JP2007534957A - 高放射率の放射体 - Google Patents
高放射率の放射体 Download PDFInfo
- Publication number
- JP2007534957A JP2007534957A JP2007510130A JP2007510130A JP2007534957A JP 2007534957 A JP2007534957 A JP 2007534957A JP 2007510130 A JP2007510130 A JP 2007510130A JP 2007510130 A JP2007510130 A JP 2007510130A JP 2007534957 A JP2007534957 A JP 2007534957A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- radiator
- amorphous carbon
- substrate
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 59
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 21
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- -1 SiC Chemical compound 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 238000009501 film coating Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 238000005477 sputtering target Methods 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003380 quartz crystal microbalance Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
- G01J5/53—Reference sources, e.g. standard lamps; Black bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
- Y10T428/12743—Next to refractory [Group IVB, VB, or VIB] metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Vapour Deposition (AREA)
- Radiation Pyrometers (AREA)
Abstract
【選択図】 図1
Description
Claims (12)
- 基板、アモルファスカーボン層、及び前記基板と前記アモルファスカーボン層の間に挿入された金属化カーバイド形成層を備えた放射体。
- 前記金属化カーバイド形成層はチタンを含む請求項1記載の放射体。
- 前記アモルファスカーボン層及び/又は前記チタン層は、0.1〜1.0μmの厚みを有する請求項1又は請求項2記載の放射体。
- 前記アモルファスカーボン層は、保護層で保護されている請求項1から請求項3のいずれか1項記載の放射体。
- 前記保護層は、実質的に赤外の放射を透過する請求項4記載の放射体。
- 前記保護層は、SiC,SiO2,ダイアモンド、ダイアモンドのようなカーボンの少なくとも1つを含んでいる請求項5記載の放射体。
- 基板上に金属化カーバイド形成層を形成する工程、及び前記金属化カーバイド形成層上にアモルファスカーボン層を形成する工程を備える放射体を製造する方法。
- 前記アモルファスカーボン層及び/又は前記金属化カーバイド形成層は、スパッタ沈積又はスパッタ蒸着により形成される請求項7記載の方法。
- 前記アモルファスカーボン層の頂部に保護層を形成する工程をさらに備える請求項7又は請求項8記載の方法。
- 前記放射体は前記金属化カーバイド形成層及び前記アモルファスカーボン層を形成する工程の後に焼鈍される請求項7から請求項9のいずれか1項記載の方法。
- 実質的に図示し説明したような放射体。
- 実質的に図示し説明したような放射体を製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04256077 | 2004-10-01 | ||
GB0421809A GB0421809D0 (en) | 2004-10-01 | 2004-10-01 | High-emissivity radiator |
PCT/GB2005/050171 WO2006038040A1 (en) | 2004-10-01 | 2005-09-30 | High-emissivity radiator |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010185252A Division JP2011064679A (ja) | 2004-10-01 | 2010-08-20 | 高放射率の放射体 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007534957A true JP2007534957A (ja) | 2007-11-29 |
Family
ID=35414693
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007510130A Withdrawn JP2007534957A (ja) | 2004-10-01 | 2005-09-30 | 高放射率の放射体 |
JP2010185252A Pending JP2011064679A (ja) | 2004-10-01 | 2010-08-20 | 高放射率の放射体 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010185252A Pending JP2011064679A (ja) | 2004-10-01 | 2010-08-20 | 高放射率の放射体 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7812327B2 (ja) |
EP (1) | EP1802947A1 (ja) |
JP (2) | JP2007534957A (ja) |
WO (1) | WO2006038040A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019521376A (ja) * | 2016-06-13 | 2019-07-25 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | 保護コーティングを含む保護されたアイテム |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9459154B2 (en) * | 2013-05-15 | 2016-10-04 | Raytheon Company | Multi-layer advanced carbon nanotube blackbody for compact, lightweight, and on-demand infrared calibration |
US9224749B1 (en) * | 2014-06-04 | 2015-12-29 | Macronix International Co., Ltd. | Method for filling polysilicon gate in semiconductor devices, and semiconductor devices |
TWI684002B (zh) * | 2014-11-19 | 2020-02-01 | 美商瑞西恩公司 | 用於產生黑體光譜的裝置、薄膜及方法 |
US10139287B2 (en) | 2015-10-15 | 2018-11-27 | Raytheon Company | In-situ thin film based temperature sensing for high temperature uniformity and high rate of temperature change thermal reference sources |
