TWI640837B - Substrate tuning system and method using optical projection - Google Patents

Abstract

The techniques in this specification include providing a system and method for spatially or pixel-based projection of light onto a substrate to adjust various substrate characteristics. The specific pixel-based image projected onto the surface of the substrate may be based on a substrate mark. This substrate mark can spatially represent the non-uniformity of the entire substrate surface. Such non-uniformities may include energy, thermal energy, critical dimensions, light lithography exposure dose, and the like. Such a pixel-based light projection can be used to adjust various substrate characteristics, including adjusting key dimensions, heating uniformity, evaporative cooling, and generation of photosensitizers. Combining such a pixel-based light projection with a light lithography patterning process and / or a heating process will improve processing uniformity and reduce the defect rate.

Description

System and method for adjusting substrate using optical projection

[Cross-reference to related applications] This application claims US Patent Application No. 14/974974, filed on December 18, 2015, as the priority parent case, and the invention name of this application is "Substrate Tuning System and Method Using Optical Projection ", and the entire disclosure of the application is incorporated in this specification for reference.

This disclosure generally relates to the patterning of substrates (including semiconductor substrates, such as silicon wafers). This disclosure also relates to a process involving photolithography as part of the processing of semiconductor devices. Photolithography involves coating a film on a substrate and developing the film. This disclosure is particularly about controlling the size and accuracy of the patterned features as part of the photolithography and patterning process.

Photolithography involves coating substrates with films that are sensitive to electromagnetic (EM, electromagnetic) radiation, exposing these films to patterns of actinic radiation to define potential patterns within the film, and then developing (dissolving and displacing) several of the films Divide) to reveal the solid or undulating pattern on the substrate. Processing tools for coating and developing substrates typically include a number of modules that can be used to add films, add resist, and develop substrates.

The technology in this specification includes systems and methods that provide spatially controlled projection of light or electromagnetic (EM, electromagnetic) radiation onto a substrate. Light with a wavelength of 400-700nm, UV (Ultra Violet), infrared light, or light of any wavelength directed at the target can be used to heat or provide actinic radiation to process the substrate.

This disclosure proposes a technique for spatially changing the critical dimensions (CDs, critical dimensions) and / or temperature of a substrate, and can be applied to vacuum and non-vacuum processing systems in semiconductors, flat panel displays, and photovoltaic systems, including deposition systems, etching System (wet and dry). For example, pixel-based projected light patterns can correct key dimensions, lithographic exposure non-uniformities, stepper exposure delay times, and the like.

Of course, the order of discussion of the different steps as described in this specification is presented for clarity. In general, the steps may be performed in any suitable order. In addition, although different features, technologies, structural configurations, etc. in this specification can be discussed at different positions in this disclosure, the intention is that each concept can be implemented independently or in combination with each other. Therefore, the present invention can be implemented or considered in many different ways.

It should be noted that the content of the present invention does not specifically describe the embodiments of the present disclosure or the claimed invention and / or gradually increase the novel aspect. Instead, this summary only provides preliminary discussions of different embodiments and corresponding points of novelty that are superior to conventional techniques. For additional details and / or reasonable points of view of the present invention and embodiments, the reader will be directed to the implementation part of the disclosure and the corresponding diagrams, as discussed further below.

The techniques in this specification include providing a system and method for spatially or pixel-based projection of light onto a substrate to adjust various substrate characteristics. Such pixel-based light projection can be used to adjust various substrate characteristics, including adjusting critical dimensions (CDs, critical dimensions), heating uniformity, evaporative cooling, photolithography flash flame, grating retardation, and photosensitizer generation. Such pixel-based light projections can achieve significant improvements in critical dimension uniformity across the substrate surface. Combining such a pixel-based light projection with a photolithography patterning process can improve processing uniformity and reduce defect rates.

