JP2008024790A - 蛍光体、その製造方法、および発光装置 - Google Patents
蛍光体、その製造方法、および発光装置 Download PDFInfo
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- JP2008024790A JP2008024790A JP2006197293A JP2006197293A JP2008024790A JP 2008024790 A JP2008024790 A JP 2008024790A JP 2006197293 A JP2006197293 A JP 2006197293A JP 2006197293 A JP2006197293 A JP 2006197293A JP 2008024790 A JP2008024790 A JP 2008024790A
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- 239000000126 substance Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000295 emission spectrum Methods 0.000 claims abstract description 70
- 239000000203 mixture Substances 0.000 claims abstract description 28
- 239000012190 activator Substances 0.000 claims abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 208
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 61
- 229910052771 Terbium Inorganic materials 0.000 claims description 32
- 229910052693 Europium Inorganic materials 0.000 claims description 28
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical group [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 24
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- -1 silicate compound Chemical class 0.000 claims description 6
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 18
- 239000011575 calcium Substances 0.000 description 37
- 230000005284 excitation Effects 0.000 description 26
- 239000010410 layer Substances 0.000 description 25
- 229920005989 resin Polymers 0.000 description 25
- 239000011347 resin Substances 0.000 description 25
- 238000009877 rendering Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 16
- 229910052712 strontium Inorganic materials 0.000 description 15
- 229910052791 calcium Inorganic materials 0.000 description 14
- 238000001228 spectrum Methods 0.000 description 14
- 239000000843 powder Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 229910052788 barium Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000004020 luminiscence type Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000695 excitation spectrum Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 235000019270 ammonium chloride Nutrition 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000004110 Zinc silicate Substances 0.000 description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000001649 bromium compounds Chemical class 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006690 co-activation Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000004694 iodide salts Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 2
- 235000019352 zinc silicate Nutrition 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- UAHZTKVCYHJBJQ-UHFFFAOYSA-N [P].S=O Chemical compound [P].S=O UAHZTKVCYHJBJQ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001513 alkali metal bromide Inorganic materials 0.000 description 1
- 229910001514 alkali metal chloride Inorganic materials 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910001516 alkali metal iodide Inorganic materials 0.000 description 1
- 229910001616 alkaline earth metal bromide Inorganic materials 0.000 description 1
- 229910001617 alkaline earth metal chloride Inorganic materials 0.000 description 1
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 description 1
