JP2007517380A - 誘電体膜を処理するための方法とシステム - Google Patents
誘電体膜を処理するための方法とシステム Download PDFInfo
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- JP2007517380A JP2007517380A JP2006533950A JP2006533950A JP2007517380A JP 2007517380 A JP2007517380 A JP 2007517380A JP 2006533950 A JP2006533950 A JP 2006533950A JP 2006533950 A JP2006533950 A JP 2006533950A JP 2007517380 A JP2007517380 A JP 2007517380A
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- dielectric film
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- exposing
- containing material
- film
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Abstract
【解決手段】誘電体膜を処理するための方法とシステムは、誘電体膜の少なくとも一つの表面をCxHy含有材料に露出することを有する。xとyはそれぞれ1以上の整数である。エッチプロセスすなわちアッシングの結果、誘電体膜に形成された形態の露出表面は、ダメージを受けるか活性化するかして、汚染物質の保留・湿気の吸収・誘電率の上昇などを引き起こし得る。ダメージを受けた表面は、少なくとも、表面を修復して例えば誘電率を復活させる(すなわち誘電率を減少させる)か、表面を洗浄して汚染物質や湿気や残渣を取り去るかして処理する。さらに、膜中の形態のバリア層とメタリゼーションのための準備は、形態の側壁表面を被覆して、露出した空孔を閉じ、またバリア膜堆積用の表面を提供する処理を含んでもよい。
【選択図】
Description
本発明の目的の一つは、誘電体膜を処理することに関する従来技術における上述した問題または他の問題のいずれかを軽減するか除去することである。
Claims (48)
- 誘電体膜を処理する方法であり、
前記誘電体膜の少なくとも一つの表面をCxHy含有材料に露出する工程を有しており、
xとyはそれぞれ1以上の整数であり、前記誘電体膜はSiO2の誘電率値未満の誘電率値を有している、誘電体膜を処理する方法。 - 前記誘電体膜の少なくとも一つの前記表面を、窒素含有材料と塩素含有材料の少なくとも一つに露出することをさらに有している、請求項1に記載の方法。
- 前記誘電体膜を露出する前記工程は、1.6から2.7までの範囲にある誘電率を持つ誘電体膜を露出することを有している、請求項1に記載の方法。
- 前記誘電体膜を露出する前記工程は、多孔質誘電体膜と非多孔質誘電体膜の少なくとも一つを露出することを有している、請求項1に記載の方法。
- 前記多孔質誘電体膜を露出する前記工程は、単相材料と二相材料の少なくとも一つを露出することを有している、請求項1に記載の方法。
- 前記誘電体膜を露出する前記工程は、有機材料と無機材料の少なくとも一つを含んでいる膜を露出する工程を有している、請求項1に記載の方法。
- 膜を露出する前記工程は、無機有機ハイブリッド材料を含んでいる膜を露出することを有している、請求項6に記載の方法。
- 膜を露出する前記工程は、酸化有機シランを含んでいる膜を露出することを有している、請求項6に記載の方法。
- 膜を露出する前記工程は、水素シルセスキオキサンとメチルシルセスキオキサンの少なくとも一つを含んでいる膜を露出することを有している、請求項6に記載の方法。
- 膜を露出する前記工程は、ケイ酸ベース材料を含んでいる膜を露出することを有している、請求項6に記載の方法。
- 膜を露出する前記工程は、シリコンと炭素と酸素を含んでいる共同体膜を露出する工程を有している、請求項6に記載の方法。
- 共同体膜を露出する前記工程は、共同体膜中の水素を露出することを有している、請求項11に記載の方法。
- 前記誘電体膜を前記CxHy含有材料に露出する前記工程は、前記CxHy含有材料を、気相・液相・超臨界流体の少なくとも一つで導入する工程を有している、請求項1に記載の方法。
- 前記CxHy含有材料を前記超臨界流体で導入する前記工程は、前記CxHy含有材料を超臨界二酸化炭素で導入することを有している、請求項13に記載の方法。
