JP2008103523A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2008103523A JP2008103523A JP2006284634A JP2006284634A JP2008103523A JP 2008103523 A JP2008103523 A JP 2008103523A JP 2006284634 A JP2006284634 A JP 2006284634A JP 2006284634 A JP2006284634 A JP 2006284634A JP 2008103523 A JP2008103523 A JP 2008103523A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resin composition
- photosensitive resin
- semiconductor element
- element chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】第1の半導体素子チップ5上に、接合剤層8を介して第2の半導体素子チップ9が積層されており、接合剤層8が、感光性樹脂組成物の硬化物からなり、該感光性樹脂組成物が、部分的に光を照射した際に、光が照射された露光部において光の照射により酸または塩基を発生し、未露光部の感光性樹脂組成物が露光部側に移動し、露光部において硬化する感光性樹脂組成物からなり、未露光部が、第1の半導体素子チップ5の上面に設けられた電極6a,6bの少なくとも一部を含むように形成されている、半導体装置1。
【選択図】図1
Description
また、図8(a)に示すように、接合剤層47は、電極としてのバンプ44a,44b及びバンプ44a,44bに接合されている電極45a,45bを囲むように設けられている。この接合剤層47は、受光領域Bを除いて、かつ上記バンプ44a,44bが設けられている部分を囲むように設けられている。接合剤層47の内側縁は図8(b)の破線Cで示す位置となる。すなわち、本実施形態では、受光領域Bを囲むように、枠状の平面形状を有するように、接合剤層47が形成されている。
2…基板
3a〜3d…電極ランド
4…接合剤
5…半導体素子チップ
6a,6b…電極
7a,7b…ボンディングワイヤー
8…接合剤層
8A,8B…感光性樹脂組成物層
9…半導体素子チップ
10a,10b…電極
11a,11b…ボンディングワイヤー
12…マスク
12a…光透過部
12b…遮光部
13…ウェハ
21…半導体素子チップ
21a,21b…領域
21c…電極
22…半導体素子チップ
22a,22b…領域
23…半導体素子チップ
31…基板
31a,31b…電極
33…半導体装置
33B…感光性樹脂組成物層
34…マスク
34a,34b…遮光部
34c,34d…遮光フィルム
41…イメージセンサー
42…センサー本体
43…レンズ
44…半導体基板
44a,44b…バンプ
45…基板
46…マイクロレンズ
47…接合剤層
47A…感光性樹脂組成物層
47B…感光性樹脂組成物層
49…マスク
51…ウェハ
52…レーザー装置
61…ウェハ
62…半導体素子チップ
63…スクライブエリア
64…領域
Claims (17)
- 上面に他の部分に電気的に接続するための電極が形成されている第1の半導体装置構成部材と、
前記第1の半導体装置構成部材の上面において部分的に設けられた接合剤層と、
前記接合剤層を介して前記第1の半導体装置構成部材に積層され、接合されている第2の半導体装置構成部材とを備え、
前記接合剤層が、感光性樹脂組成物の硬化物からなり、該感光性樹脂組成物が、部分的に光を照射した際に、光が照射された露光部において光の照射により酸または塩基を発生し、未露光部の感光性樹脂組成物が露光部側に移動し、露光部において硬化する感光性樹脂組成物からなり、前記未露光部が、前記第1の半導体装置の上面に設けられており、かつ第1の半導体装置構成部材を前記電極の少なくとも一部を含むことを特徴とする、半導体装置。 - 第1の半導体装置構成部材が、第1の半導体素子チップであり、第2の半導体装置構成部材が、第2の半導体素子チップであり、それによって、複数の半導体素子チップが積層されている、請求項1に記載の半導体装置。
- 前記第1の半導体素子チップの上面に設けられた前記電極に一端が接続されているボンディングワイヤーをさらに備え、該ボンディングワイヤーが、第1,第2の半導体素子チップを積層してなる積層体外に延ばされている、請求項2に記載の半導体装置。
- 前記第1の半導体素子チップと第2の半導体素子チップの平面形状が同一であり、前記電極が、上方に第2の半導体素子チップが位置する部分において、前記第1の半導体素子チップの上面に配置されており、前記ボンディングワイヤーが、第1,第2の半導体素子チップ間の隙間から積層体の外側に延ばされている、請求項3に記載の半導体装置。
- 前記第1,第2の半導体素子チップが、前記第1の半導体素子チップの上面に設けられた電極の上方に第2の半導体素子チップが位置しないように積層されている、請求項2に記載の半導体装置。
- 前記第1の半導体装置構成部材が基板または半導体素子チップであり、前記第2の半導体装置構成部材が第2の半導体素子チップであり、前記基板または前記第1の半導体素子チップの上面に設けられた前記電極に電気的に接続されるバンプが前記第2の半導体素子チップの下面に形成されており、前記接合剤層が、前記バンプ及び前記電極を取り囲むように設けられている、請求項1に記載の半導体装置。
- 前記第1の半導体装置構成部材が上面に複数のマイクロレンズが配置された受光領域と、前記電極として、受光領域を囲む外側の部分に配置された複数のバンプとを有し、
前記第2の半導体装置構成部材が、前記バンプの上端に接合される第2の電極を下面に有し、
前記接合剤層が、前記バンプ及び前記第2の半導体装置構成部材の下面に形成された第2の電極を囲むように、かつ前記受光領域を除いた領域に設けられており、それによってイメージセンサーが構成されている、請求項1に記載の半導体装置。 - 前記接合剤層が、前記受光領域を囲む枠状の領域であって、前記複数のバンプが配置されている部分の内側に位置しており、それによって接合剤層により枠状のダムが形成されている、請求項7に記載の半導体装置。
- 前記感光性樹脂組成物の硬化物により、前記接合剤層だけでなく前記マイクロレンズが形成されている、請求項7または8に記載の半導体装置。
- 前記感光性樹脂組成物が、酸または塩基の作用により硬化する硬化性樹脂と、光の照射により酸または塩基を発生する光酸または光塩基発生剤とを含有する感光性樹脂組成物である、請求項1〜9のいずれか1項に記載の半導体装置。
