JP2008060545A - 半導体製造装置および半導体製造方法 - Google Patents
半導体製造装置および半導体製造方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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Abstract
【解決手段】本発明の半導体製造装置は、ウェーハwが導入される反応室11と、反応室11にガスを供給するためのガス供給手段12、13と、反応室11よりガスを排出するためのガス排出手段14と、ウェーハwを外周部において保持するためのホルダー16と、ウェーハwを下部より加熱するための第1のヒータ17aと、ホルダー16上方に設けられるリフレクター18bと、リフレクター18bを駆動させるための駆動機構19を備える。
【選択図】図1
Description
H/D≦1/4
を満たしていることが好ましい。H/Dが1/4を超えると、供給されるガスがウェーハwに整流状態で到達することが困難となる。
2/15≦L/D≦7/15
とすることが好ましい。L/Dが2/15未満であると、十分に堆積物の生成を抑えることができず、7/15を超えると、その効果の増加度合いは下がる。むしろ、離間距離Lの増加による装置の大型化に伴う問題が大きくなる。より好ましくは、1/5≦L/D≦2/5である。
Claims (10)
- ウェーハが導入される反応室と、
前記反応室にガスを供給するためのガス供給手段と、
前記反応室より前記ガスを排出するためのガス排出手段と、
前記ウェーハを外周部において保持するためのホルダーと、
前記ウェーハを下部より加熱するための第1のヒータと、
前記ホルダー上方に設けられるリフレクターと、
前記リフレクターを駆動させるための駆動機構を備えることを特徴とする半導体製造装置。 - 前記ウェーハの最外周の温度を検出するための第1の温度測定機構と、
検出された前記最外周の温度に基づき、前記駆動機構を制御するための第1の制御機構を備えることを特徴とする請求項1に記載の半導体製造装置。 - 前記ウェーハの中心部の温度を検出するための第2の温度測定機構と、
検出された前記中心部の温度に基づき、前記第1のヒータを制御するための第2の制御機構を備えることを特徴とする請求項1または請求項2に記載の半導体製造装置。 - 前記ウェーハの周縁部を加熱するための第2のヒータと、
前記ウェーハの周縁部の温度を検出するための第3の温度測定機構と、
検出された前記周縁部の温度に基づき、前記第2のヒータを制御するための第3の制御機構を備えることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体製造装置。 - 前記ウェーハ上方に、ガスを整流状態で前記ウェーハに供給するための整流板を備えることを特徴とする請求項1から請求項4のいずれか1項に記載の半導体製造装置。
- 前記リフレクターは、前記ホルダー上面から1mm〜50mmの範囲で上下に駆動制御されることを特徴とする請求項1から請求項5のいずれか1項に記載の半導体製造装置。
- 前記リフレクターは、SiC系材料、炭素系材料、AlN系材料、SiN系材料の少なくともいずれかを基材とすることを特徴とする請求項1から請求項6のいずれか1項に記載に記載の半導体製造装置。
- 反応室内に設置されたホルダー上に、ウェーハを保持し、
前記ウェーハ上に、プロセスガスを供給し、
前記ウェーハを回転させ、
前記ウェーハを下部より加熱し、
前記ホルダー上方に設置されたリフレクターを駆動させることにより、前記ウェーハ最外周の温度を制御することを特徴とする半導体製造方法。 - 前記ウェーハの最外周の温度を検出し、
検出された最外周の温度に基づき、前記リフレクターを駆動させることを特徴とする請求項8の半導体製造方法。 - 前記ウェーハの中心部または周縁部の温度を検出し、
検出された前記中央部または前記周縁部の温度に基づき、前記ウェーハの加熱温度を制御することを特徴とする請求項8または請求項9に記載の半導体製造方法。
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JP2007183031A JP4262763B2 (ja) | 2006-08-02 | 2007-07-12 | 半導体製造装置および半導体製造方法 |
US11/828,771 US7699604B2 (en) | 2006-08-02 | 2007-07-26 | Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
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JP2007183031A JP4262763B2 (ja) | 2006-08-02 | 2007-07-12 | 半導体製造装置および半導体製造方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009231587A (ja) * | 2008-03-24 | 2009-10-08 | Nuflare Technology Inc | 半導体製造装置および半導体製造方法 |
JP2009260291A (ja) * | 2008-03-24 | 2009-11-05 | Toshiba Corp | エピタキシャルウェーハの製造装置及び製造方法 |
JP2010141060A (ja) * | 2008-12-10 | 2010-06-24 | Sumco Techxiv株式会社 | エピタキシャルウェーハの製造方法 |
JP2012069689A (ja) * | 2010-09-22 | 2012-04-05 | Toshiba Corp | 成膜装置および成膜方法 |
JP2013021113A (ja) * | 2011-07-11 | 2013-01-31 | Nuflare Technology Inc | 気相成長装置および気相成長方法 |
