JP2008124267A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2008124267A JP2008124267A JP2006306896A JP2006306896A JP2008124267A JP 2008124267 A JP2008124267 A JP 2008124267A JP 2006306896 A JP2006306896 A JP 2006306896A JP 2006306896 A JP2006306896 A JP 2006306896A JP 2008124267 A JP2008124267 A JP 2008124267A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- glass
- emitting element
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 89
- 238000002161 passivation Methods 0.000 claims abstract description 46
- 230000009477 glass transition Effects 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 claims description 53
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 42
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 238000005538 encapsulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 43
- 238000010438 heat treatment Methods 0.000 description 24
- 230000008859 change Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000007731 hot pressing Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910003870 O—Li Inorganic materials 0.000 description 3
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017392 Au—Co Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006306896A JP2008124267A (ja) | 2006-11-13 | 2006-11-13 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006306896A JP2008124267A (ja) | 2006-11-13 | 2006-11-13 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008124267A true JP2008124267A (ja) | 2008-05-29 |
JP2008124267A5 JP2008124267A5 (enrdf_load_stackoverflow) | 2009-01-29 |
Family
ID=39508696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006306896A Pending JP2008124267A (ja) | 2006-11-13 | 2006-11-13 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2008124267A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010027792A (ja) * | 2008-07-17 | 2010-02-04 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
JP2011181597A (ja) * | 2010-02-26 | 2011-09-15 | Toyoda Gosei Co Ltd | 半導体発光素子 |
JP2014064021A (ja) * | 2008-05-30 | 2014-04-10 | Sharp Corp | 発光装置、面光源および液晶表示装置 |
WO2016063501A1 (ja) * | 2014-10-22 | 2016-04-28 | パナソニックIpマネジメント株式会社 | 半導体デバイス及び紫外線発光素子 |
WO2017169289A1 (ja) * | 2016-03-31 | 2017-10-05 | セントラル硝子株式会社 | 光学デバイスの製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004082036A1 (ja) * | 2003-03-10 | 2004-09-23 | Toyoda Gosei Co., Ltd. | 固体素子デバイスおよびその製造方法 |
-
2006
- 2006-11-13 JP JP2006306896A patent/JP2008124267A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004082036A1 (ja) * | 2003-03-10 | 2004-09-23 | Toyoda Gosei Co., Ltd. | 固体素子デバイスおよびその製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014064021A (ja) * | 2008-05-30 | 2014-04-10 | Sharp Corp | 発光装置、面光源および液晶表示装置 |
US9634203B2 (en) | 2008-05-30 | 2017-04-25 | Sharp Kabushiki Kaisha | Light emitting device, surface light source, liquid crystal display device, and method for manufacturing light emitting device |
JP2010027792A (ja) * | 2008-07-17 | 2010-02-04 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
JP2011181597A (ja) * | 2010-02-26 | 2011-09-15 | Toyoda Gosei Co Ltd | 半導体発光素子 |
WO2016063501A1 (ja) * | 2014-10-22 | 2016-04-28 | パナソニックIpマネジメント株式会社 | 半導体デバイス及び紫外線発光素子 |
JPWO2016063501A1 (ja) * | 2014-10-22 | 2017-07-06 | パナソニックIpマネジメント株式会社 | 半導体デバイス及び紫外線発光素子 |
WO2017169289A1 (ja) * | 2016-03-31 | 2017-10-05 | セントラル硝子株式会社 | 光学デバイスの製造方法 |
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A521 | Written amendment |
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