JP2007519119A5 - - Google Patents

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Publication number
JP2007519119A5
JP2007519119A5 JP2006551010A JP2006551010A JP2007519119A5 JP 2007519119 A5 JP2007519119 A5 JP 2007519119A5 JP 2006551010 A JP2006551010 A JP 2006551010A JP 2006551010 A JP2006551010 A JP 2006551010A JP 2007519119 A5 JP2007519119 A5 JP 2007519119A5
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JP
Japan
Prior art keywords
flash memory
control unit
data
nand flash
master control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006551010A
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English (en)
Japanese (ja)
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JP2007519119A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/SG2004/000020 external-priority patent/WO2005069150A1/en
Publication of JP2007519119A publication Critical patent/JP2007519119A/ja
Publication of JP2007519119A5 publication Critical patent/JP2007519119A5/ja
Pending legal-status Critical Current

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JP2006551010A 2004-01-20 2004-01-20 複数のメモリデバイスを使用するポータブルデータ記憶デバイス Pending JP2007519119A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SG2004/000020 WO2005069150A1 (en) 2004-01-20 2004-01-20 Portable data storage device using multiple memory devices

Publications (2)

Publication Number Publication Date
JP2007519119A JP2007519119A (ja) 2007-07-12
JP2007519119A5 true JP2007519119A5 (https=) 2008-03-13

Family

ID=34793523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006551010A Pending JP2007519119A (ja) 2004-01-20 2004-01-20 複数のメモリデバイスを使用するポータブルデータ記憶デバイス

Country Status (7)

Country Link
US (1) US20080228996A1 (https=)
EP (1) EP1709542A1 (https=)
JP (1) JP2007519119A (https=)
CN (1) CN100495369C (https=)
BR (1) BRPI0418431A (https=)
TW (1) TWI303385B (https=)
WO (1) WO2005069150A1 (https=)

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US11948629B2 (en) 2005-09-30 2024-04-02 Mosaid Technologies Incorporated Non-volatile memory device with concurrent bank operations
US7747833B2 (en) 2005-09-30 2010-06-29 Mosaid Technologies Incorporated Independent link and bank selection
US20070076502A1 (en) 2005-09-30 2007-04-05 Pyeon Hong B Daisy chain cascading devices
CN100397380C (zh) * 2005-12-27 2008-06-25 北京中星微电子有限公司 多通道闪存传输控制器、芯片及存储设备
ITRM20060074A1 (it) 2006-02-15 2007-08-16 Micron Technology Inc Circuito per dati a latch singolo in un dispositivo di memoria volatile e delle a piu livelli
WO2007095217A1 (en) * 2006-02-15 2007-08-23 Micron Technology, Inc. Single latch data circuit in a multiple level cell non-volatile memory device
JP4020934B2 (ja) * 2006-02-24 2007-12-12 トヨタ自動車株式会社 緊急通報装置
US7802064B2 (en) * 2006-03-31 2010-09-21 Mosaid Technologies Incorporated Flash memory system control scheme
US7904639B2 (en) 2006-08-22 2011-03-08 Mosaid Technologies Incorporated Modular command structure for memory and memory system
US8407395B2 (en) 2006-08-22 2013-03-26 Mosaid Technologies Incorporated Scalable memory system
US8046527B2 (en) 2007-02-22 2011-10-25 Mosaid Technologies Incorporated Apparatus and method for using a page buffer of a memory device as a temporary cache
US8086785B2 (en) 2007-02-22 2011-12-27 Mosaid Technologies Incorporated System and method of page buffer operation for memory devices
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US8194481B2 (en) 2008-12-18 2012-06-05 Mosaid Technologies Incorporated Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation
US8037235B2 (en) 2008-12-18 2011-10-11 Mosaid Technologies Incorporated Device and method for transferring data to a non-volatile memory device
JP2013069171A (ja) * 2011-09-22 2013-04-18 Toshiba Corp メモリシステムとその制御方法
US9336112B2 (en) * 2012-06-19 2016-05-10 Apple Inc. Parallel status polling of multiple memory devices
US20140189201A1 (en) * 2012-12-31 2014-07-03 Krishnamurthy Dhakshinamurthy Flash Memory Interface Using Split Bus Configuration
US10831963B1 (en) * 2017-08-26 2020-11-10 Kong-Chen Chen Apparatus and method of parallel architecture for NVDIMM
US11500576B2 (en) 2017-08-26 2022-11-15 Entrantech Inc. Apparatus and architecture of non-volatile memory module in parallel configuration
CN108920387B (zh) * 2018-06-06 2021-04-20 深圳忆联信息系统有限公司 降低读延迟的方法、装置、计算机设备及存储介质

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