In an embodiment, a digital light processing (DLP) chip, a grating light valve (GLV), a laser galvanometer, or other grid-type micro-projection technology combined with a light source can make an image Focus (optionally using a lens) onto the substrate and correct or adjust key dimensions, temperature, and other non-uniformities. The system can be configured to vary the radiation output of the projected image. For example, a solid white image projected onto a board using a visible spectrum light bulb will heat the board to a specific maximum temperature for that particular light bulb. The temperature of each projected pixel can be adjusted by using all or some of the light wavelengths generated by the light source or not using the light wavelength. Such technology provides extremely precise control over the specific baking process of the semiconductor, which is sufficient to bake the semiconductor to within 1 nm. Similarly, the amount of actinic radiation at each projected pixel position on the working surface of the substrate can be adjusted between non-projected radiation (of a specific light source) and full-projected radiation, with many levels of variation between the two. A DLP wafer or laser galvanometer can, for example, project an image onto a substrate and change the amount of thermal energy or CD adjustment (by the generation of a photoactivator) at any particular point or multiple points on the substrate.

The projection image as disclosed in this specification may vary depending on the selected projection system and the number of pixels supported by the incident area or the pixel projection size to the output to individual features on the substrate. That is, the CD control obtainable using micro-mirror projection can be as flexible or fine-tuned as its maximum projection resolution. It should be noted that the system in this specification can be configured to project a specific image onto the substrate, such as simultaneous projection of all indicated pixel positions, or such as a raster scan projection (where the specific image is projected onto the substrate line by line) . In one embodiment, the pixel-based light projection system is a control computer connected to a baking device, an exposure chamber, a distribution chamber, a heating plate, an etching chamber, and the like. The pixel-based light projection system can be selectively focused through a lens system into an exposure chamber in which the substrates are aligned. The light projected onto or at the substrate then adjusts the desired area of the substrate, for example by generating more photoacid. Such methods and systems have several uses. One application is to maintain temperature uniformity. Another application is to reduce or increase critical dimensions on processed wafers as part of semiconductor production.

FIG. 1 is a schematic diagram of an exemplary substrate adjustment system. The processing chamber 108 may be sized to receive a substrate, such as a silicon wafer, a flat plate, or the like. The processing chamber 108 may be a relatively minimum size (based on the size of the substrate), such as when a module is installed in a larger tool. The substrate alignment system 107 can be used to align the image onto an operable area on the substrate, which can be aligned within 0.1 nm. The substrate 105 can be placed on a substrate holder. The substrate 105 may be a conventional reflective or non-reflective silicon disc, which has any type of coating.

The system includes a light source 102 that may be located within, adjacent to, or remote from the processing chamber 108. The light source 102 may be any of several light sources, such as a visible light source, an infrared light source, a UV light source, a laser, or a light bulb that generates other light wavelengths. The light source characteristics can be customized (or selected) for specific substrates to be processed and specific adjustment applications. For some substrates, a 60-watt (or equivalent) light source may be sufficient, with a wavelength range of 400-700 nm, and a DLP resolution of 1080p (vertical resolution and sequential scanning of 1080 horizontal lines). Other applications may require higher power and higher resolution. The light source can be selected based on the specific wavelength required. For example, an ultraviolet light source can be selected for some applications, while a white or infrared light source can be selected for other applications. The choice of light source can be based on the absorption characteristics of a particular substrate and / or film. Any resolution supported by DLP, GLV, laser galvanometer, or other light projection technology can be used.

The light projection element 103 may be implemented as a laser galvanometer, a DLP chip, a grating light valve (GLV, grating light valve), or other light projection technology. DLP chips and GLVs are conventionally available. Digital laser galvanometers are also known. The lens system 104 is optionally used to assist in generating an image, which has the same size as the size of the substrate 105 when projected onto the substrate 105 and has the smallest aberration. The projection line 106 represents an image field or video projected onto the substrate 105 using a synchronous projection or a raster-based projection. The video or image can be designed based on the expected CD value and / or based on the dynamic feedback from a metering element configured to identify CD differences across the substrate. The component 101 shows an exemplary location on the substrate 105, which has a different critical dimension from the rest of the substrate. The projected image 109 projects light in the shape of one of the parts 101. If the component 101 has exactly a larger CD than the remaining surface area of the substrate 105, the projected image 109 can increase the actinic radiation projected on these areas so that a uniform CD value mark is spread over the entire surface of the substrate 105 For example, to help remove excess material by increasing the production of photoactivators.

The system in this specification thus incorporates a thickness control system for micro-control of critical dimensions. Each position where the projected pixel can be turned on or off thus becomes an area that can be fine-tuned for thermal energy, temperature, CD correction, and photoreactivity.

