JP2008058898A - Exposure apparatus, exposure method and method for manufacturing display panel substrate - Google Patents

Exposure apparatus, exposure method and method for manufacturing display panel substrate Download PDF

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JP2008058898A
JP2008058898A JP2006238867A JP2006238867A JP2008058898A JP 2008058898 A JP2008058898 A JP 2008058898A JP 2006238867 A JP2006238867 A JP 2006238867A JP 2006238867 A JP2006238867 A JP 2006238867A JP 2008058898 A JP2008058898 A JP 2008058898A
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temperature
mask
substrate
chuck
expansion
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Ryoji Nemoto
亮二 根本
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to TW096121154A priority patent/TW200813651A/en
Priority to KR1020070058664A priority patent/KR20080021484A/en
Priority to CN2007101234444A priority patent/CN101140425B/en
Publication of JP2008058898A publication Critical patent/JP2008058898A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70681Metrology strategies
    • G03F7/70683Mark designs
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706851Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70791Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092Signal processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Development (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To prevent decrease in printing accuracy of a pattern even when the temperature of a mask changes. <P>SOLUTION: A camera 23 acquires an image of a detection pattern 21 provided on a mask 2 and outputs an image signal. An image signal processor 30 processes the image signal outputted by the camera 23. A main controller 40 detects an expansion or contraction amount of the mask 2 from the processing result of the image signal processor 30 and sets a target temperature of a chuck 10 by a temperature controller 14. A heat exchanger 12 changes the temperature and amount of a secondary heat medium supplied to a heat medium passage 11 to change the temperature of the chuck 10. A temperature sensor 13 detects the temperature of the chuck 10, and the temperature controller 14 controls the heat exchanger 12 so that the temperature of the chuck 10 detected by the temperature sensor 13 reaches the target temperature. The temperature of the substrate 1 is adjusted with high accuracy through the chuck 10 and the substrate 1 is expanded or contracted according to the expansion or contraction of the mask 2. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、液晶ディスプレイ装置等の表示用パネル基板の製造において、プロキシミティ方式により基板の露光を行う露光装置、露光方法、及びそれらを用いた表示用パネル基板の製造方法に関する。   The present invention relates to an exposure apparatus that exposes a substrate by a proximity method, an exposure method, and a method for manufacturing a display panel substrate using the same in manufacturing a display panel substrate such as a liquid crystal display device.

表示用パネルとして用いられる液晶ディスプレイ装置のTFT(Thin Film Transistor)基板やカラーフィルタ基板、プラズマディスプレイパネル用基板、有機EL(Electroluminescence)表示パネル用基板等の製造は、露光装置を用いて、フォトリソグラフィー技術により基板上にパターンを形成して行われる。露光装置としては、レンズ又は鏡を用いてマスクのパターンを基板上に投影するプロジェクション方式と、マスクと基板との間に微小な間隙(プロキシミティギャップ)を設けてマスクのパターンを基板へ転写するプロキシミティ方式とがある。プロキシミティ方式は、プロジェクション方式に比べてパターン解像性能は劣るが、照射光学系の構成が簡単で、かつ処理能力が高く量産用に適している。   Manufacturing of TFT (Thin Film Transistor) substrates, color filter substrates, plasma display panel substrates, organic EL (Electroluminescence) display panel substrates, etc. for liquid crystal display devices used as display panels is performed using an exposure apparatus, and photolithography. This is performed by forming a pattern on the substrate by a technique. As an exposure apparatus, a projection method in which a mask pattern is projected onto a substrate using a lens or a mirror, and a minute gap (proximity gap) is provided between the mask and the substrate to transfer the mask pattern to the substrate. There is a proximity method. The proximity method is inferior in pattern resolution performance to the projection method, but the configuration of the irradiation optical system is simple, the processing capability is high, and it is suitable for mass production.

従来、露光装置おいては、露光光のエネルギーによりマスクの温度が上昇し、マスクの熱膨張によってパターンの焼付け精度が低下するという問題があった。マスクは、一般に、光の透過率が高く熱膨張率が低い石英で作られているが、基板の大型化に伴ってマスクが大型化する程、石英で作られたマスクであっても熱膨張が無視できない大きさとなってきた。   Conventionally, the exposure apparatus has a problem that the mask temperature rises due to the energy of exposure light, and the pattern printing accuracy decreases due to thermal expansion of the mask. The mask is generally made of quartz with a high light transmittance and a low coefficient of thermal expansion. However, as the size of the mask increases with the increase in size of the substrate, even a mask made of quartz has a thermal expansion. Has become a size that cannot be ignored.

特許文献1には、プロジェクション方式の露光装置において、マスクの熱変形量を測定して、投影光学系の結像特性を変化させる技術が開示されている。また、特許文献2には、同じくプロジェクション方式の露光装置において、マスクの熱膨張量を演算により求め、投影パターンの倍率又はディストーションを補正する技術が開示されている。
特開平8−55780号公報 特開平10−163082号公報
Japanese Patent Application Laid-Open No. 2004-133260 discloses a technique for changing the imaging characteristics of a projection optical system by measuring the amount of thermal deformation of a mask in a projection type exposure apparatus. Japanese Patent Application Laid-Open No. 2004-228561 also discloses a technique for correcting the magnification or distortion of a projection pattern by calculating the amount of thermal expansion of a mask by calculation in the same projection type exposure apparatus.
JP-A-8-55780 Japanese Patent Laid-Open No. 10-163082

従来、プロジェクション方式の露光装置においては、特許文献1又は特許文献2に記載の様に、マスクが熱膨張しても、投影光学系を調整することにより、パターンの焼付け精度の低下を防止することが可能であった。   Conventionally, in a projection-type exposure apparatus, as described in Patent Document 1 or Patent Document 2, even if the mask is thermally expanded, a reduction in pattern printing accuracy is prevented by adjusting the projection optical system. Was possible.

