JP2007317704A - 半導体製造装置 - Google Patents
半導体製造装置 Download PDFInfo
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- JP2007317704A JP2007317704A JP2006142626A JP2006142626A JP2007317704A JP 2007317704 A JP2007317704 A JP 2007317704A JP 2006142626 A JP2006142626 A JP 2006142626A JP 2006142626 A JP2006142626 A JP 2006142626A JP 2007317704 A JP2007317704 A JP 2007317704A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000011248 coating agent Substances 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 35
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 31
- 239000007800 oxidant agent Substances 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical group 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 42
- 230000015572 biosynthetic process Effects 0.000 abstract description 19
- 238000012423 maintenance Methods 0.000 abstract description 8
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 94
- 239000007789 gas Substances 0.000 description 45
- 238000000231 atomic layer deposition Methods 0.000 description 23
- 229910000449 hafnium oxide Inorganic materials 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 238000000034 method Methods 0.000 description 16
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 16
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 10
- 238000010926 purge Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- IJJMASPNDCLGHG-UHFFFAOYSA-N CC[Hf](CC)(CC)(CC)NC Chemical compound CC[Hf](CC)(CC)(CC)NC IJJMASPNDCLGHG-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000006200 vaporizer Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003113 dilution method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】 本発明のALD装置は、成膜用の供給ノズルとプリコート用の供給ノズルを別個に備える。成膜用の供給ノズルは半導体基板中心としてガスが供給される分散型とし、プリコート用の供給ノズルは反応室の下部にもガスが供給されやすいL字型とする。少ないサイクル数で反応室の下部にもパーティクルの発生を防止するに十分な特性を有するプリコート膜を形成できる。この構成とすることでパーティクルの少ない、稼動率の高い半導体製造装置が得られる。
【選択図】 図3
Description
107 分散型ノズル
108 L字型ノズル
1101 反応室
1102 反応管
1103 真空排気口
1104 反応室内圧力調整バルブ
1105 真空ポンプ
1106 ボートローダー
1107 半導体基板
1108 ボート
1109 ヒーター
1110 TEMAH供給源
1111 TEMAH流量調整器
1112 TEMAH気化器
1113 L字型ノズル(TEMAH、TMA、O3、N2)
1114 窒素供給源
1115 TEMAH用窒素流量調整器
1116 窒素流量調整
1117 分散型ノズル
1118 ノズル孔
Claims (11)
- 原子層レベルで順次成膜する半導体製造装置において、反応室内に原料ガスを導入する配管として、半導体基板上に成膜するためのノズルとは別に、反応室内をコーティングするためのノズルを、少なくとも1本以上有することを特徴とする半導体製造装置。
- 前記反応室には、複数枚の被処理半導体基板を、互いに離散させて厚さ方向に平行に並べることができることを特徴とする請求項1に記載の半導体製造装置。
- 前記反応室内をコーティングするためのノズルとして、酸化剤用ガス、金属原料用ガスの少なくとも一方のガスを導入するノズルを有することを特徴とする請求項1または2に記載の半導体製造装置。
- 前記半導体基板上に成膜するためのノズルとして、それぞれの被処理半導体基板に対して横方向から前記原料ガスを導入するように、複数の孔を有するノズルを少なくとも1本以上有することを特徴とする請求項1乃至3のいずれかに記載の半導体製造装置。
- 前記コーティングするためのノズルが、反応室内の被処理半導体基板を配置する部分よりも下方から前記原料ガスを導入することを特徴とする請求項1乃至3のいずれかに記載の半導体製造装置。
- 前記反応室内をコーティングするコーティング膜が、金属酸化物であることを特徴とする請求項1乃至3のいずれかに記載の半導体製造装置。
- 前記コーティング膜が、酸化アルミニウムであることを特徴とする請求項6に記載の半導体製造装置。
- 原子層レベルで順次成膜する半導体製造装置において、反応室内に酸化剤用ガスを導入する配管として、半導体基板上に成膜するための成膜用ノズルとは別に、反応室内をコーティングするためのコーティング用ノズルを有することを特徴とする半導体製造装置。
- 前記成膜用ノズルはそれぞれの被処理半導体基板に対して横方向から前記酸化剤用ガスを導入し、前記コーティング用ノズルは反応室内の被処理半導体基板が配置された位置の下方から前記酸化剤用ガスを導入することを特徴とする請求項8に記載の半導体製造装置。
