JP2007513498A5 - - Google Patents

Download PDF

Info

Publication number
JP2007513498A5
JP2007513498A5 JP2006538863A JP2006538863A JP2007513498A5 JP 2007513498 A5 JP2007513498 A5 JP 2007513498A5 JP 2006538863 A JP2006538863 A JP 2006538863A JP 2006538863 A JP2006538863 A JP 2006538863A JP 2007513498 A5 JP2007513498 A5 JP 2007513498A5
Authority
JP
Japan
Prior art keywords
field effect
effect device
compound
tasin
tan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006538863A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007513498A (ja
Filing date
Publication date
Priority claimed from US10/712,575 external-priority patent/US20050104142A1/en
Application filed filed Critical
Publication of JP2007513498A publication Critical patent/JP2007513498A/ja
Publication of JP2007513498A5 publication Critical patent/JP2007513498A5/ja
Pending legal-status Critical Current

Links

JP2006538863A 2003-11-13 2004-11-11 FETゲート電極用のCVDタンタル化合物(TaおよびNを含む化合物の化学的気相堆積方法および半導体電界効果デバイス) Pending JP2007513498A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/712,575 US20050104142A1 (en) 2003-11-13 2003-11-13 CVD tantalum compounds for FET get electrodes
PCT/EP2004/052927 WO2005047561A1 (en) 2003-11-13 2004-11-11 Cvd tantalum compounds for fet gate electrodes

Publications (2)

Publication Number Publication Date
JP2007513498A JP2007513498A (ja) 2007-05-24
JP2007513498A5 true JP2007513498A5 (enExample) 2007-11-29

Family

ID=34573575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006538863A Pending JP2007513498A (ja) 2003-11-13 2004-11-11 FETゲート電極用のCVDタンタル化合物(TaおよびNを含む化合物の化学的気相堆積方法および半導体電界効果デバイス)

Country Status (8)

Country Link
US (2) US20050104142A1 (enExample)
EP (1) EP1699945A1 (enExample)
JP (1) JP2007513498A (enExample)
KR (1) KR20060112659A (enExample)
CN (1) CN1902337A (enExample)
IL (1) IL175594A0 (enExample)
TW (1) TW200516167A (enExample)
WO (1) WO2005047561A1 (enExample)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6671223B2 (en) * 1996-12-20 2003-12-30 Westerngeco, L.L.C. Control devices for controlling the position of a marine seismic streamer
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド マテリアルズ インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
AU2003238853A1 (en) * 2002-01-25 2003-09-02 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
JP2007523994A (ja) 2003-06-18 2007-08-23 アプライド マテリアルズ インコーポレイテッド バリヤ物質の原子層堆積
US7067422B2 (en) * 2004-03-31 2006-06-27 Tokyo Electron Limited Method of forming a tantalum-containing gate electrode structure
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7115959B2 (en) * 2004-06-22 2006-10-03 International Business Machines Corporation Method of forming metal/high-k gate stacks with high mobility
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US7825025B2 (en) * 2004-10-04 2010-11-02 Texas Instruments Incorporated Method and system for improved nickel silicide
KR101283835B1 (ko) * 2005-06-29 2013-07-08 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 3원 막의 증착 방법
JP5109299B2 (ja) * 2005-07-07 2012-12-26 東京エレクトロン株式会社 成膜方法
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7464917B2 (en) * 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
JP2007113103A (ja) 2005-10-24 2007-05-10 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体
US20070119370A1 (en) 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
JP4967407B2 (ja) * 2006-03-29 2012-07-04 富士通セミコンダクター株式会社 半導体装置の製造方法
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
EP2037491A1 (en) 2006-06-21 2009-03-18 Tokyo Electron Limited METHOD OF FORMING TaSiN FILM
US7601648B2 (en) 2006-07-31 2009-10-13 Applied Materials, Inc. Method for fabricating an integrated gate dielectric layer for field effect transistors
US7775508B2 (en) * 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US8821637B2 (en) * 2007-01-29 2014-09-02 Applied Materials, Inc. Temperature controlled lid assembly for tungsten nitride deposition
US20080290416A1 (en) * 2007-05-21 2008-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. High-k metal gate devices and methods for making the same
US7678298B2 (en) * 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7585762B2 (en) * 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US7824743B2 (en) * 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US20100062149A1 (en) * 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US9299802B2 (en) 2012-10-28 2016-03-29 International Business Machines Corporation Method to improve reliability of high-K metal gate stacks
US8999831B2 (en) 2012-11-19 2015-04-07 International Business Machines Corporation Method to improve reliability of replacement gate device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153519A (en) * 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6396147B1 (en) * 1998-05-16 2002-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with metal-oxide conductors
US6410433B1 (en) * 1999-04-27 2002-06-25 Tokyo Electron Limited Thermal CVD of TaN films from tantalum halide precursors
US6383879B1 (en) * 1999-12-03 2002-05-07 Agere Systems Guardian Corp. Semiconductor device having a metal gate with a work function compatible with a semiconductor device
US6531354B2 (en) * 2000-01-19 2003-03-11 North Carolina State University Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors
US6300208B1 (en) * 2000-02-16 2001-10-09 Ultratech Stepper, Inc. Methods for annealing an integrated device using a radiant energy absorber layer
KR100372639B1 (ko) * 2000-06-21 2003-02-17 주식회사 하이닉스반도체 모스팻 소자의 제조방법
JP3963078B2 (ja) * 2000-12-25 2007-08-22 株式会社高純度化学研究所 ターシャリーアミルイミドトリス(ジメチルアミド)タンタルとその製造方法及びそれを用いたmocvd用原料溶液並びにそれを用いた窒化タンタル膜の形成方法
US6518106B2 (en) * 2001-05-26 2003-02-11 Motorola, Inc. Semiconductor device and a method therefor
US6624526B2 (en) * 2001-06-01 2003-09-23 International Business Machines Corporation Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
US6512266B1 (en) * 2001-07-11 2003-01-28 International Business Machines Corporation Method of fabricating SiO2 spacers and annealing caps
US6423619B1 (en) * 2001-11-30 2002-07-23 Motorola, Inc. Transistor metal gate structure that minimizes non-planarity effects and method of formation
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7163721B2 (en) * 2003-02-04 2007-01-16 Tegal Corporation Method to plasma deposit on organic polymer dielectric film
US6727560B1 (en) * 2003-02-10 2004-04-27 Advanced Micro Devices, Inc. Engineered metal gate electrode