これに対し、プロキシミティ方式の露光装置においては、マスクのパターンを基板へ1対1に転写するため、マスクの熱膨張によるパターンの焼付け精度の低下を防止することができなかった。そのため、従来は、マスクの冷却機構を露光装置に設け、マスクの熱膨張をできるだけ抑制するしか対策がなかった。   On the other hand, in the proximity type exposure apparatus, since the mask pattern is transferred to the substrate on a one-to-one basis, it is not possible to prevent deterioration in pattern printing accuracy due to thermal expansion of the mask. Therefore, conventionally, there has been a countermeasure only by providing a mask cooling mechanism in the exposure apparatus to suppress the thermal expansion of the mask as much as possible.

本発明の課題は、プロキシミティ方式の露光装置において、マスクが温度変化により伸縮しても、パターンの焼き付け精度が低下するのを防止することである。また、本発明の課題は、パターンの焼き付け精度が低下するのを防止して、高品質な基板を製造することである。   An object of the present invention is to prevent a pattern printing accuracy from being deteriorated in a proximity type exposure apparatus even if a mask expands or contracts due to a temperature change. Another object of the present invention is to manufacture a high-quality substrate by preventing a reduction in pattern printing accuracy.

本発明の露光装置は、マスクと基板との間に微小なギャップを設けて、マスクのパターンを基板へ転写する露光装置であって、マスクの温度変化による伸縮量を検出する検出手段と、検出手段の検出結果に応じて基板の温度を調節して、マスクの伸縮に合わせて基板を伸縮させる基板温度調節手段とを備えたものである。   An exposure apparatus according to the present invention is an exposure apparatus for transferring a mask pattern to a substrate by providing a minute gap between the mask and the substrate, and detecting means for detecting an expansion / contraction amount due to temperature change of the mask, and detection And a substrate temperature adjusting means for adjusting the temperature of the substrate according to the detection result of the means and expanding and contracting the substrate in accordance with the expansion and contraction of the mask.

また、本発明の露光方法は、マスクと基板との間に微小なギャップを設けて、マスクのパターンを基板へ転写する露光方法であって、マスクの温度変化による伸縮量を検出し、検出結果に応じて基板の温度を調節して、マスクの伸縮に合わせて基板を伸縮させるものである。   The exposure method of the present invention is an exposure method in which a minute gap is provided between the mask and the substrate, and the mask pattern is transferred to the substrate. The amount of expansion and contraction due to the temperature change of the mask is detected, and the detection result Accordingly, the temperature of the substrate is adjusted in accordance with the expansion and contraction of the substrate in accordance with the expansion and contraction of the mask.

マスクが温度変化により伸縮しても、マスクの温度変化による伸縮量を検出し、検出結果に応じて基板の温度を調節して、マスクの伸縮に合わせて基板を伸縮させるので、パターンの焼き付け精度が低下しない。基板の温度に関して、従来、基板を露光用のチャックに搭載する前に基板の温度管理を行ったり、露光用のチャック自体に冷却機構を設けて基板を冷却する技術が知られていたが、これらはいずれも基板の温度変化による熱膨張を抑制するのが目的であった。本発明は、基板の温度を調節して基板を積極的に伸縮させる点が、従来と大きく異なる。   Even if the mask expands and contracts due to temperature changes, the amount of expansion and contraction due to the temperature change of the mask is detected, the substrate temperature is adjusted according to the detection result, and the substrate is expanded and contracted according to the expansion and contraction of the mask. Does not drop. With regard to the temperature of the substrate, conventionally, there have been known techniques for controlling the temperature of the substrate before mounting the substrate on the exposure chuck, or cooling the substrate by providing a cooling mechanism in the exposure chuck itself. The purpose of each is to suppress thermal expansion due to temperature changes of the substrate. The present invention is greatly different from the conventional one in that the temperature of the substrate is adjusted to positively expand and contract the substrate.

さらに、本発明の露光装置は、検出手段が、マスクの複数箇所に設けた検出用パターンの画像を取得して、画像信号を出力する複数の画像取得手段と、画像取得手段が出力した画像信号を処理する画像信号処理装置と、画像信号処理装置の処理結果から各検出用パターンの位置を検出し、各検出用パターンの位置から検出用パターンの間隔を算出し、検出用パターンの間隔からマスクの伸縮量を算出する主制御装置とを有するものである。   Furthermore, in the exposure apparatus of the present invention, the detection means acquires images of detection patterns provided at a plurality of locations on the mask, and outputs a plurality of image acquisition means, and the image signal output by the image acquisition means Detecting the position of each detection pattern from the processing result of the image signal processing apparatus, calculating the interval of the detection pattern from the position of each detection pattern, and masking from the interval of the detection pattern And a main control device for calculating the amount of expansion / contraction of.

また、本発明の露光方法は、マスクの複数箇所に検出用パターンを設け、各検出用パターンの画像を取得し、各検出用パターンの画像信号を処理して、各検出用パターンの位置を検出し、各検出用パターンの位置から検出用パターンの間隔を算出し、検出用パターンの間隔からマスクの伸縮量を算出するものである。   Also, the exposure method of the present invention provides detection patterns at a plurality of locations on the mask, acquires images of each detection pattern, processes the image signal of each detection pattern, and detects the position of each detection pattern. Then, the interval of the detection pattern is calculated from the position of each detection pattern, and the expansion / contraction amount of the mask is calculated from the interval of the detection pattern.

