JP2007531289A - 表面堆積物を除去するための遠隔チャンバ方法 - Google Patents

表面堆積物を除去するための遠隔チャンバ方法 Download PDF

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Publication number
JP2007531289A
JP2007531289A JP2007505283A JP2007505283A JP2007531289A JP 2007531289 A JP2007531289 A JP 2007531289A JP 2007505283 A JP2007505283 A JP 2007505283A JP 2007505283 A JP2007505283 A JP 2007505283A JP 2007531289 A JP2007531289 A JP 2007531289A
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JP
Japan
Prior art keywords
gas mixture
fluorocarbon
oxygen
silicon
gas
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Withdrawn
Application number
JP2007505283A
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English (en)
Japanese (ja)
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JP2007531289A5 (https=
Inventor
ハロルド ソーイン ハーバート
バイ ボ
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Massachusetts Institute of Technology
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Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of JP2007531289A publication Critical patent/JP2007531289A/ja
Publication of JP2007531289A5 publication Critical patent/JP2007531289A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)
JP2007505283A 2004-03-24 2005-03-24 表面堆積物を除去するための遠隔チャンバ方法 Withdrawn JP2007531289A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US64044404P 2004-12-30 2004-12-30
US64083304P 2004-12-30 2004-12-30
PCT/US2005/010693 WO2005090638A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits

Publications (2)

Publication Number Publication Date
JP2007531289A true JP2007531289A (ja) 2007-11-01
JP2007531289A5 JP2007531289A5 (https=) 2008-03-21

Family

ID=34965582

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2007505283A Withdrawn JP2007531289A (ja) 2004-03-24 2005-03-24 表面堆積物を除去するための遠隔チャンバ方法
JP2007505281A Withdrawn JP2007530792A (ja) 2004-03-24 2005-03-24 表面堆積物を除去するための遠隔チャンバ方法
JP2007505282A Pending JP2007531288A (ja) 2004-03-24 2005-03-24 表面堆積物を除去するための遠隔チャンバ方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2007505281A Withdrawn JP2007530792A (ja) 2004-03-24 2005-03-24 表面堆積物を除去するための遠隔チャンバ方法
JP2007505282A Pending JP2007531288A (ja) 2004-03-24 2005-03-24 表面堆積物を除去するための遠隔チャンバ方法

Country Status (6)

Country Link
EP (3) EP1733071A2 (https=)
JP (3) JP2007531289A (https=)
KR (3) KR20070043697A (https=)
BR (3) BRPI0508205A (https=)
TW (3) TWI281714B (https=)
WO (3) WO2005090638A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023543662A (ja) * 2020-08-14 2023-10-18 ジルトロニック アクチエンゲゼルシャフト 基板ウェーハ上に半導体材料の層を堆積させるための装置および方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697467A1 (en) * 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US7581549B2 (en) * 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
CN101238238A (zh) * 2005-08-02 2008-08-06 麻省理工学院 使用氟化硫从cvd/pecvd腔的内部除去表面沉积物的远程腔方法
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
CN104853855B (zh) * 2012-12-18 2020-07-24 海星化学有限公司 用于薄膜沉积反应器和薄膜层的原位干式清洁的过程和方法
JP6202423B2 (ja) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法およびプラズマクリーニング装置
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
JP6462699B2 (ja) 2013-12-30 2019-01-30 ザ ケマーズ カンパニー エフシー リミテッド ライアビリティ カンパニー チャンバクリーニング及び半導体エッチング用ガス
CN113261081B (zh) * 2018-12-25 2024-04-12 株式会社力森诺科 附着物除去方法和成膜方法
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
CN116145106B (zh) * 2023-02-21 2024-12-24 苏州鼎芯光电科技有限公司 一种用于半导体镀膜工艺腔室的清洁方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023543662A (ja) * 2020-08-14 2023-10-18 ジルトロニック アクチエンゲゼルシャフト 基板ウェーハ上に半導体材料の層を堆積させるための装置および方法
JP7682999B2 (ja) 2020-08-14 2025-05-26 ジルトロニック アクチエンゲゼルシャフト 基板ウェーハ上に半導体材料の層を堆積させるための装置および方法

Also Published As

Publication number Publication date
KR20070043697A (ko) 2007-04-25
WO2005090638A9 (en) 2006-01-26
WO2005098086A2 (en) 2005-10-20
JP2007531288A (ja) 2007-11-01
KR20070037434A (ko) 2007-04-04
TW200623281A (en) 2006-07-01
EP1737998A2 (en) 2007-01-03
WO2005098086A3 (en) 2006-05-04
TWI281714B (en) 2007-05-21
TWI281715B (en) 2007-05-21
TW200623251A (en) 2006-07-01
EP1733071A2 (en) 2006-12-20
WO2005095670A2 (en) 2005-10-13
EP1733072A2 (en) 2006-12-20
BRPI0508214A (pt) 2007-07-17
TW200623240A (en) 2006-07-01
KR20070040748A (ko) 2007-04-17
BRPI0508205A (pt) 2007-07-17
WO2005090638A2 (en) 2005-09-29
WO2005090638A8 (en) 2006-11-16
JP2007530792A (ja) 2007-11-01
WO2005090638A3 (en) 2006-04-13
WO2005095670A3 (en) 2006-05-04
BRPI0508204A (pt) 2007-07-17
TWI284929B (en) 2007-08-01

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