KR20170073537A - Substrate tuning system and method using optical projection - Google Patents

Abstract

The techniques of the present invention include systems and methods for providing spatially-controlled projection or pixel-based projection of light onto a substrate for tuning various substrate properties. The predetermined pixel-based image projected onto the surface of the substrate may be based on the substrate signature. The substrate signature can spatially describe the nonuniformity across the surface of the substrate. Such non-uniformity may include energy, heat, critical dimensions, photolithographic exposure dose, and the like. Such pixel-based light projection can be used to tune various attributes of the substrate, including tuning critical dimensions, heating uniformity, evaporative cooling, and the generation of photosensitizers. By combining such pixel-based light projection with a photolithographic patterning process and / or a heating process, it improves process uniformity and reduces defects.

Description

[0001] SUBSTRATE TUNING SYSTEM AND METHOD USING OPTICAL PROJECTION [0002]

This application is related to U.S. Patent Application No. 14 / 974,974, filed on December 18, 2015, entitled "Substrate Tuning System and Method Using Optical Projection," the entirety of which is incorporated herein by reference. I argue.

This disclosure relates generally to patterning of a substrate comprising a semiconductor substrate such as a silicon wafer. The present disclosure also relates to a process comprising photolithography comprising coating and developing a film on a substrate as part of semiconductor device fabrication. This disclosure is particularly directed to controlling the dimensions and accuracy of patterned features as part of a photolithographic and patterning process.

Photolithography involves coating a substrate with a film that is sensitive to EM radiation; Exposing the film to actinic radiation of a predetermined pattern defining a latent pattern in the film; And developing (dissolving and removing) a portion of the film to reveal a physical or relief pattern on the substrate. Manufacturing tools for coating and developing substrates typically include a number of modules that can be used to add a film, add a resist, and develop a substrate.

Techniques in the present disclosure include systems and methods for spatially controlled projection of optical or electromagnetic (EM) radiation onto a substrate. The substrate can be processed by providing or heating actinic radiation to light of a wavelength ranging from 400 nm to 700 nm toward an object, ultraviolet (UV), infrared, or any wavelength of light.

The present disclosure relates to a technique for spatially changing critical dimensions and / or temperatures of a substrate, a semiconductor, a flat panel display, and a deposition system and an etching system (wet and dry) To a vacuum and non-vacuum processing system in a photovoltaic system. For example, a pixel-based projected light pattern may modify critical dimensions, lithographic exposure non-uniformity, stepper exposure lag time, and the like. For example, a pixel-based projection light pattern may modify critical dimensions, lithographic exposure non-uniformity, stepper exposure lag time, and the like.

Of course, the order of discussion of the different steps set forth herein is set forth for clarity. In general, these steps may be performed in any suitable order. Also, each of the different features, techniques, configurations, etc. in this specification may be discussed elsewhere in this disclosure, but it is intended that each concept may be implemented independently or in combination with one another. Thus, the present invention can be implemented and observed in a number of different ways.

This Summary section does not specify all embodiments of the present disclosure or claimed invention and / or progressively new aspects. Instead, this summary provides a preliminary discussion of the different embodiments and corresponding novelty points over the prior art. For further details and / or possible aspects of the present invention and the embodiments, the reader is directed to the corresponding drawings and detailed description sections of this disclosure as further discussed below.

BRIEF DESCRIPTION OF THE DRAWINGS Referring now to the following detailed description taken in conjunction with the accompanying drawings, various embodiments of the invention and many of the attendant advantages thereof will be more fully appreciated. The drawings are not necessarily drawn to scale, emphasis instead being placed upon example of features, principles, and concepts.
1 is a schematic perspective view of an exemplary image projection system for tuning a substrate.
2 is a schematic side view of an exemplary image projection system for tuning a substrate.
Figure 3 is a diagram showing an exemplary substrate signature of an attribute that is spatially altered.
Figure 4 is a schematic side view of an exemplary image projection system for tuning a substrate.
5 is a schematic diagram of an exemplary thermal signature across a substrate cross-section.
6 is a diagram showing a projection image that compensates for a predetermined thermal signature.
7 is a simplified diagram of an exemplary critical dimension or thermal signature across a substrate cross-section.
8 is a schematic diagram of a semiconductor manufacturing tool.

