JP2007504671A - high−kゲート誘電体と関連の構造を有するCMOSゲートを形成するための、異なる仕事関数を有する金属を統合する方法 - Google Patents
high−kゲート誘電体と関連の構造を有するCMOSゲートを形成するための、異なる仕事関数を有する金属を統合する方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 130
- 239000002184 metal Substances 0.000 title claims abstract description 130
- 238000000034 method Methods 0.000 title claims abstract description 45
- 150000002739 metals Chemical class 0.000 title description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 26
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 26
- 150000004767 nitrides Chemical class 0.000 claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 abstract description 12
- 239000007943 implant Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 description 14
- 238000002513 implantation Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
Description
Claims (10)
- 基板(202)のNMOS領域(210)とPMOS領域(212)上に誘電体層(204)を堆積する(150)ステップと、
前記誘電体層(204)上に第1金属層(206)を堆積する(150)ステップと、
前記基板(202)の前記NMOS領域(210)に窒素を注入する(152)ステップと、
前記第1金属層(206)の第1部を金属酸化物層(220)に変え、かつ、前記第1金属層(206)の第2部を金属窒化物層(218)に変える(154)ステップと、
NMOSゲート(226)とPMOSゲート(228)を形成するステップとを含み、前記NMOSゲート(226)は前記金属窒化物層(218)のセグメント(234)を含み、前記PMOSゲート(228)は前記金属酸化物層(220)のセグメント(242)を含む、方法。 - 前記第1金属層(206)を前記金属酸化物層(220)に変えるステップ(154)において、高温アニールを利用する、請求項1に記載の方法。
- 誘電体層(204)を基板(202)のNMOS領域(210)とPMOS領域(212)上に堆積する(150)ステップと、前記誘電体層(204)上に第1金属層(206)を堆積するステップ(150)と、を含む方法であって、前記方法は、
前記基板(202)の前記NMOS領域(210)に窒素を注入し(152)、前記第1金属層(206)の第1部分を金属酸化物層(220)に変え、かつ、前記第1金属層(206)の第2部分を金属窒化物層(218)に変え、NMOSゲート(226)とPMOSゲート(228)を形成することを特徴とし、前記NMOSゲート(226)は前記金属窒化物層(218)のセグメント(234)を含み、前記PMOSゲート(228)は前記金属酸化物層(220)のセグメント(242)を含む、方法。 - 前記第1金属層の第1部分を前記金属酸化物層(220)に変えるステップ(154)において、高温アニールを利用する、請求項3に記載の方法。
- 前記第1金属層(206)の前記第1部分を変える前記ステップ(154)の後で、かつ、前記NMOSゲート(226)と前記PMOSゲート(228)を形成する(156)ステップの前に、前記基板(202)の前記PMOS領域(212)にP型ドーパントを注入する(156)ステップを更に含む、請求項3に記載の方法。
- 前記第1金属層(206)を堆積する(150)ステップの後で、かつ、前記NMOS領域(210)に前記窒素を注入する(152)前記ステップの前に、前記第1金属層(206)上に第2金属層(208)を堆積する(150)ステップを更に含む、請求項3に記載の方法。
- 前記NMOS領域(210)に前記窒素を注入する(152)前記ステップは、前記第1金属層(206)の前記第1部分に前記窒素を注入せずに、前記第1金属層(206)の前記第2部分に前記窒素を注入するステップを含む、請求項3に記載の方法。
- 前記PMOSゲート(228)のゲート電極は、前記第2金属層(208)のセグメントを含み、前記NMOSゲート(226)のゲート電極は前記金属窒化物層(218)の前記セグメント(234)を含む、請求項6に記載の方法。
- 前記第1金属層(206)は、ハフニウム、ジルコニウム、タンタルからなる群より選択される、請求項3に記載の方法。
- CMOSデバイスであって、
NMOS領域(210)とPMOS領域(212)とを含む基板(202)と、
金属窒化物層(218)のセグメント(234)を含む、前記NMOS領域(210)の前記基板(202)上に位置するNMOSゲート電極スタック(230)と、
金属酸化物層(220)のセグメント(242)を含む、前記PMOS領域(212)の前記基板(202)上に位置するPMOSゲート誘電体スタック(240)とを含み、
前記金属窒化物層(218)の前記セグメント(234)は第1金属層(206)の第1部分から形成され、前記金属酸化物層(220)の前記セグメント(242)は前記第1金属層(206)の第2部分から形成される、CMOSデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/654,689 US6872613B1 (en) | 2003-09-04 | 2003-09-04 | Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure |
US10/654,689 | 2003-09-04 | ||
PCT/US2004/028486 WO2005048320A2 (en) | 2003-09-04 | 2004-08-31 | Method for integrating metals having different work functions to form cmos gates having a high-k gate dielectric and related structure |
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JP2007504671A true JP2007504671A (ja) | 2007-03-01 |
JP2007504671A5 JP2007504671A5 (ja) | 2007-11-08 |
JP4996251B2 JP4996251B2 (ja) | 2012-08-08 |
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JP2006525419A Active JP4996251B2 (ja) | 2003-09-04 | 2004-08-31 | high−kゲート誘電体と関連の構造を有するCMOSゲートを形成するための、異なる仕事関数を有する金属を統合する方法 |
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US (2) | US6872613B1 (ja) |
EP (1) | EP1661177B1 (ja) |
JP (1) | JP4996251B2 (ja) |
KR (1) | KR101110288B1 (ja) |
CN (1) | CN100573851C (ja) |
DE (1) | DE602004022835D1 (ja) |
TW (1) | TWI355739B (ja) |
WO (1) | WO2005048320A2 (ja) |
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JP2006261190A (ja) * | 2005-03-15 | 2006-09-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
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JP4996251B2 (ja) | 2012-08-08 |
CN1846305A (zh) | 2006-10-11 |
KR101110288B1 (ko) | 2012-02-15 |
EP1661177A2 (en) | 2006-05-31 |
US20050054149A1 (en) | 2005-03-10 |
WO2005048320A3 (en) | 2005-10-27 |
DE602004022835D1 (de) | 2009-10-08 |
EP1661177B1 (en) | 2009-08-26 |
TWI355739B (en) | 2012-01-01 |
US7176531B1 (en) | 2007-02-13 |
CN100573851C (zh) | 2009-12-23 |
TW200516770A (en) | 2005-05-16 |
KR20060055544A (ko) | 2006-05-23 |
US6872613B1 (en) | 2005-03-29 |
WO2005048320A2 (en) | 2005-05-26 |
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