JP5931175B2 - グラフェン系多接合フレキシブル太陽電池 - Google Patents
グラフェン系多接合フレキシブル太陽電池 Download PDFInfo
- Publication number
- JP5931175B2 JP5931175B2 JP2014502613A JP2014502613A JP5931175B2 JP 5931175 B2 JP5931175 B2 JP 5931175B2 JP 2014502613 A JP2014502613 A JP 2014502613A JP 2014502613 A JP2014502613 A JP 2014502613A JP 5931175 B2 JP5931175 B2 JP 5931175B2
- Authority
- JP
- Japan
- Prior art keywords
- graphene
- type
- subcells
- solar cell
- subcell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 127
- 229910021389 graphene Inorganic materials 0.000 title claims description 122
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 11
- 230000000712 assembly Effects 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 76
- 239000000463 material Substances 0.000 description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000005855 radiation Effects 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000000737 periodic effect Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000013082 photovoltaic technology Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000878 H alloy Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007158 vacuum pyrolysis Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
- Carbon And Carbon Compounds (AREA)
Description
Claims (16)
- 複数のサブセルを含み、前記複数のサブセルうち少なくとも2つのサブセルが異なるバンドギャップエネルギーをもち、前記複数のサブセルのうち少なくとも1つが、p型の半導体の単原子グラフェン上に重ねられたn型の半導体の単原子グラフェンを含む、多接合太陽電池。
- 前記複数のサブセルが2つ以上のサブセルを含む、請求項1に記載の多接合太陽電池。
- 前記複数のサブセルが3つ以上のサブセルを含む、請求項1または2に記載の多接合太陽電池。
- 前記異なるバンドギャップエネルギーが、入射する電磁放射から遠位にあるほど小さくなる、請求項1に記載の多接合太陽電池。
- 前記太陽電池が、直接隣接したサブセルと比較し、それぞれが約0.25eV以上の差をもつ複数のサブセルを有する、請求項3に記載の多接合太陽電池。
- 前記太陽電池が複数セットのサブセルを含み、各セットが複数のサブセルを含み、1セットにおける各サブセルがほぼ同等のバンドギャップをもち、各異なるセットが異なるバンドギャップをもつ、請求項1または2に記載の多接合太陽電池。
- 各サブセルに接触して各サブセルを離隔する透明導電性基板をさらに含む、請求項1または2に記載の多接合太陽電池。
- 光源に最も近い表面に反射防止膜および金属接点をさらに含み、光源から最も遠い表面に金属接点をさらに含み、前記接点が前記複数のサブセルにより離隔される、請求項7に記載の多接合太陽電池。
- 前記n型の単原子グラフェンに窒素またはリンをドープする、請求項1に記載の多接合太陽電池。
- 前記p型の単原子グラフェンにホウ素またはアルミニウムをドープする、請求項1に記載の多接合太陽電池。
- 複数のサブセルを含み、前記複数のサブセルうち少なくとも2つのサブセルが異なるバンドギャップエネルギーをもち、前記複数のサブセルのうち少なくとも1つが、p型の半導体グラフェン上に重ねられたn型の半導体グラフェンを含む、多接合太陽電池であって、
上部金属接点および反射防止膜と、
第1のサブセルであって、
前記上部金属接点と接触する第1の透明導電層と、
前記第1の透明導電層と接触する第1のn型グラフェン層と、
前記第1のn型グラフェン層と接触する第1のp型グラフェン層と、を含み、
前記第1のn型およびp型のグラフェン層の双方が等しいバンドギャップをもつ第1のサブセルと、
第2のサブセルであって、
先のp型グラフェン層と接触する第2の透明導電層と、
前記第2の透明導電層と接触する第2のn型グラフェン層と、
前記第2のn型グラフェン層と接触する第2のp型グラフェン層と、を含み、
前記第2のn型およびp型のグラフェン層の双方が等しいバンドギャップをもち、前記第2のn型およびp型の層が、前記第1のサブセルと等しいまたは前記第1のサブセルよりも小さいバンドギャップをもつ第2のサブセルと、
前記第2のp型グラフェン層に接触する下部透明導電層と、
前記第2のp型グラフェン層と電気的に接触する下部金属接点と、を含む、多接合太陽電池。 - 1つ以上の追加サブセルが、前記第1および第2のサブセルを離隔する、請求項11に記載の多接合太陽電池。
- p型ドープまたはn型ドープのいずれかを施されたグラフェンの単原子グラフェン層を金属薄膜上に成膜し、
前記単原子グラフェン層の表面に透明な導電性酸化物の薄膜を有する透明な導電性フレキシブル基板を配置し、
前記単原子グラフェン層から前記金属膜を除去し、
前記単原子グラフェン層を酸化することによりそのバンドギャップを形成してn型グラフェン−フレキシブル基板アセンブリを得て、
前記単原子グラフェン層を還元することによりそのバンドギャップを形成してp型グラフェン−フレキシブル基板アセンブリを得て、
等しいバンドギャップもつが、ドープ型が反対の1つ以上の他のグラフェン−フレキシブル基板アセンブリを組み合わせてpnドープのグラフェンアセンブリを得て、
