JP4850168B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4850168B2 JP4850168B2 JP2007315900A JP2007315900A JP4850168B2 JP 4850168 B2 JP4850168 B2 JP 4850168B2 JP 2007315900 A JP2007315900 A JP 2007315900A JP 2007315900 A JP2007315900 A JP 2007315900A JP 4850168 B2 JP4850168 B2 JP 4850168B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- amorphous semiconductor
- metal
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 131
- 239000010408 film Substances 0.000 claims description 177
- 229910052751 metal Inorganic materials 0.000 claims description 75
- 239000002184 metal Substances 0.000 claims description 75
- 239000011229 interlayer Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 description 72
- 238000000206 photolithography Methods 0.000 description 44
- 239000000758 substrate Substances 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 30
- 238000007747 plating Methods 0.000 description 28
- 239000003990 capacitor Substances 0.000 description 27
- 238000003860 storage Methods 0.000 description 27
- 238000005530 etching Methods 0.000 description 22
- 229910045601 alloy Inorganic materials 0.000 description 16
- 239000000956 alloy Substances 0.000 description 16
- 229910052804 chromium Inorganic materials 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910052779 Neodymium Inorganic materials 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000004925 Acrylic resin Substances 0.000 description 7
- 229920000178 Acrylic resin Polymers 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910018575 Al—Ti Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000005407 aluminoborosilicate glass Substances 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007315900A JP4850168B2 (ja) | 2007-12-06 | 2007-12-06 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007315900A JP4850168B2 (ja) | 2007-12-06 | 2007-12-06 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000400280A Division JP4789322B2 (ja) | 2000-12-11 | 2000-12-28 | 半導体装置及びその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011182531A Division JP5538331B2 (ja) | 2011-08-24 | 2011-08-24 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008146068A JP2008146068A (ja) | 2008-06-26 |
| JP2008146068A5 JP2008146068A5 (enExample) | 2008-08-14 |
| JP4850168B2 true JP4850168B2 (ja) | 2012-01-11 |
Family
ID=39606241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007315900A Expired - Fee Related JP4850168B2 (ja) | 2007-12-06 | 2007-12-06 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4850168B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| JP2010263182A (ja) * | 2009-04-10 | 2010-11-18 | Toppan Printing Co Ltd | 薄膜トランジスタおよび画像表示装置 |
| JP5538331B2 (ja) * | 2011-08-24 | 2014-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5604477B2 (ja) * | 2012-07-10 | 2014-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05243333A (ja) * | 1992-02-26 | 1993-09-21 | Nec Corp | 薄膜電界効果型トランジスタ基板 |
| JP3387981B2 (ja) * | 1992-10-09 | 2003-03-17 | 富士通株式会社 | 薄膜トランジスタマトリクス装置の製造方法 |
| JPH07110495A (ja) * | 1993-10-14 | 1995-04-25 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
| JPH10319431A (ja) * | 1997-05-15 | 1998-12-04 | Advanced Display:Kk | 薄膜トランジスタアレイ基板 |
| JP3868649B2 (ja) * | 1999-01-22 | 2007-01-17 | 株式会社アドバンスト・ディスプレイ | 液晶表示装置およびその製造方法 |
| JP4789322B2 (ja) * | 2000-12-28 | 2011-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
-
2007
- 2007-12-06 JP JP2007315900A patent/JP4850168B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008146068A (ja) | 2008-06-26 |
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