JP2007513498A5 - - Google Patents
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- Publication number
- JP2007513498A5 JP2007513498A5 JP2006538863A JP2006538863A JP2007513498A5 JP 2007513498 A5 JP2007513498 A5 JP 2007513498A5 JP 2006538863 A JP2006538863 A JP 2006538863A JP 2006538863 A JP2006538863 A JP 2006538863A JP 2007513498 A5 JP2007513498 A5 JP 2007513498A5
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect device
- compound
- tasin
- tan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims 11
- 238000000034 method Methods 0.000 claims 11
- 150000001875 compounds Chemical class 0.000 claims 10
- 229910004200 TaSiN Inorganic materials 0.000 claims 8
- 239000002243 precursor Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 239000007983 Tris buffer Substances 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- QKIUAMUSENSFQQ-UHFFFAOYSA-N dimethylazanide Chemical compound C[N-]C QKIUAMUSENSFQQ-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 239000002178 crystalline material Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/712,575 US20050104142A1 (en) | 2003-11-13 | 2003-11-13 | CVD tantalum compounds for FET get electrodes |
| PCT/EP2004/052927 WO2005047561A1 (en) | 2003-11-13 | 2004-11-11 | Cvd tantalum compounds for fet gate electrodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007513498A JP2007513498A (ja) | 2007-05-24 |
| JP2007513498A5 true JP2007513498A5 (enExample) | 2007-11-29 |
Family
ID=34573575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006538863A Pending JP2007513498A (ja) | 2003-11-13 | 2004-11-11 | FETゲート電極用のCVDタンタル化合物(TaおよびNを含む化合物の化学的気相堆積方法および半導体電界効果デバイス) |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20050104142A1 (enExample) |
| EP (1) | EP1699945A1 (enExample) |
| JP (1) | JP2007513498A (enExample) |
| KR (1) | KR20060112659A (enExample) |
| CN (1) | CN1902337A (enExample) |
| IL (1) | IL175594A0 (enExample) |
| TW (1) | TW200516167A (enExample) |
| WO (1) | WO2005047561A1 (enExample) |
Families Citing this family (60)
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| US6671223B2 (en) * | 1996-12-20 | 2003-12-30 | Westerngeco, L.L.C. | Control devices for controlling the position of a marine seismic streamer |
| US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| JP2005504885A (ja) | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
| US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7780785B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US7204886B2 (en) | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
| US7081271B2 (en) | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
| AU2003238853A1 (en) * | 2002-01-25 | 2003-09-02 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
| US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US6972267B2 (en) | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
| US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| US6915592B2 (en) | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
| US20040069227A1 (en) * | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
| US6905737B2 (en) * | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
| US20040177813A1 (en) | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
| US7342984B1 (en) | 2003-04-03 | 2008-03-11 | Zilog, Inc. | Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character |
| US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| JP2007523994A (ja) | 2003-06-18 | 2007-08-23 | アプライド マテリアルズ インコーポレイテッド | バリヤ物質の原子層堆積 |
| US7067422B2 (en) * | 2004-03-31 | 2006-06-27 | Tokyo Electron Limited | Method of forming a tantalum-containing gate electrode structure |
| US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
| US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| US7115959B2 (en) * | 2004-06-22 | 2006-10-03 | International Business Machines Corporation | Method of forming metal/high-k gate stacks with high mobility |
| US7241686B2 (en) * | 2004-07-20 | 2007-07-10 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA |
| US7825025B2 (en) * | 2004-10-04 | 2010-11-02 | Texas Instruments Incorporated | Method and system for improved nickel silicide |
| KR101283835B1 (ko) * | 2005-06-29 | 2013-07-08 | 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 3원 막의 증착 방법 |
| JP5109299B2 (ja) * | 2005-07-07 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜方法 |
| US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
| US7464917B2 (en) * | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
| JP2007113103A (ja) | 2005-10-24 | 2007-05-10 | Tokyo Electron Ltd | 成膜方法、成膜装置及び記憶媒体 |
