CN101197009B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN101197009B
CN101197009B CN2007101989285A CN200710198928A CN101197009B CN 101197009 B CN101197009 B CN 101197009B CN 2007101989285 A CN2007101989285 A CN 2007101989285A CN 200710198928 A CN200710198928 A CN 200710198928A CN 101197009 B CN101197009 B CN 101197009B
Authority
CN
China
Prior art keywords
film
circuit
sram
antenna circuit
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101989285A
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English (en)
Chinese (zh)
Other versions
CN101197009A (zh
Inventor
上妻宗广
黑川义元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN201210096091.4A priority Critical patent/CN102842050B/zh
Publication of CN101197009A publication Critical patent/CN101197009A/zh
Application granted granted Critical
Publication of CN101197009B publication Critical patent/CN101197009B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/46—Accumulators structurally combined with charging apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44—Methods for charging or discharging
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Secondary Cells (AREA)
CN2007101989285A 2006-12-07 2007-12-07 半导体装置 Expired - Fee Related CN101197009B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210096091.4A CN102842050B (zh) 2006-12-07 2007-12-07 Rfid系统和半导体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006-330177 2006-12-07
JP2006330177 2006-12-07
JP2006330177 2006-12-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210096091.4A Division CN102842050B (zh) 2006-12-07 2007-12-07 Rfid系统和半导体装置

Publications (2)

Publication Number Publication Date
CN101197009A CN101197009A (zh) 2008-06-11
CN101197009B true CN101197009B (zh) 2012-06-13

Family

ID=39497309

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2007101989285A Expired - Fee Related CN101197009B (zh) 2006-12-07 2007-12-07 半导体装置
CN201210096091.4A Expired - Fee Related CN102842050B (zh) 2006-12-07 2007-12-07 Rfid系统和半导体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201210096091.4A Expired - Fee Related CN102842050B (zh) 2006-12-07 2007-12-07 Rfid系统和半导体装置

Country Status (3)

Country Link
US (1) US8487745B2 (enExample)
JP (2) JP2008165744A (enExample)
CN (2) CN101197009B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100355B2 (ja) * 2006-12-22 2012-12-19 株式会社半導体エネルギー研究所 温度制御装置
US8143844B2 (en) * 2007-01-19 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Charging device
JP2009087928A (ja) * 2007-09-13 2009-04-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8906523B2 (en) * 2008-08-11 2014-12-09 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US8525019B2 (en) * 2010-07-01 2013-09-03 Primestar Solar, Inc. Thin film article and method for forming a reduced conductive area in transparent conductive films for photovoltaic modules
CN103870261B (zh) * 2012-12-14 2017-03-29 上海华虹宏力半导体制造有限公司 Sram天线信息文件的生成方法
CN105284056B (zh) * 2013-06-14 2017-09-05 瑞萨电子株式会社 通信控制装置和安装基板
KR102565276B1 (ko) 2016-11-16 2023-08-09 삼성전자주식회사 코일 공유 구조를 가지는 무선 장치
JP7552682B2 (ja) 2020-02-13 2024-09-18 株式会社村田製作所 Ｉｃカード及びｉｃカードシステム

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JPS5732144A (en) 1980-08-06 1982-02-20 Nippon Gakki Seizo Kk Energy and/or data transmitter and receiver
JPS6274189A (ja) 1985-09-27 1987-04-04 Toshiba Corp 情報媒体
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JP3032207B2 (ja) * 1987-04-24 2000-04-10 株式会社日立製作所 マイクロ・コンピュータ
JP2623332B2 (ja) * 1988-02-03 1997-06-25 日立マクセル株式会社 Ｉｃカード及びその動作プログラム書込み方法
JP2811679B2 (ja) 1988-08-24 1998-10-15 ソニー株式会社 メモリカードの使用方法
JPH02104421A (ja) 1988-10-12 1990-04-17 Kawasaki Steel Corp 準安定オーステナイト系ステンレス鋼の温間スピニング加工方法
JPH02104421U (enExample) * 1989-01-27 1990-08-20
JPH03240127A (ja) * 1990-02-17 1991-10-25 Hitachi Maxell Ltd プログラム制御システム
JPH0495187A (ja) * 1990-08-07 1992-03-27 Canon Inc Ｉｃカード
JPH0496891A (ja) 1990-08-13 1992-03-30 Matsushita Electric Ind Co Ltd メモリーカード
JPH0696301A (ja) 1992-09-10 1994-04-08 Sokkia Co Ltd Ｉｃカード
JPH0757067A (ja) 1993-08-18 1995-03-03 Toshiba Corp 無線式情報媒体および無線式情報媒体システム
JPH10307898A (ja) 1997-05-09 1998-11-17 Toppan Printing Co Ltd 充電式非接触ｉｃカードシステム
EP0971311A4 (en) 1997-08-08 2005-03-02 Sega Enterprises Kk STORAGE MEDIUM, CONTROLLER AND ELECTRONIC DEVICE
JP2001005928A (ja) * 1999-06-17 2001-01-12 Hitachi Maxell Ltd Ｉｃカード
ATE498166T1 (de) 2001-02-12 2011-02-15 Symbol Technologies Inc Architektur zur radiofrequenzidentifizierung
JP2003070187A (ja) 2001-08-27 2003-03-07 Toshiba Eng Co Ltd 非接触データキャリア装置並びに内蔵二次電池の充電方法
JP4778660B2 (ja) 2001-11-27 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7564340B2 (en) 2002-10-09 2009-07-21 Inside Contactless RFID-UHF integrated circuit
JP2004303174A (ja) 2003-04-01 2004-10-28 Seiko Epson Corp 非接触タグ用の電子回路及び非接触タグ
US6914447B2 (en) 2003-04-23 2005-07-05 Texas Instruments Incorporated High activity, spatially distributed radiation source for accurately simulating semiconductor device radiation environments
US7248165B2 (en) 2003-09-09 2007-07-24 Motorola, Inc. Method and apparatus for multiple frequency RFID tag architecture
CN1529182A (zh) * 2003-10-01 2004-09-15 复旦大学 有源射频识别标签卡电池的电量识别与充电方法
US7130234B2 (en) 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7332815B2 (en) * 2003-12-12 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4689260B2 (ja) 2003-12-19 2011-05-25 株式会社半導体エネルギー研究所 半導体装置、ラベル又はタグ
US7405665B2 (en) 2003-12-19 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RFID tag and label-like object
JP2005191961A (ja) 2003-12-25 2005-07-14 Sharp Corp 非接触型ｉｃカード、電子情報機器、携帯型電子情報機器、開放型システム、消費電力制御方法、制御プログラムおよび可読記録媒体
US7348875B2 (en) * 2004-05-04 2008-03-25 Battelle Memorial Institute Semi-passive radio frequency identification (RFID) tag with active beacon
JP4611093B2 (ja) 2004-05-12 2011-01-12 セイコーインスツル株式会社 電波発電回路
JP2006004015A (ja) 2004-06-15 2006-01-05 Ts Photon:Kk バッテリーレス型プログラム制御可能な論理回路付きｒｆｉｄ応答器
WO2006059269A2 (en) 2004-12-01 2006-06-08 Koninklijke Philips Electronics N.V. Electronic device having logic circuitry and method for designing logic circuitry
KR100732277B1 (ko) 2005-05-30 2007-06-25 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 포함하는 ｒｆｉｄ에서의 변/복조 장치
US7881693B2 (en) 2006-10-17 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2131642A1 (en) 2007-03-29 2009-12-09 Kabushiki Kaisha Asahi Rubber Electromagnetic shield sheet and rfid plate
US8836512B2 (en) 2008-07-28 2014-09-16 Symbol Technologies, Inc. Self tuning RFID

Also Published As

Publication number Publication date
US20080136604A1 (en) 2008-06-12
CN101197009A (zh) 2008-06-11
JP2008165744A (ja) 2008-07-17
JP2013131252A (ja) 2013-07-04
CN102842050A (zh) 2012-12-26
US8487745B2 (en) 2013-07-16
CN102842050B (zh) 2015-12-16

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120613

Termination date: 20211207