FIG. 5 is a diagram showing a simplified example CD mark of a specific substrate. This may be a CD mark across the cross section of the substrate. In this example CD mark, there are 19 point positions for measuring the relative difference of the CD. The top of the graph indicates a relatively large CD change or CD value, and the bottom of the graph may also indicate the relative difference of the CD, but when the top of the graph indicates an overly large CD, the bottom of the graph may indicate an overly small CD. It should be noted that there is a CD change on the entire substrate, and this CD change with the plane position is an embodiment of the CD mark.

FIG. 6 is a diagram showing a projected image, which is used to correct the CD change of the CD symbol shown in FIG. 5. In other words, the projected image is compensated with a changing CD mark. For example, it should be noted that points 1, 9, 10, 17, and 18 of the CD notation in FIG. 5 have relatively small CDs. It can be noticed that the projection image in FIG. 6 does not have light projected to these positions, which causes no increase in the photoreactant. The dot positions 2 and 12 of the CD mark in FIG. 5 have relatively large CDs. Therefore, in the image projection in FIG. 6, these dot positions are displayed in white, which represents full exposure / full exposure radiation, and is used to cause Production of the largest possible photoreactant under a given light source. The other point positions are shown in different shades of gray. Moderate changes representing CD values are similarly corrected using variable light projection. FIG. 7 shows a modified or corrected CD mark, which is a result of applying the projection image in FIG. 6 to the CD mark in FIG. 5. It should be noted that most of the CD values have been modified compared to the CD notation in FIG. 5, so that the CD change is greatly reduced. And it should be noted that after any intermediate step of baking and / or developing to remove material from a more ideal CD, a corrected CD indicia can be achieved.

The substrate symbols shown in FIG. 5 are simplified linear symbols. The substrate is usually planar, and therefore the uniformity variation can vary based on the plane or X, Y position on the substrate. FIG. 3 is a diagram depicting an example key size notation. This critical dimension mark is mapped to a point position on the surface of a specific substrate (such as a wafer used in a micro-machining process). It should be noted that the various points on the CD mark diagram have a change in lightness and darkness. These relative differences at the positions of the dots on the CD symbol map represent the relative differences in CD uniformity. For example, a spot position that is completely dark may represent an area with a CD that is too small, and a spot position that is completely bright or lighter may represent an area with a CD that is too large. This CD indicia can be generated based on the observed and / or measured dimensions.

The substrate mark icon shown in FIG. 3 may also represent what a specific light projection may look like on a processed substrate. It should be noted that the specific light source may be UV or infrared, and thus FIG. 3 may represent the appearance of the projected energy symbol, or the appearance of the cumulative effect of the energy symbol. Changes in the darkness of the hatched pattern can represent the intensity, amplitude, and / or frequency of light. Therefore, the dot positions on the surface of the substrate receiving the full brightness of the projection light may include bright or white areas in the figure. Likewise, point locations with less white space may have medium or partial brightness of light projected at those locations. The dot locations shown as black blocks in this figure may not receive light or receive a relatively small amount of exposure. It should be noted that the substrate mark may vary in visual performance based on the non-uniformity or the type of mark. For example, a CD mark can be presented as a number of perceptible lines corresponding to a cut track, a mark. Substrate marks showing raster delay non-uniformities can show evidence that a particular stepper / scanner travels across the substrate surface. The substrate mark for CD non-uniformity may have a circular pattern or may show a difference at the interface of the CD area.

FIG. 4 is similar to FIG. 1, and FIG. 4 illustrates an exemplary embodiment of an optical projection adjustment system for adjusting the substrate 105. The substrate 105 may include each of the following: a film 115, which may be a photoresist film; and a lower layer 110, which may be a hard mask or other patterned layer or a memory layer for pattern transfer. The light projection element 103, or an accompanying controller, can receive a pixel-based image for projection onto the substrate 105. The projection of the pixel-based image is displayed as a projected image 109. It should be noted that a part of the substrate 105 is irradiated, and other parts are not irradiated. Use pixel-based image projection instead of mask-based light projection for light lithography exposure. During projection, the projected image may change or change, such as in response to instant feedback or other adjustment targets.