1つ以上のpnドープのアセンブリまたはサブセルを、他のpnドープのアセンブリまたは等しいかまたは異なるバンドギャップをもつサブセルの上または下に重ねる各工程を含む、グラフェン多接合太陽電池の製造方法。 - 前記成膜を化学気相成長法により行う、請求項13に記載の方法。
- 前記酸化をUV/オゾン処理または酸素プラズマ処理により行う、請求項13に記載の方法。
- 前記還元を高温水素処理により行う、請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161468970P | 2011-03-29 | 2011-03-29 | |
US61/468,970 | 2011-03-29 | ||
PCT/US2012/028909 WO2012134807A2 (en) | 2011-03-29 | 2012-03-13 | Graphene-based multi-junctions flexible solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014509794A JP2014509794A (ja) | 2014-04-21 |
JP5931175B2 true JP5931175B2 (ja) | 2016-06-08 |
Family
ID=46925639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014502613A Active JP5931175B2 (ja) | 2011-03-29 | 2012-03-13 | グラフェン系多接合フレキシブル太陽電池 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9249016B2 (ja) |
EP (1) | EP2691992B1 (ja) |
JP (1) | JP5931175B2 (ja) |
KR (1) | KR20140040121A (ja) |
CN (1) | CN103477448B (ja) |
WO (1) | WO2012134807A2 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101271249B1 (ko) * | 2010-12-22 | 2013-06-10 | 한국과학기술원 | 질소가 도핑된 투명 그래핀 필름 및 이의 제조방법 |
KR101396432B1 (ko) * | 2012-08-02 | 2014-05-21 | 경희대학교 산학협력단 | 반도체 소자 및 그의 제조 방법 |
US8906787B2 (en) * | 2012-10-05 | 2014-12-09 | Cornell University | Thin film compositions and methods |
KR101430650B1 (ko) * | 2013-01-11 | 2014-08-19 | 경희대학교 산학협력단 | 광검출 소자 |
TWI493739B (zh) * | 2013-06-05 | 2015-07-21 | Univ Nat Taiwan | 熱載子光電轉換裝置及其方法 |
CN103368059B (zh) * | 2013-07-23 | 2016-04-06 | 上海交通大学 | 基于石墨烯的反射型可饱和吸收体及制备方法 |
ES2564602B1 (es) * | 2014-09-22 | 2016-12-28 | Nicolás ANTEQUERA RODRÍGUEZ | Sistema de generación energética con fuente de generación basada en pila de hidrógeno y vehículo propulsado por dicho sistema de generación |
KR102374118B1 (ko) | 2014-10-31 | 2022-03-14 | 삼성전자주식회사 | 그래핀층 및 그 형성방법과 그래핀층을 포함하는 소자 및 그 제조방법 |
CN104362210A (zh) * | 2014-11-04 | 2015-02-18 | 湖南师范大学 | 一种基于石墨烯和硒化镉纳米结构的叠层太阳能电池及其制备方法 |
CN104638034B (zh) * | 2015-02-13 | 2016-09-07 | 中国科学院重庆绿色智能技术研究院 | 一种柔性薄膜太阳能电池 |
KR102386840B1 (ko) | 2015-02-24 | 2022-04-14 | 삼성전자주식회사 | 금속과 그래핀층 사이에 절연층을 층간 삽입하는 방법 및 상기 방법을 이용한 반도체 소자 제조 방법 |
JP6565218B2 (ja) * | 2015-03-03 | 2019-08-28 | 富士通株式会社 | 光デバイス |
DE102015006379B4 (de) * | 2015-05-18 | 2022-03-17 | Azur Space Solar Power Gmbh | Skalierbare Spannungsquelle |
CN104850269B (zh) * | 2015-06-10 | 2018-02-06 | 合肥鑫晟光电科技有限公司 | 触摸屏及触摸显示装置 |
CN107564972A (zh) * | 2016-06-28 | 2018-01-09 | 湖南国盛石墨科技有限公司 | 一种石墨烯太阳能电池板 |
CN107546282A (zh) * | 2016-06-28 | 2018-01-05 | 湖南国盛石墨科技有限公司 | 一种石墨烯太阳能电池 |
US10319868B2 (en) * | 2017-01-06 | 2019-06-11 | Nanoclear Technologies Inc. | Methods and systems to boost efficiency of solar cells |
US10121919B2 (en) | 2017-01-06 | 2018-11-06 | Nanoclear Technologies Inc. | Control of surface properties by deposition of particle monolayers |
US10017384B1 (en) | 2017-01-06 | 2018-07-10 | Nanoclear Technologies Inc. | Property control of multifunctional surfaces |
