KR20070043697A - 표면 적층물을 제거하기 위한 원격 챔버 방법 - Google Patents

표면 적층물을 제거하기 위한 원격 챔버 방법 Download PDF

Info

Publication number
KR20070043697A
KR20070043697A KR1020067021948A KR20067021948A KR20070043697A KR 20070043697 A KR20070043697 A KR 20070043697A KR 1020067021948 A KR1020067021948 A KR 1020067021948A KR 20067021948 A KR20067021948 A KR 20067021948A KR 20070043697 A KR20070043697 A KR 20070043697A
Authority
KR
South Korea
Prior art keywords
gas mixture
oxygen
chamber
gas
surface stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020067021948A
Other languages
English (en)
Korean (ko)
Inventor
허버트 해롤드 사윈
보 바이
Original Assignee
매사추세츠 인스티튜트 오브 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 매사추세츠 인스티튜트 오브 테크놀로지 filed Critical 매사추세츠 인스티튜트 오브 테크놀로지
Publication of KR20070043697A publication Critical patent/KR20070043697A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)
KR1020067021948A 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법 Withdrawn KR20070043697A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US60/556,227 2004-03-24
US64044404P 2004-12-30 2004-12-30
US64083304P 2004-12-30 2004-12-30
US60/640,833 2004-12-30
US60/640,444 2004-12-30

Publications (1)

Publication Number Publication Date
KR20070043697A true KR20070043697A (ko) 2007-04-25

Family

ID=34965582

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020067021948A Withdrawn KR20070043697A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법
KR1020067021949A Withdrawn KR20070040748A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법
KR1020067021947A Withdrawn KR20070037434A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020067021949A Withdrawn KR20070040748A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법
KR1020067021947A Withdrawn KR20070037434A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법

Country Status (6)

Country Link
EP (3) EP1733071A2 (https=)
JP (3) JP2007531289A (https=)
KR (3) KR20070043697A (https=)
BR (3) BRPI0508205A (https=)
TW (3) TWI281714B (https=)
WO (3) WO2005090638A2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697467A1 (en) * 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US7581549B2 (en) * 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
CN101238238A (zh) * 2005-08-02 2008-08-06 麻省理工学院 使用氟化硫从cvd/pecvd腔的内部除去表面沉积物的远程腔方法
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
CN104853855B (zh) * 2012-12-18 2020-07-24 海星化学有限公司 用于薄膜沉积反应器和薄膜层的原位干式清洁的过程和方法
JP6202423B2 (ja) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法およびプラズマクリーニング装置
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
JP6462699B2 (ja) 2013-12-30 2019-01-30 ザ ケマーズ カンパニー エフシー リミテッド ライアビリティ カンパニー チャンバクリーニング及び半導体エッチング用ガス
CN113261081B (zh) * 2018-12-25 2024-04-12 株式会社力森诺科 附着物除去方法和成膜方法
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
EP3954804A1 (de) * 2020-08-14 2022-02-16 Siltronic AG Vorrichtung und verfahren zum abscheiden einer schicht aus halbleitermaterial auf einer substratscheibe
CN116145106B (zh) * 2023-02-21 2024-12-24 苏州鼎芯光电科技有限公司 一种用于半导体镀膜工艺腔室的清洁方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置

Also Published As

Publication number Publication date
WO2005090638A9 (en) 2006-01-26
WO2005098086A2 (en) 2005-10-20
JP2007531288A (ja) 2007-11-01
KR20070037434A (ko) 2007-04-04
TW200623281A (en) 2006-07-01
EP1737998A2 (en) 2007-01-03
WO2005098086A3 (en) 2006-05-04
TWI281714B (en) 2007-05-21
TWI281715B (en) 2007-05-21
TW200623251A (en) 2006-07-01
EP1733071A2 (en) 2006-12-20
WO2005095670A2 (en) 2005-10-13
EP1733072A2 (en) 2006-12-20
BRPI0508214A (pt) 2007-07-17
JP2007531289A (ja) 2007-11-01
TW200623240A (en) 2006-07-01
KR20070040748A (ko) 2007-04-17
BRPI0508205A (pt) 2007-07-17
WO2005090638A2 (en) 2005-09-29
WO2005090638A8 (en) 2006-11-16
JP2007530792A (ja) 2007-11-01
WO2005090638A3 (en) 2006-04-13
WO2005095670A3 (en) 2006-05-04
BRPI0508204A (pt) 2007-07-17
TWI284929B (en) 2007-08-01

Similar Documents

Publication Publication Date Title
US20060144820A1 (en) Remote chamber methods for removing surface deposits
US20070207275A1 (en) Enhancement of remote plasma source clean for dielectric films
US20070107750A1 (en) Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
US7581549B2 (en) Method for removing carbon-containing residues from a substrate
US20070028944A1 (en) Method of using NF3 for removing surface deposits
US20090047447A1 (en) Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor
CN101378850A (zh) 加强用于介电膜层的远程等离子体源清洁
KR20070043697A (ko) 표면 적층물을 제거하기 위한 원격 챔버 방법
JP2009503905A (ja) 表面沈着物の除去および化学蒸着（ｃｖｄ）チャンバーの内部の内部表面の不動態化方法
US20050258137A1 (en) Remote chamber methods for removing surface deposits
US20070028943A1 (en) Method of using sulfur fluoride for removing surface deposits
KR102275996B1 (ko) 하이드로플루오로올레핀 식각 가스 혼합물
US20060144819A1 (en) Remote chamber methods for removing surface deposits
HK1116224A (en) Remote chamber methods for removing surface deposits
HK1119209A (en) Remote chamber methods for removing surface deposits

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20061023

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid