JP2008153239A5 - - Google Patents
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- JP2008153239A5 JP2008153239A5 JP2008058689A JP2008058689A JP2008153239A5 JP 2008153239 A5 JP2008153239 A5 JP 2008153239A5 JP 2008058689 A JP2008058689 A JP 2008058689A JP 2008058689 A JP2008058689 A JP 2008058689A JP 2008153239 A5 JP2008153239 A5 JP 2008153239A5
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- 239000000523 sample Substances 0.000 claims description 677
- 239000000758 substrate Substances 0.000 claims description 106
- 238000000151 deposition Methods 0.000 claims description 82
- 230000008021 deposition Effects 0.000 claims description 82
- 238000002360 preparation method Methods 0.000 claims description 76
- 238000010884 ion-beam technique Methods 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 51
- 238000012546 transfer Methods 0.000 claims description 48
- 238000012545 processing Methods 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 80
- 238000007689 inspection Methods 0.000 description 48
- 238000004458 analytical method Methods 0.000 description 26
- 230000002950 deficient Effects 0.000 description 24
- 238000004364 calculation method Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 238000012284 sample analysis method Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000008188 pellet Substances 0.000 description 5
- 238000005464 sample preparation method Methods 0.000 description 5
- 239000011163 secondary particle Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000538 analytical sample Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000001198 high resolution scanning electron microscopy Methods 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008058689A JP4185962B2 (ja) | 2008-03-07 | 2008-03-07 | 試料作製装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008058689A JP4185962B2 (ja) | 2008-03-07 | 2008-03-07 | 試料作製装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006159234A Division JP4353962B2 (ja) | 2006-06-08 | 2006-06-08 | 試料解析方法及び試料作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008153239A JP2008153239A (ja) | 2008-07-03 |
| JP2008153239A5 true JP2008153239A5 (enrdf_load_stackoverflow) | 2008-08-14 |
| JP4185962B2 JP4185962B2 (ja) | 2008-11-26 |
Family
ID=39655151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008058689A Expired - Lifetime JP4185962B2 (ja) | 2008-03-07 | 2008-03-07 | 試料作製装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4185962B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6708547B2 (ja) | 2014-06-30 | 2020-06-10 | 株式会社日立ハイテクサイエンス | 自動試料作製装置 |
| US9620333B2 (en) | 2014-08-29 | 2017-04-11 | Hitachi High-Tech Science Corporation | Charged particle beam apparatus |
| KR102489385B1 (ko) | 2015-02-19 | 2023-01-17 | 가부시키가이샤 히다치 하이테크 사이언스 | 하전 입자 빔 장치 |
| JP6700897B2 (ja) | 2016-03-25 | 2020-05-27 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
| JP6931214B2 (ja) | 2017-01-19 | 2021-09-01 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
| JP6885576B2 (ja) | 2017-01-19 | 2021-06-16 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
| JP6900027B2 (ja) | 2017-03-28 | 2021-07-07 | 株式会社日立ハイテクサイエンス | 試料トレンチ埋込方法 |
| JP6541161B2 (ja) | 2017-11-17 | 2019-07-10 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
| JP6885637B2 (ja) * | 2020-04-30 | 2021-06-16 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2807715B2 (ja) * | 1988-01-22 | 1998-10-08 | セイコーインスツルメンツ株式会社 | イオンビーム加工装置 |
| JPH0215648A (ja) * | 1988-07-04 | 1990-01-19 | Hitachi Ltd | 微細素子の断面観察装置 |
| JP2708547B2 (ja) * | 1989-05-10 | 1998-02-04 | 株式会社日立製作所 | デバイス移植方法 |
| JP2926426B2 (ja) * | 1990-03-30 | 1999-07-28 | セイコーインスツルメンツ株式会社 | 集束イオンビーム加工方法 |
| JP2774884B2 (ja) * | 1991-08-22 | 1998-07-09 | 株式会社日立製作所 | 試料の分離方法及びこの分離方法で得た分離試料の分析方法 |
| JPH06232238A (ja) * | 1993-02-05 | 1994-08-19 | Hitachi Ltd | 試料処理装置および試料処理方法 |
| JP3221797B2 (ja) * | 1994-06-14 | 2001-10-22 | 株式会社日立製作所 | 試料作成方法及びその装置 |
| JP3751062B2 (ja) * | 1996-01-22 | 2006-03-01 | 株式会社リコー | 断面ｔｅｍ観察用試料ホルダー及びそれを備えたｔｅｍ装置 |
| US6194720B1 (en) * | 1998-06-24 | 2001-02-27 | Micron Technology, Inc. | Preparation of transmission electron microscope samples |
| US6188072B1 (en) * | 1999-06-08 | 2001-02-13 | Mosel Vitelic Inc. | Apparatus for extracting TEM specimens of semiconductor devices |
-
2008
- 2008-03-07 JP JP2008058689A patent/JP4185962B2/ja not_active Expired - Lifetime
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