JP2008098866A - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
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- JP2008098866A JP2008098866A JP2006276907A JP2006276907A JP2008098866A JP 2008098866 A JP2008098866 A JP 2008098866A JP 2006276907 A JP2006276907 A JP 2006276907A JP 2006276907 A JP2006276907 A JP 2006276907A JP 2008098866 A JP2008098866 A JP 2008098866A
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- light detection
- detection element
- wiring board
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- 230000003287 optical effect Effects 0.000 title abstract description 10
- 238000001514 detection method Methods 0.000 claims abstract description 95
- 238000009434 installation Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 description 13
- ZMHWQAHZKUPENF-UHFFFAOYSA-N 1,2-dichloro-3-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC(Cl)=C1Cl ZMHWQAHZKUPENF-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/147—Structural association of two or more printed circuits at least one of the printed circuits being bent or folded, e.g. by using a flexible printed circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09918—Optically detected marks used for aligning tool relative to the PCB, e.g. for mounting of components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0067—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto an inorganic, non-metallic substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
- Measurement Of Radiation (AREA)
Abstract
【解決手段】光検出装置3では、光検出素子11の位置基準となる位置合わせ用マーク18A,18Bが光検出素子11の表面側に形成されている。また、ピンベース13には、コールドプレート2に嵌め合わされるネジ付嵌合ピン32が設けられ、ネジ付嵌合ピン32は、配線基板12のスリット部23及び切欠部24から露出する位置合わせ用マーク18A,18Bに対して位置決めされた位置決め部33を介して、光検出素子11に対して精度良く位置合わせされている。したがって、光検出装置3では、コールドプレート2の凹部4にネジ付嵌合ピン32を嵌め合わせるだけで、コールドプレート2に対して光検出素子11が精度良く位置合わせされる。
【選択図】図2
Description
Claims (3)
- 一方の面から入射した光を他方の面側の光検出部で検出する光検出素子と、
前記光検出素子の他方の側に設けられ、前記光検出部と電気的に接続された配線基板と、
前記配線基板の他方の側に設けられ、所定の被設置体に設置されるベースとを備え、
前記光検出素子の他方の面には、前記光検出素子の位置基準となる位置合わせ用マークが形成され、
前記配線基板には、前記位置合わせ用マークを露出させる窓部が形成され、
前記ベースは、前記窓部から露出する前記位置合わせ用マークに対して位置決めされた位置決め部と、この位置決め部に対して位置決めされ、前記被設置体に嵌め合わされる嵌合部とを有していることを特徴とする光検出装置。 - 前記位置合わせ用マークは、前記光検出素子の中心線を通るように2箇所以上に形成され、
前記位置決め部は、前記ベースの一の側面と、この側面における一の端部とであることを特徴とする請求項1記載の光検出装置。 - 前記嵌合部は、前記ベースの他方の面側に突出するピンであることを特徴とする請求項1又は2記載の光検出装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006276907A JP4421589B2 (ja) | 2006-10-10 | 2006-10-10 | 光検出装置 |
EP07829420.4A EP2077582B1 (en) | 2006-10-10 | 2007-10-09 | Light detecting device |
CN2007800376094A CN101523601B (zh) | 2006-10-10 | 2007-10-09 | 光检测装置 |
PCT/JP2007/069682 WO2008044677A1 (fr) | 2006-10-10 | 2007-10-09 | Photodétecteur |
KR1020097000934A KR101317586B1 (ko) | 2006-10-10 | 2007-10-09 | 광검출장치 |
US12/445,017 US8110802B2 (en) | 2006-10-10 | 2007-10-09 | Photodetecting device including base with positioning portion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006276907A JP4421589B2 (ja) | 2006-10-10 | 2006-10-10 | 光検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008098866A true JP2008098866A (ja) | 2008-04-24 |
JP4421589B2 JP4421589B2 (ja) | 2010-02-24 |
Family
ID=39282870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006276907A Active JP4421589B2 (ja) | 2006-10-10 | 2006-10-10 | 光検出装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8110802B2 (ja) |
EP (1) | EP2077582B1 (ja) |
JP (1) | JP4421589B2 (ja) |
KR (1) | KR101317586B1 (ja) |
CN (1) | CN101523601B (ja) |
WO (1) | WO2008044677A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8072764B2 (en) * | 2009-03-09 | 2011-12-06 | Apple Inc. | Multi-part substrate assemblies for low profile portable electronic devices |
US9691801B2 (en) | 2014-12-22 | 2017-06-27 | Stmicroelectronics Pte Ltd | Image sensing device with cap and related methods |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196680A (ja) | 1992-12-22 | 1994-07-15 | Hamamatsu Photonics Kk | 半導体エネルギー検出器とその製造方法 |
US6020646A (en) * | 1997-12-05 | 2000-02-01 | The Charles Stark Draper Laboratory, Inc. | Intergrated circuit die assembly |
JP4588837B2 (ja) * | 2000-04-11 | 2010-12-01 | 浜松ホトニクス株式会社 | 半導体受光装置 |
JP2003060948A (ja) | 2001-06-05 | 2003-02-28 | Seiko Precision Inc | 固体撮像装置 |
US20040012688A1 (en) * | 2002-07-16 | 2004-01-22 | Fairchild Imaging | Large area charge coupled device camera |
US20040012689A1 (en) * | 2002-07-16 | 2004-01-22 | Fairchild Imaging | Charge coupled devices in tiled arrays |
JP2004134578A (ja) * | 2002-10-10 | 2004-04-30 | Hamamatsu Photonics Kk | 光検出装置及びその製造方法 |
US7525659B2 (en) * | 2003-01-15 | 2009-04-28 | Negevtech Ltd. | System for detection of water defects |
JP4373695B2 (ja) * | 2003-04-16 | 2009-11-25 | 浜松ホトニクス株式会社 | 裏面照射型光検出装置の製造方法 |
JP4351012B2 (ja) | 2003-09-25 | 2009-10-28 | 浜松ホトニクス株式会社 | 半導体装置 |
JP4687053B2 (ja) * | 2004-09-29 | 2011-05-25 | 株式会社ニコン | 撮像素子ユニットおよびデジタルカメラ |
JP4451864B2 (ja) * | 2006-07-11 | 2010-04-14 | 浜松ホトニクス株式会社 | 配線基板及び固体撮像装置 |
JP4463793B2 (ja) * | 2006-10-10 | 2010-05-19 | 浜松ホトニクス株式会社 | 光検出装置 |
-
2006
- 2006-10-10 JP JP2006276907A patent/JP4421589B2/ja active Active
-
2007
- 2007-10-09 CN CN2007800376094A patent/CN101523601B/zh active Active
- 2007-10-09 US US12/445,017 patent/US8110802B2/en active Active
- 2007-10-09 KR KR1020097000934A patent/KR101317586B1/ko active IP Right Grant
- 2007-10-09 WO PCT/JP2007/069682 patent/WO2008044677A1/ja active Application Filing
- 2007-10-09 EP EP07829420.4A patent/EP2077582B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8110802B2 (en) | 2012-02-07 |
KR20090069263A (ko) | 2009-06-30 |
EP2077582A1 (en) | 2009-07-08 |
US20100065742A1 (en) | 2010-03-18 |
KR101317586B1 (ko) | 2013-10-11 |
CN101523601B (zh) | 2010-09-29 |
EP2077582A4 (en) | 2012-05-02 |
JP4421589B2 (ja) | 2010-02-24 |
CN101523601A (zh) | 2009-09-02 |
EP2077582B1 (en) | 2013-05-22 |
WO2008044677A1 (fr) | 2008-04-17 |
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