| US20070119370A1 (en) | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
| JP4967407B2 (ja) * | 2006-03-29 | 2012-07-04 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
| EP2037491A1 (en) | 2006-06-21 | 2009-03-18 | Tokyo Electron Limited | METHOD OF FORMING TaSiN FILM |
| US7601648B2 (en) | 2006-07-31 | 2009-10-13 | Applied Materials, Inc. | Method for fabricating an integrated gate dielectric layer for field effect transistors |
| US7775508B2 (en) * | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
| US8821637B2 (en) * | 2007-01-29 | 2014-09-02 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
| US20080290416A1 (en) * | 2007-05-21 | 2008-11-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-k metal gate devices and methods for making the same |
| US7678298B2 (en) * | 2007-09-25 | 2010-03-16 | Applied Materials, Inc. | Tantalum carbide nitride materials by vapor deposition processes |
| US7585762B2 (en) * | 2007-09-25 | 2009-09-08 | Applied Materials, Inc. | Vapor deposition processes for tantalum carbide nitride materials |
| US7824743B2 (en) * | 2007-09-28 | 2010-11-02 | Applied Materials, Inc. | Deposition processes for titanium nitride barrier and aluminum |
| US20100062149A1 (en) * | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
| US8491967B2 (en) | 2008-09-08 | 2013-07-23 | Applied Materials, Inc. | In-situ chamber treatment and deposition process |
| US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
| US9299802B2 (en) | 2012-10-28 | 2016-03-29 | International Business Machines Corporation | Method to improve reliability of high-K metal gate stacks |
| US8999831B2 (en) | 2012-11-19 | 2015-04-07 | International Business Machines Corporation | Method to improve reliability of replacement gate device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153519A (en) * | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
| US6015917A (en) * | 1998-01-23 | 2000-01-18 | Advanced Technology Materials, Inc. | Tantalum amide precursors for deposition of tantalum nitride on a substrate |
| US6396147B1 (en) * | 1998-05-16 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with metal-oxide conductors |
| US6410433B1 (en) * | 1999-04-27 | 2002-06-25 | Tokyo Electron Limited | Thermal CVD of TaN films from tantalum halide precursors |
| US6383879B1 (en) * | 1999-12-03 | 2002-05-07 | Agere Systems Guardian Corp. | Semiconductor device having a metal gate with a work function compatible with a semiconductor device |
| US6531354B2 (en) * | 2000-01-19 | 2003-03-11 | North Carolina State University | Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors |
| US6300208B1 (en) * | 2000-02-16 | 2001-10-09 | Ultratech Stepper, Inc. | Methods for annealing an integrated device using a radiant energy absorber layer |
| KR100372639B1 (ko) * | 2000-06-21 | 2003-02-17 | 주식회사 하이닉스반도체 | 모스팻 소자의 제조방법 |
| JP3963078B2 (ja) * | 2000-12-25 | 2007-08-22 | 株式会社高純度化学研究所 | ターシャリーアミルイミドトリス(ジメチルアミド)タンタルとその製造方法及びそれを用いたmocvd用原料溶液並びにそれを用いた窒化タンタル膜の形成方法 |
| US6518106B2 (en) * | 2001-05-26 | 2003-02-11 | Motorola, Inc. | Semiconductor device and a method therefor |
| US6624526B2 (en) * | 2001-06-01 | 2003-09-23 | International Business Machines Corporation | Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating |
| US6512266B1 (en) * | 2001-07-11 | 2003-01-28 | International Business Machines Corporation | Method of fabricating SiO2 spacers and annealing caps |
| US6423619B1 (en) * | 2001-11-30 | 2002-07-23 | Motorola, Inc. | Transistor metal gate structure that minimizes non-planarity effects and method of formation |
| US7186385B2 (en) * | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| US7163721B2 (en) * | 2003-02-04 | 2007-01-16 | Tegal Corporation | Method to plasma deposit on organic polymer dielectric film |
| US6727560B1 (en) * | 2003-02-10 | 2004-04-27 | Advanced Micro Devices, Inc. | Engineered metal gate electrode |
-
2003
- 2003-11-13 US US10/712,575 patent/US20050104142A1/en not_active Abandoned
-
2004
- 2004-10-28 TW TW093132794A patent/TW200516167A/zh unknown
- 2004-11-11 JP JP2006538863A patent/JP2007513498A/ja active Pending
- 2004-11-11 CN CNA2004800334454A patent/CN1902337A/zh active Pending
- 2004-11-11 EP EP04818420A patent/EP1699945A1/en not_active Withdrawn
- 2004-11-11 KR KR1020067009312A patent/KR20060112659A/ko not_active Ceased
- 2004-11-11 WO PCT/EP2004/052927 patent/WO2005047561A1/en not_active Ceased
-
2005
- 2005-07-13 US US11/180,384 patent/US20050250318A1/en not_active Abandoned
-
2006
- 2006-05-11 IL IL175594A patent/IL175594A0/en unknown
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