JP2008165744A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2008165744A
JP2008165744A JP2007302541A JP2007302541A JP2008165744A JP 2008165744 A JP2008165744 A JP 2008165744A JP 2007302541 A JP2007302541 A JP 2007302541A JP 2007302541 A JP2007302541 A JP 2007302541A JP 2008165744 A JP2008165744 A JP 2008165744A
Authority
JP
Japan
Prior art keywords
film
sram
circuit
power storage
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007302541A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008165744A5 (enExample
Inventor
Munehiro Kamitsuma
宗広 上妻
Yoshimoto Kurokawa
義元 黒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007302541A priority Critical patent/JP2008165744A/ja
Publication of JP2008165744A publication Critical patent/JP2008165744A/ja
Publication of JP2008165744A5 publication Critical patent/JP2008165744A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/46—Accumulators structurally combined with charging apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44—Methods for charging or discharging
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Secondary Cells (AREA)
JP2007302541A 2006-12-07 2007-11-22 半導体装置 Withdrawn JP2008165744A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007302541A JP2008165744A (ja) 2006-12-07 2007-11-22 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006330177 2006-12-07
JP2007302541A JP2008165744A (ja) 2006-12-07 2007-11-22 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013077332A Division JP2013131252A (ja) 2006-12-07 2013-04-03 半導体装置

Publications (2)

Publication Number Publication Date
JP2008165744A true JP2008165744A (ja) 2008-07-17
JP2008165744A5 JP2008165744A5 (enExample) 2011-01-06

Family

ID=39497309

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007302541A Withdrawn JP2008165744A (ja) 2006-12-07 2007-11-22 半導体装置
JP2013077332A Withdrawn JP2013131252A (ja) 2006-12-07 2013-04-03 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013077332A Withdrawn JP2013131252A (ja) 2006-12-07 2013-04-03 半導体装置

Country Status (3)

Country Link
US (1) US8487745B2 (enExample)
JP (2) JP2008165744A (enExample)
CN (2) CN101197009B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014199507A1 (ja) * 2013-06-14 2014-12-18 ルネサスエレクトロニクス株式会社 通信制御装置及び実装基板
KR20180005262A (ko) * 2008-08-11 2018-01-15 사푸라스트 리써치 엘엘씨 전자기 에너지를 수확하기 위한 일체형 컬렉터 표면을 갖는 에너지 디바이스 및 전자기 에너지를 수확하는 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100355B2 (ja) * 2006-12-22 2012-12-19 株式会社半導体エネルギー研究所 温度制御装置
US8143844B2 (en) * 2007-01-19 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Charging device
JP2009087928A (ja) * 2007-09-13 2009-04-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8525019B2 (en) * 2010-07-01 2013-09-03 Primestar Solar, Inc. Thin film article and method for forming a reduced conductive area in transparent conductive films for photovoltaic modules
CN103870261B (zh) * 2012-12-14 2017-03-29 上海华虹宏力半导体制造有限公司 Sram天线信息文件的生成方法
KR102565276B1 (ko) 2016-11-16 2023-08-09 삼성전자주식회사 코일 공유 구조를 가지는 무선 장치
JP7552682B2 (ja) 2020-02-13 2024-09-18 株式会社村田製作所 Ｉｃカード及びｉｃカードシステム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6274189A (ja) * 1985-09-27 1987-04-04 Toshiba Corp 情報媒体
JPH02104421U (enExample) * 1989-01-27 1990-08-20
JP2001005928A (ja) * 1999-06-17 2001-01-12 Hitachi Maxell Ltd Ｉｃカード