The techniques herein include systems and methods for providing spatially-controlled projection or pixel-based projection of light onto a substrate for tuning various substrate properties. Such pixel-based light projection may be used to tune various attributes of the substrate, including tuning of critical dimensions, heating uniformity, evaporative cooling, photolithography flare, raster delay, and generation of photosensitizers. This pixel-based light projection can achieve a significant improvement in critical dimension uniformity across the surface of the substrate. By combining such pixel-based light projection with a photolithographic patterning process, it is possible to improve process uniformity and reduce defects.

In one embodiment, a digital light processing (DLP) chip, a grating light valve (GLV), a laser galvanometer or other grid-based micro projection technology, coupled with a light source, (Using an optional lens), and modify or adjust critical dimensions, temperature, and other non-uniformities. The system may be configured to change the radiation output of the projected image. For example, a solid white image with a visible spectrum bulb projected onto the plate will heat the plate to a maximum temperature determined for that particular bulb. The temperature can be adjusted for each projected pixel by using or not using all or part of the wavelength of light generated by the light source. This technique provides very precise control sufficient to bake the semiconductor within 1 nm for a given baking process of the semiconductor. Likewise, the amount of the actinic radiation can be adjusted for each projected pixel location on the working surface of the substrate, between the case of no projective radiation and the case of full projected radiation (for a given light source) with many step differences between them have. For example, a DLP chip or laser galvanometer can project an image onto a substrate and change the amount of heat or CD adjustment at any particular point (s) of the substrate (through the production of photoreactive agent).

A projection image as disclosed herein may change the output for individual features on the substrate depending on the number of pixels supported by the selected projection system or the size of the pixel projection and the incident area. That is, the available CD control using micro-mirror projection can be flexible or fine tuned according to its maximum projected resolution. The system herein may be configured to project a given image onto a substrate as a raster scan projection in which a co-projection or a predetermined image of all indicated pixel locations is projected onto a substrate in a line-by-line manner. In one embodiment, the pixel-based light projection system is connected to a control computer such as a baking device, an exposure chamber, a distribution chamber, a hotplate, an etch chamber, and the like. The pixel-based light projection system may be selectively focused into an exposure chamber through which the substrate is aligned through the lens system. The light projected onto or onto the substrate then adjusts the desired area of the substrate, such as by generating more photo acid. There are several examples of such methods and systems. One application is to maintain temperature uniformity. Another application is to reduce or increase the critical dimension on a wafer that is fabricated as part of semiconductor manufacturing.

Figure 1 shows a schematic diagram of an exemplary substrate tuning system. The processing chamber 108 may be sized to accommodate substrates such as silicon wafers, flat panels, and the like. The processing chamber 108 may have a relatively small size (e.g., based on the size of the substrate), such as by mounting the module within a larger tool. The substrate alignment system 107 can be used to align the images on the operable area on the substrate, and these areas can be aligned within 0.1 nm. The substrate 105 may be positioned on a substrate holder. The substrate 105 can be a conventional reflective or non-reflective silicon disk having any type of coating.

The system includes a light source 102 that may be disposed within, proximate to, or remotely from the process chamber 108. The light source 102 may be any of a variety of light sources, such as a visible light source, an infrared light source, a UV light source, a bulb that produces a laser or other wavelength light. The light source feature may be adapted (or selected) to the specific substrate being processed and the specific tuning application. For some substrates, a 60 Watt (or equivalent) source may suffice, which has a DLP resolution of 1080p (1080 horizontal lines of vertical resolution and progressive scan) and a wavelength range of 400-700 nm. Other applications may require higher power and higher resolution. The light source may be selected based on the desired specific wavelength. For example, a white or infrared source may be selected for other applications, while an ultraviolet light source may be selected for a particular application. The light source selection may be based on the absorption characteristics of the particular substrate and / or film. Any resolution supported by DLP, GLV, laser galvanometer or other light projection technology may be used.