- 229910001619 alkaline earth metal iodide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- HJUFTIJOISQSKQ-UHFFFAOYSA-N fenoxycarb Chemical compound C1=CC(OCCNC(=O)OCC)=CC=C1OC1=CC=CC=C1 HJUFTIJOISQSKQ-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-VENIDDJXSA-N lead-201 Chemical compound [201Pb] WABPQHHGFIMREM-VENIDDJXSA-N 0.000 description 1
- WABPQHHGFIMREM-FTXFMUIASA-N lead-202 Chemical compound [202Pb] WABPQHHGFIMREM-FTXFMUIASA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- IBIRZFNPWYRWOG-UHFFFAOYSA-N phosphane;phosphoric acid Chemical compound P.OP(O)(O)=O IBIRZFNPWYRWOG-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/77922—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
【解決手段】 主結晶相と付活剤とを含有する単一組成の物質からなる蛍光体である。370nm以上460nm以下の領域に発光ピークを有する光で励起した際、540nm以上550nm以下の波長領域における狭帯域発光スペクトルと、500nm以上600nm以下の波長領域における広帯域発光スペクトルとを示すことを特徴とする。
【選択図】 なし
Description
ここで、a1、b1、c1およびv1、w1は、下記数式で表わされる関係を満たす値である。
0≦b1/(1−v1−w1)≦1 (3); 0≦c1/(1−v1−w1)≦1 (4)
0<v1≦0.15 (5); 0<w1≦0.05 (6)
本発明の他の態様にかかる蛍光体は、下記一般式(B)で表わされる組成を有する化合物であることを特徴とする。
ここで、MはLi,Na,K,RbおよびCsから選択される少なくとも1種であり、a2、b2、c2およびv2、w2は、下記数式で表わされる関係を満たす値である。
0≦a2/(1−2v2−w2)≦1 (8)
0≦b2/(1−2v2−w2)≦1 (9)
0≦c2/(1−2v2−w2)≦1 (10)
0<v2≦0.15 (11), 0<w2≦0.05 (12)
本発明の一態様にかかる蛍光体の製造方法は、前述の蛍光体の製造方法であって、
混合原料を容器に収容し、N2/H2またはAr/H2の還元性雰囲気中で熱処理して一次焼成品を得る工程と、
前記一次焼成品を粉砕して容器に収容する工程と、
前記粉砕された一次焼成品が収容された容器を炉内に配置し、不活性ガスで置換する工程と、
前記一次焼成品を、水素濃度5%以上100%未満のN2/H2またはAr/H2の還元性雰囲気中で熱処理して、二次焼成品を得る工程
を具備することを特徴とする。
前記発光素子から発せられる光を受ける蛍光体を含む蛍光体層とを具備し、
前記蛍光体の少なくとも一部は、前述の蛍光体であることを特徴とする。
上記一般式(A)中、a1、b1、c1、v1、およびw1は、以下の数式で表わされる関係を満たす値である。
0≦b1/(1−v1−w1)≦1 (3); 0≦c1/(1−v1−w1)≦1 (4)
0<v1≦0.15 (5); 0<w1≦0.05 (6)
正ケイ酸アルカリ土類化合物中においては、SrとCaとBaとは、完全に固溶した状態で存在する。この条件と、数式(1)、(5)および(6)とによって、アルカリ土類金属含有量に関する数値a1,b1およびc1の範囲が決定される。すなわち、数式(2)、(3)、および(4)は、こうした条件によって導き出される。
MはLi,Na,K,RbおよびCsから選択される少なくとも1種である。また、a2、b2、c2、v2、およびw2は、下記数式で表わされる関係を満たす値である。
0≦a2/(1−2v2−w2)≦1 (8)
0≦b2/(1−2v2−w2)≦1 (9)
0≦c2/(1−2v2−w2)≦1 (10)
0<v2≦0.15 (11), 0<w2≦0.05 (12)
各元素の含有量を分析するにあたっては、まず、合成された蛍光体をアルカリ融解する。これを、例えばエスアイアイ・ナノテクノロジー(株)SPS1200AR等により内部標準のICP発光分光法にて分析を行なう。こうして、前記一般式(B)で表わされる蛍光体の組成が得られる。
(Sr0.885,Ba0.06,Tb0.05,Eu0.005)2SiO4蛍光体を調製した。原料粉末としては、SrCO3粉末55.8g、BaCO3粉末5.0g、SiO2粉末13.5g、Tb4O7粉末4.0gおよびEu2O3粉末0.4gを用意した。さらに、結晶成長剤として、0.6gのNH4Clを添加して、ボールミルで均一に混合した。
204…反射面; 205…凹部; 206…発光チップ
207…ボンディングワイヤ; 208…ボンディングワイヤ; 209…蛍光層
210…蛍光体; 211…樹脂層;
100…樹脂ステム; 101…リード
102…リード; 103…樹脂部; 104…反射面; 105…開口部
106E…ツェナー・ダイオード; 106F…半導体発光素子; 107…接着剤
109…ボンディングワイヤ; 110…蛍光体; 111…封止体
122…バッファ層; 123…n型コンタクト層; 124…活性層
125…p型クラッド層; 126…p型コンタクト層; 127…n側電極
128…p側電極; 132…n型クラッド層; 138…透光性基板
142…バンプ; 144…バンプ; 150…n型シリコン基板
152…p型領域; 154…p側電極; 156…n側電極; 158…n側電極
160…配線層; 162…高反射膜
50、50’…リード; 51…半導体発光素子; 52…マウント材
53…ボンディングワイヤ; 54…プレディップ材; 55…キャスティング材。
Claims (10)
- 主結晶相と付活剤とを含有する単一組成の物質からなり、370nm以上460nm以下の領域に主発光ピークを有する光で励起した際、540nm以上550nm以下の波長領域における狭帯域発光スペクトルと、500nm以上600nm以下の波長領域における広帯域発光スペクトルとを示すことを特徴とする蛍光体。
- 正ケイ酸アルカリ土類化合物と付活剤とを含有する物質からなり、370nm以上460nm以下の領域に主発光ピークを有する光で励起した際、540nm以上550nm以下の波長領域における狭帯域発光スペクトルと、500nm以上600nm以下の波長領域における広帯域発光スペクトルとを示すことを特徴とする蛍光体。
- 前記付活剤はテルビウムおよびユーロピウムであり、前記540nm以上550nm以下の波長領域の狭帯域発光スペクトルは、前記テルビウムに起因する発光であることを特徴とする請求項1または2に記載の蛍光体。
- 下記一般式(A)で表わされる組成を有する化合物であることを特徴とする蛍光体。
(Sra1,Bab1,Cac1,Tbv1,Euw1)2SiO4 (A)
ここで、a1、b1、c1およびv1、w1は、下記数式で表わされる関係を満たす値である。
a1+b1+c1+v1+w1=1 (1); 0≦a1/(1−v1−w1)≦1 (2)
0≦b1/(1−v1−w1)≦1 (3); 0≦c1/(1−v1−w1)≦1 (4)
