KR100881692B1 - 향상된 ｐｖｄ 타겟 - Google Patents

향상된 ｐｖｄ 타겟 Download PDF

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Publication number
KR100881692B1
KR100881692B1 KR1020070061727A KR20070061727A KR100881692B1 KR 100881692 B1 KR100881692 B1 KR 100881692B1 KR 1020070061727 A KR1020070061727 A KR 1020070061727A KR 20070061727 A KR20070061727 A KR 20070061727A KR 100881692 B1 KR100881692 B1 KR 100881692B1
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South Korea
Prior art keywords
target
back plate
sealing member
substrate
bonding layer
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KR1020070061727A
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English (en)
Korean (ko)
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KR20070122170A (ko
Inventor
마카토 이나가와
브레들리 오. 스팀슨
아키히로 호소가와
히엔민 휴 르
지르지얀 제리 첸
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20070122170A publication Critical patent/KR20070122170A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020070061727A 2006-06-23 2007-06-22 향상된 ｐｖｄ 타겟 Active KR100881692B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/426,271 US7815782B2 (en) 2006-06-23 2006-06-23 PVD target
US11/426,271 2006-06-23

Publications (2)

Publication Number Publication Date
KR20070122170A KR20070122170A (ko) 2007-12-28
KR100881692B1 true KR100881692B1 (ko) 2009-02-06

Family

ID=38872563

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070061727A Active KR100881692B1 (ko) 2006-06-23 2007-06-22 향상된 ｐｖｄ 타겟

Country Status (5)

Country Link
US (2) US7815782B2 (https=)
JP (1) JP5324759B2 (https=)
KR (1) KR100881692B1 (https=)
CN (2) CN101100741B (https=)
TW (1) TWI363806B (https=)

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US7550055B2 (en) * 2005-05-31 2009-06-23 Applied Materials, Inc. Elastomer bonding of large area sputtering target
US20080067058A1 (en) * 2006-09-15 2008-03-20 Stimson Bradley O Monolithic target for flat panel application
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
JP5390796B2 (ja) * 2008-06-19 2014-01-15 国立大学法人東北大学 マグネトロンスパッタ方法及びマグネトロンスパッタ装置
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US9103018B2 (en) * 2009-05-08 2015-08-11 General Plasma, Inc. Sputtering target temperature control utilizing layers having predetermined emissivity coefficients
WO2011108489A1 (ja) * 2010-03-01 2011-09-09 株式会社アルバック スパッタリング装置
TW201113496A (en) * 2010-12-28 2011-04-16 shu-hua Xu Modular cooling plate and method for producing the same
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
CN103374702B (zh) * 2012-04-24 2015-08-12 上海北玻镀膜技术工业有限公司 一种防溅射装置
KR102081597B1 (ko) * 2012-12-21 2020-04-16 엘지디스플레이 주식회사 스퍼터링 장치 및 산화물 반도체 물질의 스퍼터링 방법
US11183375B2 (en) 2014-03-31 2021-11-23 Applied Materials, Inc. Deposition system with multi-cathode and method of manufacture thereof
WO2015164257A1 (en) * 2014-04-21 2015-10-29 Kurt J. Lesker Company Surrounding field sputtering source
US9972479B2 (en) * 2014-08-08 2018-05-15 Ulvac, Inc. Target assembly
US20160053365A1 (en) * 2014-08-20 2016-02-25 Honeywell International Inc. Encapsulated composite backing plate
EP3375007A4 (en) * 2015-11-12 2019-07-31 Honeywell International Inc. CARRIER PLATE ASSEMBLY WITH COOLING STRUCTURE FOR SPUTTER TARGETS
US10431440B2 (en) 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
US10325763B2 (en) * 2017-01-20 2019-06-18 Applied Materials, Inc. Physical vapor deposition processing systems target cooling
US10685821B2 (en) 2017-08-18 2020-06-16 Applied Materials, Inc. Physical vapor deposition processing systems target cooling
US20210230739A1 (en) * 2020-01-27 2021-07-29 Applied Materials, Inc. Physical Vapor Deposition Apparatus And Methods With Gradient Thickness Target

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010075630A (ko) * 1998-10-14 2001-08-09 로버트 에이. 바쎄트 스퍼터 타겟/배면 플레이트 어셈블리 및 어셈블리 제작 방법

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DE2307649B2 (de) * 1973-02-16 1980-07-31 Robert Bosch Gmbh, 7000 Stuttgart Anordnung zum Aufstäuben verschiedener Materialien auf einem Substrat
JPH0220210Y2 (https=) * 1986-08-25 1990-06-01
EP0625792B1 (en) * 1993-05-19 1997-05-28 Applied Materials, Inc. Apparatus and process for increasing uniformity of sputtering rate in sputtering apparatus
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5487822A (en) 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
JP3398452B2 (ja) * 1994-01-19 2003-04-21 株式会社ソニー・ディスクテクノロジー スパッタリング装置
US5518593A (en) * 1994-04-29 1996-05-21 Applied Komatsu Technology, Inc. Shield configuration for vacuum chamber
US5593082A (en) * 1994-11-15 1997-01-14 Tosoh Smd, Inc. Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby
KR100262768B1 (ko) 1996-04-24 2000-08-01 니시히라 순지 스퍼터성막장치
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
JP2000073164A (ja) 1998-08-28 2000-03-07 Showa Alum Corp スパッタリング用バッキングプレート
JP2000144399A (ja) * 1998-10-30 2000-05-26 Applied Materials Inc スパッタリング装置
US6164519A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of bonding a sputtering target to a backing plate
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
US6296747B1 (en) * 2000-06-22 2001-10-02 Applied Materials, Inc. Baffled perforated shield in a plasma sputtering reactor
US6358376B1 (en) * 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
JP2003183822A (ja) * 2001-12-19 2003-07-03 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットおよびその製造方法
US6910616B2 (en) 2002-03-07 2005-06-28 The Boeing Company Preforms for forming machined structural assemblies
JP2004183022A (ja) * 2002-12-02 2004-07-02 Ulvac Japan Ltd ターゲット装置及びスパッタリング装置
US7101466B2 (en) 2003-09-19 2006-09-05 Kdf Electronic + Vacuum Services Inc Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization
US7588669B2 (en) * 2005-07-20 2009-09-15 Ascentool, Inc. Single-process-chamber deposition system

Patent Citations (1)

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KR20010075630A (ko) * 1998-10-14 2001-08-09 로버트 에이. 바쎄트 스퍼터 타겟/배면 플레이트 어셈블리 및 어셈블리 제작 방법

Also Published As

Publication number Publication date
CN101100741B (zh) 2011-07-06
CN101979705B (zh) 2014-04-23
US20070295596A1 (en) 2007-12-27
KR20070122170A (ko) 2007-12-28
TW200804610A (en) 2008-01-16
US20070295598A1 (en) 2007-12-27
CN101100741A (zh) 2008-01-09
CN101979705A (zh) 2011-02-23
TWI363806B (en) 2012-05-11
JP5324759B2 (ja) 2013-10-23
US7815782B2 (en) 2010-10-19
JP2008001988A (ja) 2008-01-10

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