マスクの複数箇所に設けた検出用パターンの画像から、各検出用パターンの位置の検出、検出用パターンの間隔の算出、及びマスクの伸縮量の算出という簡単な処理により、マスクの温度変化による伸縮量が高精度に検出される。   Expansion and contraction due to changes in the temperature of the mask through simple processing of detecting the position of each detection pattern, calculating the interval between detection patterns, and calculating the amount of expansion and contraction of the mask from images of detection patterns provided at multiple locations on the mask The quantity is detected with high accuracy.

さらに、本発明の露光装置は、基板温度調節手段が、基板に接触するチャックと、チャックに設けた熱媒体通路と、熱媒体通路へ熱媒体を供給し、供給する熱媒体の温度及び量を変化させてチャックの温度を変化させる熱交換器と、チャックの温度を検出する温度センサーと、温度センサーで検出したチャックの温度が目標温度となる様に、熱交換器を制御する温度制御装置とを有し、主制御装置が、算出したマスクの伸縮量に基づいてチャックの目標温度を算出して、温度制御装置に目標温度を設定するものである。   Further, in the exposure apparatus of the present invention, the substrate temperature adjusting means supplies the heat medium to the chuck that contacts the substrate, the heat medium passage provided in the chuck, the heat medium passage, and the temperature and amount of the heat medium to be supplied. A heat exchanger that changes the temperature of the chuck by changing the temperature, a temperature sensor that detects the temperature of the chuck, and a temperature control device that controls the heat exchanger so that the chuck temperature detected by the temperature sensor becomes a target temperature The main control device calculates the target temperature of the chuck based on the calculated expansion / contraction amount of the mask, and sets the target temperature in the temperature control device.

また、本発明の露光方法は、基板に接触するチャックに熱媒体通路を設け、チャックに設けた熱媒体通路へ熱媒体を供給し、供給する熱媒体の温度及び量を変化させてチャックの温度を変化させ、算出したマスクの伸縮量に基づいてチャックの目標温度を算出し、チャックの温度を検出し、検出したチャックの温度が目標温度となる様に、チャックに設けた熱媒体通路へ供給する熱媒体の温度及び量を制御するものである。   In the exposure method of the present invention, the heating medium passage is provided in the chuck that contacts the substrate, the heating medium is supplied to the heating medium passage provided in the chuck, and the temperature and amount of the supplied heating medium are changed to change the temperature of the chuck. The target temperature of the chuck is calculated based on the calculated amount of expansion and contraction of the mask, the chuck temperature is detected, and the detected chuck temperature is supplied to the heat medium passage provided in the chuck so as to reach the target temperature. The temperature and amount of the heat medium to be controlled are controlled.

マスクの伸縮量に基づいてチャックの目標温度を算出し、チャックの温度を検出し、検出したチャックの温度が目標温度となる様に、チャックに設けた熱媒体通路へ供給する熱媒体の温度及び量を制御するので、チャックを介して基板の温度が高精度に調節され、マスクの伸縮に合わせて基板が伸縮される。   The target temperature of the chuck is calculated based on the amount of expansion and contraction of the mask, the temperature of the chuck is detected, and the temperature of the heat medium supplied to the heat medium passage provided in the chuck and the detected temperature of the chuck become the target temperature, and Since the amount is controlled, the temperature of the substrate is adjusted with high accuracy through the chuck, and the substrate is expanded and contracted in accordance with the expansion and contraction of the mask.

本発明の表示用パネル基板の製造方法は、上記のいずれかの露光装置又は露光方法を用いて、マスクのパターンを基板へ転写するものである。上記の露光装置又は露光方法を用いることにより、マスクが温度変化により伸縮しても、パターンの焼き付け精度が低下せず、高品質な基板が製造される。   The method for producing a display panel substrate of the present invention is to transfer the mask pattern onto the substrate using any one of the exposure apparatuses or exposure methods described above. By using the above exposure apparatus or exposure method, even if the mask expands and contracts due to temperature changes, the pattern printing accuracy does not decrease, and a high-quality substrate is manufactured.

本発明の露光装置及び露光方法によれば、マスクの温度変化による伸縮量を検出し、検出結果に応じて基板の温度を調節して、マスクの伸縮に合わせて基板を伸縮させることにより、プロキシミティ方式の露光装置において、マスクが温度変化により伸縮しても、パターンの焼き付け精度が低下するのを防止することができる。   According to the exposure apparatus and the exposure method of the present invention, the amount of expansion / contraction due to the temperature change of the mask is detected, the temperature of the substrate is adjusted according to the detection result, and the substrate is expanded / contracted according to the expansion / contraction of the mask. In the Mitty exposure apparatus, even if the mask expands or contracts due to a temperature change, it is possible to prevent the pattern printing accuracy from being lowered.

さらに、本発明の露光装置及び露光方法によれば、マスクの複数箇所に設けた検出用パターンの画像から、各検出用パターンの位置の検出、検出用パターンの間隔の算出、及びマスクの伸縮量の算出という簡単な処理により、マスクの温度変化による伸縮量を高精度に検出することができる。   Furthermore, according to the exposure apparatus and the exposure method of the present invention, detection of the position of each detection pattern, calculation of the interval of the detection pattern, and expansion / contraction amount of the mask from the detection pattern images provided at a plurality of locations on the mask The amount of expansion and contraction due to the temperature change of the mask can be detected with high accuracy by a simple process of calculating.