Similar Documents

Publication Publication Date Title
JP2007513498A5 (enExample)
US7494884B2 (en) SiGe selective growth without a hard mask
JP6218384B2 (ja) タングステンゲート電極を備えた半導体装置の製造方法
JP5890386B2 (ja) ケイ素含有フィルムの低温堆積
US8101474B2 (en) Structure and method of forming buried-channel graphene field effect device
US8809152B2 (en) Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
US7871942B2 (en) Methods for manufacturing high dielectric constant film
US9583392B2 (en) Carbon layer and method of manufacture
CN103681285A (zh) 包括无氟钨阻挡层的半导体器件及其制造方法
JP2007513498A (ja) FETゲート電極用のCVDタンタル化合物(TaおよびNを含む化合物の化学的気相堆積方法および半導体電界効果デバイス)
KR102358527B1 (ko) 선택적 증착에 의한 실리사이드 막들
US7605436B2 (en) Manufacture of semiconductor device having insulation film of high dielectric constant
WO2005041252B1 (en) SPLIT POLY-SiGe/POLY-Si ALLOY GATE STACK
TWI744233B (zh) 積體電路的製造方法及半導體加工反應器系統
US10964544B2 (en) Contact integration and selective silicide formation methods
Kim et al. Reliability Improvement of High Mobility Oxide TFTs Based on Hydrogen-Resistant PEALD Al2O3 Gate Insulators Grown with N2O Plasma
JP2005340816A5 (enExample)
CN101924034A (zh) 调节高k栅介质和金属栅结构pMOSFET器件阈值电压的方法
JP4051063B2 (ja) 半導体装置の製造方法
US11075083B2 (en) Si-passivated GE gate stack
TW202531331A (zh) 用於邏輯或記憶體裝置中之接點形成之選擇性處理氮化矽
US20070221968A1 (en) Transistor of semiconductor device and method for manufacturing the same
Oruç ZnO, TiO² and Exotic Materials for Low Temperature Thin Film Electronic Devices
KR20050105162A (ko) 반도체 장치와 반도체 장치의 제조 방법