The particular image or video projected may be based on one or more sensors that may collect data before the processing process (static adjustment) or during the processing process for dynamic adjustment. In the feedback loop, a specific sensor or sensor array can collect data (such as a CD mark) and then transmit the collected data to the controller. Based on the collected data and / or based on whether thermal or light correction (CD correction) is required, the controller may then calculate an image for projection onto a substrate. A proportional-integral-derivative controller (PID controller) can be used to implement CD mark feedback. The projected image can be changed based on any changes across the substrate, such as center-to-edge changes.

It should be noted that the intensity or amplitude of light may be adjusted based on the type of material on the substrate surface. For example, some polymers may have low reflectance, while other materials (such as silicon and metals) may have maximum reflectance values. In a particular example material, copper, the reflectivity can be 45% to 99%, although the copper surface will heat up when light is incident on the copper. Therefore, the technique in this specification can be applied to most substrate materials.

FIG. 2 is a side view of an example system for improved substrate processing. The substrate 105 is located on the substrate holder 130, and the substrate holder 130 may be implemented as or include a thermal chuck. Above the substrate (facing the substrate to be processed side), a laser galvanometer, a DLP projector, or the like may be provided as a part of the light projection element 103 to project an image onto the substrate surface. The position of the projector may change based on the availability of space within a particular cavity. For example, the heating modules of many micromachining tools are relatively short. In these embodiments, various openings 135 and / or lens systems may be used to project images in any limited vertical space above the substrate. Example height and width measurements are shown, but these example height and width measurements are non-limiting and are only used to illustrate specific embodiments.

Special light projection systems can be produced for such substrate adjustment or heating modules. Alternatively, a conventional laser galvanometer and a DLP projector can be used.

Other embodiments may use bulbs of different wavelengths to project light onto a single substrate. These bulbs can all contribute to light projection or can be selectively activated. Similarly, a configuration of multiple projectors per substrate processing module may be used. In other embodiments, the light projection may have a frequency-based output for finer adjustments, such as using 3D graphics. In addition to the image-based light projector, a camera 143 or other measuring element may be set in consideration of the substrate 105 to identify a specific CD mark in real time and dynamically adjust a projected image based on the CD mark. In another embodiment, a sensor array can be installed and connected to a feedback loop of a PID controller.

Projecting an image based on the CD mark onto a substrate located on a substrate holder is only one embodiment of the system and method in this specification. There are many other applications and embodiments for processing substrates at various stages of semiconductor processing. Therefore, the application is not limited to the lithography technique. In another embodiment, a projected light-thermal technique may be used during substrate coating (eg, coating photoresist). Projecting an image onto a rotating substrate during liquid coating can help mitigate the effects of evaporative cooling. The benefit is that a lower dispensing amount is required while providing better coating uniformity. If a non-transparent object in the spin-coating chamber hinders light projection, the light can be projected onto at least a section of the substrate. Due to the rotation of the substrate, this will be essentially a frequency-based projection (this is only for one path). Embodiments in which the segment can be illuminated at a particular point in time).

In other embodiments, the light image projection may be used for both post-application bake (PAB) and post-exposure bake (PEB). Light image projection can be used in the EBR (edge bead removal) removal section-an area that can be "drawn" or projected for edge bead removal. Light image projection can be used as a way to print an array by defining the area for directed self-assembly (DSA) of a block copolymer. That is, the exposure of the DSA (directed self-assembly) printable in the array can be fully enhanced, and the remaining areas are not exposed, so that the block copolymer can be used without a cutting mask. Self-assembly, which can save a process step in some micro-machining processes.

The embodiments in this specification can be used with wet or dry substrate cleaning systems. With a wet cleaning system, the projected light image can help center-to-edge temperature uniformity. In some processes where liquid is distributed on a rotating substrate, the film thickness increases toward the center of the substrate compared to the edge. However, the techniques in this specification can help to equalize radial temperature uniformity. Depending on the positions of the distribution nozzle and the distribution arm, the image projected into the distribution chamber may be substantially a partial image (such as a pie-shaped image). Nonetheless, it can be effective to project onto only a portion of the substrate, especially when rotating the substrate, as all surfaces can be illuminated or projected through the image. Projecting images using UV light can further contribute to the reactivity of chemicals to improve the radial reactivity of such chemicals as a spatial light enhancement technology that can be combined with, for example, a UV lamp that directly provides most of the illumination. It should be noted that for UV light enhancement and projection, optics should be selected to achieve UV transmission, such as quartz, calcium fluoride, or other permeable conductive media. For example, in many temperature enhanced and actinic radiation enhanced embodiments, the amount of enhancement is typically less than 15% of the main thermal or actinic radiation treatment. For example, a specific substrate with a photoresist film is exposed to a mask-based pattern using a scanner or stepper tool. Under such light lithography exposure, the light dose at each crystal grain position is substantially the same. The embodiments in this specification can then be used to enhance a relatively small and different amount of exposure dose depending on the dot position of the substrate.