さらに、本発明の露光装置及び露光方法によれば、マスクの伸縮量に基づいてチャックの目標温度を算出し、チャックの温度を検出し、検出したチャックの温度が目標温度となる様に、チャックに設けた熱媒体通路へ供給する熱媒体の温度及び量を制御することにより、チャックを介して基板の温度を高精度に調節することができ、マスクの伸縮に合わせて基板を伸縮させることができる。   Further, according to the exposure apparatus and the exposure method of the present invention, the chuck target temperature is calculated based on the expansion / contraction amount of the mask, the chuck temperature is detected, and the detected chuck temperature is set to the target temperature. By controlling the temperature and amount of the heat medium supplied to the heat medium passage provided in the substrate, the temperature of the substrate can be adjusted with high accuracy through the chuck, and the substrate can be expanded and contracted in accordance with the expansion and contraction of the mask. it can.

本発明の表示用パネル基板の製造方法によれば、マスクが温度変化により伸縮しても、パターンの焼き付け精度が低下するのを防止することができるので、高品質な基板を製造することができる。   According to the method for manufacturing a display panel substrate of the present invention, even if the mask expands or contracts due to a temperature change, it is possible to prevent the pattern printing accuracy from being lowered, and thus it is possible to manufacture a high-quality substrate. .

図1は、本発明の一実施の形態による露光装置の概略構成を示す図である。露光装置は、ベース3、Xガイド4、Xステージ5、Yガイド6、Yステージ7、θステージ8、Z−チルト機構9、マスク伸縮量検出部、及び基板温度調節機構を含んで構成されている。マスク伸縮量検出部は、レンズ22、カメラ23、画像信号処理装置30、及び主制御装置40を含んで構成され、基板温度調節機構は、チャック10、熱媒体通路11、熱交換器12、温度センサー13、及び温度制御装置14を含んで構成されている。なお、露光装置は、これらの他に、露光光を照射する照射光学系、基板1を搬入する搬入ユニット、基板1を搬出する搬出ユニット、装置内の温度管理を行う温度制御ユニット等を備えている。   FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to an embodiment of the present invention. The exposure apparatus includes a base 3, an X guide 4, an X stage 5, a Y guide 6, a Y stage 7, a θ stage 8, a Z-tilt mechanism 9, a mask expansion / contraction amount detection unit, and a substrate temperature adjustment mechanism. Yes. The mask expansion / contraction amount detection unit includes a lens 22, a camera 23, an image signal processing device 30, and a main control device 40. The substrate temperature adjustment mechanism includes a chuck 10, a heat medium passage 11, a heat exchanger 12, and a temperature. A sensor 13 and a temperature control device 14 are included. In addition to these, the exposure apparatus includes an irradiation optical system that irradiates exposure light, a carry-in unit that carries in the substrate 1, a carry-out unit that carries out the substrate 1, a temperature control unit that manages the temperature in the apparatus, and the like. Yes.

図1において、チャック10は、基板1の露光を行う露光位置にある。露光位置の上空には、マスクホルダ20によってマスク2が保持されている。基板1は、露光位置から離れた受け渡し位置において、図示しない搬入ユニットによりチャック10へ搭載され、また図示しない搬出ユニットによりチャック10から回収される。チャック10は、基板1を真空吸着して保持する。   In FIG. 1, the chuck 10 is at an exposure position where the substrate 1 is exposed. The mask 2 is held by the mask holder 20 above the exposure position. The substrate 1 is mounted on the chuck 10 by a carry-in unit (not shown) at a delivery position away from the exposure position, and is recovered from the chuck 10 by a carry-out unit (not shown). The chuck 10 holds the substrate 1 by vacuum suction.

チャック10は、Z−チルト機構9を介してθステージ8に搭載されており、θステージ8の下にはYステージ7及びXステージ5が設けられている。Xステージ5は、ベース3に設けられたXガイド4に沿ってX方向(図面横方向)へ移動する。Xステージ5のX方向への移動によって、チャック10は受け渡し位置と露光位置との間を移動する。Yステージ7は、Xステージ5に設けられたYガイド6に沿ってY方向(図面奥行き方向)へ移動する。θステージ8はθ方向へ回転し、Z−チルト機構9はZ方向(図面縦方向)へ移動及びチルトする。   The chuck 10 is mounted on the θ stage 8 via a Z-tilt mechanism 9, and a Y stage 7 and an X stage 5 are provided below the θ stage 8. The X stage 5 moves in the X direction (the horizontal direction in the drawing) along the X guide 4 provided on the base 3. As the X stage 5 moves in the X direction, the chuck 10 moves between the delivery position and the exposure position. The Y stage 7 moves in the Y direction (the drawing depth direction) along the Y guide 6 provided on the X stage 5. The θ stage 8 rotates in the θ direction, and the Z-tilt mechanism 9 moves and tilts in the Z direction (vertical direction in the drawing).

露光位置において、Xステージ5のX方向への移動、Yステージ7のY方向への移動、及びθステージ8のθ方向への回転によって、基板1の位置決めが行われる。また、Z−チルト機構9のZ方向への移動及びチルトによって、マスク2と基板1とのギャップ制御が行われる。   At the exposure position, the substrate 1 is positioned by moving the X stage 5 in the X direction, moving the Y stage 7 in the Y direction, and rotating the θ stage 8 in the θ direction. Further, the gap control between the mask 2 and the substrate 1 is performed by the movement and tilt of the Z-tilt mechanism 9 in the Z direction.