The light projection device 103 may be embodied as a laser galvanometer, a DLP chip, a grating light valve (GLV), or other light projection technique. DLP chips and GLVs are commonly used. Digital laser galvanometers are also known. The lens system 104 may optionally be used to help produce an image having a size and minimal aberration of the substrate 105 as projected onto the substrate 105. [ Projection line 106 displays an image field or video that is projected toward substrate 105 by co-projection or raster-based projection. The video or image may be designed based on dynamic feedback and / or predicted CD values from a metrology device configured to identify differences in the CD over the substrate. An item 101 represents an exemplary location on a substrate 105 having a critical dimension that is different than other portions of the substrate. The projected image 109 projects light in the shape of one of the items 101. Once the item 101 has large CD values relative to the rest of the surface area of the substrate 105, the projected image 109 can be used to increase the production of a photo-active agent, , It is possible to increase the actinic radiation projected on these areas to make the CD value uniform across the entire surface of the substrate 105. [

Thus, such a system in the present specification combines a fine and rough control system for fine control of critical dimensions. Accordingly, all positions at which the projected pixel can be turned on or off are regions that can perform fine tuning for heat, temperature, CD correction, and photo reactivity.

5 is a simplified graph showing exemplary CD signatures for a given substrate. This can be a CD signature across the cross section of the substrate. In this exemplary CD signature, there are 19 point positions for measuring the relative difference in the CD. The top of this graph represents a relatively large CD deviation or CD value. The bottom of the graph can also indicate the relative difference in CD. The bottom of the graph can represent very small CDs, while the top of the graph represents very large CDs. There is a CD deviation across the substrate, and the CD deviation along the plane position is one embodiment of the thermal signature.

Fig. 6 is a diagram showing a projected image for correcting the CD deviation from the CD signature shown in Fig. 5; Fig. In other words, the projected image compensates for the CD signature with variation. For example, points 1, 9, 10, 17, and 18 from the CD signature of FIG. 5 have a relatively small CD. The projected image of Figure 6 does not have the projected light at these locations, thereby preventing the photoreactive agent from increasing. Point positions 2 and 12 from the CD signature in FIG. 5 have relatively large CDs, and in the image projection of FIG. 6, these point positions are the total light / radiation exposure that results in the maximum generation of a photoreactive agent from a given light source ≪ / RTI > The other point positions are exemplified by varying the shades of the various gray, which represent gentle variation of the CD values, by the variable light projection as well. Figure 7 shows a modified or modified CD signature resulting from the projected image of Figure 6 applied to the CD signature of Figure 5; Compared to the CD signature from FIG. 5, the maximum CD values are modified such that the CD deviation is substantially small. It is also possible to realize a modified CD signature after any intermediate step of baking and / or developing to remove the material from the CD that is larger than desired.

The substrate signature illustrated in Figure 5 is a simplified linear signature. The substrate is typically planar and accordingly the uniformity variation can be changed based on the plane or X, Y, position on the substrate. 3 is a diagram illustrating exemplary critical dimension signatures. This critical dimension signature is mapped as a point location on the surface of a given substrate, such as a wafer, used in a microfabrication process. Several points on the CD signature example vary in degree of darkness or lightness. These relative differences in point location on the CD signature example represent relative differences in CD uniformity. For example, a completely dark point position may represent a region with a very small CD, whereas a fully bright or lighter point position may represent a region with a very large CD. This CD signature can be generated based on observed and / or measured dimensions.

In addition, this substrate signature example in FIG. 3 may indicate that a given projection of light can be viewed as on a substrate being processed. The light source may be UV or infrared, and FIG. 3 may show how the projected energy system looks or how the cumulative effect of the energy signature looks. The deviation of the arm of the hatching pattern may indicate light intensity, amplitude and / or frequency. Thus, the point position on the substrate surface that receives the projected light at full intensity may include a bright region or a white region in the example. Likewise, point locations with less white space may have medium or partial intensity of light projected at these locations. The point locations shown as black squares in this example may not receive light or may be relatively less exposed. The substrate signature may vary in visual indication based on the type of unevenness or signature. For example, the CD signature may appear as a signature with a portion of the perceptible line corresponding to the scribe lanes. The substrate signature indicative of raster delay non-uniformity may indicate the progress of the stepper / scanner as determined over the substrate surface. The substrate signature for thermal non-uniformity may have a circular pattern and may indicate a difference in the heat zone interface.

