JP6126620B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP6126620B2 JP6126620B2 JP2014543119A JP2014543119A JP6126620B2 JP 6126620 B2 JP6126620 B2 JP 6126620B2 JP 2014543119 A JP2014543119 A JP 2014543119A JP 2014543119 A JP2014543119 A JP 2014543119A JP 6126620 B2 JP6126620 B2 JP 6126620B2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
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- 229910018293 LaTiO3 Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
T ターゲット
d1 隙間
1 LL室
2 SP室
3 基板トレイ
4 トレイホルダー
5 ターゲットホルダー
6 クランプリング
7 排気部
8 圧力計
31 トレイ本体
32 基板支持板
32a 貫通孔
32b 基板支持部
33 磁石
34 ヨーク
35 基板保持部
36 開口
36a 第1の開口部
36b 第2の開口部
42 冷却ガス導入路
80 シール部材
Claims (9)
- 処理室と、基板を保持する基板トレイを保持するためのトレイホルダーと、前記処理室内にプロセスガスを導入するためのガス導入部と、前記処理室内を排気するための排気部と、を有し、前記基板を処理するための基板処理装置であって、
前記基板トレイは、トレイ本体と、前記基板を支持する基板支持部を含む基板支持板と、を備え、
前記トレイ本体は、前記基板の処理すべき部分が露出するように前記基板の周端部を保持する基板保持部と、磁力によって前記基板支持板を前記トレイ本体が保持するように、前記基板保持部よりも外側に配置された磁石と、を含み、
前記トレイ本体には、前記基板保持部を構成するように第1の開口部、第2の開口部および挟持部が設けられていて、前記第1の開口部は、前記基板の外径より小さい第1の径を有し、前記挟持部は、前記第1の開口部から外側に延びたリング面を有し、前記第2の開口部は、前記基板の位置を規制するように前記基板の前記周端部の外側を取り囲む側面を有し、前記側面は、前記リング面によって前記第1の開口部と接続されており、前記基板の外径より大きな第2の径を有し、前記挟持部は、前記挟持部の前記リング面と前記基板支持部とで前記基板の前記周端部が挟持されるように構成され、前記第2の開口部は、前記側面によって前記基板の位置を規制し、
前記基板トレイは、シール部材を介して前記トレイホルダーによって保持されることを特徴とする基板処理装置。 - 前記トレイ本体の周辺部をクランプするクランプリングが設けられており、前記クランプリングによる押し付けにより、前記トレイ本体の下面と前記トレイホルダーのトレイ本体支持面とが前記シール部材により封止されることを特徴とする請求項1記載の基板処理装置。
- 前記クランプリングは、前記シール部材と対向する前記トレイ本体の周辺部をクランプするように配置されることを特徴とする請求項2に記載の基板処理装置。
- 前記シール部材が、Oリングであることを特徴する請求項1乃至3のいずれか1項に記載の基板処理装置。
- 前記トレイホルダー及び前記基板支持板の少なくとも一方には、前記基板の処理面と反対側の面に冷却ガスを導入するためのガス導入孔が設けられていることを特徴とする請求項1乃至4のいずれか1項に記載の基板処理装置。
- 処理室と、基板を保持する基板トレイを保持するためのトレイホルダーと、前記処理室内にプロセスガスを導入するためのガス導入部と、前記処理室内を排気するための排気部と、を有し、前記基板を処理するための基板処理装置であって、
前記基板トレイは、トレイ本体と、前記基板を支持する基板支持部を含む基板支持板と、を備え、
前記トレイ本体は、前記基板の処理すべき部分が露出するように前記基板の周端部を保持する基板保持部と、磁力によって前記基板支持板を前記トレイ本体が保持するように、前記基板保持部よりも外側に配置された磁石と、を含み、
前記基板トレイは、シール部材を介して前記トレイホルダーによって保持され、
前記磁石は、前記トレイ本体に埋設されており、
前記トレイ本体には、前記基板の外径より小さい第1の径を有する第1の開口部と、前記第1の開口部から外側に延びたリング面と、前記リング面によって前記第1の開口部と接続されており前記基板の外径より大きな第2の径を有する第2の開口部とが設けられていて、前記基板保持部は、前記第1の開口部、前記第2の開口部および前記リング面により形成されており、前記リング面と前記基板支持部とで前記基板を挟持し、前記第2の開口部によって前記基板の位置を規制することを特徴とする基板処理装置。 - 処理室と、基板を保持する基板トレイを保持するためのトレイホルダーと、前記処理室内にプロセスガスを導入するためのガス導入部と、前記処理室内を排気するための排気部と、を有し、前記基板を処理するための基板処理装置であって、
前記基板トレイは、トレイ本体と、前記基板を支持する基板支持部を含む基板支持板と、を備え、
前記トレイ本体は、前記基板の処理すべき部分が露出するように前記基板の周端部を保持する基板保持部と、磁力によって前記基板支持板を前記トレイ本体が保持するように、前記基板保持部よりも外側に配置された磁石と、を含み、
前記基板トレイは、シール部材を介して前記トレイホルダーによって保持され、
前記トレイ本体には、前記基板の外径より小さい第1の径を有する第1の開口部と、前記第1の開口部から外側に延びたリング面と、前記リング面によって前記第1の開口部と接続されており前記基板の外径より大きな第2の径を有する第2の開口部とが設けられていて、前記基板保持部は、前記第1の開口部、前記第2の開口部および前記リング面により形成されており、前記リング面と前記基板支持部とで前記基板を挟持し、前記第2の開口部によって前記基板の位置を規制することを特徴とする基板処理装置。 - 前記トレイ本体には、ヨークが埋設されていることを特徴とする請求項1乃至7のいずれか1項に記載の基板処理装置。
- 前記トレイ本体が、非磁性材料で形成されていることを特徴とする請求項1乃至8のいずれか1項に記載の基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012232705 | 2012-10-22 | ||
JP2012232705 | 2012-10-22 | ||
PCT/JP2013/003462 WO2014064860A1 (ja) | 2012-10-22 | 2013-05-31 | 基板処理装置 |
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JPWO2014064860A1 JPWO2014064860A1 (ja) | 2016-09-05 |
JP6126620B2 true JP6126620B2 (ja) | 2017-05-10 |
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JP (1) | JP6126620B2 (ja) |
KR (1) | KR101785178B1 (ja) |
CN (1) | CN104737283B (ja) |
TW (1) | TWI512885B (ja) |
WO (1) | WO2014064860A1 (ja) |
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TWI661510B (zh) * | 2017-09-06 | 2019-06-01 | 京鼎精密科技股份有限公司 | 晶圓支撐裝置 |
KR101980004B1 (ko) * | 2017-09-22 | 2019-08-28 | 주식회사 야스 | 마스크 시이트와 기판 갭을 최소화하는 기판 고정 유닛 |
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JP4095613B2 (ja) * | 2005-01-13 | 2008-06-04 | 大日本スクリーン製造株式会社 | 基板保持装置 |
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