JP2008001988A5 - - Google Patents

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Publication number
JP2008001988A5
JP2008001988A5 JP2007164564A JP2007164564A JP2008001988A5 JP 2008001988 A5 JP2008001988 A5 JP 2008001988A5 JP 2007164564 A JP2007164564 A JP 2007164564A JP 2007164564 A JP2007164564 A JP 2007164564A JP 2008001988 A5 JP2008001988 A5 JP 2008001988A5
Authority
JP
Japan
Prior art keywords
target
chamber
backing plate
vapor deposition
physical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007164564A
Other languages
English (en)
Japanese (ja)
Other versions
JP5324759B2 (ja
JP2008001988A (ja
Filing date
Publication date
Priority claimed from US11/426,271 external-priority patent/US7815782B2/en
Application filed filed Critical
Publication of JP2008001988A publication Critical patent/JP2008001988A/ja
Publication of JP2008001988A5 publication Critical patent/JP2008001988A5/ja
Application granted granted Critical
Publication of JP5324759B2 publication Critical patent/JP5324759B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007164564A 2006-06-23 2007-06-22 改善されたｐｖｄターゲット Expired - Fee Related JP5324759B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/426,271 US7815782B2 (en) 2006-06-23 2006-06-23 PVD target
US11/426271 2006-06-23

Publications (3)

Publication Number Publication Date
JP2008001988A JP2008001988A (ja) 2008-01-10
JP2008001988A5 true JP2008001988A5 (https=) 2010-08-05
JP5324759B2 JP5324759B2 (ja) 2013-10-23

Family

ID=38872563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007164564A Expired - Fee Related JP5324759B2 (ja) 2006-06-23 2007-06-22 改善されたｐｖｄターゲット

Country Status (5)

Country Link
US (2) US7815782B2 (https=)
JP (1) JP5324759B2 (https=)
KR (1) KR100881692B1 (https=)
CN (2) CN101100741B (https=)
TW (1) TWI363806B (https=)

Families Citing this family (23)

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US7550055B2 (en) * 2005-05-31 2009-06-23 Applied Materials, Inc. Elastomer bonding of large area sputtering target
US20080067058A1 (en) * 2006-09-15 2008-03-20 Stimson Bradley O Monolithic target for flat panel application
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
JP5390796B2 (ja) * 2008-06-19 2014-01-15 国立大学法人東北大学 マグネトロンスパッタ方法及びマグネトロンスパッタ装置
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US9103018B2 (en) * 2009-05-08 2015-08-11 General Plasma, Inc. Sputtering target temperature control utilizing layers having predetermined emissivity coefficients
WO2011108489A1 (ja) * 2010-03-01 2011-09-09 株式会社アルバック スパッタリング装置
TW201113496A (en) * 2010-12-28 2011-04-16 shu-hua Xu Modular cooling plate and method for producing the same
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
CN103374702B (zh) * 2012-04-24 2015-08-12 上海北玻镀膜技术工业有限公司 一种防溅射装置
KR102081597B1 (ko) * 2012-12-21 2020-04-16 엘지디스플레이 주식회사 스퍼터링 장치 및 산화물 반도체 물질의 스퍼터링 방법
US11183375B2 (en) 2014-03-31 2021-11-23 Applied Materials, Inc. Deposition system with multi-cathode and method of manufacture thereof
WO2015164257A1 (en) * 2014-04-21 2015-10-29 Kurt J. Lesker Company Surrounding field sputtering source
US9972479B2 (en) * 2014-08-08 2018-05-15 Ulvac, Inc. Target assembly
US20160053365A1 (en) * 2014-08-20 2016-02-25 Honeywell International Inc. Encapsulated composite backing plate
EP3375007A4 (en) * 2015-11-12 2019-07-31 Honeywell International Inc. CARRIER PLATE ASSEMBLY WITH COOLING STRUCTURE FOR SPUTTER TARGETS
US10431440B2 (en) 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
US10325763B2 (en) * 2017-01-20 2019-06-18 Applied Materials, Inc. Physical vapor deposition processing systems target cooling
US10685821B2 (en) 2017-08-18 2020-06-16 Applied Materials, Inc. Physical vapor deposition processing systems target cooling
US20210230739A1 (en) * 2020-01-27 2021-07-29 Applied Materials, Inc. Physical Vapor Deposition Apparatus And Methods With Gradient Thickness Target

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
DE2307649B2 (de) * 1973-02-16 1980-07-31 Robert Bosch Gmbh, 7000 Stuttgart Anordnung zum Aufstäuben verschiedener Materialien auf einem Substrat
JPH0220210Y2 (https=) * 1986-08-25 1990-06-01
EP0625792B1 (en) * 1993-05-19 1997-05-28 Applied Materials, Inc. Apparatus and process for increasing uniformity of sputtering rate in sputtering apparatus
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5487822A (en) 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
JP3398452B2 (ja) * 1994-01-19 2003-04-21 株式会社ソニー・ディスクテクノロジー スパッタリング装置
US5518593A (en) * 1994-04-29 1996-05-21 Applied Komatsu Technology, Inc. Shield configuration for vacuum chamber
US5593082A (en) * 1994-11-15 1997-01-14 Tosoh Smd, Inc. Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby
US6073830A (en) 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
KR100262768B1 (ko) 1996-04-24 2000-08-01 니시히라 순지 스퍼터성막장치
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
JP2000073164A (ja) 1998-08-28 2000-03-07 Showa Alum Corp スパッタリング用バッキングプレート
JP2000144399A (ja) * 1998-10-30 2000-05-26 Applied Materials Inc スパッタリング装置
US6164519A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of bonding a sputtering target to a backing plate
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
US6296747B1 (en) * 2000-06-22 2001-10-02 Applied Materials, Inc. Baffled perforated shield in a plasma sputtering reactor
US6358376B1 (en) * 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
JP2003183822A (ja) * 2001-12-19 2003-07-03 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットおよびその製造方法
US6910616B2 (en) 2002-03-07 2005-06-28 The Boeing Company Preforms for forming machined structural assemblies
JP2004183022A (ja) * 2002-12-02 2004-07-02 Ulvac Japan Ltd ターゲット装置及びスパッタリング装置
US7101466B2 (en) 2003-09-19 2006-09-05 Kdf Electronic + Vacuum Services Inc Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization
US7588669B2 (en) * 2005-07-20 2009-09-15 Ascentool, Inc. Single-process-chamber deposition system

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