JP2008058898A - 露光装置、露光方法、及び表示用パネル基板の製造方法 - Google Patents

露光装置、露光方法、及び表示用パネル基板の製造方法 Download PDF

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Publication number
JP2008058898A
JP2008058898A JP2006238867A JP2006238867A JP2008058898A JP 2008058898 A JP2008058898 A JP 2008058898A JP 2006238867 A JP2006238867 A JP 2006238867A JP 2006238867 A JP2006238867 A JP 2006238867A JP 2008058898 A JP2008058898 A JP 2008058898A
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JP
Japan
Prior art keywords
temperature
mask
substrate
chuck
expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006238867A
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English (en)
Japanese (ja)
Inventor
Ryoji Nemoto
亮二 根本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2006238867A priority Critical patent/JP2008058898A/ja
Priority to TW096121154A priority patent/TW200813651A/zh
Priority to KR1020070058664A priority patent/KR20080021484A/ko
Priority to CN2007101234444A priority patent/CN101140425B/zh
Publication of JP2008058898A publication Critical patent/JP2008058898A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006238867A 2006-09-04 2006-09-04 露光装置、露光方法、及び表示用パネル基板の製造方法 Pending JP2008058898A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006238867A JP2008058898A (ja) 2006-09-04 2006-09-04 露光装置、露光方法、及び表示用パネル基板の製造方法
TW096121154A TW200813651A (en) 2006-09-04 2007-06-12 Exposure device, exposure method, and manufacturing method of a panel substrate for display
KR1020070058664A KR20080021484A (ko) 2006-09-04 2007-06-15 노광 장치, 노광 방법 및 표시용 패널 기판의 제조 방법
CN2007101234444A CN101140425B (zh) 2006-09-04 2007-06-22 曝光装置、曝光方法、及显示用面板基板的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006238867A JP2008058898A (ja) 2006-09-04 2006-09-04 露光装置、露光方法、及び表示用パネル基板の製造方法

Publications (1)

Publication Number Publication Date
JP2008058898A true JP2008058898A (ja) 2008-03-13

Family

ID=39192416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006238867A Pending JP2008058898A (ja) 2006-09-04 2006-09-04 露光装置、露光方法、及び表示用パネル基板の製造方法

Country Status (4)

Country Link
JP (1) JP2008058898A (zh)
KR (1) KR20080021484A (zh)
CN (1) CN101140425B (zh)
TW (1) TW200813651A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011085859A (ja) * 2009-10-19 2011-04-28 Murata Mfg Co Ltd 露光装置及び露光方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101276150B (zh) * 2008-03-21 2010-06-02 上海微电子装备有限公司 一种步进重复曝光装置
TWI407268B (zh) * 2010-07-28 2013-09-01 Au Optronics Corp 工作台
TWI553424B (zh) * 2014-11-11 2016-10-11 Beac Co Ltd Exposure device
CN106200275B (zh) * 2016-07-11 2017-12-01 武汉华星光电技术有限公司 曝光方法
CN108121164B (zh) 2016-11-29 2020-12-01 中芯国际集成电路制造(上海)有限公司 光罩散热装置及其工作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04318851A (ja) * 1991-04-18 1992-11-10 Hitachi Electron Eng Co Ltd 基板露光装置
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
JP2006078673A (ja) * 2004-09-08 2006-03-23 Nsk Ltd 近接露光装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276212A (ja) * 1988-09-13 1990-03-15 Canon Inc 多重露光方法
JP3689949B2 (ja) * 1995-12-19 2005-08-31 株式会社ニコン 投影露光装置、及び該投影露光装置を用いたパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04318851A (ja) * 1991-04-18 1992-11-10 Hitachi Electron Eng Co Ltd 基板露光装置
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
JP2006078673A (ja) * 2004-09-08 2006-03-23 Nsk Ltd 近接露光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011085859A (ja) * 2009-10-19 2011-04-28 Murata Mfg Co Ltd 露光装置及び露光方法

Also Published As

Publication number Publication date
KR20080021484A (ko) 2008-03-07
TW200813651A (en) 2008-03-16
CN101140425A (zh) 2008-03-12
CN101140425B (zh) 2011-02-09

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