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732144A (en) 1980-08-06 1982-02-20 Nippon Gakki Seizo Kk Energy and/or data transmitter and receiver
NL8601021A (nl) * 1986-04-22 1987-11-16 Nedap Nv Programmeerbare responder.
JP3032207B2 (ja) * 1987-04-24 2000-04-10 株式会社日立製作所 マイクロ・コンピュータ
JP2623332B2 (ja) * 1988-02-03 1997-06-25 日立マクセル株式会社 Ｉｃカード及びその動作プログラム書込み方法
JP2811679B2 (ja) 1988-08-24 1998-10-15 ソニー株式会社 メモリカードの使用方法
JPH02104421A (ja) 1988-10-12 1990-04-17 Kawasaki Steel Corp 準安定オーステナイト系ステンレス鋼の温間スピニング加工方法
JPH03240127A (ja) * 1990-02-17 1991-10-25 Hitachi Maxell Ltd プログラム制御システム
JPH0495187A (ja) * 1990-08-07 1992-03-27 Canon Inc Ｉｃカード
JPH0496891A (ja) 1990-08-13 1992-03-30 Matsushita Electric Ind Co Ltd メモリーカード
JPH0696301A (ja) 1992-09-10 1994-04-08 Sokkia Co Ltd Ｉｃカード
JPH0757067A (ja) 1993-08-18 1995-03-03 Toshiba Corp 無線式情報媒体および無線式情報媒体システム
JPH10307898A (ja) 1997-05-09 1998-11-17 Toppan Printing Co Ltd 充電式非接触ｉｃカードシステム
EP0971311A4 (en) 1997-08-08 2005-03-02 Sega Enterprises Kk STORAGE MEDIUM, CONTROLLER AND ELECTRONIC DEVICE
ATE498166T1 (de) 2001-02-12 2011-02-15 Symbol Technologies Inc Architektur zur radiofrequenzidentifizierung
JP2003070187A (ja) 2001-08-27 2003-03-07 Toshiba Eng Co Ltd 非接触データキャリア装置並びに内蔵二次電池の充電方法
JP4778660B2 (ja) 2001-11-27 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7564340B2 (en) 2002-10-09 2009-07-21 Inside Contactless RFID-UHF integrated circuit
JP2004303174A (ja) 2003-04-01 2004-10-28 Seiko Epson Corp 非接触タグ用の電子回路及び非接触タグ
US6914447B2 (en) 2003-04-23 2005-07-05 Texas Instruments Incorporated High activity, spatially distributed radiation source for accurately simulating semiconductor device radiation environments
US7248165B2 (en) 2003-09-09 2007-07-24 Motorola, Inc. Method and apparatus for multiple frequency RFID tag architecture
CN1529182A (zh) * 2003-10-01 2004-09-15 复旦大学 有源射频识别标签卡电池的电量识别与充电方法
US7130234B2 (en) 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7332815B2 (en) * 2003-12-12 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4689260B2 (ja) 2003-12-19 2011-05-25 株式会社半導体エネルギー研究所 半導体装置、ラベル又はタグ
US7405665B2 (en) 2003-12-19 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RFID tag and label-like object
JP2005191961A (ja) 2003-12-25 2005-07-14 Sharp Corp 非接触型ｉｃカード、電子情報機器、携帯型電子情報機器、開放型システム、消費電力制御方法、制御プログラムおよび可読記録媒体
US7348875B2 (en) * 2004-05-04 2008-03-25 Battelle Memorial Institute Semi-passive radio frequency identification (RFID) tag with active beacon
JP4611093B2 (ja) 2004-05-12 2011-01-12 セイコーインスツル株式会社 電波発電回路
JP2006004015A (ja) 2004-06-15 2006-01-05 Ts Photon:Kk バッテリーレス型プログラム制御可能な論理回路付きｒｆｉｄ応答器
WO2006059269A2 (en) 2004-12-01 2006-06-08 Koninklijke Philips Electronics N.V. Electronic device having logic circuitry and method for designing logic circuitry
KR100732277B1 (ko) 2005-05-30 2007-06-25 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 포함하는 ｒｆｉｄ에서의 변/복조 장치
US7881693B2 (en) 2006-10-17 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2131642A1 (en) 2007-03-29 2009-12-09 Kabushiki Kaisha Asahi Rubber Electromagnetic shield sheet and rfid plate
US8836512B2 (en) 2008-07-28 2014-09-16 Symbol Technologies, Inc. Self tuning RFID

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6274189A (ja) * 1985-09-27 1987-04-04 Toshiba Corp 情報媒体
JPH02104421U (enExample) * 1989-01-27 1990-08-20
JP2001005928A (ja) * 1999-06-17 2001-01-12 Hitachi Maxell Ltd Ｉｃカード

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180005262A (ko) * 2008-08-11 2018-01-15 사푸라스트 리써치 엘엘씨 전자기 에너지를 수확하기 위한 일체형 컬렉터 표면을 갖는 에너지 디바이스 및 전자기 에너지를 수확하는 방법
KR102155933B1 (ko) 2008-08-11 2020-09-14 사푸라스트 리써치 엘엘씨 전자기 에너지를 수확하기 위한 일체형 컬렉터 표면을 갖는 에너지 디바이스 및 전자기 에너지를 수확하는 방법
WO2014199507A1 (ja) * 2013-06-14 2014-12-18 ルネサスエレクトロニクス株式会社 通信制御装置及び実装基板
JP6067110B2 (ja) * 2013-06-14 2017-01-25 ルネサスエレクトロニクス株式会社 通信制御装置及び実装基板
US9705363B2 (en) 2013-06-14 2017-07-11 Renesas Electronics Corporation Communication control device and mounting board

Also Published As

Publication number Publication date
US20080136604A1 (en) 2008-06-12
CN101197009A (zh) 2008-06-11
JP2013131252A (ja) 2013-07-04
CN102842050A (zh) 2012-12-26
CN101197009B (zh) 2012-06-13
US8487745B2 (en) 2013-07-16
CN102842050B (zh) 2015-12-16

Similar Documents

Publication Publication Date Title
JP5041984B2 (ja) 整流回路、電源回路及び半導体装置
US10380472B2 (en) Semiconductor device
JP2013131252A (ja) 半導体装置
JP5731040B2 (ja) 半導体装置
JP4994216B2 (ja) 半導体装置
JP5604071B2 (ja) 半導体装置
US8570151B2 (en) Semiconductor device
JP5222545B2 (ja) 送受信回路及び当該送受信回路を具備する半導体装置
JP5138327B2 (ja) 整流回路及び該整流回路を用いた半導体装置
US8198936B2 (en) Semiconductor device
JP2008165286A (ja) 定電圧回路及び当該定電圧回路を具備する半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101111

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101111

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120711

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120830

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130108

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20130403