CN101226963A - 用于交叉点存储器的薄膜晶体管及其制造方法 - Google Patents

用于交叉点存储器的薄膜晶体管及其制造方法 Download PDF

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Publication number
CN101226963A
CN101226963A CNA2007103007996A CN200710300799A CN101226963A CN 101226963 A CN101226963 A CN 101226963A CN A2007103007996 A CNA2007103007996 A CN A2007103007996A CN 200710300799 A CN200710300799 A CN 200710300799A CN 101226963 A CN101226963 A CN 101226963A
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CN
China
Prior art keywords
thin film
film transistor
channel
gate
combinations
Prior art date
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Pending
Application number
CNA2007103007996A
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English (en)
Chinese (zh)
Inventor
宋利宪
朴永洙
姜东勋
金昌桢
林赫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101226963A publication Critical patent/CN101226963A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
CNA2007103007996A 2006-10-20 2007-10-22 用于交叉点存储器的薄膜晶体管及其制造方法 Pending CN101226963A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060102464A KR100829570B1 (ko) 2006-10-20 2006-10-20 크로스 포인트 메모리용 박막 트랜지스터 및 그 제조 방법
KR102464/06 2006-10-20

Publications (1)

Publication Number Publication Date
CN101226963A true CN101226963A (zh) 2008-07-23

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ID=39317061

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007103007996A Pending CN101226963A (zh) 2006-10-20 2007-10-22 用于交叉点存储器的薄膜晶体管及其制造方法

Country Status (4)

Country Link
US (1) US20080093595A1 (https=)
JP (1) JP2008103732A (https=)
KR (1) KR100829570B1 (https=)
CN (1) CN101226963A (https=)

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CN109786232A (zh) * 2018-12-20 2019-05-21 深圳市华星光电技术有限公司 栅极与薄膜晶体管的制造方法
JP2025069212A (ja) * 2009-10-30 2025-04-30 株式会社半導体エネルギー研究所 表示装置

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KR20100038986A (ko) * 2008-10-07 2010-04-15 삼성전자주식회사 산화물 박막 트랜지스터를 포함하는 적층 메모리 장치
TWI496295B (zh) 2008-10-31 2015-08-11 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI502739B (zh) 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
US8344387B2 (en) * 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
KR101591613B1 (ko) * 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130130879A (ko) * 2009-10-21 2013-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
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CN102598266B (zh) * 2009-11-20 2015-04-22 株式会社半导体能源研究所 半导体装置
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
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KR102248998B1 (ko) 2010-01-20 2021-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
CN102725842B (zh) 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
TWI605549B (zh) * 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
KR20120037838A (ko) * 2010-10-12 2012-04-20 삼성전자주식회사 트랜지스터 및 이를 포함하는 전자소자
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CN102496631B (zh) * 2011-11-25 2014-05-21 中山大学 背电极结构的ZnO基全透明非挥发存储器及制备方法
US8865535B2 (en) 2012-04-13 2014-10-21 Sandisk Technologies Inc. Fabricating 3D non-volatile storage with transistor decoding structure
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US9240420B2 (en) * 2013-09-06 2016-01-19 Sandisk Technologies Inc. 3D non-volatile storage with wide band gap transistor decoder
US20160283390A1 (en) * 2015-03-27 2016-09-29 Intel Corporation Storage cache performance by using compressibility of the data as a criteria for cache insertion
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
US10153159B1 (en) 2017-11-30 2018-12-11 International Business Machines Corporation Source and drain formation using self-aligned processes
WO2022043826A1 (ja) 2020-08-27 2022-03-03 株式会社半導体エネルギー研究所 半導体装置、表示装置、及び電子機器
TWI895590B (zh) 2021-03-24 2025-09-01 日商福吉米股份有限公司 具有氮化矽去除速率增加劑的氮化矽化學機械拋光漿料及其使用方法

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JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025069212A (ja) * 2009-10-30 2025-04-30 株式会社半導体エネルギー研究所 表示装置
JP7809227B2 (ja) 2009-10-30 2026-01-30 株式会社半導体エネルギー研究所 表示装置
CN109786232A (zh) * 2018-12-20 2019-05-21 深圳市华星光电技术有限公司 栅极与薄膜晶体管的制造方法

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Publication number Publication date
KR100829570B1 (ko) 2008-05-14
JP2008103732A (ja) 2008-05-01
US20080093595A1 (en) 2008-04-24

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Open date: 20080723