JP2007335751A - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP2007335751A
JP2007335751A JP2006167785A JP2006167785A JP2007335751A JP 2007335751 A JP2007335751 A JP 2007335751A JP 2006167785 A JP2006167785 A JP 2006167785A JP 2006167785 A JP2006167785 A JP 2006167785A JP 2007335751 A JP2007335751 A JP 2007335751A
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JP
Japan
Prior art keywords
pixel region
barrier layer
region
optical black
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006167785A
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English (en)
Japanese (ja)
Other versions
JP2007335751A5 (OSRAM
Inventor
Naoko Umigami
尚子 海上
Kenichi Arakawa
賢一 荒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2006167785A priority Critical patent/JP2007335751A/ja
Priority to US11/763,129 priority patent/US7511324B2/en
Publication of JP2007335751A publication Critical patent/JP2007335751A/ja
Publication of JP2007335751A5 publication Critical patent/JP2007335751A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2006167785A 2006-06-16 2006-06-16 固体撮像装置 Pending JP2007335751A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006167785A JP2007335751A (ja) 2006-06-16 2006-06-16 固体撮像装置
US11/763,129 US7511324B2 (en) 2006-06-16 2007-06-14 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006167785A JP2007335751A (ja) 2006-06-16 2006-06-16 固体撮像装置

Publications (2)

Publication Number Publication Date
JP2007335751A true JP2007335751A (ja) 2007-12-27
JP2007335751A5 JP2007335751A5 (OSRAM) 2011-03-31

Family

ID=38860682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006167785A Pending JP2007335751A (ja) 2006-06-16 2006-06-16 固体撮像装置

Country Status (2)

Country Link
US (1) US7511324B2 (OSRAM)
JP (1) JP2007335751A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729678B2 (en) 2011-10-21 2014-05-20 Samsung Electronics Co., Ltd. Image sensor for stabilizing a black level
JP2022073873A (ja) * 2020-10-29 2022-05-17 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP2023158108A (ja) * 2020-10-29 2023-10-26 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5180537B2 (ja) * 2007-08-24 2013-04-10 キヤノン株式会社 光電変換装置及びマルチチップイメージセンサ
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
US8003425B2 (en) * 2008-05-14 2011-08-23 International Business Machines Corporation Methods for forming anti-reflection structures for CMOS image sensors
JP4743243B2 (ja) * 2008-09-08 2011-08-10 ソニー株式会社 撮像装置、黒レベルの調整方法およびプログラム
JP5438374B2 (ja) * 2009-05-12 2014-03-12 キヤノン株式会社 固体撮像装置
JP5091964B2 (ja) * 2010-03-05 2012-12-05 株式会社東芝 固体撮像装置
JP2013069958A (ja) * 2011-09-26 2013-04-18 Sony Corp 撮像素子、撮像装置、並びに、製造装置および方法
JP2019012739A (ja) * 2017-06-29 2019-01-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および撮像装置
CN109411495B (zh) * 2018-10-24 2020-10-16 上海华力微电子有限公司 一种优化势垒区像素离子注入改善串扰的方法
JP7520558B2 (ja) * 2020-04-07 2024-07-23 キヤノン株式会社 光電変換装置および機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002329854A (ja) * 2001-04-26 2002-11-15 Fujitsu Ltd 固体撮像装置
JP2004039794A (ja) * 2002-07-02 2004-02-05 Sharp Corp 固体撮像装置
JP2006019486A (ja) * 2004-07-01 2006-01-19 Nikon Corp 増幅型固体撮像素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4398301A (en) * 1980-09-11 1983-08-09 Fairchild Camera & Instrument Corporation Multiple preamplifiers with intervening overflow cell for charge coupled imaging devices
JP4781509B2 (ja) 2000-09-28 2011-09-28 ルネサスエレクトロニクス株式会社 Ｃｍｏｓイメージセンサ及びｃｍｏｓイメージセンサの製造方法
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
KR100508086B1 (ko) 2002-09-11 2005-08-17 삼성전자주식회사 씨모스 이미지 센서 및 그 제조방법
JP4383959B2 (ja) * 2003-05-28 2009-12-16 キヤノン株式会社 光電変換装置およびその製造方法
KR100659382B1 (ko) 2004-08-06 2006-12-19 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP4325557B2 (ja) * 2005-01-04 2009-09-02 ソニー株式会社 撮像装置および撮像方法
US7253461B2 (en) * 2005-05-27 2007-08-07 Dialog Imaging Systems Gmbh Snapshot CMOS image sensor with high shutter rejection ratio

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002329854A (ja) * 2001-04-26 2002-11-15 Fujitsu Ltd 固体撮像装置
JP2004039794A (ja) * 2002-07-02 2004-02-05 Sharp Corp 固体撮像装置
JP2006019486A (ja) * 2004-07-01 2006-01-19 Nikon Corp 増幅型固体撮像素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729678B2 (en) 2011-10-21 2014-05-20 Samsung Electronics Co., Ltd. Image sensor for stabilizing a black level
JP2022073873A (ja) * 2020-10-29 2022-05-17 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP2023158108A (ja) * 2020-10-29 2023-10-26 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Also Published As

Publication number Publication date
US7511324B2 (en) 2009-03-31
US20070290245A1 (en) 2007-12-20

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