JP2008004956A5 - - Google Patents

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Publication number
JP2008004956A5
JP2008004956A5 JP2007210197A JP2007210197A JP2008004956A5 JP 2008004956 A5 JP2008004956 A5 JP 2008004956A5 JP 2007210197 A JP2007210197 A JP 2007210197A JP 2007210197 A JP2007210197 A JP 2007210197A JP 2008004956 A5 JP2008004956 A5 JP 2008004956A5
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JP
Japan
Prior art keywords
magnetoresistive element
tunnel barrier
ferromagnetic layer
layer
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2007210197A
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English (en)
Japanese (ja)
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JP4581133B2 (ja
JP2008004956A (ja
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Priority to JP2007210197A priority Critical patent/JP4581133B2/ja
Priority claimed from JP2007210197A external-priority patent/JP4581133B2/ja
Publication of JP2008004956A publication Critical patent/JP2008004956A/ja
Publication of JP2008004956A5 publication Critical patent/JP2008004956A5/ja
Application granted granted Critical
Publication of JP4581133B2 publication Critical patent/JP4581133B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2007210197A 2004-03-12 2007-08-10 磁気抵抗素子 Expired - Lifetime JP4581133B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007210197A JP4581133B2 (ja) 2004-03-12 2007-08-10 磁気抵抗素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004071186 2004-03-12
JP2004313350 2004-10-28
JP2007210197A JP4581133B2 (ja) 2004-03-12 2007-08-10 磁気抵抗素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006511062A Division JP4082711B2 (ja) 2004-03-12 2005-03-10 磁気抵抗素子及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008238154A Division JP2009021626A (ja) 2004-03-12 2008-09-17 磁気多層膜及び多層構造体

Publications (3)

Publication Number Publication Date
JP2008004956A JP2008004956A (ja) 2008-01-10
JP2008004956A5 true JP2008004956A5 (enExample) 2010-05-27
JP4581133B2 JP4581133B2 (ja) 2010-11-17

Family

ID=39009035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007210197A Expired - Lifetime JP4581133B2 (ja) 2004-03-12 2007-08-10 磁気抵抗素子

Country Status (1)

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JP (1) JP4581133B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7884403B2 (en) 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
JP2009239121A (ja) * 2008-03-27 2009-10-15 Toshiba Corp 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
KR20110002878A (ko) * 2008-09-01 2011-01-10 캐논 아네르바 가부시키가이샤 자기 저항 소자와 그 제조 방법, 그 제조 방법에 이용되는 기억 매체
WO2010026703A1 (ja) * 2008-09-02 2010-03-11 キヤノンアネルバ株式会社 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体
JPWO2010026704A1 (ja) * 2008-09-04 2012-01-26 キヤノンアネルバ株式会社 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体
KR101145346B1 (ko) * 2008-11-27 2012-05-14 고려대학교 산학협력단 자기 정보 처리 장치 및 그 제조 방법
WO2010064564A1 (ja) * 2008-12-01 2010-06-10 キヤノンアネルバ株式会社 磁気抵抗素子、その製造方法、および該製造方法に用いる記憶媒体
US8154828B2 (en) 2009-07-10 2012-04-10 Tdk Corporation Magnetoresistive effect element in CPP-type structure and magnetic disk device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319722A (ja) * 2001-01-22 2002-10-31 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子とその製造方法
JP2002246567A (ja) * 2001-02-14 2002-08-30 Toshiba Corp 磁気ランダムアクセスメモリ
JP3576111B2 (ja) * 2001-03-12 2004-10-13 株式会社東芝 磁気抵抗効果素子
JP3638563B2 (ja) * 2002-03-27 2005-04-13 株式会社東芝 磁気抵抗効果素子およびこれを用いた磁気メモリ
WO2004025744A1 (ja) * 2002-09-13 2004-03-25 Fujitsu Limited 感磁素子及びその製造方法、並びにその感磁素子を用いた磁気ヘッド、エンコーダ装置、及び磁気記憶装置
US7884403B2 (en) * 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same

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