FIG. 4 is a view similar to FIG. 1, illustrating an exemplary embodiment of an optical projection tuning system for tuning a substrate 105. The substrate 105 includes a film 115 that can be a photoresist film as well as an underlying layer 110 that can be a hard mask or other patterning or memory layer for pattern transfer can do. A light projection device 103 or an associated controller may receive a pixel based image for projection onto a substrate 1050. The projection of this pixel based image is shown as a projected image 109. The substrate 105 In place of the mask-based light projection used in photolithographic exposure, a pixel-based image projection is used. During projection, the projected image is projected in real time feedback or in response to other tuning objects And may be changed or changed.

The particular image or video being projected may be based on one or more sensors that can collect data prior to or during processing for static adjustment. In the feedback loop, a given sensor or sensor array can collect data (such as a CD signature) and then send the collected data to the controller. The controller can then calculate the images that are floated on the substrate based on the collected data and / or whether it is necessary heat or optical correction (CD correction). Thermal signature feedback can be implemented using a proportional-integral-derivative controller (PID controller). The projected image can be changed based on any fluctuation across the substrate, such as oscillation from the center to the edge.

The light intensity or amplitude can be adjusted based on the type of material on the surface of the substrate. Some polymers may have low reflectance, but other materials such as silicon and metals may have maximum reflectance values. For one particular exemplary material, copper, the reflectivity can be from 45% to 99%. Nevertheless, when light enters the copper, the surface of the copper will be heated. Thus, the teachings herein may be applied to most substrate materials.

2 is a side diagram of an exemplary system for improving substrate processing. The substrate 105 may be embodied as a heat chuck or placed on a substrate holder 130, which may include a heat chuck. (Facing the substrate side to be processed), a laser galvanometer, a DLP projector, or the like, can be positioned to project an image on the substrate surface as part of the light projection device 103. [ The position of the projector may be changed based on the space availabity in the predetermined chamber. For example, multiple heating modules of a micro-fabrication tool are relatively short. In these embodiments, a plurality of apertures 135 and / or a lens system may be used to project an image in any limited vertical space above the substrate. Although exemplary height and width measurements are shown, this is non-limiting and is intended to illustrate only one particular embodiment.

A dedicated purpose-built light projection system can be fabricated for use in substrate tuning or heating modules and the like. Alternatively, conventional laser galvanometers and DLP projectors may be used.

Other embodiments can project light onto a single substrate using lamps of different wavelengths. Both of these lamps may contribute to light projection, or may be selectively activated. Similarly, a plurality of projectors may be used for each substrate processing module. In another embodiment, the light projection may have a frequency based output for fine tuning, such as a 3D graphic or the like. In addition to the image-based light projector, a camera 143 or other metering device that identifies a given CD signature in real time for dynamic adjustment of the CD signature based on the projected image may be positioned in view of the substrate 105. In another embodiment, a sensor array may be installed and connected to the feedback loop of the PID controller.

Projecting a thermal signature based image onto a substrate positioned on a hot plate is merely an embodiment of the systems and methods herein. There are a number of additional applications and embodiments for processing substrates at various stages of semiconductor manufacturing. Therefore, the application is not limited to lithography. In other embodiments, a projected light-heat technique may be used during coating of the substrate (e.g., coating with a photoresist). Projecting an image onto the spinning substrate during coating of the liquid can help alleviate the impact of evaporative cooling. An advantage of this configuration is that a lower dispense volume is required while providing good coating uniformity. If there is an impermeable object in the spin chamber that interferes with the projection of light, at least light can be projected onto the segment of the substrate, which, due to the rotation of the substrate, is essentially frequency-based projection For an embodiment that can be illuminated at a fixed point in time).

