JP2008103732A - クロスポイントメモリ用薄膜トランジスタ及びその製造方法 - Google Patents

クロスポイントメモリ用薄膜トランジスタ及びその製造方法 Download PDF

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Publication number
JP2008103732A
JP2008103732A JP2007273037A JP2007273037A JP2008103732A JP 2008103732 A JP2008103732 A JP 2008103732A JP 2007273037 A JP2007273037 A JP 2007273037A JP 2007273037 A JP2007273037 A JP 2007273037A JP 2008103732 A JP2008103732 A JP 2008103732A
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Japan
Prior art keywords
thin film
film transistor
cross
channel
point memory
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JP2007273037A
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Japanese (ja)
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JP2008103732A5 (https=
Inventor
I-Hun Song
利憲 宋
Young-Soo Park
永洙 朴
Dong-Hun Kang
東勳 姜
Chang-Jung Kim
昌▲ジュン▼ 金
Hyuk Lim
赫 林
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2008103732A publication Critical patent/JP2008103732A/ja
Publication of JP2008103732A5 publication Critical patent/JP2008103732A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
JP2007273037A 2006-10-20 2007-10-19 クロスポイントメモリ用薄膜トランジスタ及びその製造方法 Pending JP2008103732A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060102464A KR100829570B1 (ko) 2006-10-20 2006-10-20 크로스 포인트 메모리용 박막 트랜지스터 및 그 제조 방법

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JP2008103732A true JP2008103732A (ja) 2008-05-01
JP2008103732A5 JP2008103732A5 (https=) 2009-01-15

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JP2007273037A Pending JP2008103732A (ja) 2006-10-20 2007-10-19 クロスポイントメモリ用薄膜トランジスタ及びその製造方法

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Country Link
US (1) US20080093595A1 (https=)
JP (1) JP2008103732A (https=)
KR (1) KR100829570B1 (https=)
CN (1) CN101226963A (https=)

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EP2081231A2 (en) 2008-01-15 2009-07-22 Yokogawa Electric Corporation Semiconductor device with an extended base region
JP2010016348A (ja) * 2008-06-30 2010-01-21 Samsung Mobile Display Co Ltd 薄膜トランジスタ、その製造方法及び薄膜トランジスタを備える平板表示装置
JP2010093261A (ja) * 2008-10-07 2010-04-22 Samsung Electronics Co Ltd 酸化物薄膜トランジスタを備える積層メモリ装置
JP2011124557A (ja) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2012134480A (ja) * 2010-12-17 2012-07-12 Seagate Technology Llc トランジスタおよびメモリアレイ
JP2013239713A (ja) * 2010-02-05 2013-11-28 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015019096A (ja) * 2009-10-29 2015-01-29 株式会社半導体エネルギー研究所 半導体装置
JP2015097283A (ja) * 2009-10-21 2015-05-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2015144286A (ja) * 2010-08-06 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
JP2016122848A (ja) * 2010-01-20 2016-07-07 株式会社半導体エネルギー研究所 電子機器
JP2020043372A (ja) * 2010-08-06 2020-03-19 株式会社半導体エネルギー研究所 半導体装置
US11999877B2 (en) 2021-03-24 2024-06-04 Fujimi Incorporated Silicon nitride chemical mechanical polishing slurry with silicon nitride removal rate enhancers and methods of use thereof
JP2025069212A (ja) * 2009-10-30 2025-04-30 株式会社半導体エネルギー研究所 表示装置

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TWI496295B (zh) 2008-10-31 2015-08-11 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI502739B (zh) 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
US8344387B2 (en) * 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
KR20130130879A (ko) * 2009-10-21 2013-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
WO2011062068A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102598266B (zh) * 2009-11-20 2015-04-22 株式会社半导体能源研究所 半导体装置
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120037838A (ko) * 2010-10-12 2012-04-20 삼성전자주식회사 트랜지스터 및 이를 포함하는 전자소자
US8431923B2 (en) 2011-02-07 2013-04-30 Micron Technology, Inc. Semiconductor structure and semiconductor device including a diode structure and methods of forming same
CN102496631B (zh) * 2011-11-25 2014-05-21 中山大学 背电极结构的ZnO基全透明非挥发存储器及制备方法
US8865535B2 (en) 2012-04-13 2014-10-21 Sandisk Technologies Inc. Fabricating 3D non-volatile storage with transistor decoding structure
US9105468B2 (en) 2013-09-06 2015-08-11 Sandisk 3D Llc Vertical bit line wide band gap TFT decoder
US9240420B2 (en) * 2013-09-06 2016-01-19 Sandisk Technologies Inc. 3D non-volatile storage with wide band gap transistor decoder
US20160283390A1 (en) * 2015-03-27 2016-09-29 Intel Corporation Storage cache performance by using compressibility of the data as a criteria for cache insertion
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
US10153159B1 (en) 2017-11-30 2018-12-11 International Business Machines Corporation Source and drain formation using self-aligned processes
CN109786232A (zh) * 2018-12-20 2019-05-21 深圳市华星光电技术有限公司 栅极与薄膜晶体管的制造方法
WO2022043826A1 (ja) 2020-08-27 2022-03-03 株式会社半導体エネルギー研究所 半導体装置、表示装置、及び電子機器

