JP2008060446A - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置 Download PDFInfo
- Publication number
- JP2008060446A JP2008060446A JP2006237389A JP2006237389A JP2008060446A JP 2008060446 A JP2008060446 A JP 2008060446A JP 2006237389 A JP2006237389 A JP 2006237389A JP 2006237389 A JP2006237389 A JP 2006237389A JP 2008060446 A JP2008060446 A JP 2008060446A
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- Prior art keywords
- thin film
- film resistor
- conductive member
- film
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010408 film Substances 0.000 claims abstract description 125
- 239000010409 thin film Substances 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 66
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 abstract 3
- 239000011229 interlayer Substances 0.000 description 51
- 239000010410 layer Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000000059 patterning Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910019974 CrSi Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 101150008012 Bcl2l1 gene Proteins 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006237389A JP2008060446A (ja) | 2006-09-01 | 2006-09-01 | 半導体装置の製造方法及び半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006237389A JP2008060446A (ja) | 2006-09-01 | 2006-09-01 | 半導体装置の製造方法及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008060446A true JP2008060446A (ja) | 2008-03-13 |
| JP2008060446A5 JP2008060446A5 (enExample) | 2009-09-24 |
Family
ID=39242809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006237389A Pending JP2008060446A (ja) | 2006-09-01 | 2006-09-01 | 半導体装置の製造方法及び半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008060446A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102655077A (zh) * | 2011-03-03 | 2012-09-05 | 精工电子有限公司 | 半导体装置的制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555520A (ja) * | 1991-08-26 | 1993-03-05 | Sharp Corp | 半導体装置の製造方法 |
| JPH06232351A (ja) * | 1993-01-30 | 1994-08-19 | Sony Corp | ＢｉＣＭＯＳ型半導体装置及びその製造方法 |
| JP2005276887A (ja) * | 2004-03-23 | 2005-10-06 | Ricoh Co Ltd | 半導体装置 |
| JP2007149965A (ja) * | 2005-11-28 | 2007-06-14 | Seiko Npc Corp | 薄膜抵抗素子 |
-
2006
- 2006-09-01 JP JP2006237389A patent/JP2008060446A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555520A (ja) * | 1991-08-26 | 1993-03-05 | Sharp Corp | 半導体装置の製造方法 |
| JPH06232351A (ja) * | 1993-01-30 | 1994-08-19 | Sony Corp | ＢｉＣＭＯＳ型半導体装置及びその製造方法 |
| JP2005276887A (ja) * | 2004-03-23 | 2005-10-06 | Ricoh Co Ltd | 半導体装置 |
| JP2007149965A (ja) * | 2005-11-28 | 2007-06-14 | Seiko Npc Corp | 薄膜抵抗素子 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102655077A (zh) * | 2011-03-03 | 2012-09-05 | 精工电子有限公司 | 半导体装置的制造方法 |
| JP2012186227A (ja) * | 2011-03-03 | 2012-09-27 | Seiko Instruments Inc | 半導体装置の製造方法 |
| KR101910197B1 (ko) * | 2011-03-03 | 2018-10-19 | 에이블릭 가부시키가이샤 | 반도체 장치의 제조 방법 |
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