- 前記感光性樹脂組成物が、酸または塩基の作用により酸または塩基を増殖的に生成する酸または塩基増殖剤をさらに含有する、請求項10に記載の半導体装置。
- 前記硬化性樹脂が、ノボラック系エポキシオリゴマーである、請求項10または11に記載の半導体装置。
- 請求項1〜14のいずれか1項に記載の半導体装置の製造方法であって、前記第1の半導体装置構成部材の上面に前記感光性樹脂組成物を所定の厚みに塗布して感光性樹脂組成物層を形成する工程と、
前記感光性樹脂組成物層に未露光部が少なくとも前記電極の一部を含むようにマスクを介して選択的に露光し、それによって露光部において酸または塩基を発生させ、未露光部の感光性樹脂組成物を露光部側に移動させ、露光部において感光性樹脂組成物を硬化させつつ、第2の半導体素子構成部材を接合する工程を備えることを特徴とする、半導体装置の製造方法。 - 前記第1の半導体装置構成部材と第2の半導体装置構成部材とを接合している接合剤層として、枠状の接合剤層が形成されるように前記枠状の接合剤層を露光部として露光を行い、それによって、接合剤層からなる枠状のダムを形成することを特徴とする、請求項15に記載の半導体装置の製造方法。
- 前記第1の半導体装置構成部材がダイシングに際してスクライブされて除去されるスクライブエリアを介して連ねられた第1のウェハと、前記第2の半導体装置構成部材がスクライブエリアを介して連ねられた第2のウェハとを用意する工程をさらに備え、
前記感光性樹脂組成物層を前記第1のウェハ上に塗工し、前記感光性樹脂組成物層を部分的に露光するに際し、前記スクライブエリアを未露光部とするようにして露光を行い、それによって、上記スクライブエリアから感光性樹脂組成物が露光部側に移動し、露光部において硬化される、請求項15に記載の半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006284634A JP5096723B2 (ja) | 2006-10-19 | 2006-10-19 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006284634A JP5096723B2 (ja) | 2006-10-19 | 2006-10-19 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008103523A true JP2008103523A (ja) | 2008-05-01 |
JP5096723B2 JP5096723B2 (ja) | 2012-12-12 |
Family
ID=39437634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006284634A Active JP5096723B2 (ja) | 2006-10-19 | 2006-10-19 | 半導体装置及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5096723B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013240043A (ja) * | 2012-05-14 | 2013-11-28 | Samsung Electro-Mechanics Co Ltd | カメラモジュールの製造装置及び方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11121653A (ja) * | 1997-07-31 | 1999-04-30 | Fuji Film Microdevices Co Ltd | 半導体装置とその製造方法 |
JP2002359345A (ja) * | 2001-03-30 | 2002-12-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004039897A (ja) * | 2002-07-04 | 2004-02-05 | Toshiba Corp | 電子デバイスの接続方法 |
JP2004043760A (ja) * | 2001-08-27 | 2004-02-12 | Hitachi Chem Co Ltd | 接着シート並びに半導体装置及びその製造方法 |
JP2004334184A (ja) * | 2003-04-16 | 2004-11-25 | Sharp Corp | 三次元構造物形成方法および露光装置 |
JP2005026639A (ja) * | 2003-07-04 | 2005-01-27 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2006100656A (ja) * | 2004-09-30 | 2006-04-13 | Nikon Corp | ウェハ積層時の重ね合わせ方法 |
JP2006114756A (ja) * | 2004-10-15 | 2006-04-27 | Sumitomo Bakelite Co Ltd | 樹脂封止型半導体装置 |
JP2006228809A (ja) * | 2005-02-15 | 2006-08-31 | Taiyo Yuden Co Ltd | 半導体装置およびその製造方法 |
WO2006095670A1 (ja) * | 2005-03-11 | 2006-09-14 | Sekisui Chemical Co., Ltd. | 塩基増殖剤及び塩基反応性硬化性組成物 |
WO2006103962A1 (ja) * | 2005-03-25 | 2006-10-05 | Sumitomo Bakelite Co., Ltd. | 半導体装置、並びにバッファーコート用樹脂組成物、ダイボンド用樹脂組成物、及び封止用樹脂組成物 |
-
2006
- 2006-10-19 JP JP2006284634A patent/JP5096723B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11121653A (ja) * | 1997-07-31 | 1999-04-30 | Fuji Film Microdevices Co Ltd | 半導体装置とその製造方法 |
JP2002359345A (ja) * | 2001-03-30 | 2002-12-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004043760A (ja) * | 2001-08-27 | 2004-02-12 | Hitachi Chem Co Ltd | 接着シート並びに半導体装置及びその製造方法 |