US20180308983A1 (en) * | 2017-04-20 | 2018-10-25 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | A method of manufacturing an array substrate and a display substrate, and a display panel |
EP3407121B1 (en) | 2017-05-22 | 2021-09-08 | Vestel Elektronik Sanayi ve Ticaret A.S. | Laminated heterostructure device, apparatus comprising the same, and method of operating a laminated heterostructure device |
CN109728119B (zh) * | 2018-11-30 | 2020-05-12 | 浙江大学 | 一种石墨烯/AlGaAs/GaAs/GaInAs多异质结太阳能电池及其制备方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5853497A (en) * | 1996-12-12 | 1998-12-29 | Hughes Electronics Corporation | High efficiency multi-junction solar cells |
WO2003073517A1 (en) * | 2002-02-27 | 2003-09-04 | Midwest Research Institute | Monolithic photovoltaic energy conversion device |
US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
JP4780931B2 (ja) * | 2003-05-13 | 2011-09-28 | 京セラ株式会社 | 光電変換装置および光発電装置 |
JP4981672B2 (ja) * | 2004-09-24 | 2012-07-25 | プレックストロニクス インコーポレーティッド | 光電池におけるヘテロ原子位置規則性ポリ(3−置換チオフェン) |
US7846759B2 (en) * | 2004-10-21 | 2010-12-07 | Aonex Technologies, Inc. | Multi-junction solar cells and methods of making same using layer transfer and bonding techniques |
US7985615B2 (en) * | 2005-11-21 | 2011-07-26 | The Regents Of The University Of California | Method of forming a carbon nanotube/nanowire thermo-photovoltaic cell |
US7858876B2 (en) * | 2007-03-13 | 2010-12-28 | Wisconsin Alumni Research Foundation | Graphite-based photovoltaic cells |
GB0708030D0 (en) | 2007-04-25 | 2007-06-06 | Strep Ltd | Solar cell |
US7999176B2 (en) | 2007-05-08 | 2011-08-16 | Vanguard Solar, Inc. | Nanostructured solar cells |
US8431818B2 (en) * | 2007-05-08 | 2013-04-30 | Vanguard Solar, Inc. | Solar cells and photodetectors with semiconducting nanostructures |
US8563852B2 (en) * | 2007-09-10 | 2013-10-22 | Chien-Min Sung | Solar cell having improved electron emission using amorphous diamond materials |
KR101384665B1 (ko) * | 2007-09-13 | 2014-04-15 | 성균관대학교산학협력단 | 그라펜 시트를 함유하는 투명 전극, 이를 채용한 표시소자및 태양전지 |
JP2009231810A (ja) * | 2008-02-26 | 2009-10-08 | Denso Corp | 半導体カーボン膜、半導体素子、及び半導体カーボン膜の製造方法 |
US20100006136A1 (en) * | 2008-07-08 | 2010-01-14 | University Of Delaware | Multijunction high efficiency photovoltaic device and methods of making the same |
JP2010177606A (ja) * | 2009-02-02 | 2010-08-12 | Ryukoku Univ | 化合物半導体薄膜の製造方法、太陽電池および化合物半導体薄膜製造用塗布剤 |
US10164135B2 (en) * | 2009-08-07 | 2018-12-25 | Guardian Glass, LLC | Electronic device including graphene-based layer(s), and/or method or making the same |
US20110203632A1 (en) * | 2010-02-22 | 2011-08-25 | Rahul Sen | Photovoltaic devices using semiconducting nanotube layers |
CN101901640A (zh) * | 2010-06-21 | 2010-12-01 | 南京邮电大学 | 一种柔性透明导电石墨烯薄膜的制备方法 |
US20120031477A1 (en) * | 2010-08-04 | 2012-02-09 | Egypt Nanotechnology Center | Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same |
CN103943697B (zh) * | 2014-03-28 | 2016-08-31 | 京东方科技集团股份有限公司 | 柔性透明太阳能电池及其制备方法 |