In another embodiment, optical image projection can be used for both post application bake (PAB) and post exposure bake (PEB). Optical image projection can be used for complex complex edge bead removal (EBR), and regions that can be "drawn" projected for EBR can be cleared out. Optical image projection can be used to define areas for directed self-assembly (DSA) of the block copolymer as a way to print the array. That is, the exposure may be boosted enough to print the directional auto-assembly into the array, and the remaining area is not exposed to auto-assemble the block copolymer without the use of a cut mask, Save the process steps in the micro-fabrication process.

Embodiments having a wet or dry substrate cleaning system may be used herein. With a wet cleaning system, the projected light image can help center-to-edge temperature uniformity. In some processes in which liquid is dispensed onto a spinning substrate, the thickness of the film is greater toward the center of the substrate than to the edge. However, the techniques herein may also help in radial temperature uniformity. Depending on the location of the dispense nozzle and the dispense arm, the image projected in the dispensing chamber may be essentially a partial image (e.g., a pie-shaped image) . Nonetheless, it may be effective to perform projection only on a part of the substrate, especially on the spinning substrate, since the entire surface may be irradiated or passed through the projected image. Projecting an image using UV light is a spatial light enhancement technique that can be combined with, for example, a UV lamp that directly provides most of the irradiation, further contributing to the reactivity of the chemical, The reactivity can be improved. For UV light enhancement and projection, optical techniques that enable UV transmission should be chosen, such as quartz, calcium fluoride, or other transparent conductive media. For example, in many temperature increase and chemically amplify embodiments, the amount of increase is typically less than 15% of the primary heat or actinic radiation treatment. For example, a given substrate with a photoresist film is exposed in a mask-based pattern by a scanner or a stepper tool. With this photolithographic exposure, the light dosage of light is essentially the same at each die position. In the present specification, an embodiment in which the amount of exposure is increased in a relatively small amount and in a different amount depending on the point position of the substrate can be used.

As will be apparent, there are many different embodiments for the systems and methods disclosed herein.

One embodiment includes a system or apparatus for treating a substrate. The system includes a chamber sized and configured to receive a processing substrate; And a substrate holder positioned within the chamber and configured to hold the substrate. The system includes an image projection system configured to project an image onto an upper surface of the substrate (i.e., a work surface or a surface to be processed) when the substrate is in the chamber. An image projection system projects an image using a micro-mirror projection device. The micro-mirror projection device may include, for example, a controllable mirror that reflects the laser beam or an array of micro-scopic mirrors that corresponds to the pixels of the image being projected. The system includes a controller configured to control the image projection system and to cause the image projection system to project a pixel-based image on a working surface of the substrate. The image projection system includes a light source and may utilize a pixel substrate projection system. Each projected pixel can be changed by a parameter selected from the group consisting of optical wavelength, light intensity, optical frequency and optical amplitude. The image projection system may be configured to project an image based on a predetermined substrate signature, which may be a pixel based representation that changes surface properties (heat, exposure dose, critical dimension deviation). The light source may be configured to provide actinic radiation to a given substrate. The light source may be configured to provide radiation at a wavelength of less than 400 nm, such as ultraviolet radiation. A defined light source may be selected to have a particular spectral line (s) based on the particular radiation sensitive film on the substrate. Projections based on a predetermined substrate signature may include a substrate signature that spatially maps different features of the substrate surface.

In another embodiment, the defined projected image may be based on both the substrate signature and the CD etch signature of a defined / specific etch chamber. The CD etch signature of a given etch chamber indicates or recognizes various etch non-uniformities resulting from a given etch pattern transfer process. For example, in a plasma-based dry etch chamber, depending on the particular type of plasma reactor, there is typically an etch non-uniformity across the surface of the substrate. For example, the plasma may have a center-to-edge density deviation and / or an azimuth density deviation. Therefore, in some regions of the substrate, more or less etching may occur compared to other regions. As a result, an etched substrate is obtained in which the transferred pattern has CD non-uniformity (even when the etching mask has a uniform CD). The systems and methods herein can compensate for such etch non-uniformity. By placing the projected image on a pre-bias CD (not shown) that enables CD standardization in subsequent etching processes, by making both a data identifying the manner in which a given etching chamber etches the substrate and a substrate signature (incoming CD signature) pre-biased CD). By way of example, and not by way of limitation, where a given etch system etches more the center portion of the substrate and less etches the edge portion of the substrate, the projected image is larger (e.g., Or smaller) and to bias the CD. And, when etching the substrate, the incoming CD already considers the etching irregularity so that the resulting etching yields a uniform CD over the substrate.

