CN101149970A - 半导体存储器件 - Google Patents

半导体存储器件 Download PDF

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Publication number
CN101149970A
CN101149970A CNA2007101535780A CN200710153578A CN101149970A CN 101149970 A CN101149970 A CN 101149970A CN A2007101535780 A CNA2007101535780 A CN A2007101535780A CN 200710153578 A CN200710153578 A CN 200710153578A CN 101149970 A CN101149970 A CN 101149970A
Authority
CN
China
Prior art keywords
write
storage unit
bit line
mentioned
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007101535780A
Other languages
English (en)
Chinese (zh)
Inventor
角谷范彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101149970A publication Critical patent/CN101149970A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
CNA2007101535780A 2006-09-21 2007-09-21 半导体存储器件 Pending CN101149970A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP256180/2006 2006-09-21
JP2006256180A JP2008077768A (ja) 2006-09-21 2006-09-21 半導体記憶装置

Publications (1)

Publication Number Publication Date
CN101149970A true CN101149970A (zh) 2008-03-26

Family

ID=39224767

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101535780A Pending CN101149970A (zh) 2006-09-21 2007-09-21 半导体存储器件

Country Status (3)

Country Link
US (2) US7583543B2 (enExample)
JP (1) JP2008077768A (enExample)
CN (1) CN101149970A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102339640A (zh) * 2010-07-20 2012-02-01 台湾积体电路制造股份有限公司 静态随机存取存储器以及静态随机存取存储器方法
CN102820053A (zh) * 2008-10-13 2012-12-12 联发科技股份有限公司 静态随机存取存储器装置及其存取方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008077768A (ja) * 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2008198242A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 半導体記憶装置
US7864600B2 (en) * 2008-06-19 2011-01-04 Texas Instruments Incorporated Memory cell employing reduced voltage

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3698929B2 (ja) 1999-09-22 2005-09-21 日本電気株式会社 半導体記憶装置
KR100419992B1 (ko) * 2002-01-12 2004-02-26 삼성전자주식회사 유니-트랜지스터 랜덤 액세스 메모리 장치 및 그것의읽기, 쓰기 그리고 리프레쉬 방법
JP4005535B2 (ja) * 2003-07-02 2007-11-07 松下電器産業株式会社 半導体記憶装置
JP2005056452A (ja) * 2003-08-04 2005-03-03 Hitachi Ltd メモリ及び半導体装置
JP4964421B2 (ja) * 2004-02-25 2012-06-27 株式会社ジャパンディスプレイイースト 表示装置
WO2008032549A1 (fr) * 2006-09-13 2008-03-20 Nec Corporation Dispositif de stockage semiconducteur
JP2008077768A (ja) * 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2008198242A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 半導体記憶装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102820053A (zh) * 2008-10-13 2012-12-12 联发科技股份有限公司 静态随机存取存储器装置及其存取方法
CN102820053B (zh) * 2008-10-13 2015-09-30 联发科技股份有限公司 静态随机存取存储器装置及其存取方法
CN102339640A (zh) * 2010-07-20 2012-02-01 台湾积体电路制造股份有限公司 静态随机存取存储器以及静态随机存取存储器方法
CN102339640B (zh) * 2010-07-20 2014-02-19 台湾积体电路制造股份有限公司 静态随机存取存储器以及静态随机存取存储器方法

Also Published As

Publication number Publication date
US20080074932A1 (en) 2008-03-27
US7583543B2 (en) 2009-09-01
US7974126B2 (en) 2011-07-05
JP2008077768A (ja) 2008-04-03
US20090290438A1 (en) 2009-11-26

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20080326