JP4850168B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4850168B2
JP4850168B2 JP2007315900A JP2007315900A JP4850168B2 JP 4850168 B2 JP4850168 B2 JP 4850168B2 JP 2007315900 A JP2007315900 A JP 2007315900A JP 2007315900 A JP2007315900 A JP 2007315900A JP 4850168 B2 JP4850168 B2 JP 4850168B2
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JP
Japan
Prior art keywords
wiring
film
amorphous semiconductor
metal
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007315900A
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English (en)
Japanese (ja)
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JP2008146068A5 (enExample
JP2008146068A (ja
Inventor
最史 藤川
秀明 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007315900A priority Critical patent/JP4850168B2/ja
Publication of JP2008146068A publication Critical patent/JP2008146068A/ja
Publication of JP2008146068A5 publication Critical patent/JP2008146068A5/ja
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Publication of JP4850168B2 publication Critical patent/JP4850168B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2007315900A 2007-12-06 2007-12-06 半導体装置 Expired - Fee Related JP4850168B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007315900A JP4850168B2 (ja) 2007-12-06 2007-12-06 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007315900A JP4850168B2 (ja) 2007-12-06 2007-12-06 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000400280A Division JP4789322B2 (ja) 2000-12-11 2000-12-28 半導体装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011182531A Division JP5538331B2 (ja) 2011-08-24 2011-08-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2008146068A JP2008146068A (ja) 2008-06-26
JP2008146068A5 JP2008146068A5 (enExample) 2008-08-14
JP4850168B2 true JP4850168B2 (ja) 2012-01-11

Family

ID=39606241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007315900A Expired - Fee Related JP4850168B2 (ja) 2007-12-06 2007-12-06 半導体装置

Country Status (1)

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JP (1) JP4850168B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP2010263182A (ja) * 2009-04-10 2010-11-18 Toppan Printing Co Ltd 薄膜トランジスタおよび画像表示装置
JP5538331B2 (ja) * 2011-08-24 2014-07-02 株式会社半導体エネルギー研究所 半導体装置
JP5604477B2 (ja) * 2012-07-10 2014-10-08 株式会社半導体エネルギー研究所 表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243333A (ja) * 1992-02-26 1993-09-21 Nec Corp 薄膜電界効果型トランジスタ基板
JP3387981B2 (ja) * 1992-10-09 2003-03-17 富士通株式会社 薄膜トランジスタマトリクス装置の製造方法
JPH07110495A (ja) * 1993-10-14 1995-04-25 Hitachi Ltd アクティブマトリクス型液晶表示装置
JPH10319431A (ja) * 1997-05-15 1998-12-04 Advanced Display:Kk 薄膜トランジスタアレイ基板
JP3868649B2 (ja) * 1999-01-22 2007-01-17 株式会社アドバンスト・ディスプレイ 液晶表示装置およびその製造方法
JP4789322B2 (ja) * 2000-12-28 2011-10-12 株式会社半導体エネルギー研究所 半導体装置及びその作製方法

Also Published As

Publication number Publication date
JP2008146068A (ja) 2008-06-26

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