Technologies, Inc. | Data recovery and regeneration using parity code |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04307647A (ja) * | 1991-04-04 | 1992-10-29 | Fuji Photo Film Co Ltd | メモリカードの記憶管理方式 |
| JPH04321123A (ja) * | 1991-04-22 | 1992-11-11 | Toshiba Corp | ディスクアレイ制御装置 |
| JPH10240453A (ja) * | 1997-02-28 | 1998-09-11 | Nec Corp | ディスクアレイ装置 |
| KR100267366B1 (en) * | 1997-07-15 | 2000-10-16 | Samsung Electronics Co Ltd | Method for recoding parity and restoring data of failed disks in an external storage subsystem and apparatus therefor |
| JP2000207137A (ja) * | 1999-01-12 | 2000-07-28 | Kowa Co | 情報記憶装置 |
| JP4901334B2 (ja) * | 2006-06-30 | 2012-03-21 | 株式会社東芝 | メモリコントローラ |
| JP4372134B2 (ja) * | 2006-09-29 | 2009-11-25 | 株式会社日立製作所 | データ比較機能を有するストレージシステム |
| JP4932427B2 (ja) * | 2006-10-20 | 2012-05-16 | 株式会社日立製作所 | 記憶装置及び記憶方法 |
-
2008
- 2008-07-12 JP JP2008182099A patent/JP2010020648A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI595488B (zh) | 具有雙模式插腳輸出之快閃記憶體控制器 | |
| US11543987B2 (en) | Storage system and method for retention-based zone determination | |
| JP2017079050A (ja) | 保護されたデータとは別個のパリティデータの記憶 | |
| US20170047114A1 (en) | Correlating physical page addresses for soft decision decoding | |
| JP2009026271A5 (enExample) | ||
| US20110202818A1 (en) | Non-volatile memory device and operation method using the same | |
| US9070443B2 (en) | Embedded solid state disk as a controller of a solid state disk | |
| US9582435B2 (en) | Memory system and method for efficient padding of memory pages | |
| JP2010020648A5 (enExample) | ||
| JP2015536496A (ja) | 多モードピン配列を有するフラッシュメモリコントローラ | |
| CN104571938A (zh) | 在多层单元存储器存取数据的方法及其多层单元存储装置 | |
| CN109800187A (zh) | 被配置为更新现场可编程门阵列的存储设备及其操作方法 | |
| US11442666B2 (en) | Storage system and dual-write programming method with reverse order for secondary block | |
| US11537320B2 (en) | Storage system and method for host memory access | |
| CN109559775A (zh) | 非易失性存储器装置及其操作方法以及数据存储设备 | |
| US20160254031A1 (en) | Semiconductor memory device | |
| CN115080466A (zh) | 简化的高容量管芯和块管理 | |
| JP2014211875A (ja) | データアクセスシステム、データアクセス装置及びデータアクセスコントローラ | |
| US11836374B1 (en) | Storage system and method for data placement in zoned storage | |
| US11169584B2 (en) | Dual-connector storage system and method for simultaneously providing power and memory access to a computing device | |
| US11106575B2 (en) | Systems and methods for data storage in a memory system | |
| US11960758B2 (en) | Storage system and folding method for enhanced performance | |
| WO2020149948A1 (en) | System and method for storage system property deviation | |
| US20220197557A1 (en) | Storage System and Method for Dual Fast Release and Slow Release Responses | |
| CN114496039A (zh) | 存储器设备及其操作方法 |