It should be understood that there are many and various embodiments for the systems and methods disclosed in this specification.

An embodiment includes a system or apparatus for processing a substrate. This system includes a chamber that is sized and configured to receive a substrate for processing. The substrate holder is disposed in the chamber and is configured to hold the substrate. The system includes an image projection system configured to project an image onto an upper surface (ie, a work surface or a treated surface) of the substrate when the substrate is in the chamber. The image projection system uses a micromirror projection element to project an image. The micro-mirror projection element may include, for example, a controllable mirror for reflecting a laser beam, or a microscopic mirror array corresponding to pixels in an image to be projected. The system includes a controller configured to control the image projection system and cause the image projection system to project a pixel-based image onto a working surface of a substrate. The image projection system includes a light source, and a pixel-based projection system can be used. The pixels of each projection can be changed by a parameter selected from the group consisting of light wavelength, light intensity, light frequency, and light amplitude. The image projection system may be configured to project an image based on a predetermined substrate mark, which may be a pixel-based representation of different surface characteristics (heat, exposure dose, key size change). The light source may be configured to provide actinic radiation to a particular substrate. The light source may be configured to provide radiation having a wavelength of less than 400 nanometers, such as ultraviolet radiation. A specific light source having a specific spectral line or a complex spectral line can be selected based on a specific radiation-sensitive film on the substrate. The projection based on the predetermined substrate mark may include a substrate mark that spatially maps different characteristics of the substrate surface.

In other embodiments, the specific projection image may be based on both the substrate mark and the CD etching mark of the specific / special etching chamber. The CD etching mark of a specific etching chamber represents or identifies various etching non-uniformities caused by a specific etching pattern transfer process. For example, in the case of a plasma dry etching chamber, depending on the particular type of plasma reactor, there is usually etching non-uniformity on the entire substrate surface. For example, the plasma may have a density change from center to edge and / or a density change from azimuth. Therefore, in some areas of the substrate, more or less etching may occur than in other areas. The result is that an etched substrate with a transferred pattern will have CD non-uniformity (even if the etch mask has a uniform CD). The system and method in this specification can compensate for such etching non-uniformities. By making the projection image based on both the substrate mark (the CD mark sent in) and the data used to identify how a particular etch chamber will or will etch the substrate, the result is that the image is projected to produce a pre-shifted CD It achieved CD standardization during subsequent etch procedures. As a non-limiting example, if a particular etching system etches more in the central portion of the substrate and less in the edge portion of the substrate, the projected image can be configured to adjust the CD being fed and shift the CD so that the central portion has a phase CDs that are larger (or smaller) than the edges. Then, when the substrate is etched, the incoming CD has dealt with the etching non-uniformity, so that the resulting etching produces a uniform CD on the entire substrate.

It should be noted that, for example, a substrate of a semiconductor wafer is usually supported or mounted on its backside surface (where the backside surface faces the ground), while performing, for example, coating, baking, lithography, development on its opposite surface , Etching and other processes. In this regard, the working surface usually faces upwards and is therefore the "upper surface", which is on the opposite side of the backside surface. The upper surface then refers to the surface opposite the backside surface, in other words the working surface. In some processing processes (such as electroplating), the substrate can be held vertically. In such a vertical configuration, the working surface faces the side edges, and thus the upper surface faces the side edges, but it is still the upper surface.