マスクホルダ20に保持されたマスク2の上空には、図示しない照射光学系が配置されており、露光時、照射光学系からの露光光がマスク2を透過して基板1へ照射されることにより、マスク2のパターンが基板1の表面に転写され、基板1上にパターンが形成される。   An irradiation optical system (not shown) is disposed above the mask 2 held by the mask holder 20, and exposure light from the irradiation optical system passes through the mask 2 and is irradiated onto the substrate 1 during exposure. The pattern of the mask 2 is transferred to the surface of the substrate 1 to form the pattern on the substrate 1.

図2は、基板温度調節機構を示す図である。チャック10の内部には、熱媒体の通る熱媒体通路11が設けられている。熱交換器12は、一次熱媒体と二次熱媒体との熱交換を行い、チャック10に設けた熱媒体通路11へ二次熱媒体を供給し、熱媒体通路11を通った二次熱媒体を回収する。熱媒体通路11へ供給された二次熱媒体により、基板1に接触するチャック10の温度が調節され、チャック10を介して基板1の温度が調節される。熱交換器12は、温度制御装置14の制御により、熱媒体通路11へ供給する二次熱媒体の温度及び量を変化させて、チャック10の温度を変化させる。   FIG. 2 is a diagram showing a substrate temperature adjusting mechanism. A heat medium passage 11 through which the heat medium passes is provided inside the chuck 10. The heat exchanger 12 exchanges heat between the primary heat medium and the secondary heat medium, supplies the secondary heat medium to the heat medium passage 11 provided in the chuck 10, and passes through the heat medium passage 11. Recover. The temperature of the chuck 10 contacting the substrate 1 is adjusted by the secondary heat medium supplied to the heat medium passage 11, and the temperature of the substrate 1 is adjusted via the chuck 10. The heat exchanger 12 changes the temperature of the chuck 10 by changing the temperature and amount of the secondary heat medium supplied to the heat medium passage 11 under the control of the temperature control device 14.

図1において、マスク2の表面の複数箇所には、マスク2の伸縮量を検出するための検出用パターン21が設けられている。本実施の形態では、マスク2の表面の二箇所に検出用パターン21が設けられているが、マスク2の表面の三箇所以上に検出用パターン21を設けてもよい。   In FIG. 1, detection patterns 21 for detecting the amount of expansion / contraction of the mask 2 are provided at a plurality of locations on the surface of the mask 2. In the present embodiment, the detection patterns 21 are provided at two locations on the surface of the mask 2, but the detection patterns 21 may be provided at three or more locations on the surface of the mask 2.

マスク2に設けた検出用パターン21の上空には、レンズ22及びカメラ23が配置されている。レンズ22は、マスク2の表面からの反射光を集光し、カメラ23の受光面に結像させる。カメラ23は、受光面で受光した反射光から、検出用パターン21の画像を取得して、画像信号を出力する。画像信号処理装置30は、主制御装置40の制御により、カメラ23が出力した画像信号を処理する。主制御装置40は、画像信号処理装置30の処理結果から、マスク2の伸縮量を検出する。   A lens 22 and a camera 23 are arranged above the detection pattern 21 provided on the mask 2. The lens 22 collects the reflected light from the surface of the mask 2 and forms an image on the light receiving surface of the camera 23. The camera 23 acquires an image of the detection pattern 21 from the reflected light received by the light receiving surface, and outputs an image signal. The image signal processing device 30 processes the image signal output from the camera 23 under the control of the main control device 40. The main control device 40 detects the expansion / contraction amount of the mask 2 from the processing result of the image signal processing device 30.

図3は、主制御装置の動作を示すフローチャートである。主制御装置40は、基板1の温度調節を開始するに、基準温度における検出用パターン21の間隔L及び基板1の熱膨張率を記憶している(ステップ401)。基板1の温度調節を開始すると、主制御装置40は、まず、画像信号処理装置30の処理結果から、各検出用パターン21の位置を検出する(ステップ402)。主制御装置40は、次に、各検出用パターンの位置から検出用パターンの間隔L’を算出し(ステップ403)、続いて、検出用パターンの間隔L,L’からマスクの伸縮量ΔL=L’−Lを算出する(ステップ404)。   FIG. 3 is a flowchart showing the operation of the main controller. The main controller 40 stores the interval L of the detection pattern 21 at the reference temperature and the thermal expansion coefficient of the substrate 1 in order to start temperature adjustment of the substrate 1 (step 401). When temperature adjustment of the substrate 1 is started, the main control device 40 first detects the position of each detection pattern 21 from the processing result of the image signal processing device 30 (step 402). Next, main controller 40 calculates detection pattern interval L ′ from the position of each detection pattern (step 403), and subsequently, mask expansion / contraction amount ΔL = from detection pattern intervals L and L ′. L′−L is calculated (step 404).

マスク2の二箇所に設けた検出用パターン21の画像から、各検出用パターン21の位置の検出、検出用パターン21の間隔の算出、及びマスク2の伸縮量の算出という簡単な処理により、マスク2の温度変化による伸縮量が高精度に検出される。   From the images of the detection patterns 21 provided at two locations on the mask 2, the mask is detected by simple processing of detecting the position of each detection pattern 21, calculating the interval between the detection patterns 21, and calculating the amount of expansion / contraction of the mask 2. The amount of expansion / contraction due to temperature change 2 is detected with high accuracy.

