JP2007512430A - 加工物上にニッケル鉄を無電解析出させるための組成物及びその析出方法 - Google Patents
加工物上にニッケル鉄を無電解析出させるための組成物及びその析出方法 Download PDFInfo
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- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical group [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 230000008021 deposition Effects 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000000151 deposition Methods 0.000 claims abstract description 88
- 238000005253 cladding Methods 0.000 claims abstract description 54
- 230000004888 barrier function Effects 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 239000011810 insulating material Substances 0.000 claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 16
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910001413 alkali metal ion Inorganic materials 0.000 claims abstract description 11
- 239000008139 complexing agent Substances 0.000 claims abstract description 10
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 9
- 229910001453 nickel ion Inorganic materials 0.000 claims abstract description 9
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 8
- 230000004907 flux Effects 0.000 claims abstract description 7
- 238000001556 precipitation Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 31
- 230000004913 activation Effects 0.000 claims description 23
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 8
- 229910001448 ferrous ion Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 7
- 150000001340 alkali metals Chemical class 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical group [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- 239000004471 Glycine Substances 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- YJROYUJAFGZMJA-UHFFFAOYSA-N boron;morpholine Chemical compound [B].C1COCCN1 YJROYUJAFGZMJA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims description 2
- 229910000358 iron sulfate Inorganic materials 0.000 claims description 2
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 claims description 2
- SQZYOZWYVFYNFV-UHFFFAOYSA-L iron(2+);disulfamate Chemical compound [Fe+2].NS([O-])(=O)=O.NS([O-])(=O)=O SQZYOZWYVFYNFV-UHFFFAOYSA-L 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 2
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 claims description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- -1 potassium (K +) ions Chemical class 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
Description
以下の詳細な説明は、例示にすぎず、本発明やその使用法及び利用分野を限定するものではない。更に、前述の技術分野、背景技術、要約又は下記の詳細な説明で明示又は示唆された理論により拘束されることを意図していない。
Claims (10)
- 加工物上にニッケル鉄を無電解析出させるのに使用される析出液において、
ニッケルイオン源、第一鉄イオン源、錯化剤、還元剤、及びpH調節剤から調製され、実質的にはアルカリ金属イオンを含まない析出液。 - 請求項1記載の析出液において、
前記ニッケルイオン源は、スルファミン酸ニッケル、塩化ニッケル及び硫酸ニッケルを含む群から選択され、前記第一鉄イオン源は、スルファミン酸鉄、塩化鉄及び硫酸鉄を含む群から選択され、前記錯化剤は、グリシン、酒石酸、リンゴ酸、クエン酸、酒石酸アンモニウム、クエン酸アンモニウム、酢酸アンモニウム及び酢酸を含む群から選択され、前記還元剤は、ジメチルアミノボラン、モルホリンボラン、グリオキシル酸及び次亜リン酸アンモニウムを含む群から選択され、前記析出液は、約7.5〜約9.5の範囲のpHを有し、前記pH調節剤は、エレクトロニクス用水酸化テトラメチルアンモニウム及び水酸化アンモニウムを含む群から選択される析出液。 - 加工物上にニッケル鉄を無電解析出させる方法において、
