JP2008135740A - 非晶質−結晶質タンデムナノ構造化太陽電池 - Google Patents
非晶質−結晶質タンデムナノ構造化太陽電池 Download PDFInfo
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- 239000002086 nanomaterial Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000002070 nanowire Substances 0.000 claims description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 239000002082 metal nanoparticle Substances 0.000 claims description 6
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000005234 chemical deposition Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
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- 239000012780 transparent material Substances 0.000 claims description 2
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- 230000008021 deposition Effects 0.000 abstract description 3
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- -1 Cd—Mn—O—Te Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
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- 230000006798 recombination Effects 0.000 description 4
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
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- 239000012535 impurity Substances 0.000 description 3
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 241000272194 Ciconiiformes Species 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229910052711 selenium Inorganic materials 0.000 description 2
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- 239000011787 zinc oxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910017231 MnTe Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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Abstract
【解決手段】基板102表面上に複数の細長いナノ構造体101を生成し、及び多層膜103をコンフォーマルに堆積させて複数の光活性接合を形成する段階を含んでなり、複数の光活性接合は異なる波長の光を捕獲するように設計される。ソーラーパネルは1以上の光起電力デバイスを含んでなる。
【選択図】図1
Description
pn接合ダイオードアレイ中におけるシリコンナノワイヤは記載されている(Peng et al.,“Fabrication of Large−Area Silicon Nanowire p−n Junction Diode Arrays”,Adv.Mater.,2004,vol.16,pp.73−76)。しかし、かかるアレイは光起電力デバイスで使用するように形成されていない上、かかるアレイが太陽電池の効率を高めるために役立ち得ることも示唆されていない。
図1について説明すれば、若干の実施形態では、本発明は多重接合ナノ構造体に基づく光起電力デバイスに関するものであり、かかるデバイスは下記の構成要素(a)及び(b)を含み得る。
若干の実施形態では、本発明は、本発明の一実施形態に従って、上述のような多重接合ナノ構造体に基づく光起電力デバイスを製造するための方法700(図7)に関する。図2〜5と関連させながら図7について説明すれば、段階701で基板上に複数の細長いナノ構造体を設ける。細長いナノ構造体は、若干の実施形態では半導体(図2〜3)であり、他の実施形態では導体(図4〜5)である。段階702では、細長いナノ構造体上に多層膜をコンフォーマルに堆積させるが、各層の材料は若干の実施形態では適当なドーピングを受ける。他の実施形態では、かかる材料は真性であることもあり、或いはトンネル接合として役立つこともある。段階703では、多層膜上に透明導電性材料を層として堆積させる。段階704では、デバイスを外部回路に接続するために機能し得る上部接点及び下部接点を形成する。上部接点はTCM上に配設でき、下部接点は細長いナノ構造体の反対側にある基板の表面上に配設するか、又は基板中に組み込むことができる。
若干の実施形態では、本発明は、本明細書中に開示されたような多重接合ナノ構造体に基づく光起電力デバイスの1以上を含み得るソーラーパネルに関する。かかるソーラーパネルは、各デバイスを周囲の大気環境から隔離すると共に電力の発生を可能にする。
