JP2008085312A5 - - Google Patents
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- JP2008085312A5 JP2008085312A5 JP2007215514A JP2007215514A JP2008085312A5 JP 2008085312 A5 JP2008085312 A5 JP 2008085312A5 JP 2007215514 A JP2007215514 A JP 2007215514A JP 2007215514 A JP2007215514 A JP 2007215514A JP 2008085312 A5 JP2008085312 A5 JP 2008085312A5
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- JP
- Japan
- Prior art keywords
- semiconductor film
- forming
- substrate
- laser beam
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007215514A JP5216276B2 (ja) | 2006-08-30 | 2007-08-22 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006233046 | 2006-08-30 | ||
JP2006233046 | 2006-08-30 | ||
JP2007215514A JP5216276B2 (ja) | 2006-08-30 | 2007-08-22 | 半導体装置の作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013041451A Division JP5628949B2 (ja) | 2006-08-30 | 2013-03-04 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008085312A JP2008085312A (ja) | 2008-04-10 |
JP2008085312A5 true JP2008085312A5 (de) | 2010-09-30 |
JP5216276B2 JP5216276B2 (ja) | 2013-06-19 |
Family
ID=39355782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007215514A Expired - Fee Related JP5216276B2 (ja) | 2006-08-30 | 2007-08-22 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5216276B2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6580475B2 (en) * | 2000-04-27 | 2003-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR20110056542A (ko) | 2008-09-12 | 2011-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR101803264B1 (ko) * | 2008-09-19 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
EP2172804B1 (de) * | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Anzeigevorrichtung |
EP2256814B1 (de) * | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxid-Halbleiterbauelement und Verfahren zu seiner Herstellung |
CN104835850B (zh) * | 2009-07-10 | 2018-10-26 | 株式会社半导体能源研究所 | 半导体器件 |
WO2011027656A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
KR101988341B1 (ko) | 2009-09-04 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
KR101825345B1 (ko) * | 2009-11-28 | 2018-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 적층 산화물 재료, 반도체 장치 및 반도체 장치의 제작 방법 |
KR20210138135A (ko) * | 2009-12-25 | 2021-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US20120319104A1 (en) * | 2010-02-23 | 2012-12-20 | Sharp Kabushiki Kaisha | Method for producing circuit board, circuit board and display device |
US9190522B2 (en) * | 2010-04-02 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor |
WO2011145633A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5948025B2 (ja) | 2010-08-06 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US9960278B2 (en) * | 2011-04-06 | 2018-05-01 | Yuhei Sato | Manufacturing method of semiconductor device |
JP6127296B2 (ja) * | 2015-06-24 | 2017-05-17 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH063544A (ja) * | 1992-06-23 | 1994-01-14 | Japan Steel Works Ltd:The | 光導波路の製造方法 |
JPH11163356A (ja) * | 1997-11-28 | 1999-06-18 | Hitachi Ltd | 薄膜トランジスタおよびその製造方法 |
JP2001168061A (ja) * | 1999-09-27 | 2001-06-22 | Toshiba Corp | レーザ照射により半導体基板上に成膜を形成するためのターゲット及びその製造方法 |
JP4510342B2 (ja) * | 2001-09-10 | 2010-07-21 | シャープ株式会社 | 酸化物絶縁体材料およびその形成方法並びに半導体素子 |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
CN1764551A (zh) * | 2003-03-27 | 2006-04-26 | 纳幕尔杜邦公司 | 转移热敏材料到衬底的方法和施主元件 |
US20070178710A1 (en) * | 2003-08-18 | 2007-08-02 | 3M Innovative Properties Company | Method for sealing thin film transistors |
JP2005268196A (ja) * | 2004-03-21 | 2005-09-29 | Japan Fine Ceramics Center | 酸化亜鉛多結晶膜及びこれを用いた機能素子 |
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2007
- 2007-08-22 JP JP2007215514A patent/JP5216276B2/ja not_active Expired - Fee Related
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