A substrate such as a semiconductor wafer is usually disposed or mounted on its back surface (with the back surface facing the ground), whereas processes such as coating, baking, lithography, development, etching and the like are performed on the opposite side. Therefore, the work surface is generally directed upward, so that the "top surface" is the opposite side of the back surface. And the upper surface is the surface opposite to the back surface, in other words, the working surface. In some manufacturing processes such as electroplating, the substrate can be held vertically. In this vertical configuration, the work surface faces the side and, therefore, the top surface is also directed to the side, but is nonetheless the top surface.

The processing system may also include a CD metrology system configured to identify a pixel based CD signature of the substrate. An image projection system may project an image onto a work surface of a substrate using a laser galvanometer, a digital light processing (DLP) device or a grating light valve (GLV) device. Any image projection device capable of adjusting the light intensity according to the position can be used. The system may include a dispensing system configured to dispense the liquid composition on a surface of the substrate within the same processing chamber. The chamber may be positioned within a semiconductor manufacturing tool comprising at least one module for dispensing liquid onto a spinning substrate, the tool comprising at least one module having a heating mechanism for heating the substrate. Such tools are often known as coater / developer. In another embodiment, as shown in Figure 8, the chamber comprises at least one module configured to dispense photoresist on the substrate, at least one module configured to dispense the developer chemistry on the substrate, At least one module configured and at least one module configured to bake the substrate. The other system is. A micro-mirror projection system or a scanner / stepper including a pixel based system. This embodiment may be comprised of a process chamber separate from the lithographic exposure stack and positioned to project an image onto the substrate surface during lithographic exposure.

In another embodiment, the image projection system is configured to project a given image on a work surface of the wafer in a line-by-line manner. In another embodiment, an image projection system includes at least one mirror configured to move a laser beam across a work surface to vary the amount of laser radiation directed at each pixel location of the work surface of the substrate, And the like. For example, such an image projection system may include using a laser galvanometer. The image projection system may be configured to project a predetermined image onto the working surface of the substrate, for example, within 30 seconds. Alternatively, the determined image may be projected multiple times per second on the working surface of the substrate. For example, laser galvanometers have raster scanning or raster-based projection mechanisms. Such raster-based projection may include projecting the laser beam across the substrate surface in a line-by-line manner. The projection speed may range from about several hundreds of times per second to once every several seconds or more. As the laser galvanometer moves a defined laser beam or UV light beam across the substrate, the intensity of the laser beam changes from zero to 100% at each pixel location or resolution point on the work surface of the substrate . For example, an acousto-optic modulator can be used to adjust the light intensity for each point location on a given substrate surface. Alternatively, the dwell time of the projected radiation at a given pixel location may be varied to provide the desired dose of light.

Another embodiment includes a method of treating a substrate. The method includes positioning the substrate on a substrate holder. Positioning the substrate includes receiving the substrate within a module of the semiconductor manufacturing tool. The semiconductor manufacturing tool may include at least one module for dispensing photoresist on a substrate. Such a manufacturing tool may include a substrate handling mechanism for automatically moving the substrate of the processing module. Light is then projected onto the surface of the substrate via a grid-based optical projection system configured to vary the amplitude of the projected light according to position. Conventional photolithographic exposure is performed using a mask or a reticle that blocks a portion of the light so that the pattern of light reaches the surface of the substrate. Alternatively, the grid-based optical projection system projects light as an array or matrix of points at which each projected point can be switched on or off and / or the frequency or amplitude can be changed. The projected light is then changed by the amplitude on the surface of the substrate in accordance with the position of the varying substrate based on the substrate signature. The step of projecting light onto the surface of the substrate may include projecting the image onto a substrate via a laser galvanometer or a digital light processing (DLP) device. The particular projected image may be based on a predetermined signature of the attribute corresponding to the signature on the substrate or substrate. Such signatures may include critical dimension signatures, thermal signatures, light reflection signatures, surface energies, x-rays, microwaves, and the like. The generated image may be based on a predetermined or real time measured critical dimension signature corresponding to a predetermined lithographic exposure signature or substrate corresponding to the substrate, which may be a raster delay or a result of a flare. These signatures can compensate for extreme ultraviolet (EUV) flare and raster scan / exposure delays.