0<v1≦0.15 (5); 0<w1≦0.05 (6) - 前記一般式(A)におけるb1,c1,v1、w1は、以下の範囲内であることを特徴とする請求項4に記載の蛍光体。
0≦b1/(1−v1−w1)≦0.2 (3a)
0≦c1/(1−v1−w1)≦0.9 (4a)
0<v1≦0.1 (5a); 0<w1≦0.01 (6a) - 下記一般式(B)で表わされる組成を有する化合物であることを特徴とする蛍光体。
(Sra2,Bab2,Cac2,Tbv2,Euw2,Mv2)2SiO4 (B)
ここで、MはLi,Na,K,RbおよびCsから選択される少なくとも1種であり、a2、b2、c2およびv2、w2は、下記数式で表わされる関係を満たす値である。
a2+b2+c2+2v2+w2=1 (7)
0≦a2/(1−2v2−w2)≦1 (8)
0≦b2/(1−2v2−w2)≦1 (9)
0≦c2/(1−2v2−w2)≦1 (10)
0<v2≦0.15 (11), 0<w2≦0.05 (12) - 請求項1乃至6のいずれか1項に記載の蛍光体の製造方法であって、
混合原料を容器に収容し、N2/H2またはAr/H2の還元性雰囲気中で熱処理して一次焼成品を得る工程と、
前記一次焼成品を粉砕して容器に収容する工程と、
前記粉砕された一次焼成品が収容された容器を炉内に配置し、不活性ガスで置換する工程と、
前記一次焼成品を、水素濃度5%以上100%未満のN2/H2またはAr/H2の還元性雰囲気中で熱処理して、二次焼成品を得る工程
を具備することを特徴とする蛍光体の製造方法。 - 370nm以上460nm以下の波長領域に主発光ピークを有する光を発する発光素子と、
前記発光素子から発せられる光を受ける蛍光体を含む蛍光体層とを具備し、
前記蛍光体の少なくとも一部は、請求項1乃至6のいずれか1項に記載の蛍光体であることを特徴とする発光装置。 - 前記蛍光体層は、580nm以上680nm以下の領域に主発光ピークを有する蛍光体を含むことを特徴とする請求項8に記載の発光装置。
- 前記蛍光体層は、430nm以上510nm以下の領域に主発光ピークを有する蛍光体を含むことを特徴とする請求項8または9に記載の発光装置。
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US11/626,229 US7498736B2 (en) | 2006-07-19 | 2007-01-23 | Luminescent material |
DE102007011348A DE102007011348A1 (de) | 2006-07-19 | 2007-03-08 | Lumineszenzmaterial |
CN2007101370557A CN101108965B (zh) | 2006-07-19 | 2007-07-19 | 荧光材料、其制造方法及发光装置 |
US12/356,930 US20090127507A1 (en) | 2006-07-19 | 2009-01-21 | Luminescent material |
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Cited By (4)
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JP2008024791A (ja) * | 2006-07-19 | 2008-02-07 | Toshiba Corp | 蛍光体、蛍光体の製造方法および発光装置 |
JP2009211881A (ja) * | 2008-03-03 | 2009-09-17 | C I Kasei Co Ltd | 間接照明器具 |
JP2013006920A (ja) * | 2011-06-23 | 2013-01-10 | Nihon Univ | 蛍光体、及び蛍光体の製造方法 |
JP2013123057A (ja) * | 2011-12-12 | 2013-06-20 | Lg Innotek Co Ltd | 発光素子パッケージ |
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JP4314279B2 (ja) * | 2007-02-01 | 2009-08-12 | 株式会社東芝 | 蛍光体、その製造方法、および発光装置 |
JP5270862B2 (ja) * | 2007-05-15 | 2013-08-21 | 信越石英株式会社 | 銅含有シリカガラス及びその製造方法、並びにそれを用いたキセノンフラッシュランプ |
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JPWO2015037715A1 (ja) * | 2013-09-13 | 2017-03-02 | 宇部興産株式会社 | ケイ酸塩蛍光体の製造方法 |
CN103594608B (zh) * | 2013-10-31 | 2016-05-18 | 深圳市聚飞光电股份有限公司 | 一种白光led、背光模组及白光led的制作方法 |
TWI631738B (zh) * | 2017-07-17 | 2018-08-01 | 聯勝光電股份有限公司 | 光電半導體裝置及其製造方法 |
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JP3756930B2 (ja) * | 2001-09-03 | 2006-03-22 | 松下電器産業株式会社 | 半導体発光デバイスの製造方法 |
US6982045B2 (en) * | 2003-05-17 | 2006-01-03 | Phosphortech Corporation | Light emitting device having silicate fluorescent phosphor |
JP4363215B2 (ja) * | 2004-02-19 | 2009-11-11 | 日亜化学工業株式会社 | アルカリ土類金属アルミン酸塩蛍光体及びそれを用いた発光装置 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008024791A (ja) * | 2006-07-19 | 2008-02-07 | Toshiba Corp | 蛍光体、蛍光体の製造方法および発光装置 |
JP2009211881A (ja) * | 2008-03-03 | 2009-09-17 | C I Kasei Co Ltd | 間接照明器具 |
JP2013006920A (ja) * | 2011-06-23 | 2013-01-10 | Nihon Univ | 蛍光体、及び蛍光体の製造方法 |
JP2013123057A (ja) * | 2011-12-12 | 2013-06-20 | Lg Innotek Co Ltd | 発光素子パッケージ |
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CN101108965B (zh) | 2011-02-23 |
US7498736B2 (en) | 2009-03-03 |
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US20080018234A1 (en) | 2008-01-24 |
US20090127507A1 (en) | 2009-05-21 |
CN101108965A (zh) | 2008-01-23 |
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