JP2008119818A - Ｍｅｍｓデバイスおよびその製造方法 - Google Patents
Ｍｅｍｓデバイスおよびその製造方法 Download PDFInfo
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- JP2008119818A JP2008119818A JP2007131317A JP2007131317A JP2008119818A JP 2008119818 A JP2008119818 A JP 2008119818A JP 2007131317 A JP2007131317 A JP 2007131317A JP 2007131317 A JP2007131317 A JP 2007131317A JP 2008119818 A JP2008119818 A JP 2008119818A
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- Prior art keywords
- movable electrode
- mems device
- electrode
- wiring
- movable
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000003870 refractory metal Substances 0.000 claims abstract description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 10
- 239000011733 molybdenum Substances 0.000 claims abstract description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 10
- 239000010410 layer Substances 0.000 abstract description 64
- 229910021332 silicide Inorganic materials 0.000 abstract description 45
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 45
- 239000011229 interlayer Substances 0.000 abstract description 29
- 150000004767 nitrides Chemical class 0.000 abstract description 14
- 230000001681 protective effect Effects 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- -1 phosphorus ions Chemical class 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007131317A JP2008119818A (ja) | 2006-10-20 | 2007-05-17 | Ｍｅｍｓデバイスおよびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006286035 | 2006-10-20 | ||
| JP2007131317A JP2008119818A (ja) | 2006-10-20 | 2007-05-17 | Ｍｅｍｓデバイスおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008119818A true JP2008119818A (ja) | 2008-05-29 |
| JP2008119818A5 JP2008119818A5 (enExample) | 2010-07-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007131317A Pending JP2008119818A (ja) | 2006-10-20 | 2007-05-17 | Ｍｅｍｓデバイスおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008119818A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8470628B2 (en) | 2011-06-20 | 2013-06-25 | International Business Machines Corporation | Methods to fabricate silicide micromechanical device |
| JP2013145802A (ja) * | 2012-01-13 | 2013-07-25 | Toshiba Corp | Ｍｅｍｓデバイスおよびその製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778800A (ja) * | 1993-09-07 | 1995-03-20 | Fujitsu Ltd | 微細加工方法および加速度計とその製造方法 |
| JPH08125199A (ja) * | 1994-10-28 | 1996-05-17 | Nippondenso Co Ltd | 半導体力学量センサ及びその製造方法 |
| JPH09127148A (ja) * | 1995-11-01 | 1997-05-16 | Murata Mfg Co Ltd | 角速度センサ |
| JPH1048246A (ja) * | 1996-08-08 | 1998-02-20 | Hitachi Ltd | 半導体加速度センサ |
| JPH11211483A (ja) * | 1998-01-30 | 1999-08-06 | Aisin Seiki Co Ltd | 表面マイクロマシンおよびその製造方法 |
-
2007
- 2007-05-17 JP JP2007131317A patent/JP2008119818A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778800A (ja) * | 1993-09-07 | 1995-03-20 | Fujitsu Ltd | 微細加工方法および加速度計とその製造方法 |
| JPH08125199A (ja) * | 1994-10-28 | 1996-05-17 | Nippondenso Co Ltd | 半導体力学量センサ及びその製造方法 |
| JPH09127148A (ja) * | 1995-11-01 | 1997-05-16 | Murata Mfg Co Ltd | 角速度センサ |
| JPH1048246A (ja) * | 1996-08-08 | 1998-02-20 | Hitachi Ltd | 半導体加速度センサ |
| JPH11211483A (ja) * | 1998-01-30 | 1999-08-06 | Aisin Seiki Co Ltd | 表面マイクロマシンおよびその製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8470628B2 (en) | 2011-06-20 | 2013-06-25 | International Business Machines Corporation | Methods to fabricate silicide micromechanical device |
| US8993907B2 (en) | 2011-06-20 | 2015-03-31 | International Business Machines Corporation | Silicide micromechanical device and methods to fabricate same |
| JP2013145802A (ja) * | 2012-01-13 | 2013-07-25 | Toshiba Corp | Ｍｅｍｓデバイスおよびその製造方法 |
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