JP2007518267A - 液状前駆物質のための高性能蒸発器、及び、半導体の薄膜蒸着における複数の液状前駆物質の蒸発 - Google Patents

液状前駆物質のための高性能蒸発器、及び、半導体の薄膜蒸着における複数の液状前駆物質の蒸発 Download PDF

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JP2007518267A
JP2007518267A JP2006549286A JP2006549286A JP2007518267A JP 2007518267 A JP2007518267 A JP 2007518267A JP 2006549286 A JP2006549286 A JP 2006549286A JP 2006549286 A JP2006549286 A JP 2006549286A JP 2007518267 A JP2007518267 A JP 2007518267A
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gas
liquid
source
chamber
evaporation
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JP2007518267A5 (enExample
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リュー，ベンジャミン・ワイ・エイチ
マ，ヤミン
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エムエスピー・コーポレーション
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
    • B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
    • B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006549286A 2004-01-05 2004-12-15 液状前駆物質のための高性能蒸発器、及び、半導体の薄膜蒸着における複数の液状前駆物質の蒸発 Pending JP2007518267A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53428604P 2004-01-05 2004-01-05
US10/769,011 US20050147749A1 (en) 2004-01-05 2004-01-30 High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition
PCT/US2004/041944 WO2005068682A2 (en) 2004-01-05 2004-12-15 High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition

Publications (2)

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JP2007518267A true JP2007518267A (ja) 2007-07-05
JP2007518267A5 JP2007518267A5 (enExample) 2008-02-14

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JP2006549286A Pending JP2007518267A (ja) 2004-01-05 2004-12-15 液状前駆物質のための高性能蒸発器、及び、半導体の薄膜蒸着における複数の液状前駆物質の蒸発

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US (1) US20050147749A1 (enExample)
EP (1) EP1704267A2 (enExample)
JP (1) JP2007518267A (enExample)
WO (1) WO2005068682A2 (enExample)

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KR20200070363A (ko) * 2017-10-23 2020-06-17 엠 에스피 코포레이션 증기 발생 및 필름 증착 장치 및 방법
WO2022075111A1 (ja) * 2020-10-07 2022-04-14 東京エレクトロン株式会社 気化装置、ガス供給装置及びガス供給装置の制御方法
JP2023505780A (ja) * 2019-12-11 2023-02-13 ラム リサーチ コーポレーション 液体前駆体気化器

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TWI538737B (zh) 2007-08-31 2016-06-21 阿普托麥克股份有限公司 材料沉積總成
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JP2015501380A (ja) * 2011-10-17 2015-01-15 ブルックス インストゥルメント，リミティド ライアビリティ カンパニー 一体型マルチヘッド霧化器、気化システムおよび気化方法
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JP5889710B2 (ja) * 2012-05-16 2016-03-22 東京エレクトロン株式会社 成膜装置および成膜方法
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JP6675865B2 (ja) * 2015-12-11 2020-04-08 株式会社堀場エステック 液体材料気化装置
KR102483924B1 (ko) * 2016-02-18 2023-01-02 삼성전자주식회사 기화기 및 이를 구비하는 박막 증착 장치
US11117161B2 (en) 2017-04-05 2021-09-14 Nova Engineering Films, Inc. Producing thin films of nanoscale thickness by spraying precursor and supercritical fluid
US10981193B2 (en) 2017-04-05 2021-04-20 Nova Engineering Films, Inc. Depositing of material by spraying precursor using supercritical fluid
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KR20200087196A (ko) 2017-11-13 2020-07-20 옵토멕 인코포레이티드 에어로졸 스트림의 셔터링
CN109338338B (zh) * 2018-12-25 2023-07-14 西安电子科技大学 一种雾化辅助cvd薄膜沉积装置
US20220139730A1 (en) * 2019-01-31 2022-05-05 Lam Research Corporation Multi-channel liquid delivery system for advanced semiconductor applications
JP2021031769A (ja) * 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
US11661653B2 (en) * 2019-12-18 2023-05-30 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Vapor delivery systems for solid and liquid materials
KR102300561B1 (ko) * 2020-07-31 2021-09-13 삼성전자주식회사 증착 시스템 및 공정 시스템
KR20230143175A (ko) * 2021-02-12 2023-10-11 유제누스 인크. 고속 순환 증착을 위한 전구체 전달 시스템 및 방법
TWM633563U (zh) * 2021-03-02 2022-11-01 日商信越化學工業股份有限公司 製膜系統及製膜裝置
TW202247905A (zh) 2021-04-29 2022-12-16 美商阿普托麥克股份有限公司 用於氣溶膠噴射裝置之高可靠性鞘護輸送路徑
CN114892270A (zh) * 2022-04-07 2022-08-12 西安电子科技大学 一种具有冷壁分时分步输运功能的多雾化源Mist-CVD设备
CN114743900A (zh) * 2022-04-25 2022-07-12 北京北方华创微电子装备有限公司 汽化系统以及半导体工艺设备
FR3145099A1 (fr) * 2023-01-19 2024-07-26 Semco Technologies Chambre d'évaporation d'un dispositif évaporateur de composés chimiques

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KR20200070363A (ko) * 2017-10-23 2020-06-17 엠 에스피 코포레이션 증기 발생 및 필름 증착 장치 및 방법
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JP2023505780A (ja) * 2019-12-11 2023-02-13 ラム リサーチ コーポレーション 液体前駆体気化器
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WO2022075111A1 (ja) * 2020-10-07 2022-04-14 東京エレクトロン株式会社 気化装置、ガス供給装置及びガス供給装置の制御方法
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JP7589890B2 (ja) 2020-10-07 2024-11-26 株式会社フジキン 気化装置、ガス供給装置及びガス供給装置の制御方法

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US20050147749A1 (en) 2005-07-07
EP1704267A2 (en) 2006-09-27
WO2005068682A2 (en) 2005-07-28
WO2005068682A3 (en) 2006-02-23

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