JP4581133B2 - 磁気抵抗素子 - Google Patents

磁気抵抗素子 Download PDF

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Publication number
JP4581133B2
JP4581133B2 JP2007210197A JP2007210197A JP4581133B2 JP 4581133 B2 JP4581133 B2 JP 4581133B2 JP 2007210197 A JP2007210197 A JP 2007210197A JP 2007210197 A JP2007210197 A JP 2007210197A JP 4581133 B2 JP4581133 B2 JP 4581133B2
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JP
Japan
Prior art keywords
mgo
magnetoresistive element
layer
tunnel barrier
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2007210197A
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English (en)
Japanese (ja)
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JP2008004956A5 (enExample
JP2008004956A (ja
Inventor
新治 湯浅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
National Institute of Advanced Industrial Science and Technology AIST
National Institute of Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
National Institute of Advanced Industrial Science and Technology AIST
National Institute of Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency, National Institute of Advanced Industrial Science and Technology AIST, National Institute of Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Priority to JP2007210197A priority Critical patent/JP4581133B2/ja
Publication of JP2008004956A publication Critical patent/JP2008004956A/ja
Publication of JP2008004956A5 publication Critical patent/JP2008004956A5/ja
Application granted granted Critical
Publication of JP4581133B2 publication Critical patent/JP4581133B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2007210197A 2004-03-12 2007-08-10 磁気抵抗素子 Expired - Lifetime JP4581133B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007210197A JP4581133B2 (ja) 2004-03-12 2007-08-10 磁気抵抗素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004071186 2004-03-12
JP2004313350 2004-10-28
JP2007210197A JP4581133B2 (ja) 2004-03-12 2007-08-10 磁気抵抗素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006511062A Division JP4082711B2 (ja) 2004-03-12 2005-03-10 磁気抵抗素子及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008238154A Division JP2009021626A (ja) 2004-03-12 2008-09-17 磁気多層膜及び多層構造体

Publications (3)

Publication Number Publication Date
JP2008004956A JP2008004956A (ja) 2008-01-10
JP2008004956A5 JP2008004956A5 (enExample) 2010-05-27
JP4581133B2 true JP4581133B2 (ja) 2010-11-17

Family

ID=39009035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007210197A Expired - Lifetime JP4581133B2 (ja) 2004-03-12 2007-08-10 磁気抵抗素子

Country Status (1)

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JP (1) JP4581133B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7884403B2 (en) 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
JP2009239121A (ja) * 2008-03-27 2009-10-15 Toshiba Corp 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
KR20110002878A (ko) * 2008-09-01 2011-01-10 캐논 아네르바 가부시키가이샤 자기 저항 소자와 그 제조 방법, 그 제조 방법에 이용되는 기억 매체
WO2010026703A1 (ja) * 2008-09-02 2010-03-11 キヤノンアネルバ株式会社 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体
JPWO2010026704A1 (ja) * 2008-09-04 2012-01-26 キヤノンアネルバ株式会社 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体
KR101145346B1 (ko) * 2008-11-27 2012-05-14 고려대학교 산학협력단 자기 정보 처리 장치 및 그 제조 방법
WO2010064564A1 (ja) * 2008-12-01 2010-06-10 キヤノンアネルバ株式会社 磁気抵抗素子、その製造方法、および該製造方法に用いる記憶媒体
US8154828B2 (en) 2009-07-10 2012-04-10 Tdk Corporation Magnetoresistive effect element in CPP-type structure and magnetic disk device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319722A (ja) * 2001-01-22 2002-10-31 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子とその製造方法
JP2002246567A (ja) * 2001-02-14 2002-08-30 Toshiba Corp 磁気ランダムアクセスメモリ
JP3576111B2 (ja) * 2001-03-12 2004-10-13 株式会社東芝 磁気抵抗効果素子
JP3638563B2 (ja) * 2002-03-27 2005-04-13 株式会社東芝 磁気抵抗効果素子およびこれを用いた磁気メモリ
WO2004025744A1 (ja) * 2002-09-13 2004-03-25 Fujitsu Limited 感磁素子及びその製造方法、並びにその感磁素子を用いた磁気ヘッド、エンコーダ装置、及び磁気記憶装置
US7884403B2 (en) * 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same

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Publication number Publication date
JP2008004956A (ja) 2008-01-10

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