JP2008101270A5 - - Google Patents

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Publication number
JP2008101270A5
JP2008101270A5 JP2007228947A JP2007228947A JP2008101270A5 JP 2008101270 A5 JP2008101270 A5 JP 2008101270A5 JP 2007228947 A JP2007228947 A JP 2007228947A JP 2007228947 A JP2007228947 A JP 2007228947A JP 2008101270 A5 JP2008101270 A5 JP 2008101270A5
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JP
Japan
Prior art keywords
target
magnetron
sputtering apparatus
semiconductor substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2007228947A
Other languages
English (en)
Japanese (ja)
Other versions
JP4768689B2 (ja
JP2008101270A (ja
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Publication date
Application filed filed Critical
Priority to JP2007228947A priority Critical patent/JP4768689B2/ja
Priority claimed from JP2007228947A external-priority patent/JP4768689B2/ja
Priority to US11/859,138 priority patent/US9103025B2/en
Priority to KR1020070096416A priority patent/KR100885331B1/ko
Publication of JP2008101270A publication Critical patent/JP2008101270A/ja
Publication of JP2008101270A5 publication Critical patent/JP2008101270A5/ja
Application granted granted Critical
Publication of JP4768689B2 publication Critical patent/JP4768689B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007228947A 2006-09-22 2007-09-04 マグネトロン型スパッタリング装置および半導体装置の製造方法 Expired - Fee Related JP4768689B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007228947A JP4768689B2 (ja) 2006-09-22 2007-09-04 マグネトロン型スパッタリング装置および半導体装置の製造方法
US11/859,138 US9103025B2 (en) 2006-09-22 2007-09-21 Magnetron sputtering apparatus and method of manufacturing semiconductor device
KR1020070096416A KR100885331B1 (ko) 2006-09-22 2007-09-21 마그네트론형 스퍼터링 장치 및 반도체 장치의 제조 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006257749 2006-09-22
JP2006257749 2006-09-22
JP2007228947A JP4768689B2 (ja) 2006-09-22 2007-09-04 マグネトロン型スパッタリング装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2008101270A JP2008101270A (ja) 2008-05-01
JP2008101270A5 true JP2008101270A5 (enExample) 2009-11-12
JP4768689B2 JP4768689B2 (ja) 2011-09-07

Family

ID=39414295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007228947A Expired - Fee Related JP4768689B2 (ja) 2006-09-22 2007-09-04 マグネトロン型スパッタリング装置および半導体装置の製造方法

Country Status (3)

Country Link
US (1) US9103025B2 (enExample)
JP (1) JP4768689B2 (enExample)
KR (1) KR100885331B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386507B (zh) * 2009-05-19 2013-02-21 Univ Nat Kaohsiung 1St Univ Sc Magnetron sputtering equipment
JP5730077B2 (ja) * 2010-06-03 2015-06-03 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
CN104810228B (zh) 2014-01-23 2017-10-13 北京北方华创微电子装备有限公司 螺旋形磁控管及磁控溅射设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289864A (ja) * 1985-06-27 1987-04-24 Matsushita Electric Ind Co Ltd マグネトロンスパツタ装置
JPS63100180A (ja) * 1986-10-16 1988-05-02 Anelva Corp マグネトロンスパツタリング装置
US4995958A (en) * 1989-05-22 1991-02-26 Varian Associates, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
JPH06240453A (ja) * 1993-02-19 1994-08-30 Ulvac Japan Ltd マグネトロンスパッタ装置
JP3023270B2 (ja) * 1993-12-08 2000-03-21 信越化学工業株式会社 マグネトロンスパッタ用磁気回路
JP2912864B2 (ja) * 1995-11-28 1999-06-28 アプライド マテリアルズ インコーポレイテッド スパッタリング装置のマグネトロンユニット
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6183614B1 (en) * 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
JP2001338912A (ja) * 2000-05-29 2001-12-07 Tokyo Electron Ltd プラズマ処理装置および処理方法
US6358376B1 (en) * 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
JP4274452B2 (ja) * 2001-03-30 2009-06-10 芝浦メカトロニクス株式会社 スパッタ源及び成膜装置
JP2003013219A (ja) * 2001-06-27 2003-01-15 Anelva Corp マグネトロンスパッタリング装置
JP2005002382A (ja) * 2003-06-10 2005-01-06 Applied Materials Inc マグネトロンユニット及びスパッタリング装置
US7682495B2 (en) * 2005-04-14 2010-03-23 Tango Systems, Inc. Oscillating magnet in sputtering system

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