The processing system may also include a CD metering system configured to identify the pixel-based CD indicia of the substrate. The image projection system may use a laser galvanometer, a digital light processing (DLP) element, or a grating light valve (GLV) element to project an image onto a working surface of a substrate. Any image projection element that can adjust the optical intensity according to the position can be used. The system may include a dispensing system configured to dispense a liquid composition onto a substrate surface in the same processing chamber. The chamber can be set in a semiconductor processing tool, the tool includes at least one module that distributes liquid on a rotating substrate, and includes at least one module with a heating mechanism for heating the substrate. Such tools are often referred to as applicators / developers. In another embodiment, the chamber may be disposed in a semiconductor processing tool, the tool including each of the following: at least one module configured to distribute a photoresist on a substrate; and configured to distribute a developing chemical to the substrate At least one module on the board; at least one module for measuring CD; and at least one module configured to bake a substrate, as shown in FIG. 8. Other systems can be implemented as scanner / stepper tools, including micromirror projection systems or pixel-based projection systems. Such an embodiment may be configured with a processing chamber, which is a module independent of the lithographic exposure stack, or positioned to project an image onto the substrate surface during the lithographic exposure.

In other embodiments, the image projection system is configured to project a specific image onto the working surface of the wafer in a line-by-line manner. In another embodiment, the image projection system is configured to project a specific image onto the work surface of the wafer by using one or more mirrors configured to move the laser beam across the work surface. And change the amount of laser radiation directed to each pixel position on the working surface of the substrate. For example, such an image projection system may include the use of a laser galvanometer. The image projection system can be configured to project a specific image onto a working surface of a substrate in less than, for example, 30 seconds. Alternatively, a specific image may be projected onto the working surface of the substrate multiple times per second. For example, laser galvanometers have a raster scan or a raster-type projection mechanism. Such a grating projection may include projecting a laser beam in a line-by-line manner across the entire substrate surface. The projection speed can range from about hundreds of times per second to every few seconds or longer. When the laser galvanometer moves a specific laser beam or UV beam across the substrate, the intensity of the laser beam can be changed between 0% and 100% at each pixel position or analysis point on the working surface of the substrate. For example, an acousto-optic adjuster can be used to adjust the light intensity at each point location on a specific substrate surface. Alternatively, the dwell time of the projection radiation at a specific pixel position may be changed to provide the required light dose.

Another embodiment includes a method of processing a substrate. This method includes setting a substrate on a substrate holder. Setting the substrate may include receiving the substrate in a module of a semiconductor processing tool. The semiconductor processing tool may include at least one module that distributes a photoresist on a substrate. Such a processing tool may include a substrate carrying mechanism for automatically moving substrates between different processing modules. The light is then projected onto the surface of the substrate via a grid-type light projection system that is configured to vary the amplitude of the projected light according to the position. A typical photolithographic exposure is performed using a mask or an initial mask that blocks a portion of the light so that the light pattern reaches the substrate surface. In contrast, a grid-type light projection system projects light into an array or matrix of points, where each projection point can be switched on or off, and / or its frequency or amplitude can be changed. The projected light then changes amplitude on the substrate surface depending on the position on the substrate, where the change is based on the substrate mark. Projecting light onto the substrate surface may include projecting an image onto the substrate by a laser galvanometer or a digital light processing (DLP) element. The specific projection image may be based on a predetermined mark of a characteristic of the corresponding substrate or a characteristic portion thereon. Such marks may include key size marks, thermal marks, light reflection marks, surface energy, x-rays, microwaves, and the like. The generated image can be based on a predetermined or real-time measured critical dimension (CD) mark corresponding to the substrate, or a predetermined lithographic exposure mark corresponding to the substrate, which can be the result of a grating delay or a flash. Such marks can compensate for raster scan / exposure delay and extreme ultraviolet (EUV) extreme flame flash.

It should be noted that a specific substrate mark may be identified by a previous substrate that has been processed by a specific tool, tool set, and / or process sequence. In other words, the substrate mark can be calculated in real time for the substrate being processed, or the substrate mark can be calculated / observed for a specific micro-machining process with a repeatable mark pattern. Such repeating patterns may be due to artifacts of the specific tools and / or materials used. The substrate characteristics may include optical characteristics, electrical characteristics, mechanical characteristics, structural height, film thickness, temperature, and the like.

In some embodiments, a laser galvanometer or a digital light processing element is configured to project an image of individually addressable pixels onto a substrate surface. The digital light processing element can be configured to vary the light intensity of each independently addressable pixel.

