CN1679111B - 同时向存储矩阵中的多个行进行写入的装置 - Google Patents
同时向存储矩阵中的多个行进行写入的装置 Download PDFInfo
- Publication number
- CN1679111B CN1679111B CN03820748.6A CN03820748A CN1679111B CN 1679111 B CN1679111 B CN 1679111B CN 03820748 A CN03820748 A CN 03820748A CN 1679111 B CN1679111 B CN 1679111B
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- CN
- China
- Prior art keywords
- circuit
- bit line
- row
- unit
- storage unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 23
- 230000008878 coupling Effects 0.000 claims description 22
- 238000010168 coupling process Methods 0.000 claims description 22
- 238000005859 coupling reaction Methods 0.000 claims description 22
- 230000003068 static effect Effects 0.000 claims description 7
- 210000004027 cell Anatomy 0.000 claims description 5
- 210000000352 storage cell Anatomy 0.000 claims description 5
- 230000009467 reduction Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02078590.3 | 2002-09-02 | ||
EP02078590 | 2002-09-02 | ||
PCT/IB2003/003729 WO2004021353A1 (en) | 2002-09-02 | 2003-07-31 | Device writing to a plurality of rows in a memory matrix simultaneously |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1679111A CN1679111A (zh) | 2005-10-05 |
CN1679111B true CN1679111B (zh) | 2011-06-15 |
Family
ID=31970374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03820748.6A Expired - Fee Related CN1679111B (zh) | 2002-09-02 | 2003-07-31 | 同时向存储矩阵中的多个行进行写入的装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7474553B2 (zh) |
EP (1) | EP1537583A1 (zh) |
JP (1) | JP4262678B2 (zh) |
CN (1) | CN1679111B (zh) |
AU (1) | AU2003253205A1 (zh) |
WO (1) | WO2004021353A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE519789T1 (de) * | 2001-06-12 | 2011-08-15 | Basell Polyolefine Gmbh | Verfahren zur polymerisation von buten-1 |
US7167025B1 (en) | 2004-02-14 | 2007-01-23 | Herman Schmit | Non-sequentially configurable IC |
US7425841B2 (en) | 2004-02-14 | 2008-09-16 | Tabula Inc. | Configurable circuits, IC's, and systems |
JP4553185B2 (ja) | 2004-09-15 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US7317331B2 (en) | 2004-11-08 | 2008-01-08 | Tabula, Inc. | Reconfigurable IC that has sections running at different reconfiguration rates |
US7330050B2 (en) | 2004-11-08 | 2008-02-12 | Tabula, Inc. | Storage elements for a configurable IC and method and apparatus for accessing data stored in the storage elements |
US7230869B1 (en) | 2005-03-15 | 2007-06-12 | Jason Redgrave | Method and apparatus for accessing contents of memory cells |
US7272031B1 (en) * | 2005-03-15 | 2007-09-18 | Tabula, Inc. | Method and apparatus for reduced power cell |
US7669097B1 (en) | 2006-03-27 | 2010-02-23 | Tabula, Inc. | Configurable IC with error detection and correction circuitry |
JP5158624B2 (ja) * | 2006-08-10 | 2013-03-06 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US8112468B1 (en) | 2007-03-22 | 2012-02-07 | Tabula, Inc. | Method and apparatus for performing an operation with a plurality of sub-operations in a configurable IC |
EP2201569A4 (en) | 2007-09-06 | 2011-07-13 | Tabula Inc | CONFIGURATION CONTEXT SWITCH |
US8238173B2 (en) * | 2009-07-16 | 2012-08-07 | Zikbit Ltd | Using storage cells to perform computation |
US9076527B2 (en) * | 2009-07-16 | 2015-07-07 | Mikamonu Group Ltd. | Charge sharing in a TCAM array |
CN101714401B (zh) * | 2009-11-06 | 2013-01-02 | 东南大学 | 用以增强存储单元阵列容量和密度的亚阈值敏感放大电路 |
KR20130136343A (ko) * | 2012-06-04 | 2013-12-12 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 동작 방법 |
CN104578015A (zh) * | 2013-10-17 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 抑制高压瞬态电流的位线电路 |
JP2014139860A (ja) * | 2014-03-28 | 2014-07-31 | Renesas Electronics Corp | 半導体集積回路装置 |
EP3633678A4 (en) * | 2017-06-23 | 2020-04-29 | Huawei Technologies Co. Ltd. | STORAGE AND DATA WRITING |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5657264A (en) * | 1990-09-26 | 1997-08-12 | Hitachi, Ltd. | Semiconductor memory |
US6067256A (en) * | 1998-04-01 | 2000-05-23 | Mitsubishi Denki Kabushiki Kaisha | Static semiconductor memory device operating at high speed under lower power supply voltage |
US6212116B1 (en) * | 1999-03-16 | 2001-04-03 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US6366512B1 (en) * | 2000-11-30 | 2002-04-02 | Global Unichip Corporation | Error write protection circuit used in semiconductor memory device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4890263A (en) * | 1988-05-31 | 1989-12-26 | Dallas Semiconductor Corporation | RAM with capability for rapid clearing of data from memory by simultaneously selecting all row lines |
US6275415B1 (en) * | 1999-10-12 | 2001-08-14 | Advanced Micro Devices, Inc. | Multiple byte channel hot electron programming using ramped gate and source bias voltage |
JP2003016785A (ja) * | 2001-06-28 | 2003-01-17 | Sharp Corp | 半導体記憶装置およびそれを用いた情報機器 |
JP4007823B2 (ja) * | 2002-02-21 | 2007-11-14 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP4162076B2 (ja) * | 2002-05-30 | 2008-10-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
-
2003
- 2003-07-31 WO PCT/IB2003/003729 patent/WO2004021353A1/en active Application Filing
- 2003-07-31 AU AU2003253205A patent/AU2003253205A1/en not_active Abandoned
- 2003-07-31 CN CN03820748.6A patent/CN1679111B/zh not_active Expired - Fee Related
- 2003-07-31 JP JP2004532414A patent/JP4262678B2/ja not_active Expired - Fee Related
- 2003-07-31 US US10/525,662 patent/US7474553B2/en not_active Expired - Lifetime
- 2003-07-31 EP EP03791128A patent/EP1537583A1/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5657264A (en) * | 1990-09-26 | 1997-08-12 | Hitachi, Ltd. | Semiconductor memory |
US6067256A (en) * | 1998-04-01 | 2000-05-23 | Mitsubishi Denki Kabushiki Kaisha | Static semiconductor memory device operating at high speed under lower power supply voltage |
US6212116B1 (en) * | 1999-03-16 | 2001-04-03 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US6366512B1 (en) * | 2000-11-30 | 2002-04-02 | Global Unichip Corporation | Error write protection circuit used in semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
EP1537583A1 (en) | 2005-06-08 |
CN1679111A (zh) | 2005-10-05 |
WO2004021353A1 (en) | 2004-03-11 |
US20050254315A1 (en) | 2005-11-17 |
US7474553B2 (en) | 2009-01-06 |
JP2005537602A (ja) | 2005-12-08 |
AU2003253205A1 (en) | 2004-03-19 |
JP4262678B2 (ja) | 2009-05-13 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070907 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070907 Address after: Holland Ian Deho Finn Applicant after: NXP B.V. Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KALAI HANXILE CO., LTD. Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20120207 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120207 Address after: American Delaware Patentee after: Callehan Tiele Co.,Ltd. Address before: Holland Ian Deho Finn Patentee before: NXP B.V. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110615 |
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CF01 | Termination of patent right due to non-payment of annual fee |