FR3121266A1 (fr) | 2021-03-29 | 2022-09-30 | Valeo Vision | Dissipateur thermique pour composant électronique et procédé de fabrication associé |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03257031A (ja) * | 1990-03-07 | 1991-11-15 | Canon Inc | 光学素子成形用型 |
JPH04311569A (ja) * | 1991-04-08 | 1992-11-04 | Yoshida Kogyo Kk <Ykk> | 硬質多層膜形成体およびその製造方法 |
JPH0854285A (ja) * | 1994-08-11 | 1996-02-27 | Tokai Carbon Co Ltd | 黒体炉 |
JPH08225936A (ja) * | 1995-01-26 | 1996-09-03 | Internatl Business Mach Corp <Ibm> | 基板上にアモルファス水素添加炭素膜を堆積する方法 |
WO1997009593A1 (en) * | 1995-09-08 | 1997-03-13 | Patinor A/S | Infrared emitter and methods for fabricating the same |
JP2002202048A (ja) * | 2000-12-28 | 2002-07-19 | Komatsu Ltd | 可変容量型流体機械 |
JP2003121261A (ja) * | 2001-10-15 | 2003-04-23 | Neopt Kk | 赤外線式温度センサおよびそれを用いた電磁調理器 |
JP2004169137A (ja) * | 2002-11-21 | 2004-06-17 | Hitachi Ltd | 摺動部材 |
Family Cites Families (11)
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US5206083A (en) | 1989-09-18 | 1993-04-27 | Cornell Research Foundation, Inc. | Diamond and diamond-like films and coatings prepared by deposition on substrate that contain a dispersion of diamond particles |
GB9001833D0 (en) | 1990-01-26 | 1990-03-28 | De Beers Ind Diamond | Method of bonding a diamond film to a substrate |
US5135808A (en) * | 1990-09-27 | 1992-08-04 | Diamonex, Incorporated | Abrasion wear resistant coated substrate product |
US5313325A (en) | 1992-07-20 | 1994-05-17 | Martin Marietta Energy Systems, Inc. | Blackbody material |
GB2274943B (en) | 1993-02-06 | 1996-08-28 | British Aerospace | Thermal picture synthesis device |
EP1067210A3 (en) | 1996-09-06 | 2002-11-13 | Sanyo Electric Co., Ltd. | Method for providing a hard carbon film on a substrate and electric shaver blade |
DE59712171D1 (de) | 1997-02-15 | 2005-02-24 | Siemens Building Tech Ag | Infrarot-Strahler und dessen Verwendung |
US6080445A (en) * | 1997-02-20 | 2000-06-27 | Citizen Watch Co., Ltd. | Method of forming films over insulating material |
JPH1149506A (ja) * | 1997-07-31 | 1999-02-23 | Kyocera Corp | 装飾部材 |
JP4560964B2 (ja) * | 2000-02-25 | 2010-10-13 | 住友電気工業株式会社 | 非晶質炭素被覆部材 |
DE10056242A1 (de) * | 2000-11-14 | 2002-05-23 | Alstom Switzerland Ltd | Kondensationswärmeübertrager |
-
2005
- 2005-09-30 WO PCT/GB2005/050171 patent/WO2006038040A1/en active Application Filing
- 2005-09-30 JP JP2007510130A patent/JP2007534957A/ja not_active Withdrawn
- 2005-09-30 EP EP05794181A patent/EP1802947A1/en not_active Withdrawn
- 2005-09-30 US US10/593,096 patent/US7812327B2/en active Active
-
2010
- 2010-08-20 JP JP2010185252A patent/JP2011064679A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03257031A (ja) * | 1990-03-07 | 1991-11-15 | Canon Inc | 光学素子成形用型 |
JPH04311569A (ja) * | 1991-04-08 | 1992-11-04 | Yoshida Kogyo Kk <Ykk> | 硬質多層膜形成体およびその製造方法 |
JPH0854285A (ja) * | 1994-08-11 | 1996-02-27 | Tokai Carbon Co Ltd | 黒体炉 |
JPH08225936A (ja) * | 1995-01-26 | 1996-09-03 | Internatl Business Mach Corp <Ibm> | 基板上にアモルファス水素添加炭素膜を堆積する方法 |
WO1997009593A1 (en) * | 1995-09-08 | 1997-03-13 | Patinor A/S | Infrared emitter and methods for fabricating the same |
JP2002202048A (ja) * | 2000-12-28 | 2002-07-19 | Komatsu Ltd | 可変容量型流体機械 |
JP2003121261A (ja) * | 2001-10-15 | 2003-04-23 | Neopt Kk | 赤外線式温度センサおよびそれを用いた電磁調理器 |
JP2004169137A (ja) * | 2002-11-21 | 2004-06-17 | Hitachi Ltd | 摺動部材 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019521376A (ja) * | 2016-06-13 | 2019-07-25 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | 保護コーティングを含む保護されたアイテム |
Also Published As
Publication number | Publication date |
---|---|
EP1802947A1 (en) | 2007-07-04 |
JP2011064679A (ja) | 2011-03-31 |
US20070210265A1 (en) | 2007-09-13 |
US7812327B2 (en) | 2010-10-12 |
WO2006038040A1 (en) | 2006-04-13 |
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