JP2007531289A5 - - Google Patents
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- Publication number
- JP2007531289A5 JP2007531289A5 JP2007505283A JP2007505283A JP2007531289A5 JP 2007531289 A5 JP2007531289 A5 JP 2007531289A5 JP 2007505283 A JP2007505283 A JP 2007505283A JP 2007505283 A JP2007505283 A JP 2007505283A JP 2007531289 A5 JP2007531289 A5 JP 2007531289A5
- Authority
- JP
- Japan
- Prior art keywords
- gas mixture
- oxygen
- fluorocarbon
- surface deposit
- activated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000007789 gas Substances 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 4
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical class [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- -1 NF 3 Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- UEOZRAZSBQVQKG-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluorooxolane Chemical compound FC1(F)OC(F)(F)C(F)(F)C1(F)F UEOZRAZSBQVQKG-UHFFFAOYSA-N 0.000 description 1
- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 229960004065 perflutren Drugs 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55622704P | 2004-03-24 | 2004-03-24 | |
| US64044404P | 2004-12-30 | 2004-12-30 | |
| US64083304P | 2004-12-30 | 2004-12-30 | |
| PCT/US2005/010693 WO2005090638A2 (en) | 2004-03-24 | 2005-03-24 | Remote chamber methods for removing surface deposits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007531289A JP2007531289A (ja) | 2007-11-01 |
| JP2007531289A5 true JP2007531289A5 (https=) | 2008-03-21 |
Family
ID=34965582
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007505283A Withdrawn JP2007531289A (ja) | 2004-03-24 | 2005-03-24 | 表面堆積物を除去するための遠隔チャンバ方法 |
| JP2007505281A Withdrawn JP2007530792A (ja) | 2004-03-24 | 2005-03-24 | 表面堆積物を除去するための遠隔チャンバ方法 |
| JP2007505282A Pending JP2007531288A (ja) | 2004-03-24 | 2005-03-24 | 表面堆積物を除去するための遠隔チャンバ方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007505281A Withdrawn JP2007530792A (ja) | 2004-03-24 | 2005-03-24 | 表面堆積物を除去するための遠隔チャンバ方法 |
| JP2007505282A Pending JP2007531288A (ja) | 2004-03-24 | 2005-03-24 | 表面堆積物を除去するための遠隔チャンバ方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (3) | EP1733071A2 (https=) |
| JP (3) | JP2007531289A (https=) |
| KR (3) | KR20070043697A (https=) |
| BR (3) | BRPI0508205A (https=) |
| TW (3) | TWI281714B (https=) |
| WO (3) | WO2005090638A2 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0697467A1 (en) * | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Method and apparatus for cleaning a deposition chamber |
| US7581549B2 (en) * | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
| CN101238238A (zh) * | 2005-08-02 | 2008-08-06 | 麻省理工学院 | 使用氟化硫从cvd/pecvd腔的内部除去表面沉积物的远程腔方法 |
| US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
| US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
| CN104853855B (zh) * | 2012-12-18 | 2020-07-24 | 海星化学有限公司 | 用于薄膜沉积反应器和薄膜层的原位干式清洁的过程和方法 |
| JP6202423B2 (ja) * | 2013-03-05 | 2017-09-27 | パナソニックＩｐマネジメント株式会社 | プラズマクリーニング方法およびプラズマクリーニング装置 |
| US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
| JP6462699B2 (ja) | 2013-12-30 | 2019-01-30 | ザ ケマーズ カンパニー エフシー リミテッド ライアビリティ カンパニー | チャンバクリーニング及び半導体エッチング用ガス |
| CN113261081B (zh) * | 2018-12-25 | 2024-04-12 | 株式会社力森诺科 | 附着物除去方法和成膜方法 |
| US11854773B2 (en) | 2020-03-31 | 2023-12-26 | Applied Materials, Inc. | Remote plasma cleaning of chambers for electronics manufacturing systems |
| EP3954804A1 (de) * | 2020-08-14 | 2022-02-16 | Siltronic AG | Vorrichtung und verfahren zum abscheiden einer schicht aus halbleitermaterial auf einer substratscheibe |
| CN116145106B (zh) * | 2023-02-21 | 2024-12-24 | 苏州鼎芯光电科技有限公司 | 一种用于半导体镀膜工艺腔室的清洁方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158644A (en) * | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
| JP2002280376A (ja) * | 2001-03-22 | 2002-09-27 | Research Institute Of Innovative Technology For The Earth | Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置 |
-
2005
- 2005-03-24 EP EP05734780A patent/EP1733071A2/en not_active Withdrawn
- 2005-03-24 WO PCT/US2005/010693 patent/WO2005090638A2/en not_active Ceased
- 2005-03-24 KR KR1020067021948A patent/KR20070043697A/ko not_active Withdrawn
- 2005-03-24 KR KR1020067021949A patent/KR20070040748A/ko not_active Withdrawn
- 2005-03-24 EP EP05760434A patent/EP1737998A2/en not_active Withdrawn
- 2005-03-24 KR KR1020067021947A patent/KR20070037434A/ko not_active Withdrawn
- 2005-03-24 JP JP2007505283A patent/JP2007531289A/ja not_active Withdrawn
- 2005-03-24 BR BRPI0508205-6A patent/BRPI0508205A/pt not_active Application Discontinuation
- 2005-03-24 EP EP05760380A patent/EP1733072A2/en not_active Withdrawn
- 2005-03-24 JP JP2007505281A patent/JP2007530792A/ja not_active Withdrawn
- 2005-03-24 WO PCT/US2005/010691 patent/WO2005095670A2/en not_active Ceased
- 2005-03-24 BR BRPI0508204-8A patent/BRPI0508204A/pt not_active IP Right Cessation
- 2005-03-24 BR BRPI0508214-5A patent/BRPI0508214A/pt not_active IP Right Cessation
- 2005-03-24 WO PCT/US2005/010692 patent/WO2005098086A2/en not_active Ceased
- 2005-03-24 JP JP2007505282A patent/JP2007531288A/ja active Pending
- 2005-06-28 TW TW094121538A patent/TWI281714B/zh not_active IP Right Cessation
- 2005-06-28 TW TW094121536A patent/TWI281715B/zh not_active IP Right Cessation
- 2005-06-28 TW TW094121537A patent/TWI284929B/zh not_active IP Right Cessation
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