JP2008077768A5 - - Google Patents

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Publication number
JP2008077768A5
JP2008077768A5 JP2006256180A JP2006256180A JP2008077768A5 JP 2008077768 A5 JP2008077768 A5 JP 2008077768A5 JP 2006256180 A JP2006256180 A JP 2006256180A JP 2006256180 A JP2006256180 A JP 2006256180A JP 2008077768 A5 JP2008077768 A5 JP 2008077768A5
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
bit line
read bit
selector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006256180A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008077768A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006256180A priority Critical patent/JP2008077768A/ja
Priority claimed from JP2006256180A external-priority patent/JP2008077768A/ja
Priority to US11/898,543 priority patent/US7583543B2/en
Priority to CNA2007101535780A priority patent/CN101149970A/zh
Publication of JP2008077768A publication Critical patent/JP2008077768A/ja
Priority to US12/535,212 priority patent/US7974126B2/en
Publication of JP2008077768A5 publication Critical patent/JP2008077768A5/ja
Pending legal-status Critical Current

Links

JP2006256180A 2006-09-21 2006-09-21 半導体記憶装置 Pending JP2008077768A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006256180A JP2008077768A (ja) 2006-09-21 2006-09-21 半導体記憶装置
US11/898,543 US7583543B2 (en) 2006-09-21 2007-09-13 Semiconductor memory device including write selectors
CNA2007101535780A CN101149970A (zh) 2006-09-21 2007-09-21 半导体存储器件
US12/535,212 US7974126B2 (en) 2006-09-21 2009-08-04 Semiconductor memory device including write selectors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006256180A JP2008077768A (ja) 2006-09-21 2006-09-21 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2008077768A JP2008077768A (ja) 2008-04-03
JP2008077768A5 true JP2008077768A5 (enExample) 2009-09-17

Family

ID=39224767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006256180A Pending JP2008077768A (ja) 2006-09-21 2006-09-21 半導体記憶装置

Country Status (3)

Country Link
US (2) US7583543B2 (enExample)
JP (1) JP2008077768A (enExample)
CN (1) CN101149970A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008077768A (ja) * 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2008198242A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 半導体記憶装置
US7864600B2 (en) * 2008-06-19 2011-01-04 Texas Instruments Incorporated Memory cell employing reduced voltage
US7835175B2 (en) * 2008-10-13 2010-11-16 Mediatek Inc. Static random access memories and access methods thereof
US8619477B2 (en) * 2010-07-20 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Two-port SRAM write tracking scheme

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3698929B2 (ja) 1999-09-22 2005-09-21 日本電気株式会社 半導体記憶装置
KR100419992B1 (ko) * 2002-01-12 2004-02-26 삼성전자주식회사 유니-트랜지스터 랜덤 액세스 메모리 장치 및 그것의읽기, 쓰기 그리고 리프레쉬 방법
JP4005535B2 (ja) * 2003-07-02 2007-11-07 松下電器産業株式会社 半導体記憶装置
JP2005056452A (ja) * 2003-08-04 2005-03-03 Hitachi Ltd メモリ及び半導体装置
JP4964421B2 (ja) * 2004-02-25 2012-06-27 株式会社ジャパンディスプレイイースト 表示装置
WO2008032549A1 (fr) * 2006-09-13 2008-03-20 Nec Corporation Dispositif de stockage semiconducteur
JP2008077768A (ja) * 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2008198242A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 半導体記憶装置

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