-
2012
- 2012-03-13 CN CN201280015722.3A patent/CN103477448B/zh active Active
- 2012-03-13 US US13/419,001 patent/US9249016B2/en active Active
- 2012-03-13 WO PCT/US2012/028909 patent/WO2012134807A2/en unknown
- 2012-03-13 JP JP2014502613A patent/JP5931175B2/ja active Active
- 2012-03-13 KR KR1020137028231A patent/KR20140040121A/ko not_active Application Discontinuation
- 2012-03-13 EP EP12763019.2A patent/EP2691992B1/en active Active
-
2016
- 2016-01-13 US US14/994,948 patent/US20160126404A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN103477448A (zh) | 2013-12-25 |
EP2691992A2 (en) | 2014-02-05 |
WO2012134807A2 (en) | 2012-10-04 |
CN103477448B (zh) | 2016-11-09 |
EP2691992B1 (en) | 2016-05-04 |
JP2014509794A (ja) | 2014-04-21 |
WO2012134807A3 (en) | 2012-12-20 |
US20120247545A1 (en) | 2012-10-04 |
EP2691992A4 (en) | 2015-04-29 |
KR20140040121A (ko) | 2014-04-02 |
US20160126404A1 (en) | 2016-05-05 |
US9249016B2 (en) | 2016-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5931175B2 (ja) | グラフェン系多接合フレキシブル太陽電池 | |
KR101000064B1 (ko) | 이종접합 태양전지 및 그 제조방법 | |
US8435825B2 (en) | Methods for fabrication of nanowall solar cells and optoelectronic devices | |
US7977568B2 (en) | Multilayered film-nanowire composite, bifacial, and tandem solar cells | |
JP6071690B2 (ja) | 太陽電池 | |
US8314327B2 (en) | Photovoltaic cells based on nano or micro-scale structures | |
KR20080044183A (ko) | 비정질-결정성 탠덤형 나노구조 태양전지 | |
JP2008053730A (ja) | 単一コンフォーマル接合のナノワイヤ光起電力装置 | |
TW201327875A (zh) | 高效多接面太陽能電池 | |
JP2009164544A (ja) | 太陽電池のパッシベーション層構造およびその製造方法 | |
US20100218820A1 (en) | Solar cell and method of fabricating the same | |
KR101886818B1 (ko) | 이종 접합 실리콘 태양 전지의 제조 방법 | |
Karzazi et al. | Inorganic photovoltaic cells: Operating principles, technologies and efficiencies-Review | |
Angadi et al. | A review on different types of materials employed in solar photovoltaic panel | |
KR20100078813A (ko) | 태양전지의 선택적 에미터 형성방법, 및 태양전지와 그 제조방법 | |
CN114695583B (zh) | 太阳电池及生产方法、光伏组件 | |
KR20150052415A (ko) | 태양전지 | |
CN110491541B (zh) | 一种h-3碳化硅同位素电池及其制造方法 | |
KR101003677B1 (ko) | Cis계 태양전지 제조방법 | |
CN114678438B (zh) | 太阳能电池及光伏组件 | |
Chaware et al. | Solar Cell Review: The Green Environmental Energy Resource with Nanomaterial | |
CN113990973A (zh) | 硅基热光伏电池及其制备方法 | |
KR101372026B1 (ko) | 태양전지 및 이의 제조방법 | |
Chen | Flexible Inorganic Photovoltaics | |
RU2377698C1 (ru) | Способ изготовления фотоэлектрического элемента на основе германия |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150209 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151028 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151110 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160309 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160405 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160426 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5931175 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |