JP2008146068A5 - - Google Patents

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Publication number
JP2008146068A5
JP2008146068A5 JP2007315900A JP2007315900A JP2008146068A5 JP 2008146068 A5 JP2008146068 A5 JP 2008146068A5 JP 2007315900 A JP2007315900 A JP 2007315900A JP 2007315900 A JP2007315900 A JP 2007315900A JP 2008146068 A5 JP2008146068 A5 JP 2008146068A5
Authority
JP
Japan
Prior art keywords
film
amorphous semiconductor
wiring
insulating film
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007315900A
Other languages
English (en)
Japanese (ja)
Other versions
JP4850168B2 (ja
JP2008146068A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007315900A priority Critical patent/JP4850168B2/ja
Priority claimed from JP2007315900A external-priority patent/JP4850168B2/ja
Publication of JP2008146068A publication Critical patent/JP2008146068A/ja
Publication of JP2008146068A5 publication Critical patent/JP2008146068A5/ja
Application granted granted Critical
Publication of JP4850168B2 publication Critical patent/JP4850168B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007315900A 2007-12-06 2007-12-06 半導体装置 Expired - Fee Related JP4850168B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007315900A JP4850168B2 (ja) 2007-12-06 2007-12-06 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007315900A JP4850168B2 (ja) 2007-12-06 2007-12-06 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000400280A Division JP4789322B2 (ja) 2000-12-11 2000-12-28 半導体装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011182531A Division JP5538331B2 (ja) 2011-08-24 2011-08-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2008146068A JP2008146068A (ja) 2008-06-26
JP2008146068A5 true JP2008146068A5 (enExample) 2008-08-14
JP4850168B2 JP4850168B2 (ja) 2012-01-11

Family

ID=39606241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007315900A Expired - Fee Related JP4850168B2 (ja) 2007-12-06 2007-12-06 半導体装置

Country Status (1)

Country Link
JP (1) JP4850168B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP2010263182A (ja) * 2009-04-10 2010-11-18 Toppan Printing Co Ltd 薄膜トランジスタおよび画像表示装置
JP5538331B2 (ja) * 2011-08-24 2014-07-02 株式会社半導体エネルギー研究所 半導体装置
JP5604477B2 (ja) * 2012-07-10 2014-10-08 株式会社半導体エネルギー研究所 表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243333A (ja) * 1992-02-26 1993-09-21 Nec Corp 薄膜電界効果型トランジスタ基板
JP3387981B2 (ja) * 1992-10-09 2003-03-17 富士通株式会社 薄膜トランジスタマトリクス装置の製造方法
JPH07110495A (ja) * 1993-10-14 1995-04-25 Hitachi Ltd アクティブマトリクス型液晶表示装置
JPH10319431A (ja) * 1997-05-15 1998-12-04 Advanced Display:Kk 薄膜トランジスタアレイ基板
JP3868649B2 (ja) * 1999-01-22 2007-01-17 株式会社アドバンスト・ディスプレイ 液晶表示装置およびその製造方法
JP4789322B2 (ja) * 2000-12-28 2011-10-12 株式会社半導体エネルギー研究所 半導体装置及びその作製方法

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