JP2008066680A5 - - Google Patents

Download PDF

Info

Publication number
JP2008066680A5
JP2008066680A5 JP2006246176A JP2006246176A JP2008066680A5 JP 2008066680 A5 JP2008066680 A5 JP 2008066680A5 JP 2006246176 A JP2006246176 A JP 2006246176A JP 2006246176 A JP2006246176 A JP 2006246176A JP 2008066680 A5 JP2008066680 A5 JP 2008066680A5
Authority
JP
Japan
Prior art keywords
film
barrier film
copper
forming
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006246176A
Other languages
English (en)
Japanese (ja)
Other versions
JP5214125B2 (ja
JP2008066680A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006246176A priority Critical patent/JP5214125B2/ja
Priority claimed from JP2006246176A external-priority patent/JP5214125B2/ja
Publication of JP2008066680A publication Critical patent/JP2008066680A/ja
Publication of JP2008066680A5 publication Critical patent/JP2008066680A5/ja
Application granted granted Critical
Publication of JP5214125B2 publication Critical patent/JP5214125B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006246176A 2006-09-11 2006-09-11 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 Expired - Fee Related JP5214125B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006246176A JP5214125B2 (ja) 2006-09-11 2006-09-11 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006246176A JP5214125B2 (ja) 2006-09-11 2006-09-11 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法

Publications (3)

Publication Number Publication Date
JP2008066680A JP2008066680A (ja) 2008-03-21
JP2008066680A5 true JP2008066680A5 (enrdf_load_stackoverflow) 2009-10-15
JP5214125B2 JP5214125B2 (ja) 2013-06-19

Family

ID=39289074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006246176A Expired - Fee Related JP5214125B2 (ja) 2006-09-11 2006-09-11 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法

Country Status (1)

Country Link
JP (1) JP5214125B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3227353B2 (ja) * 1995-07-13 2001-11-12 東芝セラミックス株式会社 炭化珪素膜被覆部材及びその製造方法
KR20070049278A (ko) * 2005-11-08 2007-05-11 삼성전자주식회사 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법
JP5412026B2 (ja) * 2006-09-11 2014-02-12 三星ディスプレイ株式會社 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法
US8105937B2 (en) * 2008-08-13 2012-01-31 International Business Machines Corporation Conformal adhesion promoter liner for metal interconnects
US9715845B2 (en) * 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
CN102598278B (zh) * 2009-10-09 2015-04-08 株式会社半导体能源研究所 半导体器件
US8736793B2 (en) 2010-02-24 2014-05-27 Sharp Kabushiki Kaisha Liquid crystal display panel, and liquid crystal display device
JP2011258871A (ja) * 2010-06-11 2011-12-22 Fujitsu Ltd 回路基板及びその製造方法
KR101975263B1 (ko) * 2012-02-07 2019-05-08 삼성디스플레이 주식회사 박막트랜지스터 표시판과 이를 제조하는 방법
US9166054B2 (en) * 2012-04-13 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2606548B2 (ja) * 1993-04-27 1997-05-07 日本電気株式会社 Ｃｕ配線およびその形成方法
JPH10133597A (ja) * 1996-07-26 1998-05-22 Canon Inc 配線基板、該配線基板の製造方法、該配線基板を備えた液晶素子及び該液晶素子の製造方法
US6111619A (en) * 1999-05-27 2000-08-29 Sharp Laboratories Of America, Inc. Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array
TW451447B (en) * 1999-12-31 2001-08-21 Samsung Electronics Co Ltd Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
KR20070049278A (ko) * 2005-11-08 2007-05-11 삼성전자주식회사 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법
JP5412026B2 (ja) * 2006-09-11 2014-02-12 三星ディスプレイ株式會社 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法

Similar Documents

Publication Publication Date Title
JP2008066680A5 (enrdf_load_stackoverflow)
CN108461531B (zh) 柔性阵列基板及其制备方法和柔性显示面板
CN102651401B (zh) 一种薄膜晶体管、阵列基板及其制造方法和显示器件
JP2008066678A5 (enrdf_load_stackoverflow)
EP1933385A3 (en) Thin film transistor, thin film transistor substrate, and method of manufacturing the same
TWI456663B (zh) 顯示裝置之製造方法
JP2007027735A5 (enrdf_load_stackoverflow)
CN104600083B (zh) 薄膜晶体管阵列基板及其制备方法、显示面板和显示装置
GB2433836B (en) Method for fabricating thin film transistor substrate
TW200616231A (en) Thin film transistor array panel and manufacturing method thereof
JP2017520914A (ja) 薄膜トランジスタおよびその製造方法、アレイ基板、並びに表示装置
CN104900533B (zh) 薄膜晶体管、阵列基板、制备方法、显示面板和显示装置
CN104851910A (zh) 薄膜晶体管、阵列基板、制备方法、显示面板和显示装置
CN103745954B (zh) 显示装置、阵列基板及其制造方法
CN102903674B (zh) 显示面板及其制作方法
TW200721384A (en) Manufacturing of thin film transistor array panel
TW200631183A (en) Thin film transistor array panel and manufacturing method thereof
CN105374827B (zh) 显示设备和用于制造该显示设备的方法
CN111244110B (zh) 一种显示面板以及电子装置
JP2008058966A5 (enrdf_load_stackoverflow)
JP2006253395A5 (enrdf_load_stackoverflow)
JP2008004841A5 (enrdf_load_stackoverflow)
JP2008098642A5 (enrdf_load_stackoverflow)
WO2016026176A1 (zh) Tft基板的制作方法及其结构
WO2021035931A1 (zh) 阵列基板、阵列基板的制备方法和显示面板