- 前記成膜用ノズルはそれぞれの被処理半導体基板に対して横方向から前記酸化剤用ガスを導入し、前記コーティング用ノズルは被処理半導体基板を中心とし、反応室内の排気口の反対側から反応室内に前記酸化剤用ガスを導入することを特徴とする請求項8に記載の半導体製造装置。
- 前記酸化剤用ガスはオゾンであることを特徴とする請求項9または10に記載の半導体製造装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006142626A JP4866658B2 (ja) | 2006-05-23 | 2006-05-23 | 半導体製造装置 |
TW096117143A TWI419205B (zh) | 2006-05-23 | 2007-05-15 | Semiconductor manufacturing device |
US11/802,358 US20080066677A1 (en) | 2006-05-23 | 2007-05-22 | Semiconductor manufacturing system |
KR1020070049658A KR101118785B1 (ko) | 2006-05-23 | 2007-05-22 | 반도체 제조 장치 |
CN2007101048756A CN101078110B (zh) | 2006-05-23 | 2007-05-23 | 半导体制造装置 |
US12/766,319 US8277891B2 (en) | 2006-05-23 | 2010-04-23 | Method for suppressing particle generation during semiconductor manufacturing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006142626A JP4866658B2 (ja) | 2006-05-23 | 2006-05-23 | 半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007317704A true JP2007317704A (ja) | 2007-12-06 |
JP4866658B2 JP4866658B2 (ja) | 2012-02-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006142626A Active JP4866658B2 (ja) | 2006-05-23 | 2006-05-23 | 半導体製造装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20080066677A1 (ja) |
JP (1) | JP4866658B2 (ja) |
KR (1) | KR101118785B1 (ja) |
CN (1) | CN101078110B (ja) |
TW (1) | TWI419205B (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009224440A (ja) * | 2008-03-14 | 2009-10-01 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
US20100229795A1 (en) * | 2009-03-10 | 2010-09-16 | Hitach-Kokusai Electric Inc. | Substrate processing apparatus |
JP2011174170A (ja) * | 2010-01-29 | 2011-09-08 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
US9809880B2 (en) | 2014-03-17 | 2017-11-07 | Samsung Display Co. Ltd. | Atomic layer deposition apparatus |
KR20180118528A (ko) * | 2017-04-21 | 2018-10-31 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 처리 가스 노즐 내의 파티클 코팅 방법 및 기판 처리 방법 |
JP2019532842A (ja) * | 2017-01-31 | 2019-11-14 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 流体吐出デバイスの原子層堆積酸化物層 |
KR20210009154A (ko) * | 2019-07-16 | 2021-01-26 | 주식회사 유진테크 | 배치식 기판처리장치 및 그 운용방법 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102165097A (zh) * | 2008-09-24 | 2011-08-24 | 东芝三菱电机产业系统株式会社 | 氧化锌膜(ZnO)或氧化镁锌膜(ZnMgO)的成膜方法及氧化锌膜或氧化镁锌膜的成膜装置 |
KR20110007434A (ko) * | 2009-07-16 | 2011-01-24 | 주식회사 아이피에스 | 반도체 제조 장치 |
JP5977274B2 (ja) * | 2013-03-21 | 2016-08-24 | 東京エレクトロン株式会社 | バッチ式縦型基板処理装置および基板保持具 |
US9745658B2 (en) * | 2013-11-25 | 2017-08-29 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ALD films |
JP6035279B2 (ja) * | 2014-05-08 | 2016-11-30 | 東京エレクトロン株式会社 | 膜厚測定装置、膜厚測定方法、プログラム及びコンピュータ記憶媒体 |
CN106414799A (zh) * | 2014-06-12 | 2017-02-15 | 巴斯夫涂料有限公司 | 用于制造可挠性有机‑无机层合物的方法 |
JP2016134569A (ja) * | 2015-01-21 | 2016-07-25 | 株式会社東芝 | 半導体製造装置 |
US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
WO2019113351A1 (en) | 2017-12-07 | 2019-06-13 | Lam Research Corporation | Oxidation resistant protective layer in chamber conditioning |
