JP5158624B2
(ja)
|
2006-08-10 |
2013-03-06 |
ルネサスエレクトロニクス株式会社 |
半導体記憶装置
|
US7881126B2
(en)
*
|
2007-05-31 |
2011-02-01 |
Marvell World Trade Ltd. |
Memory structure with word line buffers
|
JP5362198B2
(ja)
|
2007-08-31 |
2013-12-11 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
US20090086554A1
(en)
*
|
2007-09-28 |
2009-04-02 |
Christophe Chanussot |
System and Method for Operating a Semiconductor Memory
|
JP2009123292A
(ja)
*
|
2007-11-15 |
2009-06-04 |
Toshiba Corp |
半導体記憶装置
|
TW200929211A
(en)
*
|
2007-12-17 |
2009-07-01 |
Etron Technology Inc |
Method of reducing current of memory in self-refreshing mode
|
US8189376B2
(en)
*
|
2008-02-08 |
2012-05-29 |
Micron Technology, Inc. |
Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
|
US7692975B2
(en)
|
2008-05-09 |
2010-04-06 |
Micron Technology, Inc. |
System and method for mitigating reverse bias leakage
|
JP2009272587A
(ja)
*
|
2008-05-12 |
2009-11-19 |
Toshiba Corp |
半導体記憶装置
|
KR101505554B1
(ko)
|
2008-09-08 |
2015-03-25 |
삼성전자주식회사 |
반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법
|
WO2010076833A1
(en)
*
|
2008-12-31 |
2010-07-08 |
Fabio Pellizzer |
Word-line driver including pull-up resistor and pull-down transistor
|
JP2010231853A
(ja)
*
|
2009-03-27 |
2010-10-14 |
Renesas Electronics Corp |
半導体装置
|
JP2011018420A
(ja)
*
|
2009-07-10 |
2011-01-27 |
Toshiba Corp |
半導体記憶装置およびワード線電位の制御方法
|
JP2011054255A
(ja)
|
2009-09-04 |
2011-03-17 |
Panasonic Corp |
半導体集積回路
|
US8296698B2
(en)
*
|
2010-02-25 |
2012-10-23 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
High-speed SRAM
|
US8159899B2
(en)
*
|
2010-05-13 |
2012-04-17 |
Micron Technology, Inc. |
Wordline driver for memory
|
KR101809105B1
(ko)
*
|
2010-08-06 |
2017-12-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 집적 회로
|
US8228713B2
(en)
|
2010-09-28 |
2012-07-24 |
International Business Machines Corporation |
SRAM having wordline up-level voltage adjustable to assist bitcell stability and design structure for same
|
US8582351B2
(en)
|
2010-09-28 |
2013-11-12 |
International Business Machines Corporation |
Methods and systems for adjusting wordline up-level voltage to improve production yield relative to SRAM-cell stability
|
US8659958B2
(en)
*
|
2011-06-22 |
2014-02-25 |
Mediatek Inc. |
Memory device and related control method
|
CN103250239A
(zh)
*
|
2011-10-18 |
2013-08-14 |
新加坡优尼山帝斯电子私人有限公司 |
半导体器件
|
US8754481B2
(en)
|
2011-10-18 |
2014-06-17 |
Unisantis Electronics Singapore Pte. Ltd. |
Semiconductor device
|
CN102623509A
(zh)
*
|
2012-04-19 |
2012-08-01 |
成都芯源系统有限公司 |
高压开关器件及其制作方法
|
KR20140000010A
(ko)
|
2012-06-22 |
2014-01-02 |
삼성전자주식회사 |
반도체 메모리 장치
|
JP2014086112A
(ja)
*
|
2012-10-24 |
2014-05-12 |
Fujitsu Semiconductor Ltd |
半導体記憶装置
|
CN102915761B
(zh)
*
|
2012-10-31 |
2016-01-20 |
苏州大学 |
一种应用于存储单元的延时控制电路以及静态随机存储器
|
US9019751B2
(en)
*
|
2013-03-01 |
2015-04-28 |
Qualcomm Incorporated |
Process tolerant circuits
|
US8982651B2
(en)
|
2013-03-28 |
2015-03-17 |