The determined substrate signature can be identified with specific tools, tool sets, and previous substrates processed by the process sequence. In other words, the substrate signature can be calculated in real time for the substrate to be processed, or can be calculated / observed from a repetitive pattern of signatures for a defined micro-fabrication process. This repetitive pattern may be due to the artifacts of the particular tool and / or materials used. The substrate properties may include optical properties, electrical properties, mechanical properties, structural height, film thickness, temperature, and the like.

In some embodiments, a laser galvanometer or digital optical processing device is configured to project an image of independently addressable pixels on a surface of a substrate. The digital optical processing device may be configured to change the light intensity of each independently addressable pixel.

Another embodiment includes a method of treating a substrate. The substrate is positioned on the substrate holder in the process chamber. A pixel-based image is projected onto the surface of the substrate via a digitally controlled micromirror projection device, and a pixel-based image is generated based on the substrate signature. The substrate may include a layer having a photoreactive agent such that the projected pixel-based image causes the photoreactive agent to chemically react to the pixel-based image based on the amplitude and / or wavelength of the light projected at a predetermined point location on the substrate . In other words, the pattern of the projected light can help the photoreactive agent to produce an acid, base, or other soluble shifting material. The substrate signature may correspond to a predetermined thermal signature of the temperature on the substrate surface. The step of projecting the pixel-based image may include varying the light intensity, duration, and wavelength by each projected pixel.

In another embodiment, a method of processing a substrate includes positioning a substrate on a substrate holder of a semiconductor manufacturing tool; Heating the substrate on the substrate holder using a heating mechanism located within the substrate holder; And spatially adjusting the surface temperature of the substrate by projecting the pixel-based image onto the substrate using a digitally controlled micro-mirror projection device. The pixel-based image alters the light amplitude by the individually addressable pixels, and the projected pixel-based image is based on the heat signature of the substrate.

Another embodiment includes the step of receiving a substrate having a film used for directional automatic assembly of the block copolymer. The image is projected onto the substrate film using digital light projection so that the image modifies the film according to the spatially projected image. The film of the block copolymer is asked to assemble the pattern based on the spatially projected (pixel-based) image of the copolymer, and auto-assembly is activated or initiated.

In the foregoing description, specific details have been set forth, such as specific geometric shapes of the processing system and descriptions of various components and processes, as used herein. It should be understood, however, that the techniques herein may be practiced in other embodiments that depart from these specific details, and that these details are for purposes of explanation and not limitation. The embodiments described herein are described with reference to the accompanying drawings. Likewise, for purposes of explanation, certain numbers, materials, and configurations are set forth to provide a thorough understanding. Nevertheless, embodiments may be practiced without these specific details. Components having substantially the same functional configuration are indicated by like reference numerals, and thus all unnecessary explanations can be omitted.

Various techniques have been described as a number of discontinuous operations to aid understanding of various embodiments. The order of description should not be construed to imply that these operations are necessarily order-dependent. In practice, these operations need not be performed in the order presented. The described operations may be performed in a different order than the described embodiments. Various additional operations may be performed, and / or the described operations may be omitted in further embodiments.

As used herein, the term "substrate" or "target substrate" generally refers to an object to be treated in accordance with the present invention. The substrate may comprise any significant portion or structure of a device, particularly a semiconductor or other electronic device, and may be a substrate, such as a layer on or on a base substrate structure, such as a semiconductor wafer, reticle, Substrate structure. Thus, the substrate is not limited to any particular base structure, underlying layer, or overlying layer, patterned or unpatterned, but rather, any such layer or base structure, and layer and / or base structure As used herein. Although this specification may refer to a particular type of substrate, this is for illustrative purposes only.