- 前記誘電体膜を前記CxHy含有材料に露出する前記工程は、前記誘電体膜を、CH2含有材料とCH3含有材料の少なくとも一つに露出することを有している、請求項1または請求項2に記載の方法。
- 前記誘電体膜を前記CxHy含有材料に露出する前記工程は、前記誘電体膜を、TMCTSとOMCTSの少なくとも一つに露出することを有している、請求項1に記載の方法。
- 前記誘電体膜を前記CxHy含有材料に露出する前記工程は、前記誘電体膜を、ヘキサメチルジシラザン(HMDS)、トリメチルジシラザン(TMDS)、クロロトリメチルシラン(TMCS)、トリクロロメチルシラン(TCMS)、[C6H5Si(CH3)2]2NH、C15H29NSi、(CH3)2NHジメチルアミン、H2N(CH2)3Si(OC2H5)33−アミノプロピルトリエトキシシランの少なくとも一つに露出することを有している、請求項2に記載の方法。
- 前記基板上の前記誘電体膜を50Cから400Cまでの範囲にある温度に加熱する工程をさらに有している、請求項1に記載の方法。
- 前記誘電体膜を前記CxHy含有材料に露出する工程は、前記誘電体膜を修復する工程と前記誘電体膜を被覆する工程と前記誘電体膜を洗浄する工程の少なくとも一つを容易にする、請求項1または請求項2に記載の方法。
- 前記誘電体膜の少なくとも一つの表面をCxHy含有材料に露出する前記工程は、前記誘電体膜の少なくとも一つの表面を第一のCxHy含有材料に露出し、第二のCxHy含有材料に露出することを有している、請求項1に記載の方法。
- 基板上に誘電体膜を生成する方法であり、
前記基板上に前記誘電体膜を形成する工程と、
前記誘電体膜上にマスクを形成する工程と、
前記マスクにパターンを形成する工程と、
前記マスクの前記パターンを前記誘電体膜に転写することにより、前記誘電体膜に少なくとも一つの形態を形成する工程と、
前記誘電体膜の前記形態の側壁を処理化合物に露出する工程とを有し、前記処理化合物はCxHy含有材料を有し、xとyはそれぞれ1以上の整数である、方法。 - 前記形態の前記側壁を前記処理化合物に露出する工程をさらに有し、前記処理化合物はN含有材料とCl含有材料の少なくとも一つをさらに有している、請求項21に記載の方法。
- 前記基板上の前記誘電体膜を50Cから400Cまでの範囲にある温度に加熱する工程をさらに有している、請求項21または請求項22に記載の方法。
- 前記形態の前記側壁を前記CxHy含有材料に露出する前記工程は、前記形態の前記側壁をCH2含有材料とCH3含有材料の少なくとも一つに露出する工程を有している、請求項21または請求項22に記載の方法。
- 前記形態の前記側壁を前記CxHy含有材料に露出する前記工程は、前記形態の前記側壁をTMCTSとOMCTSの少なくとも一つに露出する工程を有している、請求項21に記載の方法。
- 前記誘電体膜中の前記形態の前記側壁を前記修復化合物に露出する前記工程は、前記誘電体膜を、ヘキサメチルジシラザン(HMDS)、トリメチルジシラザン(TMDS)、クロロトリメチルシラン(TMCS)、トリクロロメチルシラン(TCMS)、[C6H5Si(CH3)2]2NH、C15H29NSi、(CH3)2NHジメチルアミン、H2N(CH2)3Si(OC2H5)33−アミノプロピルトリエトキシシランの少なくとも一つに露出することを有している、請求項22に記載の方法。
- 誘電体膜を処理する方法であり、
前記誘電体膜を処理化合物に露出する工程を有し、前記処理化合物はCxHy含有材料を有し、xとyはそれぞれ1以上の整数である、方法。 - 前記誘電体膜を前記処理化合物に露出する工程をさらに有し、前記処理化合物はN含有材料とCl含有材料の少なくとも一つをさらに有している、請求項27に記載の方法。
- 前記誘電体膜を前記処理化合物に露出する工程は、前記誘電体膜を修復する工程と前記誘電体膜を被覆する工程と前記誘電体膜を洗浄する工程の少なくとも一つを容易にする、請求項27または請求項28に記載の方法。
- 処理された誘電体膜であり、
誘電体膜と、
前記誘電体膜中に形成された形態と、
前記形態の表面を修復するための手段とを有している、誘電体膜。 - 被覆された誘電体膜であり、
多孔質誘電体膜と、
前記多孔質誘電体膜中に形成された形態と、
前記多孔質誘電体膜中の前記形態の表面上の露出された空孔を被覆するための手段とを有している、誘電体膜。 - 基板上の誘電体膜を処理するための処理システムであり、
処理チャンバーと、
前記処理チャンバーに連結された、前記基板上の前記誘電体膜を処理するために前記処理チャンバーに処理化合物を供給するように構成された流体分配システムとを有し、前記処理化合物はCxHy含有材料を有し、xとyはそれぞれ1以上の整数である、処理システム。 - 前記処理化合物はN含有材料とCl含有材料の少なくとも一つをさらに有している、請求項32に記載のシステム。