Another embodiment includes a method of processing a substrate. The substrate is set on a substrate holder in a processing chamber. A pixel-based image is projected onto the substrate surface by digitally controlling a micromirror projection element, wherein the pixel-based image is generated based on a substrate mark. The substrate may include a layer having a photoreactive agent such that the projected pixel-based image causes the photoreactive agent to chemically react to the pixel-based image based on the amplitude and / or wavelength of the projected light at a specific point location on the substrate. reaction. In other words, the pattern of the projected light may help to cause the photoreactant to produce an acid, an alkali, or other solubility conversion materials. The substrate mark may correspond to a predetermined thermal mark of the temperature on the surface of the substrate. Projecting a pixel-based image may include varying the intensity, duration, and wavelength of each projected pixel.

In another embodiment, a method of processing a substrate includes setting the substrate on a substrate holder of a semiconductor processing tool. A heating mechanism located in the substrate holder is used to heat the substrate on the substrate holder, and a digitally controlled micromirror projection element is used to project a pixel-based image onto the substrate to spatially adjust the surface temperature of the substrate. Pixel-based images vary in light amplitude based on independently addressable pixels, and the projected pixel-based images are based on the thermal signature of the substrate.

Another embodiment includes a receiving substrate having an oriented self-assembled film for a block copolymer. Digital light projection is used to project the image onto the substrate film, so that the image is modified based on the spatial projection image. The block copolymer film is coated and self-assembly is activated or initiated to assemble the copolymer into a pattern based on a spatially projected (pixel-based) image.

Specific details have been proposed in the foregoing description, such as the specific geometry of the processing system, and descriptions of various components and processes used in this specification. It should be understood, however, that the techniques in this specification may still be implemented in other embodiments that depart from these specific details, and such details are for the purpose of illustration and not limitation. The embodiments disclosed in this specification have been described with reference to the accompanying drawings. Also, for the purpose of illustration, specific quantities, materials, and configurations have been proposed to provide a thorough understanding. Nevertheless, the invention may be practiced without such specific details. Components having substantially the same functional structure are denoted by similar reference symbols, and thus any redundant description may be omitted.

Various techniques have been described as multiple separate operations to help understand various embodiments. The order of narratives should not be taken as implying that the operations must be in order. Rather, such operations need not necessarily be performed in the order in which they are presented. The operations described may be performed in a different order than the described embodiments. In additional embodiments, various additional operations may be performed, and / or operations described may be omitted.

According to the present invention, the "substrate" or "target substrate" used in this specification generally refers to the object being processed. The substrate may include any material portion or structure of a component, particularly a semiconductor or other electronic component, and may be, for example, a base substrate structure such as a semiconductor wafer, an initial shrink mask, or a base substrate structure on or over the base substrate structure. A layer (such as a thin film) of the substrate structure. Therefore, the substrate is not limited to any particular base structure, underlying or overlying layer, patterned or unpatterned, but rather means that the substrate includes any such layer or base substrate, and any layer and And / or a combination of base substrates. The description may refer to a particular type of substrate, but is for illustrative purposes only.

Those skilled in the art will also appreciate that many changes can be made to the operation of the techniques described above while still achieving the same objectives as the present invention. Such changes are intended to be within the scope of this disclosure. In this regard, the above description of the embodiments of the present invention is not intended to be limiting. Specifically, any limitations of the embodiments of the present invention are presented in the scope of the following patent applications.

101‧‧‧ parts
102‧‧‧light source
103‧‧‧light projection element
104‧‧‧ lens system
105‧‧‧ substrate
106‧‧‧ projection line
107‧‧‧ substrate alignment system
108‧‧‧Processing chamber
109‧‧‧projected image
110‧‧‧ lower level
115‧‧‧ film
130‧‧‧ substrate holder
135‧‧‧ opening
143‧‧‧ Camera

It will be easier to fully understand the various embodiments of the present invention and the many advantages that accompany it, by referring to the following "embodiments" together with the accompanying drawings. The drawings are not necessarily drawn to scale, but emphasize their characteristics, principles, and concepts.

FIG. 1 is a schematic perspective view of an exemplary image projection system for adjusting a substrate.

FIG. 2 is a schematic side view of an exemplary image projection system for adjusting a substrate.

FIG. 3 is a diagram showing an example substrate mark showing characteristics that vary in space.

FIG. 4 is a schematic side view of an exemplary image projection system for adjusting a substrate.

FIG. 5 is a diagram of an exemplary simplified key dimension or thermal mark across a cross-section of a substrate.