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US5933365A (en) * 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2081231A2 (en) 2008-01-15 2009-07-22 Yokogawa Electric Corporation Semiconductor device with an extended base region
US9035313B2 (en) 2008-06-30 2015-05-19 Samsung Display Co., Ltd. Thin film transistor, method of manufacturing the same and flat panel display device having the same
JP2010016348A (ja) * 2008-06-30 2010-01-21 Samsung Mobile Display Co Ltd 薄膜トランジスタ、その製造方法及び薄膜トランジスタを備える平板表示装置
JP2010093261A (ja) * 2008-10-07 2010-04-22 Samsung Electronics Co Ltd 酸化物薄膜トランジスタを備える積層メモリ装置
JP2016171336A (ja) * 2009-10-21 2016-09-23 株式会社半導体エネルギー研究所 半導体装置
JP2020107905A (ja) * 2009-10-21 2020-07-09 株式会社半導体エネルギー研究所 半導体装置
JP2015097283A (ja) * 2009-10-21 2015-05-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2015019096A (ja) * 2009-10-29 2015-01-29 株式会社半導体エネルギー研究所 半導体装置
US10720433B2 (en) 2009-10-29 2020-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9202546B2 (en) 2009-10-29 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9806079B2 (en) 2009-10-29 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP7809227B2 (ja) 2009-10-30 2026-01-30 株式会社半導体エネルギー研究所 表示装置
JP2025069212A (ja) * 2009-10-30 2025-04-30 株式会社半導体エネルギー研究所 表示装置
US9257449B2 (en) 2009-11-13 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011124557A (ja) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP7753485B2 (ja) 2010-01-20 2025-10-14 株式会社半導体エネルギー研究所 電子機器
US9740241B2 (en) 2010-01-20 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device having transistor comprising oxide semiconductor
JP2016122848A (ja) * 2010-01-20 2016-07-07 株式会社半導体エネルギー研究所 電子機器
JP2024178347A (ja) * 2010-01-20 2024-12-24 株式会社半導体エネルギー研究所 電子機器
US12416943B2 (en) 2010-01-20 2025-09-16 Semiconductor Energy Laboratory Co., Ltd. Electronic device including a circuit storing a signal
US11573601B2 (en) 2010-01-20 2023-02-07 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
US10845846B2 (en) 2010-01-20 2020-11-24 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device being capable of contactless charge
US12001241B2 (en) 2010-01-20 2024-06-04 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device having transistor comprising oxide semiconductor
US9793276B2 (en) 2010-02-05 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistor and capacitor
US9190413B2 (en) 2010-02-05 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013239713A (ja) * 2010-02-05 2013-11-28 Semiconductor Energy Lab Co Ltd 半導体装置
US11677384B2 (en) 2010-08-06 2023-06-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit with semiconductor layer having indium, zinc, and oxygen
US11177792B2 (en) 2010-08-06 2021-11-16 Semiconductor Energy Laboratory Co., Ltd. Power supply semiconductor integrated memory control circuit
US12021530B2 (en) 2010-08-06 2024-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP2020043372A (ja) * 2010-08-06 2020-03-19 株式会社半導体エネルギー研究所 半導体装置
US12273109B2 (en) 2010-08-06 2025-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP2015144286A (ja) * 2010-08-06 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
JP2012134480A (ja) * 2010-12-17 2012-07-12 Seagate Technology Llc トランジスタおよびメモリアレイ
US11999877B2 (en) 2021-03-24 2024-06-04 Fujimi Incorporated Silicon nitride chemical mechanical polishing slurry with silicon nitride removal rate enhancers and methods of use thereof

Also Published As

Publication number Publication date
KR100829570B1 (ko) 2008-05-14
US20080093595A1 (en) 2008-04-24
CN101226963A (zh) 2008-07-23

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