JP2008065968A5 - - Google Patents

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Publication number
JP2008065968A5
JP2008065968A5 JP2007125798A JP2007125798A JP2008065968A5 JP 2008065968 A5 JP2008065968 A5 JP 2008065968A5 JP 2007125798 A JP2007125798 A JP 2007125798A JP 2007125798 A JP2007125798 A JP 2007125798A JP 2008065968 A5 JP2008065968 A5 JP 2008065968A5
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JP
Japan
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JP2007125798A
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JP5158624B2 (ja
JP2008065968A (ja
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Priority claimed from JP2007125798A external-priority patent/JP5158624B2/ja
Priority to JP2007125798A priority Critical patent/JP5158624B2/ja
Priority to US11/889,145 priority patent/US7602654B2/en
Priority to KR1020070080206A priority patent/KR101372671B1/ko
Priority to CN2007101423145A priority patent/CN101178930B/zh
Publication of JP2008065968A publication Critical patent/JP2008065968A/ja
Priority to US12/555,447 priority patent/US7876625B2/en
Publication of JP2008065968A5 publication Critical patent/JP2008065968A5/ja
Priority to US12/909,465 priority patent/US8018785B2/en
Priority to US13/193,258 priority patent/US8310883B2/en
Publication of JP5158624B2 publication Critical patent/JP5158624B2/ja
Application granted granted Critical
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JP2007125798A 2006-08-10 2007-05-10 半導体記憶装置 Active JP5158624B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2007125798A JP5158624B2 (ja) 2006-08-10 2007-05-10 半導体記憶装置
US11/889,145 US7602654B2 (en) 2006-08-10 2007-08-09 Semiconductor memory device comprising a plurality of static memory cells
KR1020070080206A KR101372671B1 (ko) 2006-08-10 2007-08-09 스태틱형 메모리 셀을 포함한 반도체 기억 장치
CN2007101423145A CN101178930B (zh) 2006-08-10 2007-08-10 具备静态型存储单元的半导体存储装置
US12/555,447 US7876625B2 (en) 2006-08-10 2009-09-08 Semiconductor memory device comprising a plurality of static memory cells
US12/909,465 US8018785B2 (en) 2006-08-10 2010-10-21 Semiconductor memory device comprising a plurality of static memory cells
US13/193,258 US8310883B2 (en) 2006-08-10 2011-07-28 Semiconductor memory device comprising a plurality of static memory cells

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006218514 2006-08-10
JP2006218514 2006-08-10
JP2007125798A JP5158624B2 (ja) 2006-08-10 2007-05-10 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2008065968A JP2008065968A (ja) 2008-03-21
JP2008065968A5 true JP2008065968A5 (ja) 2010-04-15
JP5158624B2 JP5158624B2 (ja) 2013-03-06

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Family Applications (1)

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JP2007125798A Active JP5158624B2 (ja) 2006-08-10 2007-05-10 半導体記憶装置

Country Status (4)

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US (4) US7602654B2 (ja)
JP (1) JP5158624B2 (ja)
KR (1) KR101372671B1 (ja)
CN (1) CN101178930B (ja)

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CN102915761B (zh) * 2012-10-31 2016-01-20 苏州大学 一种应用于存储单元的延时控制电路以及静态随机存储器
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US8982651B2 (en) 2013-03-28 2015-03-17 Stmicroelectronics International N.V. Memory with an assist determination controller and associated methods
JP2015027198A (ja) * 2013-07-26 2015-02-05 株式会社東芝 半導体集積回路および電源管理システム
JP6224401B2 (ja) * 2013-10-04 2017-11-01 ルネサスエレクトロニクス株式会社 半導体メモリ
JP6424448B2 (ja) * 2014-03-28 2018-11-21 株式会社ソシオネクスト 半導体記憶装置
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JP6193187B2 (ja) * 2014-07-31 2017-09-06 株式会社東芝 半導体装置
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US9515077B1 (en) * 2015-12-18 2016-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Layout of static random access memory cell
JP6807725B2 (ja) * 2015-12-22 2021-01-06 株式会社半導体エネルギー研究所 半導体装置、表示パネル、及び電子機器
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CN108039188A (zh) * 2017-12-07 2018-05-15 中国科学院微电子研究所 一种非易失三维存储器的控制电路
CN109298744B (zh) * 2018-09-26 2020-04-21 四川英杰电气股份有限公司 基于电压限制和电流叠层限制控制还原电源的方法及装置
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CN112861297B (zh) * 2019-11-12 2022-05-17 长鑫存储技术有限公司 Mos晶体管特征提取方法、装置、介质及电子设备
CN113470710B (zh) 2020-03-31 2024-03-26 长鑫存储技术有限公司 半导体存储器
CN111508540B (zh) * 2020-04-26 2023-09-15 上海华力集成电路制造有限公司 一种sram读写结构及其测试方法
JP7453135B2 (ja) * 2020-12-22 2024-03-19 ルネサスエレクトロニクス株式会社 半導体装置

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