Those skilled in the art will also appreciate that many modifications may be made to the operation of the above-described techniques while still achieving the same objects of the present invention. Such variations are intended to be included within the scope of the present disclosure. Accordingly, the foregoing description of the embodiments of the present invention is not intended to be exhaustive. Rather, all the limitations of the embodiments of the present invention are set forth in the following claims.

Claims (17)

A processing system for processing a substrate, the processing system comprising:
A chamber sized and configured to receive a processing substrate;
A substrate holder positioned within the chamber and configured to hold the substrate;
An image projection system configured to project an image onto a working surface of the substrate when the substrate is in the chamber; And
A controller configured to control the image projection system and to cause the image projection system to project a pixel-based image on a working surface of the substrate;
Lt; / RTI >
Wherein the image projection system projects an image using a micro-mirror projection apparatus, the image projection system being configured to project an image based on a predetermined substrate signature, the image projection system comprising: Wherein the image is projected on a line-by-line basis. 2. The substrate processing system of claim 1, wherein the image projection system is configured to project an image based further on a CD etch signature of a defined etch chamber. 3. The substrate processing system of claim 2, wherein the image projection system is configured to project an image to create a CD signature biased onto the substrate for CD standardization during a subsequent etching process. 2. The method of claim 1, wherein the image projection system further comprises at least one mirror configured to move the laser beam across the working surface to change the amount of laser radiation directed to each pixel location of the working surface of the substrate, And to project a predetermined image on the surface. 5. The substrate processing system of claim 4, wherein the image projection system comprises a laser galvanometer device. 6. The substrate processing system of claim 5, wherein the image projection system comprises a light source configured to provide actinic radiation to a defined substrate. 7. The substrate processing system of claim 6, wherein the light source is configured to provide radiation at a wavelength of less than 400 nm. 2. The method of claim 1, wherein the image projection system projects an image onto a work surface of the substrate using a digital light processing (DLP) device, a grating light valve (GLV) system. 2. The substrate processing system of claim 1, wherein each projected pixel can be changed by a parameter selected from the group consisting of light intensity and light amplitude. 2. The substrate processing system of claim 1, wherein the image projection system is configured to project a predetermined image on a working surface of the substrate in less than 60 seconds. 2. The substrate processing system of claim 1, wherein the image projection system is configured to project a predetermined image onto a work surface of the substrate a plurality of times each second. 2. The substrate processing system of claim 1, wherein the intensity of each projected pixel is based on a critical dimension signature of the substrate. 2. The substrate processing system of claim 1, wherein the chamber is positioned within a semiconductor manufacturing tool that includes at least one module for dispensing liquid onto a spinning substrate. 2. The apparatus of claim 1, wherein the chamber is positioned within a semiconductor manufacturing tool,
At least one module configured to dispense photoresist on the substrate;
At least one module configured to dispense development chemicals on the substrate;
At least one module configured to bake the substrate
The substrate processing system comprising: A processing system for processing a substrate, the processing system comprising:
A chamber sized and configured to receive a processing substrate;
A substrate holder positioned within the chamber and configured to hold the substrate;
An image projection system configured to project an image onto a working surface of the substrate when the substrate is in the chamber; And
A controller configured to control the image projection system, the controller configured to cause the image projection system to project a pixel-based image on a working surface of the substrate, the controller comprising: A controller based on signature
Lt; / RTI >
Wherein the image projection system projects an image using a micro-mirror projection apparatus, the image projection system moves the laser beam across the working surface to change the amount of laser radiation directed to each pixel location of the working surface of the substrate Wherein the at least one mirror is configured to project an image onto a working surface of the substrate. 16. The substrate processing system of claim 15, wherein the controller is configured to generate a pixel-based image based on a critical dimension signature of the substrate. 16. The substrate processing system of claim 15, wherein the image projection system is configured to project an image based on a CD etch signature of a particular etch chamber.

Images