JP2007518271A5 - - Google Patents

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Publication number
JP2007518271A5
JP2007518271A5 JP2006549311A JP2006549311A JP2007518271A5 JP 2007518271 A5 JP2007518271 A5 JP 2007518271A5 JP 2006549311 A JP2006549311 A JP 2006549311A JP 2006549311 A JP2006549311 A JP 2006549311A JP 2007518271 A5 JP2007518271 A5 JP 2007518271A5
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JP
Japan
Prior art keywords
fin
forming
gate
trench
semiconductor material
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JP2006549311A
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English (en)
Japanese (ja)
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JP2007518271A (ja
JP5270094B2 (ja
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Priority claimed from US10/754,540 external-priority patent/US7186599B2/en
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Publication of JP2007518271A publication Critical patent/JP2007518271A/ja
Publication of JP2007518271A5 publication Critical patent/JP2007518271A5/ja
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Publication of JP5270094B2 publication Critical patent/JP5270094B2/ja
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JP2006549311A 2004-01-12 2004-12-21 細型化されたボディを有する、狭いボディのダマシン・トライゲートFinFET Active JP5270094B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/754,540 2004-01-12
US10/754,540 US7186599B2 (en) 2004-01-12 2004-01-12 Narrow-body damascene tri-gate FinFET
PCT/US2004/043105 WO2005071727A1 (en) 2004-01-12 2004-12-21 Narrow-body damascene tri-gate finfet having thinned body

Publications (3)

Publication Number Publication Date
JP2007518271A JP2007518271A (ja) 2007-07-05
JP2007518271A5 true JP2007518271A5 (de) 2008-02-14
JP5270094B2 JP5270094B2 (ja) 2013-08-21

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ID=34739407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006549311A Active JP5270094B2 (ja) 2004-01-12 2004-12-21 細型化されたボディを有する、狭いボディのダマシン・トライゲートFinFET

Country Status (8)

Country Link
US (1) US7186599B2 (de)
JP (1) JP5270094B2 (de)
KR (1) KR101066271B1 (de)
CN (1) CN100505183C (de)
DE (1) DE112004002633B4 (de)
GB (1) GB2426124B (de)
TW (1) TWI350002B (de)
WO (1) WO2005071727A1 (de)

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KR100574971B1 (ko) * 2004-02-17 2006-05-02 삼성전자주식회사 멀티-게이트 구조의 반도체 소자 및 그 제조 방법
WO2006076151A2 (en) * 2004-12-21 2006-07-20 Carnegie Mellon University Lithography and associated methods, devices, and systems
US7323374B2 (en) * 2005-09-19 2008-01-29 International Business Machines Corporation Dense chevron finFET and method of manufacturing same
KR100696197B1 (ko) * 2005-09-27 2007-03-20 한국전자통신연구원 실리콘 기판을 이용한 다중 게이트 모스 트랜지스터 및 그제조 방법
US7326976B2 (en) * 2005-11-15 2008-02-05 International Business Machines Corporation Corner dominated trigate field effect transistor
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
US7791140B2 (en) * 2006-02-13 2010-09-07 Nxp B.V. Double-gate semiconductor devices having gates with different work functions and methods of manufacture thereof
US20090321830A1 (en) * 2006-05-15 2009-12-31 Carnegie Mellon University Integrated circuit device, system, and method of fabrication
US7923337B2 (en) * 2007-06-20 2011-04-12 International Business Machines Corporation Fin field effect transistor devices with self-aligned source and drain regions
US20110147804A1 (en) * 2009-12-23 2011-06-23 Rishabh Mehandru Drive current enhancement in tri-gate MOSFETS by introduction of compressive metal gate stress using ion implantation
TWI565078B (zh) * 2011-03-25 2017-01-01 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
CN102810476B (zh) 2011-05-31 2016-08-03 中国科学院微电子研究所 鳍式场效应晶体管的制造方法
CN103123900B (zh) * 2011-11-21 2015-09-02 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103123899B (zh) * 2011-11-21 2015-09-30 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103295899B (zh) * 2012-02-27 2016-03-30 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103456638B (zh) * 2012-06-05 2016-02-03 中芯国际集成电路制造(上海)有限公司 自对准GaAs FinFET结构及其制造方法
CN103579315B (zh) * 2012-07-25 2017-03-08 中国科学院微电子研究所 半导体器件及其制造方法
US8652891B1 (en) * 2012-07-25 2014-02-18 The Institute of Microelectronics Chinese Academy of Science Semiconductor device and method of manufacturing the same
US8847281B2 (en) * 2012-07-27 2014-09-30 Intel Corporation High mobility strained channels for fin-based transistors
CN103681329B (zh) * 2012-09-10 2017-07-11 中国科学院微电子研究所 半导体器件及其制造方法
KR101395026B1 (ko) * 2012-10-16 2014-05-15 경북대학교 산학협력단 질화물 반도체 소자 및 그 소자의 제조 방법
CN103854982B (zh) 2012-11-30 2016-09-28 中国科学院微电子研究所 半导体器件的制造方法
US9263554B2 (en) 2013-06-04 2016-02-16 International Business Machines Corporation Localized fin width scaling using a hydrogen anneal
KR102072410B1 (ko) 2013-08-07 2020-02-03 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9564445B2 (en) 2014-01-20 2017-02-07 International Business Machines Corporation Dummy gate structure for electrical isolation of a fin DRAM
CN105632936B (zh) * 2016-03-22 2018-10-16 上海华力微电子有限公司 一种双栅极鳍式场效应晶体管的制备方法

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JP4058751B2 (ja) * 2000-06-20 2008-03-12 日本電気株式会社 電界効果型トランジスタの製造方法
US6413802B1 (en) 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
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US6630388B2 (en) 2001-03-13 2003-10-07 National Institute Of Advanced Industrial Science And Technology Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
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