ニッケルイオン源、第一鉄イオン源、錯化剤、還元剤及びpH調節剤を含み、実質的にはアルカリ金属を含まない析出液を調製するステップと、
前記実質的にはアルカリ金属を含まない析出液を約35℃〜約65℃の範囲にまで昇温させるステップと、
前記実質的にはアルカリ金属を含まない析出液に前記加工物を接触させるステップと
を備える方法。 - 磁気エレクトロニクス装置で使用されるフラックス集中システムを作製する方法において、
加工物を提供するステップと、
前記加工物上に絶縁材料の層を形成するステップと、
前記絶縁材料の一部を除去して絶縁層に溝を形成するステップと、
前記溝内にバリア層を析出させるステップと、
前記バリア層上にニッケル鉄クラッド層を析出させるステップと
を備え、
前記ニッケル鉄クラッド層を析出させるステップの後、前記溝付近の絶縁材料の層は、原子約1×1011個/cm2未満のアルカリ金属イオン濃度を有する方法。 - 請求項4記載の方法において、
前記バリア層を析出させるステップの後で、かつ前記ニッケル鉄クラッド層を析出させるステップの前にシード層を形成するステップと、
前記シード層を形成するステップの後で、かつ前記ニッケル鉄クラッド層を析出させるステップの前に活性化層を形成するステップと
を更に備える方法。 - 請求項4記載の方法において、
前記バリア層を析出させるステップは、タンタル、窒化タンタル、チタン、窒化チタン、窒化タンタルケイ素、コバルト、ルテニウム、ロジウム及びパラジウムを含む群から選択される少なくとも1種類の材料を含むバリア層を析出させるステップからなる方法。 - 請求項4記載の方法において、
前記ニッケル鉄クラッド層を析出させるステップは、無電解析出によりニッケル鉄クラッド層を析出させるステップからなり、前記無電解析出によりニッケル鉄クラッド層を析出させるステップは、ニッケルイオン源、第一鉄イオン源、錯化剤、還元剤及びpH調節剤を含む無電解メッキ液を用いて析出させるステップからなり、前記無電解析出液は、実質的にはアルカリ金属イオンを含まず、前記無電解析出によりニッケル鉄クラッド層を析出させるステップは、約7.5〜約9.5の範囲のpHを有する無電解メッキ液を用いて析出させるステップからなる方法。 - 請求項4記載の方法において、
前記ニッケル鉄クラッド層を析出させるステップは、前記ニッケル鉄クラッド層を約5〜約40nmの範囲の厚さに析出させるステップからなり、前記ニッケル鉄クラッド層は、約70〜約90原子重量%のニッケルと、約10〜約30原子重量%の第一鉄と、約1〜約15原子重量%のホウ素及びリンのうちの少なくとも1種類とからなる成分を含む方法。 - 磁気エレクトロニクス装置で使用されるディジット線を作製する方法において、
基板を提供するステップと、
前記基板上に絶縁材料層を形成するステップと、
前記絶縁材料層の一部を除去して同絶縁材料層に溝を形成するステップと、
前記溝内に第1のバリア層を析出させるステップと、
無電解析出により前記バリア層上にニッケル鉄クラッド層を析出させるステップと、
前記ニッケル鉄クラッド層上に第2のバリア層を析出させるステップと、
前記第2のバリア層上及び前記溝の内側に導体配線を形成するステップと
を備え、
無電解析出により前記ニッケル鉄クラッド層を析出させるステップの後、前記溝付近の絶縁材料層は、原子約1×1011個/cm2未満のアルカリ金属イオン濃度を有する方法。 - 磁気エレクトロニクス装置で使用されるビット線を作製する方法において、
基板を提供するステップと、
前記基板上に絶縁材料層を形成するステップと、
前記絶縁材料層の一部を除去して同絶縁材料層に溝を形成するステップであって、前記溝が底面及びそれに一体化された側壁を有するステップと、
前記溝の底面及び側壁を覆うように第1のバリア層を析出させるステップと、
無電解メッキにより前記バリア層上に第1のニッケル鉄クラッド層を析出させるステップであって、前記第1のニッケル鉄クラッド層が底面及びそれに一体化された側壁を有し、前記ニッケル鉄クラッド層の底面が前記溝の底面付近に位置するステップと、
前記第1のニッケル鉄クラッド層の底面を除去するステップと、
前記ニッケル鉄クラッド層の側壁及び前記溝の底面を覆うように第2のバリア層を析出させるステップと、
前記第2のバリア層上及び前記溝の内側を覆うように導体配線を形成するステップと、
無電解析出により前記導体配線上に第2のニッケル鉄クラッド層を析出させるステップと
を備え、
無電解析出により前記第1のニッケル鉄クラッド層を析出させるステップの後、前記溝付近の絶縁材料層は、原子約1×1011個/cm2未満のアルカリ金属イオン濃度を有する方法。
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US10/702,909 US20050095855A1 (en) | 2003-11-05 | 2003-11-05 | Compositions and methods for the electroless deposition of NiFe on a work piece |
PCT/US2004/034832 WO2005048275A2 (en) | 2003-11-05 | 2004-10-20 | COMPOSITIONS AND METHODS FOR THE ELECTROLESS DEPOSITION OF NiFe ON A WORK PIECE |
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US (1) | US20050095855A1 (ja) |
JP (1) | JP2007512430A (ja) |
KR (1) | KR20060118460A (ja) |
CN (1) | CN100563849C (ja) |
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WO (1) | WO2005048275A2 (ja) |
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US20050095855A1 (en) | 2005-05-05 |
WO2005048275A2 (en) | 2005-05-26 |
WO2005048275A3 (en) | 2006-02-09 |
TW200526815A (en) | 2005-08-16 |
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