JP2008112897A - 半導体集積回路及びその製造方法 - Google Patents

半導体集積回路及びその製造方法 Download PDF

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Publication number
JP2008112897A
JP2008112897A JP2006295689A JP2006295689A JP2008112897A JP 2008112897 A JP2008112897 A JP 2008112897A JP 2006295689 A JP2006295689 A JP 2006295689A JP 2006295689 A JP2006295689 A JP 2006295689A JP 2008112897 A JP2008112897 A JP 2008112897A
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Prior art keywords
integrated circuit
semiconductor integrated
circuit according
buses
manufacturing
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Pending
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JP2006295689A
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English (en)
Japanese (ja)
Inventor
Shingo Fukamizu
新吾 深水
Tamotsu Nabeshima
有 鍋島
Takashi Katsuyama
隆 勝山
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2006295689A priority Critical patent/JP2008112897A/ja
Priority to CNA2007101848183A priority patent/CN101174626A/zh
Priority to US11/976,963 priority patent/US7667316B2/en
Publication of JP2008112897A publication Critical patent/JP2008112897A/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006295689A 2006-10-31 2006-10-31 半導体集積回路及びその製造方法 Pending JP2008112897A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006295689A JP2008112897A (ja) 2006-10-31 2006-10-31 半導体集積回路及びその製造方法
CNA2007101848183A CN101174626A (zh) 2006-10-31 2007-10-29 半导体集成电路及其制造方法
US11/976,963 US7667316B2 (en) 2006-10-31 2007-10-30 Semiconductor integrated circuit and method for manufacturing the same

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Application Number Priority Date Filing Date Title
JP2006295689A JP2008112897A (ja) 2006-10-31 2006-10-31 半導体集積回路及びその製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013024677A1 (ja) * 2011-08-17 2013-02-21 株式会社村田製作所 半導体装置およびその製造方法ならびに携帯電話機
CN108807368A (zh) * 2017-04-28 2018-11-13 英飞凌科技股份有限公司 功率半导体器件和用于形成功率半导体器件的方法
CN108987386A (zh) * 2017-05-30 2018-12-11 富士电机株式会社 半导体装置
CN111406323A (zh) * 2017-12-14 2020-07-10 新电元工业株式会社 宽带隙半导体装置
CN116544163A (zh) * 2023-07-04 2023-08-04 四川明泰微电子有限公司 一种引线框架输送装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101697344B (zh) * 2009-10-28 2012-10-31 上海宏力半导体制造有限公司 一种降低芯片电源焊盘键合引线上电流的方法
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