主制御装置40は、算出したマスク2の伸縮量に基づいて、基板1の露光領域がマスク2の露光領域と同じだけ伸縮する様に、基板1の熱膨張率を用いてチャック10の目標温度を算出する(ステップ405)。そして、主制御装置40は、温度制御装置14に目標温度を設定する(ステップ406)。図1及び図2において、温度センサー13は、チャック10の温度を検出し、温度制御装置14は、温度センサー13で検出したチャック10の温度が目標温度となる様に、熱交換器12を制御する。   Based on the calculated expansion / contraction amount of the mask 2, the main controller 40 uses the coefficient of thermal expansion of the substrate 1 so that the exposure area of the substrate 1 expands / contracts as much as the exposure area of the mask 2. Is calculated (step 405). Then, main controller 40 sets a target temperature in temperature controller 14 (step 406). 1 and 2, the temperature sensor 13 detects the temperature of the chuck 10, and the temperature control device 14 controls the heat exchanger 12 so that the temperature of the chuck 10 detected by the temperature sensor 13 becomes the target temperature. To do.

マスク2の伸縮量に基づいてチャック10の目標温度を算出し、チャック10の温度を検出し、検出したチャック10の温度が目標温度となる様に、チャック10に設けた熱媒体通路11へ供給する二次熱媒体の温度及び量を制御するので、チャック10を介して基板1の温度が高精度に調節され、マスク2の伸縮に合わせて基板1が伸縮される。   The target temperature of the chuck 10 is calculated based on the expansion / contraction amount of the mask 2, the temperature of the chuck 10 is detected, and the detected temperature of the chuck 10 is supplied to the heat medium passage 11 provided in the chuck 10 so as to become the target temperature. Since the temperature and amount of the secondary heat medium to be controlled are controlled, the temperature of the substrate 1 is adjusted with high accuracy via the chuck 10, and the substrate 1 is expanded and contracted in accordance with the expansion and contraction of the mask 2.

以上説明した実施の形態によれば、マスク2の温度変化による伸縮量を検出し、検出結果に応じて基板1の温度を調節して、マスク2の伸縮に合わせて基板1を伸縮させることにより、プロキシミティ方式の露光装置において、マスク2が温度変化により伸縮しても、パターンの焼き付け精度が低下するのを防止することができる。   According to the embodiment described above, the expansion / contraction amount due to the temperature change of the mask 2 is detected, the temperature of the substrate 1 is adjusted according to the detection result, and the substrate 1 is expanded / contracted according to the expansion / contraction of the mask 2. In the proximity type exposure apparatus, even if the mask 2 expands or contracts due to a temperature change, it is possible to prevent the pattern printing accuracy from being lowered.

さらに、以上説明した実施の形態によれば、マスク2の二箇所に設けた検出用パターン21の画像から、各検出用パターン21の位置の検出、検出用パターン21の間隔の算出、及びマスク2の伸縮量の算出という簡単な処理により、マスク2の温度変化による伸縮量を高精度に検出することができる。   Furthermore, according to the embodiment described above, the position of each detection pattern 21 is detected from the images of the detection patterns 21 provided at two locations of the mask 2, the interval between the detection patterns 21 is calculated, and the mask 2. By a simple process of calculating the amount of expansion / contraction, the amount of expansion / contraction due to temperature change of the mask 2 can be detected with high accuracy.

さらに、以上説明した実施の形態によれば、マスク2の伸縮量に基づいてチャック10の目標温度を算出し、チャック10の温度を検出し、検出したチャック10の温度が目標温度となる様に、チャック10に設けた熱媒体通路11へ供給する二次熱媒体の温度及び量を制御することにより、チャック10を介して基板1の温度を高精度に調節することができ、マスク2の伸縮に合わせて基板1を伸縮させることができる。   Further, according to the embodiment described above, the target temperature of the chuck 10 is calculated based on the expansion / contraction amount of the mask 2, the temperature of the chuck 10 is detected, and the detected temperature of the chuck 10 becomes the target temperature. By controlling the temperature and amount of the secondary heat medium supplied to the heat medium passage 11 provided in the chuck 10, the temperature of the substrate 1 can be adjusted with high accuracy via the chuck 10, and the mask 2 can be expanded and contracted. The substrate 1 can be expanded and contracted according to the above.

本発明の露光装置又は露光方法を用いて、マスクのパターンを基板へ転写することにより、マスクが温度変化により伸縮しても、パターンの焼き付け精度が低下するのを防止することができるので、高品質な基板を製造することができる。   By transferring the mask pattern to the substrate using the exposure apparatus or the exposure method of the present invention, it is possible to prevent the pattern printing accuracy from being lowered even if the mask expands or contracts due to a temperature change. A quality substrate can be manufactured.

