JP2010020648A - 記憶装置 - Google Patents

記憶装置 Download PDF

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Publication number
JP2010020648A
JP2010020648A JP2008182099A JP2008182099A JP2010020648A JP 2010020648 A JP2010020648 A JP 2010020648A JP 2008182099 A JP2008182099 A JP 2008182099A JP 2008182099 A JP2008182099 A JP 2008182099A JP 2010020648 A JP2010020648 A JP 2010020648A
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JP
Japan
Prior art keywords
data
memory
bit
bits
parity
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Pending
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JP2008182099A
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English (en)
Japanese (ja)
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JP2010020648A5 (enExample
Inventor
Mitsuhiro Matsumoto
光洋 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi ULSI Systems Co Ltd
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Application filed by Hitachi ULSI Systems Co Ltd filed Critical Hitachi ULSI Systems Co Ltd
Priority to JP2008182099A priority Critical patent/JP2010020648A/ja
Publication of JP2010020648A publication Critical patent/JP2010020648A/ja
Publication of JP2010020648A5 publication Critical patent/JP2010020648A5/ja
Pending legal-status Critical Current

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JP2008182099A 2008-07-12 2008-07-12 記憶装置 Pending JP2010020648A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008182099A JP2010020648A (ja) 2008-07-12 2008-07-12 記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008182099A JP2010020648A (ja) 2008-07-12 2008-07-12 記憶装置

Publications (2)

Publication Number Publication Date
JP2010020648A true JP2010020648A (ja) 2010-01-28
JP2010020648A5 JP2010020648A5 (enExample) 2011-06-02

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ID=41705453

Family Applications (1)

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JP2008182099A Pending JP2010020648A (ja) 2008-07-12 2008-07-12 記憶装置

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JP (1) JP2010020648A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012038168A (ja) * 2010-08-09 2012-02-23 Toshiba Corp 記録ユニット及び故障チップ特定方法
WO2012081733A1 (en) * 2010-12-15 2012-06-21 Kabushiki Kaisha Toshiba Semiconductor storage device
US20120313638A1 (en) * 2009-12-08 2012-12-13 Christian Patak Magnetic field sensor
JP2013536959A (ja) * 2010-08-31 2013-09-26 マイクロン テクノロジー， インク． ストライプに基づく不揮発性多値メモリ操作
JP2015535640A (ja) * 2012-12-03 2015-12-14 ウェスタン デジタル テクノロジーズ インコーポレーテッド ランタイム可変ｒａｉｄ保護スキームを有する方法、ソリッドステートドライブコントローラー、及びデータ格納装置
CN109144767A (zh) * 2017-06-16 2019-01-04 西部数据技术公司 使用奇偶校验代码的数据恢复和再生

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04307647A (ja) * 1991-04-04 1992-10-29 Fuji Photo Film Co Ltd メモリカードの記憶管理方式
JPH04321123A (ja) * 1991-04-22 1992-11-11 Toshiba Corp ディスクアレイ制御装置
JPH10240453A (ja) * 1997-02-28 1998-09-11 Nec Corp ディスクアレイ装置
JPH1139104A (ja) * 1997-07-15 1999-02-12 Samsung Electron Co Ltd 外部記憶サブシステムのパリティ記憶及びデータ修復方法
JP2000207137A (ja) * 1999-01-12 2000-07-28 Kowa Co 情報記憶装置
JP2008009943A (ja) * 2006-06-30 2008-01-17 Toshiba Corp メモリコントローラ
JP2008084270A (ja) * 2006-09-29 2008-04-10 Hitachi Ltd データ比較機能を有するストレージシステム
JP2008102819A (ja) * 2006-10-20 2008-05-01 Hitachi Ltd 記憶装置及び記憶方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04307647A (ja) * 1991-04-04 1992-10-29 Fuji Photo Film Co Ltd メモリカードの記憶管理方式
JPH04321123A (ja) * 1991-04-22 1992-11-11 Toshiba Corp ディスクアレイ制御装置
JPH10240453A (ja) * 1997-02-28 1998-09-11 Nec Corp ディスクアレイ装置
JPH1139104A (ja) * 1997-07-15 1999-02-12 Samsung Electron Co Ltd 外部記憶サブシステムのパリティ記憶及びデータ修復方法
JP2000207137A (ja) * 1999-01-12 2000-07-28 Kowa Co 情報記憶装置
JP2008009943A (ja) * 2006-06-30 2008-01-17 Toshiba Corp メモリコントローラ
JP2008084270A (ja) * 2006-09-29 2008-04-10 Hitachi Ltd データ比較機能を有するストレージシステム
JP2008102819A (ja) * 2006-10-20 2008-05-01 Hitachi Ltd 記憶装置及び記憶方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120313638A1 (en) * 2009-12-08 2012-12-13 Christian Patak Magnetic field sensor
JP2012038168A (ja) * 2010-08-09 2012-02-23 Toshiba Corp 記録ユニット及び故障チップ特定方法
JP2013536959A (ja) * 2010-08-31 2013-09-26 マイクロン テクノロジー， インク． ストライプに基づく不揮発性多値メモリ操作
US9235503B2 (en) 2010-08-31 2016-01-12 Micron Technology, Inc. Stripe-based non-volatile multilevel memory operation
WO2012081733A1 (en) * 2010-12-15 2012-06-21 Kabushiki Kaisha Toshiba Semiconductor storage device
JP2015535640A (ja) * 2012-12-03 2015-12-14 ウェスタン デジタル テクノロジーズ インコーポレーテッド ランタイム可変ｒａｉｄ保護スキームを有する方法、ソリッドステートドライブコントローラー、及びデータ格納装置
CN109144767A (zh) * 2017-06-16 2019-01-04 西部数据技术公司 使用奇偶校验代码的数据恢复和再生
CN109144767B (zh) * 2017-06-16 2021-12-24 西部数据技术公司 数据存储系统及其操作方法

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