JP2008077768A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP2008077768A
JP2008077768A JP2006256180A JP2006256180A JP2008077768A JP 2008077768 A JP2008077768 A JP 2008077768A JP 2006256180 A JP2006256180 A JP 2006256180A JP 2006256180 A JP2006256180 A JP 2006256180A JP 2008077768 A JP2008077768 A JP 2008077768A
Authority
JP
Japan
Prior art keywords
write
read
memory device
semiconductor memory
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006256180A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008077768A5 (enExample
Inventor
Norihiko Sumiya
範彦 角谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2006256180A priority Critical patent/JP2008077768A/ja
Priority to US11/898,543 priority patent/US7583543B2/en
Priority to CNA2007101535780A priority patent/CN101149970A/zh
Publication of JP2008077768A publication Critical patent/JP2008077768A/ja
Priority to US12/535,212 priority patent/US7974126B2/en
Publication of JP2008077768A5 publication Critical patent/JP2008077768A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP2006256180A 2006-09-21 2006-09-21 半導体記憶装置 Pending JP2008077768A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006256180A JP2008077768A (ja) 2006-09-21 2006-09-21 半導体記憶装置
US11/898,543 US7583543B2 (en) 2006-09-21 2007-09-13 Semiconductor memory device including write selectors
CNA2007101535780A CN101149970A (zh) 2006-09-21 2007-09-21 半导体存储器件
US12/535,212 US7974126B2 (en) 2006-09-21 2009-08-04 Semiconductor memory device including write selectors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006256180A JP2008077768A (ja) 2006-09-21 2006-09-21 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2008077768A true JP2008077768A (ja) 2008-04-03
JP2008077768A5 JP2008077768A5 (enExample) 2009-09-17

Family

ID=39224767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006256180A Pending JP2008077768A (ja) 2006-09-21 2006-09-21 半導体記憶装置

Country Status (3)

Country Link
US (2) US7583543B2 (enExample)
JP (1) JP2008077768A (enExample)
CN (1) CN101149970A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008198242A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 半導体記憶装置
CN101727972B (zh) * 2008-10-13 2012-10-10 联发科技股份有限公司 静态随机存取存储器装置及其存取方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008077768A (ja) * 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7864600B2 (en) * 2008-06-19 2011-01-04 Texas Instruments Incorporated Memory cell employing reduced voltage
US8619477B2 (en) * 2010-07-20 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Two-port SRAM write tracking scheme

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005275382A (ja) * 2004-02-25 2005-10-06 Hitachi Displays Ltd 表示装置
WO2008032549A1 (fr) * 2006-09-13 2008-03-20 Nec Corporation Dispositif de stockage semiconducteur
JP2008198242A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3698929B2 (ja) 1999-09-22 2005-09-21 日本電気株式会社 半導体記憶装置
KR100419992B1 (ko) * 2002-01-12 2004-02-26 삼성전자주식회사 유니-트랜지스터 랜덤 액세스 메모리 장치 및 그것의읽기, 쓰기 그리고 리프레쉬 방법
JP4005535B2 (ja) * 2003-07-02 2007-11-07 松下電器産業株式会社 半導体記憶装置
JP2005056452A (ja) * 2003-08-04 2005-03-03 Hitachi Ltd メモリ及び半導体装置
JP2008077768A (ja) * 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005275382A (ja) * 2004-02-25 2005-10-06 Hitachi Displays Ltd 表示装置
WO2008032549A1 (fr) * 2006-09-13 2008-03-20 Nec Corporation Dispositif de stockage semiconducteur
JP2008198242A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008198242A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 半導体記憶装置
CN101727972B (zh) * 2008-10-13 2012-10-10 联发科技股份有限公司 静态随机存取存储器装置及其存取方法

Also Published As

Publication number Publication date
US20080074932A1 (en) 2008-03-27
US7583543B2 (en) 2009-09-01
US7974126B2 (en) 2011-07-05
CN101149970A (zh) 2008-03-26
US20090290438A1 (en) 2009-11-26

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