JP2013062376A (ja) * | 2011-09-13 | 2013-04-04 | Toyota Motor Corp | 回転式成膜装置 |
US9758871B2 (en) | 2008-12-10 | 2017-09-12 | Sumco Techxiv Corporation | Method and apparatus for manufacturing epitaxial silicon wafer |
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US20080311294A1 (en) * | 2007-06-15 | 2008-12-18 | Hideki Ito | Vapor-phase growth apparatus and vapor-phase growth method |
JP5271648B2 (ja) * | 2008-09-22 | 2013-08-21 | 株式会社ニューフレアテクノロジー | 半導体製造方法および半導体製造装置 |
JP5341706B2 (ja) * | 2009-10-16 | 2013-11-13 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
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Family Cites Families (6)
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US5965219A (en) * | 1988-12-27 | 1999-10-12 | Symetrix Corporation | Misted deposition method with applied UV radiation |
JP3074312B2 (ja) | 1991-01-10 | 2000-08-07 | 東芝機械株式会社 | 気相成長方法 |
JPH08186081A (ja) * | 1994-12-29 | 1996-07-16 | F T L:Kk | 半導体装置の製造方法及び半導体装置の製造装置 |
JP3437118B2 (ja) * | 1999-04-23 | 2003-08-18 | 東芝機械株式会社 | ウエーハ加熱装置及びその制御方法 |
KR100375985B1 (ko) | 2000-08-17 | 2003-03-15 | 삼성전자주식회사 | 반사부를 구비하는 박막 형성 장치 |
US6660606B2 (en) * | 2000-09-29 | 2003-12-09 | Canon Kabushiki Kaisha | Semiconductor-on-insulator annealing method |
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- 2007-07-12 JP JP2007183031A patent/JP4262763B2/ja not_active Expired - Fee Related
- 2007-07-26 US US11/828,771 patent/US7699604B2/en not_active Expired - Fee Related
Cited By (9)
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JP2009231587A (ja) * | 2008-03-24 | 2009-10-08 | Nuflare Technology Inc | 半導体製造装置および半導体製造方法 |
JP2009260291A (ja) * | 2008-03-24 | 2009-11-05 | Toshiba Corp | エピタキシャルウェーハの製造装置及び製造方法 |
US8591993B2 (en) | 2008-03-24 | 2013-11-26 | Kabushiki Kaisha Toshiba | Epitaxial wafer manufacturing apparatus and manufacturing method |
JP2010141060A (ja) * | 2008-12-10 | 2010-06-24 | Sumco Techxiv株式会社 | エピタキシャルウェーハの製造方法 |
US9758871B2 (en) | 2008-12-10 | 2017-09-12 | Sumco Techxiv Corporation | Method and apparatus for manufacturing epitaxial silicon wafer |
JP2012069689A (ja) * | 2010-09-22 | 2012-04-05 | Toshiba Corp | 成膜装置および成膜方法 |
KR101349480B1 (ko) * | 2010-09-22 | 2014-01-08 | 가부시끼가이샤 도시바 | 성막장치 |
JP2013021113A (ja) * | 2011-07-11 | 2013-01-31 | Nuflare Technology Inc | 気相成長装置および気相成長方法 |
JP2013062376A (ja) * | 2011-09-13 | 2013-04-04 | Toyota Motor Corp | 回転式成膜装置 |
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US20080032036A1 (en) | 2008-02-07 |
US7699604B2 (en) | 2010-04-20 |
JP4262763B2 (ja) | 2009-05-13 |
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LAPS | Cancellation because of no payment of annual fees |