以下の実験例は、本明細書中に開示されるようなナノワイヤ成長のための実施形態を実証するために示される。これらは本発明を例示するものであり、したがって限定するものではない。図8aは、57nmの平均直径を有する長い高密度シリコンナノワイヤの成長を示している。図8bは、182nmの平均直径を有する短い低密度シリコンナノワイヤを示している。最後に、図8cは70nmの平均直径を有するシリコンナノワイヤのランダム化アレイを示している。
以下の実験例は、本明細書中に開示されるようにナノワイヤの回りに層をコンフォーマルに堆積させるための実施形態を実証するために示される。これらは本発明を例示するものであり、したがって限定するものではない。図9aは、長い高密度シリコンナノワイヤ上にa−Siをコンフォーマルに堆積させてなる高密度ワイヤを示している。図9bは、c−Siナノワイヤ900上にコンフォーマルに堆積させたa−Siの断面図を示している。a−Si層はCVDで導入した。a−Siの第1の層910は真性であり、第2の層920はnドープされている。
101 細長いナノ構造体
102 基板
103 多層膜
104 透明導電性材料の層
105 上部接点
Claims (22)
- 基板、
光起電デバイスの基板の表面上に配設された複数の細長いナノ構造体、及び
複数の細長いナノ構造体上にコンフォーマルに堆積して複数の光活性接合を形成する多層膜
を含んでなる光起電力デバイス。 - 多層膜が、金属酸化物、非晶質シリコン、非晶質シリコン−ゲルマニウム(SiGe)、ナノ結晶質シリコン及び非晶質シリコンカーバイド(SiC)の1種以上からなる、請求項1記載の光起電力デバイス。
- 複数の細長いナノ構造体がシリコンナノワイヤからなる、請求項1記載の光起電力デバイス。
- 多層膜の層が5〜50000Åの範囲内の相対厚さを有する、請求項1記載の光起電力デバイス。
- 相対厚さは電流整合が得られるように選択される、請求項1記載の光起電力デバイス。
- 複数の光活性接合が1以上のpn接合を含む、請求項1記載の光起電力デバイス。
- 複数の光活性接合が1以上のpin接合を含む、請求項1記載の光起電力デバイス。
- 多層膜がさらに1以上のトンネル接合を含む、請求項1記載の光起電力デバイス。
- 複数の細長いナノ構造体が第1の光活性接合中に組み込まれている、請求項1記載の光起電力デバイス。
- 複数の細長いナノ構造体が導体である、請求項1記載の光起電力デバイス。
- さらに、複数の細長いナノ構造体間の空隙を満たすと共に複数の細長いナノ構造体の上方に平らな表面を与えるようにして多層膜上にコンフォーマルに配設された透明導電性材料(TCM)を含む、請求項1記載の光起電力デバイス。
- さらに、光起電力デバイスを外部回路に接続するために機能し得る上部接点及び下部接点を含み、上部接点はTCM上に配設されており、下部接点は細長いナノ構造体の反対側にある基板の表面上に配設されるか、又は基板中に組み込まれている、請求項11記載の光起電力デバイス。
- 光起電力デバイスの製造方法であって、
基板表面上に複数の細長いナノ構造体を生成する段階、及び
複数の細長いナノ構造体上に多層膜をコンフォーマルに堆積させることで複数の光活性接合を形成する段階
を含んでなる方法。 - 形成される複数の光活性接合の1以上が、pn接合、pin接合及びトンネル接合の1以上からなる、請求項13記載の方法。
- さらに、複数の細長いナノ構造体間の空隙を満たすと共に複数の細長いナノ構造体の上方に平らな表面を与えるようにして多層膜上に導電性透明材料をコンフォーマルに配設する段階を含む、請求項13記載の方法。
- さらに、光起電力デバイスを外部回路に接続するために機能し得る上部接点及び下部接点を形成する段階を含む、請求項13記載の方法。
- 細長いナノ構造体が、CVD、MOCVD、PECVD、HWCVD、原子層堆積、電気化学堆積、溶液型化学堆積及びこれらの組合せからなる群から選択される方法により成長させることで得られる、請求項13記載の方法。
- 細長いナノ構造体が、触媒を用いて金属ナノ粒子から成長させることで得られる、請求項13記載の方法。
- 金属ナノ粒子がナノ多孔質テンプレート中に存在する、請求項18記載の方法。
- 金属ナノ粒子が、金(Au)、インジウム(In)、ガリウム(Ga)及び鉄(Fe)からなる群から選択される金属からなる、請求項18記載の方法。
- 多層膜をコンフォーマルに堆積させる段階が、CVD、MOCVD、PECVD、HWCVD、スパッタリング及びこれらの組合せからなる群から選択される技術を用いて実施される、請求項13記載の方法。
- 請求項1記載の光起電力デバイスの1以上を含んでなるソーラーパネルであって、かかるデバイスを周囲の大気環境から隔離すると共に電力の発生を可能にするソーラーパネル。
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WO2009157179A1 (ja) * | 2008-06-26 | 2009-12-30 | 国立大学法人京都大学 | ワイヤー状構造をもつ半導体の製造方法及び製造装置 |
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JP2012209566A (ja) * | 2009-02-18 | 2012-10-25 | Korea Inst Of Industrial Technology | 太陽電池の製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
US20080110486A1 (en) | 2008-05-15 |
AU2007234548A1 (en) | 2008-05-29 |
AU2007234548B8 (en) | 2010-09-09 |
DE102007051884A1 (de) | 2008-07-10 |
CN101183688A (zh) | 2008-05-21 |
ES2340645A1 (es) | 2010-06-07 |
AU2007234548B2 (en) | 2010-08-19 |
ES2340645B2 (es) | 2011-05-12 |
KR20080044183A (ko) | 2008-05-20 |
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