JP2004039897A (ja) * | 2002-07-04 | 2004-02-05 | Toshiba Corp | 電子デバイスの接続方法 |
JP2004334184A (ja) * | 2003-04-16 | 2004-11-25 | Sharp Corp | 三次元構造物形成方法および露光装置 |
JP2005026639A (ja) * | 2003-07-04 | 2005-01-27 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2006100656A (ja) * | 2004-09-30 | 2006-04-13 | Nikon Corp | ウェハ積層時の重ね合わせ方法 |
JP2006114756A (ja) * | 2004-10-15 | 2006-04-27 | Sumitomo Bakelite Co Ltd | 樹脂封止型半導体装置 |
JP2006228809A (ja) * | 2005-02-15 | 2006-08-31 | Taiyo Yuden Co Ltd | 半導体装置およびその製造方法 |
WO2006095670A1 (ja) * | 2005-03-11 | 2006-09-14 | Sekisui Chemical Co., Ltd. | 塩基増殖剤及び塩基反応性硬化性組成物 |
WO2006103962A1 (ja) * | 2005-03-25 | 2006-10-05 | Sumitomo Bakelite Co., Ltd. | 半導体装置、並びにバッファーコート用樹脂組成物、ダイボンド用樹脂組成物、及び封止用樹脂組成物 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013240043A (ja) * | 2012-05-14 | 2013-11-28 | Samsung Electro-Mechanics Co Ltd | カメラモジュールの製造装置及び方法 |
CN103428413A (zh) * | 2012-05-14 | 2013-12-04 | 三星电机株式会社 | 用于制造相机模块的设备和方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5096723B2 (ja) | 2012-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107134414B (zh) | 半导体装置及其制造方法、倒装芯片型半导体装置及其制造方法 | |
KR102475583B1 (ko) | 반도체 장치, 적층형 반도체 장치, 밀봉 후 적층형 반도체 장치 및 이들의 제조 방법 | |
TWI483389B (zh) | 受光裝置 | |
JP4863030B2 (ja) | 電子装置の製造方法、電子装置、電子装置パッケージの製造方法および電子装置パッケージ | |
KR20060064007A (ko) | 화학증폭형 포지티브 감광성 열경화성 수지 조성물, 경화물품의 형성 방법, 및 기능 소자의 제조 방법 | |
JP4374840B2 (ja) | ポジ型感光性樹脂組成物、半導体素子の製造方法および、半導体装置 | |
JP2008103524A (ja) | 回路基板材及びその製造方法並びに電子部品装置及び多層基板 | |
JP5096723B2 (ja) | 半導体装置及びその製造方法 | |
JP2019109295A (ja) | 感光性樹脂組成物および電子装置 | |
JP6870724B2 (ja) | ネガ型感光性樹脂組成物、半導体装置および電子機器 | |
JP2021096486A (ja) | ネガ型感光性樹脂組成物、及びそれを用いた半導体装置 | |
JP2019109294A (ja) | 感光性樹脂組成物および電子装置 | |
JP2019113739A (ja) | 感光性樹脂組成物および電子装置 | |
US7351518B2 (en) | Composition which forms an electrically conductive resist layer and a method for patterning a photoresist using the resist layer | |
JP6729818B2 (ja) | バンプ保護膜用感光性樹脂組成物、半導体装置、半導体装置の製造方法および電子機器 | |
JP2019158949A (ja) | 感光性樹脂組成物および電子装置 | |
JP2021047378A (ja) | 感光性樹脂組成物、電子デバイスの製造方法および電子デバイス | |
JP7348857B2 (ja) | 半導体装置の製造方法 | |
JP2019040134A (ja) | 感光性樹脂組成物および電子装置 | |
JP2019113756A (ja) | パターニング方法および半導体装置の製造方法 | |
JP2008102303A (ja) | 表示装置の製造方法及び表示装置 | |
JP2019079971A (ja) | 電子デバイスの製造方法、および、電子デバイスの製造方法に用いられる感光性接着剤樹脂組成物 | |
CN101040383A (zh) | 光接收装置 | |
JP2018151475A (ja) | 電子装置の製造方法 | |
JP2019060958A (ja) | パターニング方法および半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090819 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100709 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110610 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110805 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120409 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120828 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120921 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5096723 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150928 Year of fee payment: 3 |