US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
JP6994483B2 (ja) | 2018-09-26 | 2022-01-14 | 株式会社Kokusai Electric | 半導体装置の製造方法、プログラム、及び基板処理装置 |
TWI838931B (zh) * | 2022-10-28 | 2024-04-11 | 日商斯庫林集團股份有限公司 | 基板處理裝置 |
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JP2004282075A (ja) * | 2003-03-13 | 2004-10-07 | Ips Ltd | Ald薄膜蒸着方法 |
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JP2007067119A (ja) * | 2005-08-30 | 2007-03-15 | Elpida Memory Inc | 半導体製造装置 |
US7588667B2 (en) * | 2006-04-07 | 2009-09-15 | Tokyo Electron Limited | Depositing rhuthenium films using ionized physical vapor deposition (IPVD) |
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2006
- 2006-05-23 JP JP2006142626A patent/JP4866658B2/ja active Active
-
2007
- 2007-05-15 TW TW096117143A patent/TWI419205B/zh active
- 2007-05-22 KR KR1020070049658A patent/KR101118785B1/ko active IP Right Grant
- 2007-05-22 US US11/802,358 patent/US20080066677A1/en not_active Abandoned
- 2007-05-23 CN CN2007101048756A patent/CN101078110B/zh active Active
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2010
- 2010-04-23 US US12/766,319 patent/US8277891B2/en active Active
Patent Citations (4)
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JP2004282075A (ja) * | 2003-03-13 | 2004-10-07 | Ips Ltd | Ald薄膜蒸着方法 |
JP2005085794A (ja) * | 2003-09-04 | 2005-03-31 | Seiko Epson Corp | 薄膜生成方法及び半導体装置の製造方法 |
WO2005104207A1 (en) * | 2004-03-31 | 2005-11-03 | Tokyo Electron Limited | Method for extending time between chamber cleaning processes |
JP2006066557A (ja) * | 2004-08-25 | 2006-03-09 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Cited By (13)
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JP2011174170A (ja) * | 2010-01-29 | 2011-09-08 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
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JP2019532842A (ja) * | 2017-01-31 | 2019-11-14 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 流体吐出デバイスの原子層堆積酸化物層 |
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JP2018178236A (ja) * | 2017-04-21 | 2018-11-15 | 東京エレクトロン株式会社 | 基板処理装置、処理ガスノズル内のパーティクルコーティング方法及び基板処理方法 |
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JP2021017651A (ja) * | 2019-07-16 | 2021-02-15 | ユ−ジーン テクノロジー カンパニー.リミテッド | バッチ式基板処理装置及びその運用方法 |
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US11702737B2 (en) | 2019-07-16 | 2023-07-18 | Eugene Technology Co., Ltd. | Batch-type substrate processing apparatus and operation method thereof |
Also Published As
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US20100203741A1 (en) | 2010-08-12 |
JP4866658B2 (ja) | 2012-02-01 |
KR20070113146A (ko) | 2007-11-28 |
TW200805459A (en) | 2008-01-16 |
CN101078110B (zh) | 2011-07-20 |
US8277891B2 (en) | 2012-10-02 |
US20080066677A1 (en) | 2008-03-20 |
CN101078110A (zh) | 2007-11-28 |
TWI419205B (zh) | 2013-12-11 |
KR101118785B1 (ko) | 2012-03-20 |
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