例えば、図4は、液晶ディスプレイ装置のTFT基板の製造工程の一例を示すフローチャートである。薄膜形成工程(ステップ101)では、スパッタ法やプラズマ化学気相成長(CVD)法等により、ガラス基板上に液晶駆動用の透明電極となる導電体膜や絶縁体膜等の薄膜を形成する。レジスト塗布工程(ステップ102)では、ロール塗布法等により感光樹脂材料(フォトレジスト)を塗布して、薄膜形成工程(ステップ101)で形成した薄膜上にフォトレジスト膜を形成する。露光工程(ステップ103)では、プロキシミティ露光装置や投影露光装置等を用いて、マスクのパターンをフォトレジスト膜に転写する。現像工程(ステップ104)では、シャワー現像法等により現像液をフォトレジスト膜上に供給して、フォトレジスト膜の不要部分を除去する。エッチング工程(ステップ105)では、ウエットエッチングにより、薄膜形成工程(ステップ101)で形成した薄膜の内、フォトレジスト膜でマスクされていない部分を除去する。剥離工程(ステップ106)では、エッチング工程(ステップ105)でのマスクの役目を終えたフォトレジスト膜を、剥離液によって剥離する。これらの各工程の前又は後には、必要に応じて、基板の洗浄/乾燥工程が実施される。これらの工程を数回繰り返して、ガラス基板上にTFTアレイが形成される。   For example, FIG. 4 is a flowchart showing an example of the manufacturing process of the TFT substrate of the liquid crystal display device. In the thin film formation step (step 101), a thin film such as a conductor film or an insulator film, which becomes a transparent electrode for driving liquid crystal, is formed on a glass substrate by sputtering, plasma chemical vapor deposition (CVD), or the like. In the resist coating process (step 102), a photosensitive resin material (photoresist) is applied by a roll coating method or the like to form a photoresist film on the thin film formed in the thin film forming process (step 101). In the exposure step (step 103), the mask pattern is transferred to the photoresist film using a proximity exposure apparatus, a projection exposure apparatus, or the like. In the development step (step 104), a developer is supplied onto the photoresist film by a shower development method or the like to remove unnecessary portions of the photoresist film. In the etching process (step 105), a portion of the thin film formed in the thin film formation process (step 101) that is not masked by the photoresist film is removed by wet etching. In the stripping step (step 106), the photoresist film that has finished the role of the mask in the etching step (step 105) is stripped with a stripping solution. Before or after each of these steps, a substrate cleaning / drying step is performed as necessary. These steps are repeated several times to form a TFT array on the glass substrate.

また、図5は、液晶ディスプレイ装置のカラーフィルタ基板の製造工程の一例を示すフローチャートである。ブラックマトリクス形成工程(ステップ201)では、レジスト塗布、露光、現像、エッチング、剥離等の処理により、ガラス基板上にブラックマトリクスを形成する。着色パターン形成工程(ステップ202)では、染色法、顔料分散法、印刷法、電着法等により、ガラス基板上に着色パターンを形成する。この工程を、R、G、Bの着色パターンについて繰り返す。保護膜形成工程(ステップ203)では、着色パターンの上に保護膜を形成し、透明電極膜形成工程(ステップ204)では、保護膜の上に透明電極膜を形成する。これらの各工程の前、途中又は後には、必要に応じて、基板の洗浄/乾燥工程が実施される。   FIG. 5 is a flowchart showing an example of the manufacturing process of the color filter substrate of the liquid crystal display device. In the black matrix forming step (step 201), a black matrix is formed on the glass substrate by processes such as resist coating, exposure, development, etching, and peeling. In the colored pattern forming step (step 202), a colored pattern is formed on the glass substrate by a dyeing method, a pigment dispersion method, a printing method, an electrodeposition method, or the like. This process is repeated for the R, G, and B coloring patterns. In the protective film forming step (step 203), a protective film is formed on the colored pattern, and in the transparent electrode film forming step (step 204), a transparent electrode film is formed on the protective film. Before, during or after each of these steps, a substrate cleaning / drying step is performed as necessary.

図4に示したTFT基板の製造工程では、露光工程(ステップ103)において、図5に示したカラーフィルタ基板の製造工程では、ブラックマトリクス形成工程(ステップ201)及び着色パターン形成工程(ステップ202)の露光処理において、本発明の露光装置又は露光方法を適用することができる。   In the TFT substrate manufacturing process shown in FIG. 4, in the exposure process (step 103), in the color filter substrate manufacturing process shown in FIG. 5, in the black matrix forming process (step 201) and the colored pattern forming process (step 202). In this exposure process, the exposure apparatus or the exposure method of the present invention can be applied.

本発明の一実施の形態による露光装置の概略構成を示す図である。1 is a diagram showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention. 基板温度調節機構を示す図である。It is a figure which shows a board | substrate temperature control mechanism. 主制御装置の動作を示すフローチャートである。It is a flowchart which shows operation | movement of a main controller. 液晶ディスプレイ装置のTFT基板の製造工程の一例を示すフローチャートである。It is a flowchart which shows an example of the manufacturing process of the TFT substrate of a liquid crystal display device. 液晶ディスプレイ装置のカラーフィルタ基板の製造工程の一例を示すフローチャートである。It is a flowchart which shows an example of the manufacturing process of the color filter board | substrate of a liquid crystal display device.

符号の説明Explanation of symbols

1 基板
2 マスク
3 ベース
4 Xガイド
5 Xステージ
6 Yガイド
7 Yステージ
8 θステージ
9 Z−チルト機構
10 チャック
11 熱媒体通路
12 熱交換器
13 温度センサー
14 温度制御装置
20 マスクホルダ
21 検出用パターン
22 レンズ
23 カメラ
30 画像信号処理装置
40 主制御装置
DESCRIPTION OF SYMBOLS 1 Substrate 2 Mask 3 Base 4 X guide 5 X stage 6 Y guide 7 Y stage 8 θ stage 9 Z-tilt mechanism 10 Chuck 11 Heat medium passage 12 Heat exchanger 13 Temperature sensor 14 Temperature controller 20 Mask holder 21 Detection pattern 22 Lens 23 Camera 30 Image signal processor 40 Main controller

Claims (8)