- 処理化合物は前記誘電体膜を修復する工程と前記誘電体膜を被覆する工程と前記誘電体膜を洗浄する工程の少なくとも一つを容易にする、請求項32または請求項33に記載のシステム。
- 前記CxHy含有材料はCH2含有材料とCH3含有材料の少なくとも一つを有している、請求項32または請求項33に記載の処理システム。
- 前記CxHy含有材料はTMCTSとOMCTSの少なくとも一つを有している、請求項32に記載の処理システム。
- 前記処理化合物は、ヘキサメチルジシラザン(HMDS)、トリメチルジシラザン(TMDS)、クロロトリメチルシラン(TMCS)、トリクロロメチルシラン(TCMS)、[C6H5Si(CH3)2]2NH、C15H29NSi、(CH3)2NHジメチルアミン、H2N(CH2)3Si(OC2H5)33−アミノプロピルトリエトキシシランの少なくとも一つを有している、請求項33に記載の処理システム。
- 前記処理チャンバーは前記基板を支持するように構成された基板ホルダーをさらに有している、請求項32に記載の処理システム。
- 前記基板ホルダーはさらに、前記基板を50Cから400Cまでの範囲にある温度に加熱するように構成されている、請求項38に記載の処理システム。
- 前記処理チャンバーは超臨界処理チャンバーを有し、前記流体分配システムは前記処理チャンバーに前記超臨界流体と前記処理化合物を供給するように構成されている、請求項32に記載の処理システム。
- 前記処理チャンバーは蒸気処理処理チャンバーを有し、前記流体分配システムは前記処理チャンバーに前記処理化合物の蒸気を供給するように構成されている、請求項32に記載の処理システム。
- 前記処理チャンバーは液浸槽を有し、前記流体分配システムは前記処理チャンバーに液化処理化合物を供給するように構成されている、請求項32に記載の処理システム。
- 前記処理チャンバーは液相処理システムを有し、前記流体分配システムは前記誘電体膜に前記処理化合物を分配するように構成されている、請求項32に記載の処理システム。
- 前記液相処理システムは、前記処理化合物を前記分配する間、前記誘電体膜と共に前記基板を支持し回転させるように構成された基板ホルダーを有している、請求項38に記載の処理システム。
- 基板上の誘電体膜を処理するための処理システムであり、
前記誘電体膜を処理化合物に露出するための手段を有し、前記処理化合物はCxHy含有材料を有し、xとyはそれぞれ1以上の整数である、処理システム。 - 前記処理化合物はN含有材料とCl含有材料の少なくとも一つをさらに有している、請求項45に記載の処理システム。
- 前記基板上の前記誘電体膜を50Cから200Cまでの範囲にある温度に加熱するための手段をさらに有している、請求項45の処理システム。
- 処理された誘電体膜であり、
表面領域を有する誘電体膜と、
low−k膜の前記表面領域に位置しているCxHy含有材料とを有している、誘電体膜。
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JP2007048785A (ja) * | 2005-08-05 | 2007-02-22 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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Publication number | Publication date |
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EP1671360A2 (en) | 2006-06-21 |
CN101416277B (zh) | 2011-06-22 |
US7553769B2 (en) | 2009-06-30 |
US20050077597A1 (en) | 2005-04-14 |
KR101026211B1 (ko) | 2011-03-31 |
CN101416277A (zh) | 2009-04-22 |
JP4847332B2 (ja) | 2011-12-28 |
WO2005038863A3 (en) | 2009-04-02 |
TWI299178B (en) | 2008-07-21 |
KR20060126933A (ko) | 2006-12-11 |
TW200522141A (en) | 2005-07-01 |
EP1671360A4 (en) | 2010-04-14 |
WO2005038863A2 (en) | 2005-04-28 |
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