FIG. 6 is a diagram showing a projection image compensated for a specific key size mark.

FIG. 7 is a diagram of an exemplary simplified key dimension or thermal mark across a cross-section of a substrate.

FIG. 8 is a schematic diagram of a semiconductor processing tool.

Claims (16)

A processing system for processing a substrate, the processing system includes: a chamber designed in size and configured to receive a substrate for processing; a substrate holder that is disposed in the chamber and configured to hold the substrate An image projection system configured to project an image onto a working surface of the substrate when the substrate is located in the chamber, the image projection system uses a micro-mirror projection element to project the image; and a controller configured to control The image projection system for causing the image projection system to project a pixel-based image onto the working surface of the substrate, wherein the image projection system is configured to project the image based on a predetermined substrate mark, the predetermined substrate mark includes a corresponding The critical dimension (CD) mark of the substrate. For example, the processing system for processing a substrate according to item 1 of the application, wherein the image projection system is configured to project the image to generate an offset CD mark on the substrate for CD standardization during a subsequent etching process. For example, a processing system for processing a substrate in which the scope of patent application is item 1, wherein the image projection system is configured to project a specific image onto the working surface of the substrate by using one or more mirrors, the one or more The multi-mirror system is configured to move the laser beam across the working surface and change the amount of laser radiation directed to each pixel position of the working surface of the substrate. For example, the processing system for processing a substrate according to item 3 of the patent application, wherein the image projection system includes a laser galvanometer element. For example, the processing system for processing a substrate according to item 4 of the patent application, wherein the image projection system includes a light source configured to provide actinic radiation to a specific substrate. For example, the processing system for processing a substrate according to item 5 of the application, wherein the light source is configured to provide radiation having a wavelength of less than 400 nm. For example, the processing system for processing substrates in the first patent application range, wherein the image projection system uses a digital light processing (DLP) element or a grating light valve (GLV) element or a laser current sensing device. A measuring device to project the image onto the working surface of the substrate. For example, the processing system for processing a substrate in the first scope of the patent application, wherein each pixel projected can be changed by a parameter selected from the group consisting of light intensity and light amplitude. For example, the processing system for processing a substrate according to item 1 of the application, wherein the image projection system is configured to project a specific image onto the working surface of the substrate in less than 60 seconds. For example, the processing system for processing a substrate according to item 1 of the patent application, wherein the image projection system is configured to project a specific image onto the working surface of the substrate multiple times per second. For example, the processing system for processing a substrate according to item 1 of the patent application, wherein the intensity of each projected pixel is based on the key size mark of the substrate. For example, the processing system for processing a substrate according to item 1 of the patent application, wherein the chamber is disposed in a semiconductor processing tool, the semiconductor processing tool includes at least one module that distributes liquid on a rotating substrate, and includes At least one module of a heating mechanism for heating the substrate. For example, the processing system for processing a substrate according to item 1 of the application, wherein the chamber is disposed in a semiconductor processing tool, and the semiconductor processing tool includes: at least one module configured to distribute a photoresist on the substrate; At least one module configured to distribute developing chemicals on the substrate; and at least one module configured to bake the substrate. A processing system for processing a substrate, the processing system includes: a chamber designed in size and configured to receive a substrate for processing; a substrate holder that is disposed in the chamber and configured to hold the substrate An image projection system configured to project an image onto a working surface of the substrate when the substrate is located in the chamber, the image projection system uses a micro-mirror projection element to project the image; and a controller configured to control The image projection system, which causes the image projection system to project a pixel-based image onto the working surface of the substrate, wherein the pixel-based image is based on a substrate mark, and spatially maps the difference between the working surface of the substrate Features, and includes a critical dimension (CD) mark corresponding to the substrate. For example, a processing system for processing a substrate according to item 14 of the application, wherein the image projection system is configured to project a specific image onto the working surface of the substrate by using one or more mirrors, the one or more The multi-mirror system is configured to move a laser beam across the working surface and change the amount of laser radiation directed to each pixel position of the working surface of the substrate, and wherein the controller is configured to be generated based on a key size mark of the substrate The pixel-based image. For example, the processing system for processing a substrate according to item 14 of the application, wherein the image projection system is further configured to project the image based on a CD etching mark of a specific etching chamber.