JP2007518278A - 先進の複圧ワークピース加工 - Google Patents

先進の複圧ワークピース加工 Download PDF

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Publication number
JP2007518278A
JP2007518278A JP2006549413A JP2006549413A JP2007518278A JP 2007518278 A JP2007518278 A JP 2007518278A JP 2006549413 A JP2006549413 A JP 2006549413A JP 2006549413 A JP2006549413 A JP 2006549413A JP 2007518278 A JP2007518278 A JP 2007518278A
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JP
Japan
Prior art keywords
pressure
processing
chamber
workpiece
processing chamber
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JP2006549413A
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English (en)
Japanese (ja)
Inventor
ジェイ．ディバイン ダニエル
ジョージ レーン
エム．パクルスキー ライアン
エー．バーカー デイビッド
Original Assignee
マットソン テクノロジイ インコーポレイテッド
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Publication of JP2007518278A publication Critical patent/JP2007518278A/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Plasma Technology (AREA)
JP2006549413A 2004-01-06 2005-01-06 先進の複圧ワークピース加工 Withdrawn JP2007518278A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53449504P 2004-01-06 2004-01-06
PCT/US2005/000423 WO2005067634A2 (en) 2004-01-06 2005-01-06 Advanced multi-pressure worpiece processing

Publications (1)

Publication Number Publication Date
JP2007518278A true JP2007518278A (ja) 2007-07-05

Family

ID=34794284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006549413A Withdrawn JP2007518278A (ja) 2004-01-06 2005-01-06 先進の複圧ワークピース加工

Country Status (7)

Country Link
US (1) US20050205210A1 (zh)
JP (1) JP2007518278A (zh)
KR (1) KR20060127019A (zh)
CN (1) CN1910308A (zh)
DE (1) DE112005000153T5 (zh)
TW (1) TWI257647B (zh)
WO (1) WO2005067634A2 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101501426B1 (ko) * 2006-06-02 2015-03-11 어플라이드 머티어리얼스, 인코포레이티드 차압 측정들에 의한 가스 유동 제어
CN104934353B (zh) * 2014-03-18 2018-01-19 北京北方华创微电子装备有限公司 传输系统、反应腔室及半导体加工设备
US10428426B2 (en) * 2016-04-22 2019-10-01 Applied Materials, Inc. Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime
WO2018031997A1 (en) * 2016-08-12 2018-02-15 Wisconsin Alumni Research Foundation Methods and systems for transmission and detection of free radicals
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR20230144106A (ko) * 2017-11-11 2023-10-13 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
CN111432920A (zh) 2017-11-17 2020-07-17 应用材料公司 用于高压处理系统的冷凝器系统
KR102536820B1 (ko) 2018-03-09 2023-05-24 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN113658891A (zh) * 2021-08-19 2021-11-16 上海稷以科技有限公司 一种晶圆加工装置
WO2023043043A1 (ko) * 2021-09-17 2023-03-23 주식회사 플라즈맵 플라즈마 처리 장치
KR102611478B1 (ko) * 2021-09-17 2023-12-08 주식회사 플라즈맵 플라즈마 처리 장치

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3125232A (en) * 1964-03-17 Transfer device
JPS6362233A (ja) * 1986-09-03 1988-03-18 Mitsubishi Electric Corp 反応性イオンエツチング装置
DE3731444A1 (de) * 1987-09-18 1989-03-30 Leybold Ag Vorrichtung zum beschichten von substraten
US5868854A (en) * 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
JP3466607B2 (ja) * 1989-09-13 2003-11-17 ソニー株式会社 スパッタリング装置
US5135391A (en) * 1990-04-24 1992-08-04 Micron Technology, Inc. Semiconductor processing gas diffuser plate
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
DE4427984C2 (de) * 1994-08-08 2003-07-03 Unaxis Deutschland Holding Vorrichtung zum Ein- und Ausschleusen von Werkstücken in eine Beschichtungskammer
US5830272A (en) * 1995-11-07 1998-11-03 Sputtered Films, Inc. System for and method of providing a controlled deposition on wafers
US6391690B2 (en) * 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US5863170A (en) * 1996-04-16 1999-01-26 Gasonics International Modular process system
US5944940A (en) * 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
US5961269A (en) * 1996-11-18 1999-10-05 Applied Materials, Inc. Three chamber load lock apparatus
US6315512B1 (en) * 1997-11-28 2001-11-13 Mattson Technology, Inc. Systems and methods for robotic transfer of workpieces between a storage area and a processing chamber
US6228773B1 (en) * 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
JP2000021871A (ja) * 1998-06-30 2000-01-21 Tokyo Electron Ltd プラズマ処理方法
US6162299A (en) * 1998-07-10 2000-12-19 Asm America, Inc. Multi-position load lock chamber
DE19835154A1 (de) * 1998-08-04 2000-02-10 Leybold Systems Gmbh Vorrichtung zur Beschichtung von Substraten in einer Vakuumkammer
US6517691B1 (en) * 1998-08-20 2003-02-11 Intevac, Inc. Substrate processing system
US6106634A (en) * 1999-02-11 2000-08-22 Applied Materials, Inc. Methods and apparatus for reducing particle contamination during wafer transport
US6153530A (en) * 1999-03-16 2000-11-28 Applied Materials, Inc. Post-etch treatment of plasma-etched feature surfaces to prevent corrosion
US6095741A (en) * 1999-03-29 2000-08-01 Lam Research Corporation Dual sided slot valve and method for implementing the same
US6610150B1 (en) * 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
US6429139B1 (en) * 1999-12-17 2002-08-06 Eaton Corporation Serial wafer handling mechanism
US6576062B2 (en) * 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US6409932B2 (en) * 2000-04-03 2002-06-25 Matrix Integrated Systems, Inc. Method and apparatus for increased workpiece throughput
JP2002026108A (ja) * 2000-07-12 2002-01-25 Tokyo Electron Ltd 被処理体の移載機構、処理システム及び移載機構の使用方法
US6564811B2 (en) * 2001-03-26 2003-05-20 Intel Corporation Method of reducing residue deposition onto ash chamber base surfaces
US6902947B2 (en) * 2001-05-07 2005-06-07 Applied Materials, Inc. Integrated method for release and passivation of MEMS structures
US6729824B2 (en) * 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US7006888B2 (en) * 2002-01-14 2006-02-28 Applied Materials, Inc. Semiconductor wafer preheating
US6962644B2 (en) * 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system

Also Published As

Publication number Publication date
WO2005067634A2 (en) 2005-07-28
TWI257647B (en) 2006-07-01
US20050205210A1 (en) 2005-09-22
TW200535928A (en) 2005-11-01
WO2005067634A3 (en) 2005-09-15
DE112005000153T5 (de) 2006-11-16
CN1910308A (zh) 2007-02-07
KR20060127019A (ko) 2006-12-11

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