マスクと基板との間に微小なギャップを設けて、マスクのパターンを基板へ転写する露光装置であって、
マスクの温度変化による伸縮量を検出する検出手段と、
前記検出手段の検出結果に応じて基板の温度を調節して、マスクの伸縮に合わせて基板を伸縮させる基板温度調節手段とを備えたことを特徴とする露光装置。
An exposure apparatus for transferring a mask pattern to a substrate by providing a minute gap between the mask and the substrate,
Detection means for detecting the amount of expansion and contraction due to temperature change of the mask;
An exposure apparatus comprising: a substrate temperature adjusting unit that adjusts the temperature of the substrate in accordance with a detection result of the detecting unit and expands and contracts the substrate in accordance with the expansion and contraction of the mask.
前記検出手段は、
マスクの複数箇所に設けた検出用パターンの画像を取得して、画像信号を出力する複数の画像取得手段と、
前記画像取得手段が出力した画像信号を処理する画像信号処理装置と、
前記画像信号処理装置の処理結果から各検出用パターンの位置を検出し、各検出用パターンの位置から検出用パターンの間隔を算出し、検出用パターンの間隔からマスクの伸縮量を算出する主制御装置とを有することを特徴とする請求項1に記載の露光装置。
The detection means includes
A plurality of image acquisition means for acquiring images of detection patterns provided at a plurality of locations of the mask and outputting image signals;
An image signal processing apparatus for processing the image signal output by the image acquisition means;
Main control for detecting the position of each detection pattern from the processing result of the image signal processing device, calculating the interval of the detection pattern from the position of each detection pattern, and calculating the expansion / contraction amount of the mask from the interval of the detection pattern The exposure apparatus according to claim 1, further comprising: an exposure apparatus.
前記基板温度調節手段は、
基板に接触するチャックと、
前記チャックに設けた熱媒体通路と、
前記熱媒体通路へ熱媒体を供給し、供給する熱媒体の温度及び量を変化させて前記チャックの温度を変化させる熱交換器と、
前記チャックの温度を検出する温度センサーと、
前記温度センサーで検出したチャックの温度が目標温度となる様に、前記熱交換器を制御する温度制御装置とを有し、
前記主制御装置は、算出したマスクの伸縮量に基づいてチャックの目標温度を算出して、前記温度制御装置に目標温度を設定することを特徴とする請求項2に記載の露光装置。
The substrate temperature adjusting means includes
A chuck that contacts the substrate;
A heat medium passage provided in the chuck;
A heat exchanger for supplying a heat medium to the heat medium passage, and changing the temperature and amount of the supplied heat medium to change the temperature of the chuck;
A temperature sensor for detecting the temperature of the chuck;
A temperature control device for controlling the heat exchanger so that the temperature of the chuck detected by the temperature sensor becomes a target temperature;
The exposure apparatus according to claim 2, wherein the main control device calculates a target temperature of the chuck based on the calculated expansion / contraction amount of the mask, and sets the target temperature in the temperature control device.
マスクと基板との間に微小なギャップを設けて、マスクのパターンを基板へ転写する露光方法であって、
マスクの温度変化による伸縮量を検出し、
検出結果に応じて基板の温度を調節して、マスクの伸縮に合わせて基板を伸縮させることを特徴とする露光方法。
An exposure method for transferring a mask pattern to a substrate by providing a minute gap between the mask and the substrate,
Detects the amount of expansion / contraction due to the temperature change of the mask,
An exposure method characterized by adjusting the temperature of a substrate in accordance with a detection result, and expanding and contracting the substrate in accordance with expansion and contraction of a mask.
マスクの複数箇所に検出用パターンを設け、
各検出用パターンの画像を取得し、
各検出用パターンの画像信号を処理して、各検出用パターンの位置を検出し、
各検出用パターンの位置から検出用パターンの間隔を算出し、
検出用パターンの間隔からマスクの伸縮量を算出することを特徴とする請求項4に記載の露光方法。
Provide detection patterns at multiple locations on the mask,
Acquire an image of each detection pattern,
Process the image signal of each detection pattern to detect the position of each detection pattern,
Calculate the interval of the detection pattern from the position of each detection pattern,
5. The exposure method according to claim 4, wherein the expansion / contraction amount of the mask is calculated from the interval between the detection patterns.
基板に接触するチャックに熱媒体通路を設け、
チャックに設けた熱媒体通路へ熱媒体を供給し、供給する熱媒体の温度及び量を変化させてチャックの温度を変化させ、
算出したマスクの伸縮量に基づいてチャックの目標温度を算出し、
チャックの温度を検出し、
検出したチャックの温度が目標温度となる様に、チャックに設けた熱媒体通路へ供給する熱媒体の温度及び量を制御することを特徴とする請求項5に記載の露光方法。
A heat medium passage is provided in the chuck that contacts the substrate,
Supply the heat medium to the heat medium passage provided in the chuck, change the temperature and amount of the supplied heat medium, change the temperature of the chuck,
Calculate the target temperature of the chuck based on the calculated expansion / contraction amount of the mask,
Detect chuck temperature,
6. The exposure method according to claim 5, wherein the temperature and amount of the heat medium supplied to the heat medium passage provided in the chuck are controlled so that the detected temperature of the chuck becomes a target temperature.
請求項1乃至請求項3のいずれか一項に記載の露光装置を用いて、マスクのパターンを基板へ転写することを特徴とする表示用パネル基板の製造方法。   A method for manufacturing a display panel substrate, comprising: transferring a mask pattern onto the substrate using the exposure apparatus according to claim 1. 請求項4乃至請求項6のいずれか一項に記載の露光方法を用いて、マスクのパターンを基板へ転写することを特徴とする表示用パネル基板の製造方法。   A method for manufacturing a display panel substrate, wherein a mask pattern is transferred to a substrate using the exposure method according to claim 4.
JP2006238867A 2006-09-04 2006-09-04 Exposure apparatus, exposure method and method for manufacturing display panel substrate Pending JP2008058898A (en)

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