Stmicroelectronics International N.V. |
Memory with an assist determination controller and associated methods
|
JP2015027198A
(ja)
*
|
2013-07-26 |
2015-02-05 |
株式会社東芝 |
半導体集積回路および電源管理システム
|
JP6224401B2
(ja)
*
|
2013-10-04 |
2017-11-01 |
ルネサスエレクトロニクス株式会社 |
半導体メモリ
|
JP6424448B2
(ja)
*
|
2014-03-28 |
2018-11-21 |
株式会社ソシオネクスト |
半導体記憶装置
|
GB2527363B
(en)
|
2014-06-20 |
2019-06-19 |
Advanced Risc Mach Ltd |
Read assist techniques in a memory device
|
JP6193187B2
(ja)
*
|
2014-07-31 |
2017-09-06 |
株式会社東芝 |
半導体装置
|
US9455023B1
(en)
*
|
2015-10-14 |
2016-09-27 |
Oracle International Corporation |
Wordline under-driving using a virtual power network
|
US9515077B1
(en)
*
|
2015-12-18 |
2016-12-06 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Layout of static random access memory cell
|
JP6807725B2
(ja)
*
|
2015-12-22 |
2021-01-06 |
株式会社半導体エネルギー研究所 |
半導体装置、表示パネル、及び電子機器
|
JP6995481B2
(ja)
|
2016-01-29 |
2022-02-04 |
株式会社半導体エネルギー研究所 |
ソースドライバ
|
US9704600B1
(en)
*
|
2016-02-18 |
2017-07-11 |
Global Foundries Inc. |
Method, apparatus, and system for global healing of write-limited die through bias temperature instability
|
KR102463921B1
(ko)
*
|
2016-02-19 |
2022-11-07 |
에스케이하이닉스 주식회사 |
넓은 동작 영역을 갖는 불휘발성 메모리 소자
|
US9928898B2
(en)
*
|
2016-03-30 |
2018-03-27 |
Qualcomm Incorporated |
Wordline adjustment scheme
|
US10490116B2
(en)
|
2016-07-06 |
2019-11-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, memory device, and display system
|
US9786345B1
(en)
*
|
2016-09-16 |
2017-10-10 |
Micron Technology, Inc. |
Compensation for threshold voltage variation of memory cell components
|
US9786363B1
(en)
|
2016-11-01 |
2017-10-10 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Word-line enable pulse generator, SRAM and method for adjusting word-line enable time of SRAM
|
WO2018088297A1
(ja)
*
|
2016-11-14 |
2018-05-17 |
ソニーセミコンダクタソリューションズ株式会社 |
半導体回路および半導体回路システム
|
KR20180065073A
(ko)
*
|
2016-12-06 |
2018-06-18 |
삼성전자주식회사 |
균일한 쓰기 특성을 갖는 에스램 장치
|
US9997236B1
(en)
*
|
2016-12-12 |
2018-06-12 |
Stmicroelectronics International N.V. |
Read assist circuit with process, voltage and temperature tracking for a static random access memory (SRAM)
|
KR102389818B1
(ko)
*
|
2017-09-12 |
2022-04-22 |
삼성전자주식회사 |
어시스트 회로를 포함하는 전압 조절 회로 및 이를 포함하는 메모리 장치
|
CN108039188A
(zh)
*
|
2017-12-07 |
2018-05-15 |
中国科学院微电子研究所 |
一种非易失三维存储器的控制电路
|
CN109298744B
(zh)
*
|
2018-09-26 |
2020-04-21 |
四川英杰电气股份有限公司 |
基于电压限制和电流叠层限制控制还原电源的方法及装置
|
US10910057B2
(en)
*
|
2019-04-22 |
2021-02-02 |
Western Digital Technologies, Inc. |
CAM storage schemes and CAM read operations for detecting matching keys with bit errors
|
CN112861297B
(zh)
*
|
2019-11-12 |
2022-05-17 |
长鑫存储技术有限公司 |
Mos晶体管特征提取方法、装置、介质及电子设备
|
CN113470710B
(zh)
|
2020-03-31 |
2024-03-26 |
长鑫存储技术有限公司 |
半导体存储器
|
CN111508540B
(zh)
*
|
2020-04-26 |
2023-09-15 |
上海华力集成电路制造有限公司 |
一种sram读写结构及其测试方法
|
JP7453135B2
(ja)
*
|
2020-12-22 |
2024-03-19 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|